DE68928284D1 - Integrierte Halbleiterschaltung mit einem CMOS-Inverter - Google Patents

Integrierte Halbleiterschaltung mit einem CMOS-Inverter

Info

Publication number
DE68928284D1
DE68928284D1 DE68928284T DE68928284T DE68928284D1 DE 68928284 D1 DE68928284 D1 DE 68928284D1 DE 68928284 T DE68928284 T DE 68928284T DE 68928284 T DE68928284 T DE 68928284T DE 68928284 D1 DE68928284 D1 DE 68928284D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
cmos inverter
integrated semiconductor
integrated
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68928284T
Other languages
English (en)
Inventor
Taiji Ema
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68928284D1 publication Critical patent/DE68928284D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/362—Composites
    • H01M4/364—Composites as mixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/40—Alloys based on alkali metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/40—Alloys based on alkali metals
    • H01M4/405—Alloys based on lithium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
DE68928284T 1988-01-14 1989-01-11 Integrierte Halbleiterschaltung mit einem CMOS-Inverter Expired - Lifetime DE68928284D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63005954A JPH01186655A (ja) 1988-01-14 1988-01-14 半導体集積回路

Publications (1)

Publication Number Publication Date
DE68928284D1 true DE68928284D1 (de) 1997-10-09

Family

ID=11625287

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928284T Expired - Lifetime DE68928284D1 (de) 1988-01-14 1989-01-11 Integrierte Halbleiterschaltung mit einem CMOS-Inverter

Country Status (4)

Country Link
US (1) US5014104A (de)
EP (1) EP0324459B1 (de)
JP (1) JPH01186655A (de)
DE (1) DE68928284D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089095A (en) * 1990-03-30 1992-02-18 Olin Corporation Electrochemical process for producing chlorine dioxide from chloric acid
US5168072A (en) * 1990-10-12 1992-12-01 Texas Instruments Incorporated Method of fabricating an high-performance insulated-gate field-effect transistor
JP3125943B2 (ja) * 1991-09-17 2001-01-22 日本電信電話株式会社 半導体装置の製造方法
US5498908A (en) * 1991-11-22 1996-03-12 Matsushita Electric Industrial Co., Ltd. Semiconductor apparatus having an n-channel MOS transistor and a p-channel MOS transistor and method for manufacturing the semiconductor apparatus
JP2890380B2 (ja) 1991-11-27 1999-05-10 三菱電機株式会社 半導体装置およびその製造方法
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same
JP3224907B2 (ja) * 1993-06-08 2001-11-05 株式会社東芝 不揮発性半導体記憶装置
KR0140720B1 (ko) * 1995-03-29 1998-06-01 김주용 반도체 접속장치 및 그 제조방법
EP0818819A1 (de) * 1996-07-12 1998-01-14 Texas Instruments Incorporated Verbesserungen in, an oder in Bezug auf Halbleitervorrichtungen
JP3520396B2 (ja) 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
US5866445A (en) * 1997-07-11 1999-02-02 Texas Instruments Incorporated High density CMOS circuit with split gate oxide
US6040596A (en) * 1997-07-22 2000-03-21 Samsung Electronics Co., Ltd. Dynamic random access memory devices having improved peripheral circuit resistors therein
JP3580092B2 (ja) * 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
EP0940797B1 (de) 1997-08-21 2005-03-23 Seiko Epson Corporation Anzeigevorrichtung mit aktiver matrix
JP3160586B2 (ja) * 1999-04-27 2001-04-25 松下電子工業株式会社 Ｃｍｏｓインバータ及びそれを用いたスタンダードセル
CN1147935C (zh) * 2000-12-18 2004-04-28 黄敞 互补偶载场效应晶体管及其片上系统
KR20020050970A (ko) * 2000-12-22 2002-06-28 박종섭 반도체 소자 및 그 제조방법
JP4373065B2 (ja) * 2002-09-20 2009-11-25 株式会社日立製作所 半導体装置およびその製造方法
US7309922B2 (en) * 2003-10-20 2007-12-18 Samsun Electronics Co., Ltd. Lower substrate, display apparatus having the same and method of manufacturing the same
FR2884034A1 (fr) * 2005-04-01 2006-10-06 St Microelectronics Sa Dispositif de memoire sram avec remise a zero instantanee et procede correspondant de remise a zero instantanee

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132352A (en) * 1981-02-10 1982-08-16 Mitsubishi Electric Corp Complementary type metal oxide semiconductor integrated circuit device
JPS594053A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置の製造方法
JPS59197162A (ja) * 1983-04-22 1984-11-08 Nec Corp 半導体装置
JPS6097665A (ja) * 1983-11-01 1985-05-31 Fujitsu Ltd 半導体記憶装置
JPH063827B2 (ja) * 1983-11-21 1994-01-12 株式会社日立製作所 Ｃｍｏｓ演算回路
US4710897A (en) * 1984-04-27 1987-12-01 Kabushiki Kaisha Toshiba Semiconductor memory device comprising six-transistor memory cells
JPS60234360A (ja) * 1984-05-07 1985-11-21 Nec Corp 半導体記憶装置
JPS6136946A (ja) * 1984-07-30 1986-02-21 Nec Corp 半導体装置
JPH0652782B2 (ja) * 1984-08-31 1994-07-06 株式会社日立製作所 半導体集積回路装置
JPS6164166A (ja) * 1984-09-06 1986-04-02 Toshiba Corp 半導体装置
JPS61114569A (ja) * 1984-11-05 1986-06-02 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Ｃｍｏｓ半導体装置
JPS6215478A (ja) * 1985-07-12 1987-01-23 Furuno Electric Co Ltd 水中探知装置における超音波信号の送信装置
JPS6278872A (ja) * 1985-09-30 1987-04-11 Nec Corp 半導体集積回路装置
JPS62154784A (ja) * 1985-12-27 1987-07-09 Hitachi Ltd 半導体装置
JPH0779135B2 (ja) * 1986-02-18 1995-08-23 松下電器産業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0324459A2 (de) 1989-07-19
US5014104A (en) 1991-05-07
JPH01186655A (ja) 1989-07-26
EP0324459B1 (de) 1997-09-03
EP0324459A3 (de) 1992-05-20

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Legal Events

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