DE68923638D1 - Korrekturverfahren für Maske. - Google Patents

Korrekturverfahren für Maske.

Info

Publication number: DE68923638D1
Authority: DE; Germany
Prior art keywords: mask; correction procedure; correction; procedure
Prior art date: 1988-03-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE68923638T

Other languages

English (en)

Other versions

DE68923638T2 (de

Inventor

Mitsuaki Amemiya

Shunichi Uzawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Canon Inc

Original Assignee

Canon Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-03-25

Filing date

1989-03-28

Publication date

1995-09-07

1988-03-25 Priority claimed from JP6975888A external-priority patent/JP2525221B2/ja

1988-03-25 Priority claimed from JP6975988A external-priority patent/JP2623109B2/ja

1989-03-28 Application filed by Canon Inc filed Critical Canon Inc

1995-09-07 Application granted granted Critical

1995-09-07 Publication of DE68923638D1 publication Critical patent/DE68923638D1/de

1996-01-18 Publication of DE68923638T2 publication Critical patent/DE68923638T2/de

2009-03-29 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/139—Defect coating

DE68923638T 1988-03-25 1989-03-28 Korrekturverfahren für Maske. Expired - Fee Related DE68923638T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP6975888A JP2525221B2 (ja)	1988-03-25	1988-03-25	マスク修正装置
JP6975988A JP2623109B2 (ja)	1988-03-25	1988-03-25	マスク修正方法

Publications (2)

Publication Number	Publication Date
DE68923638D1 true DE68923638D1 (de)	1995-09-07
DE68923638T2 DE68923638T2 (de)	1996-01-18

Family

ID=26410917

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE68923638T Expired - Fee Related DE68923638T2 (de)	1988-03-25	1989-03-28	Korrekturverfahren für Maske.

Country Status (3)

Country	Link
US (1)	US4906326A (de)
EP (1)	EP0334680B1 (de)
DE (1)	DE68923638T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5225771A (en) *	1988-05-16	1993-07-06	Dri Technology Corp.	Making and testing an integrated circuit using high density probe points
US5362591A (en) *	1989-10-09	1994-11-08	Hitachi Ltd. Et Al.	Mask having a phase shifter and method of manufacturing same
EP0440470B1 (de) *	1990-02-02	1996-12-18	Canon Kabushiki Kaisha	Belichtungsverfahren
US5024725A (en) *	1990-02-06	1991-06-18	International Business Machines Corp.	Method for self-inducted repair of circuit shorts and near-shorts
NL9000502A (nl) *	1990-03-05	1991-10-01	Philips Nv	Werkwijze voor het herstellen van een defect in een lithografisch masker.
JP2901201B2 (ja) *	1990-08-18	1999-06-07	三菱電機株式会社	フォトマスク
US5153083A (en) *	1990-12-05	1992-10-06	At&T Bell Laboratories	Method of making phase-shifting lithographic masks
US5266349A (en) *	1991-02-25	1993-11-30	Specialty Coating Systems Inc.	Method of discrete conformal coating
US5246799A (en) *	1991-09-20	1993-09-21	At&T Bell Laboratories	Method of removing excess material, for repairing phase-shifting lithographic masks
US5246801A (en) *	1991-09-20	1993-09-21	At&T Bell Laboratories	Method of repairing indentations in phase-shifting lithographic masks
US5304437A (en) *	1992-04-03	1994-04-19	At&T Bell Laboratories	Mask for x-ray pattern delineation
US5272024A (en) *	1992-04-08	1993-12-21	International Business Machines Corporation	Mask-structure and process to repair missing or unwanted phase-shifting elements
US5669971A (en) *	1994-04-06	1997-09-23	Specialty Coating Systems, Inc.	Selective coating apparatus
US5582939A (en) *	1995-07-10	1996-12-10	Micron Technology, Inc.	Method for fabricating and using defect-free phase shifting masks
US5830612A (en)	1996-01-24	1998-11-03	Fujitsu Limited	Method of detecting a deficiency in a charged-particle-beam exposure mask
US5920398A (en) *	1996-03-01	1999-07-06	Canon Kabushiki Kaisha	Surface position detecting method and scanning exposure method using the same
US6016357A (en) *	1997-06-16	2000-01-18	International Business Machines Corporation	Feedback method to repair phase shift masks
US6074571A (en)	1997-09-30	2000-06-13	International Business Machines Corporation	Cut and blast defect to avoid chrome roll over annealing
US5981110A (en) *	1998-02-17	1999-11-09	International Business Machines Corporation	Method for repairing photomasks
KR100548535B1 (ko)	1999-04-27	2006-02-02	주식회사 하이닉스반도체	반도체 소자의 위상 반전 마스크의 리페어 방법
US6415431B1 (en) *	2000-02-18	2002-07-02	International Business Machines Corporation	Repair of phase shift materials to enhance adhesion
US20030000921A1 (en) *	2001-06-29	2003-01-02	Ted Liang	Mask repair with electron beam-induced chemical etching
JP3626453B2 (ja) *	2001-12-27	2005-03-09	株式会社東芝	フォトマスクの修正方法及び修正装置
US20050103272A1 (en)	2002-02-25	2005-05-19	Leo Elektronenmikroskopie Gmbh	Material processing system and method
DE10230755A1 (de) *	2002-07-09	2004-01-22	Carl Zeiss Jena Gmbh	Anordnung zur Herstellung von Photomasken
DE10236027B3 (de) *	2002-08-06	2004-02-26	Texas Instruments Deutschland Gmbh	Verfahren zum Überprüfen einer Maske
US7303841B2 (en) *	2004-03-26	2007-12-04	Taiwan Semiconductor Manufacturing Company	Repair of photolithography masks by sub-wavelength artificial grating technology
JP2005286161A (ja) *	2004-03-30	2005-10-13	Ebara Corp	形状修復方法及び装置、並びにそれらを用いた半導体デバイス製造方法
DE102006043874B4 (de) *	2006-09-15	2020-07-09	Carl Zeiss Smt Gmbh	Verfahren und Vorrichtung zur Reparatur von Photolithographiemasken

