DE69006087T2 - Elektrisch gepumpter Laser mit senkrechtem Resonator. - Google Patents

Elektrisch gepumpter Laser mit senkrechtem Resonator.

Info

Publication number
DE69006087T2
DE69006087T2 DE69006087T DE69006087T DE69006087T2 DE 69006087 T2 DE69006087 T2 DE 69006087T2 DE 69006087 T DE69006087 T DE 69006087T DE 69006087 T DE69006087 T DE 69006087T DE 69006087 T2 DE69006087 T2 DE 69006087T2
Authority
DE
Germany
Prior art keywords
pumped laser
vertical resonator
electrically pumped
resonator
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69006087T
Other languages
English (en)
Other versions
DE69006087D1 (de
Inventor
Dennis G Deppe
Russell J Fischer
Kai-Feng Huang
Kuochou Tai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE69006087D1 publication Critical patent/DE69006087D1/de
Publication of DE69006087T2 publication Critical patent/DE69006087T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
DE69006087T 1989-04-26 1990-04-20 Elektrisch gepumpter Laser mit senkrechtem Resonator. Expired - Lifetime DE69006087T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/343,760 US4991179A (en) 1989-04-26 1989-04-26 Electrically pumped vertical cavity laser
SG44894A SG44894G (en) 1989-04-26 1994-03-26 Electrically pumped vertical cavity laser

Publications (2)

Publication Number Publication Date
DE69006087D1 DE69006087D1 (de) 1994-03-03
DE69006087T2 true DE69006087T2 (de) 1994-05-26

Family

ID=26663995

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69006087T Expired - Lifetime DE69006087T2 (de) 1989-04-26 1990-04-20 Elektrisch gepumpter Laser mit senkrechtem Resonator.

Country Status (8)

Country Link
US (1) US4991179A (de)
EP (1) EP0395315B1 (de)
JP (1) JPH07105572B2 (de)
KR (1) KR940001793B1 (de)
CA (1) CA2008899C (de)
DE (1) DE69006087T2 (de)
HK (1) HK108194A (de)
SG (1) SG44894G (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770792A2 (de) * 2005-09-29 2007-04-04 Osram Opto Semiconductors GmbH Strahlungsemittierender Halbleiterchip

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EP0483868B1 (de) * 1990-11-02 1997-01-22 Norikatsu Yamauchi Halbleitervorrichtung mit reflektierender Schicht
US5313324A (en) * 1991-03-27 1994-05-17 Massachusetts Institute Of Technology Solid state optical converter
JPH04333290A (ja) * 1991-05-08 1992-11-20 Nec Corp 垂直共振器型面発光レーザおよび垂直共振器型面入出力光電融合素子
US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
US5206872A (en) * 1991-11-01 1993-04-27 At&T Bell Laboratories Surface emitting laser
US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
FR2685098B1 (fr) * 1991-12-12 1995-02-10 Andre Schiltz Procede de montage et de couplage optique sur un substrat et substrat equipe d'une fibre optique.
US5408105A (en) * 1992-02-19 1995-04-18 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device with mesa
US5325386A (en) * 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
DE4240706A1 (de) * 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
JPH06347734A (ja) * 1993-06-11 1994-12-22 Nec Corp 面型光スイッチ
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
US5432809A (en) * 1994-06-15 1995-07-11 Motorola, Inc. VCSEL with Al-free cavity region
FR2724056B1 (fr) * 1994-08-23 1996-11-15 France Telecom Composant optique, optoelectronique ou photonique comportant au moins une cavite optique confinee lateralement et procede pour sa realisation
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6696308B1 (en) * 2000-10-27 2004-02-24 Chan-Long Shieh Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
US6671304B2 (en) 2001-08-28 2003-12-30 The United States Of America As Represented By The Secretary Of The Navy Amplitude-modulated laser for high-bandwidth communications systems
DE102004057802B4 (de) * 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
EP1974423A4 (de) * 2006-01-20 2010-06-09 Massachusetts Inst Technology Oberflächenemittierender faserlaser
KR101030659B1 (ko) * 2006-03-10 2011-04-20 파나소닉 전공 주식회사 발광 소자
US7772615B2 (en) * 2007-08-10 2010-08-10 Connector Optics Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon
JP6553019B2 (ja) * 2013-03-15 2019-07-31 プレビウム リサーチ インコーポレイテッド 広帯域可変掃引光源
JP6450743B2 (ja) 2013-03-15 2019-01-09 プレビウム リサーチ インコーポレイテッド 可変レーザアレイシステム
JP2017216348A (ja) * 2016-05-31 2017-12-07 三菱電機株式会社 端面出射型半導体レーザ
CN113675726A (zh) * 2021-10-21 2021-11-19 福建慧芯激光科技有限公司 一种高速垂直腔面发射激光器的外延结构

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US4163953A (en) * 1977-07-07 1979-08-07 Northern Telecom Limited Double heterostructure laser for direct coupling to an optical fiber
US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
JPS58180080A (ja) * 1982-04-15 1983-10-21 Mitsubishi Electric Corp 半導体レ−ザ装置
NL8602653A (nl) * 1986-10-23 1988-05-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770792A2 (de) * 2005-09-29 2007-04-04 Osram Opto Semiconductors GmbH Strahlungsemittierender Halbleiterchip
EP1770792A3 (de) * 2005-09-29 2011-05-25 OSRAM Opto Semiconductors GmbH Strahlungsemittierender Halbleiterchip

Also Published As

Publication number Publication date
JPH07105572B2 (ja) 1995-11-13
SG44894G (en) 1995-03-17
JPH02302085A (ja) 1990-12-14
EP0395315A3 (de) 1991-09-11
CA2008899A1 (en) 1990-10-26
KR940001793B1 (ko) 1994-03-05
US4991179A (en) 1991-02-05
CA2008899C (en) 1994-02-01
HK108194A (en) 1994-10-14
EP0395315A2 (de) 1990-10-31
EP0395315B1 (de) 1994-01-19
KR900017241A (ko) 1990-11-15
DE69006087D1 (de) 1994-03-03

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Legal Events

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