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5423473A (en) *	1977-07-25	1979-02-22	Cho Lsi Gijutsu Kenkyu Kumiai	Photomask and method of inspecting mask pattern using same
US4200668A (en) *	1978-09-05	1980-04-29	Western Electric Company, Inc.	Method of repairing a defective photomask
JPS5568632A (en) *	1978-11-20	1980-05-23	Hitachi Ltd	Manufacture of photomask
JPS58173835A (ja) *	1982-04-06	1983-10-12	Fuji Xerox Co Ltd	レジストパタ−ンの欠陥修正方法
JPS62215957A (ja) *	1986-03-18	1987-09-22	Nippon Denso Co Ltd	ハ−ドマスクの製造方法
US4778693A (en) *	1986-10-17	1988-10-18	Quantronix Corporation	Photolithographic mask repair system

1989
- 1989-03-24 US US07/328,459 patent/US4906326A/en not_active Expired - Lifetime
- 1989-03-28 DE DE68923638T patent/DE68923638T2/de not_active Expired - Fee Related
- 1989-03-28 EP EP89303016A patent/EP0334680B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0334680A2 (de)	1989-09-27
EP0334680A3 (de)	1991-02-06
DE68923638T2 (de)	1996-01-18
EP0334680B1 (de)	1995-08-02
US4906326A (en)	1990-03-06

Legal Events

Date	Code	Title	Description
1996-08-29	8364	No opposition during term of opposition
2005-01-05	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE68923638T2 (de)	1996-01-18	Korrekturverfahren für Maske.
DE3763860D1 (de)	1990-08-30	Maske.
DE3762711D1 (de)	1990-06-21	Maske.
DE3775509D1 (de)	1992-02-06	Maske.
DE68924944T2 (de)	1996-08-08	Fehlerkorrekturschaltung.
DE68909128T2 (de)	1994-04-21	Maske.
DE3587072T2 (de)	1993-08-12	Softwaresicherungsverfahren.
FI830995L (fi)	1984-09-24	Laongnyppress foer pappersmaskin.
ATA144084A (de)	1998-05-15	Fehlerkorrekturverfahren
DE3886488T2 (de)	1994-06-09	Maske.
DE3772670D1 (de)	1991-10-10	Maske.
DE69132303T2 (de)	2000-12-21	Maske für Photolithographie
DE3580147D1 (de)	1990-11-22	Fehlerkorrektursystem.
DE3675438D1 (de)	1990-12-13	Maske.
DE3484455D1 (de)	1991-05-23	Fehlerkorrekturschaltung.
DE68922433D1 (de)	1995-06-08	Aporturkorrekturschaltung.
DE69114170T2 (de)	1996-05-30	Fehler-Korrektur für Farbfilter.
DE68924992D1 (de)	1996-01-18	Symmetrische Steuerungsanordnung für Multiverarbeitung.
DE3775511D1 (de)	1992-02-06	Maske.
NO871817D0 (no)	1987-04-30	Fremgangsmaate for xerotrykking.
DE3853204T2 (de)	1995-07-13	Träger für Röntgenmaske, Röntgenmaske und Röntgenbelichtungsverfahren mit dieser Maske.
DE3765851D1 (de)	1990-12-06	Maskenanordnung.
DE3866311D1 (de)	1992-01-02	Plattenfoermige maske.
DE3483217D1 (de)	1990-10-25	Maske fuer elektronenlithographie.
DE3851679D1 (de)	1994-11-03	Schaltung für Fehlererkennung und Fehlerkorrektur.