DE69030231D1 - Vorrichtung für Halbleiterlithographie - Google Patents

Vorrichtung für Halbleiterlithographie

Info

Publication number
DE69030231D1
DE69030231D1 DE69030231T DE69030231T DE69030231D1 DE 69030231 D1 DE69030231 D1 DE 69030231D1 DE 69030231 T DE69030231 T DE 69030231T DE 69030231 T DE69030231 T DE 69030231T DE 69030231 D1 DE69030231 D1 DE 69030231D1
Authority
DE
Germany
Prior art keywords
lithography device
semiconductor lithography
semiconductor
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030231T
Other languages
English (en)
Other versions
DE69030231T2 (de
Inventor
Tanya E Jewell
J Michael Rodgers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69030231D1 publication Critical patent/DE69030231D1/de
Application granted granted Critical
Publication of DE69030231T2 publication Critical patent/DE69030231T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
DE69030231T 1989-10-13 1990-10-05 Vorrichtung für Halbleiterlithographie Expired - Fee Related DE69030231T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42096789A 1989-10-13 1989-10-13
US07/528,532 US5063586A (en) 1989-10-13 1990-05-30 Apparatus for semiconductor lithography

Publications (2)

Publication Number Publication Date
DE69030231D1 true DE69030231D1 (de) 1997-04-24
DE69030231T2 DE69030231T2 (de) 1997-09-18

Family

ID=27025053

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030231T Expired - Fee Related DE69030231T2 (de) 1989-10-13 1990-10-05 Vorrichtung für Halbleiterlithographie

Country Status (4)

Country Link
US (1) US5063586A (de)
EP (1) EP0422853B1 (de)
JP (1) JPH03139822A (de)
DE (1) DE69030231T2 (de)

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US5361292A (en) * 1993-05-11 1994-11-01 The United States Of America As Represented By The Department Of Energy Condenser for illuminating a ring field
US5339346A (en) * 1993-05-20 1994-08-16 At&T Bell Laboratories Device fabrication entailing plasma-derived x-ray delineation
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IL113789A (en) * 1994-05-23 1999-01-26 Hughes Aircraft Co A non-focusing device with three hinged mirrors and a corrective mirror
JP3521506B2 (ja) * 1994-11-24 2004-04-19 株式会社ニコン 照明装置及び露光装置
JP3291974B2 (ja) 1995-04-24 2002-06-17 キヤノン株式会社 ズーム光学系及びそれを備える撮像装置
JP3291975B2 (ja) 1995-04-24 2002-06-17 キヤノン株式会社 ズーム光学系及びそれを用いた撮像装置
US6021004A (en) * 1995-02-28 2000-02-01 Canon Kabushiki Kaisha Reflecting type of zoom lens
US6166866A (en) * 1995-02-28 2000-12-26 Canon Kabushiki Kaisha Reflecting type optical system
EP0730180B1 (de) 1995-02-28 2002-09-04 Canon Kabushiki Kaisha Zoomobjektiv mit reflektierenden Flächen
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JP3666953B2 (ja) 1995-09-27 2005-06-29 キヤノン株式会社 光学素子
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JP3792799B2 (ja) 1996-08-27 2006-07-05 キヤノン株式会社 光学素子を有する光学系及びそれを用いた撮像装置
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US6426841B1 (en) 1997-08-27 2002-07-30 Canon Kabushiki Kaisha Optical apparatus
US5956192A (en) * 1997-09-18 1999-09-21 Svg Lithography Systems, Inc. Four mirror EUV projection optics
US6120156A (en) * 1997-10-16 2000-09-19 Canon Kabushiki Kaisha Optical element and optical system having the same
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JPH11231115A (ja) 1997-12-02 1999-08-27 Canon Inc 光学素子
US6226346B1 (en) * 1998-06-09 2001-05-01 The Regents Of The University Of California Reflective optical imaging systems with balanced distortion
US5973826A (en) * 1998-02-20 1999-10-26 Regents Of The University Of California Reflective optical imaging system with balanced distortion
US6014252A (en) 1998-02-20 2000-01-11 The Regents Of The University Of California Reflective optical imaging system
AU4180399A (en) * 1998-02-20 1999-09-06 Regents Of The University Of California, The Reflective optical imaging systems with balanced distortion
JPH11249019A (ja) 1998-02-26 1999-09-17 Canon Inc 光学素子及びそれを用いた光学系
JPH11249018A (ja) 1998-02-27 1999-09-17 Canon Inc 光学素子及びそれを用いた光学系
EP1079253A4 (de) * 1998-04-07 2004-09-01 Nikon Corp Vorrichtung und verfahren zur projektionsbelichtung, und optisches system mit reflektion und brechung
US6459472B1 (en) 1998-05-15 2002-10-01 Asml Netherlands B.V. Lithographic device
DE19923609A1 (de) * 1998-05-30 1999-12-02 Zeiss Carl Fa Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie
US6577443B2 (en) 1998-05-30 2003-06-10 Carl-Zeiss Stiftung Reduction objective for extreme ultraviolet lithography
US6072852A (en) * 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
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JP2000137166A (ja) 1998-10-30 2000-05-16 Canon Inc 光学系
US6331710B1 (en) 1998-12-02 2001-12-18 Zhijiang Wang Reflective optical systems for EUV lithography
US6147818A (en) * 1998-12-21 2000-11-14 The Regents Of The University Of California Projection optics box
USRE42118E1 (en) 1999-02-15 2011-02-08 Carl-Zeiss-Smt Ag Projection system for EUV lithography
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
US7151592B2 (en) * 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
DE19910724A1 (de) 1999-03-11 2000-09-14 Zeiss Carl Fa Mikrolithographie-Projektionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
US6188513B1 (en) 1999-03-15 2001-02-13 Russell Hudyma High numerical aperture ring field projection system for extreme ultraviolet lithography
US6033079A (en) * 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
JP3292174B2 (ja) 1999-05-11 2002-06-17 キヤノン株式会社 光学系及びそれを用いた撮像装置
JP3292173B2 (ja) 1999-05-11 2002-06-17 キヤノン株式会社 光学素子及びそれを備える撮像装置
JP4212721B2 (ja) * 1999-06-10 2009-01-21 三菱電機株式会社 広角反射光学系
JP2001110709A (ja) 1999-10-08 2001-04-20 Nikon Corp 多層膜反射鏡及び露光装置ならびに集積回路の製造方法。
EP1093021A3 (de) 1999-10-15 2004-06-30 Nikon Corporation Projektionsbelichtungssystem sowie ein solches System benutzendes Gerät und Verfahren
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FR2806527B1 (fr) 2000-03-20 2002-10-25 Schlumberger Technologies Inc Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique
JP2004514943A (ja) * 2000-11-28 2004-05-20 カール・ツアイス・エスエムテイ・アーゲー １５７ｎｍリソグラフィ用の反射屈折投影系
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JP2003241049A (ja) * 2002-02-22 2003-08-27 Nikon Corp 光学素子保持方法、光学素子研磨加工方法及び光学素子成膜方法
DE50313254D1 (de) * 2002-05-10 2010-12-23 Zeiss Carl Smt Ag Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion
JP2004004256A (ja) * 2002-05-31 2004-01-08 Sony Corp 光走査装置及び２次元画像形成装置
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US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
US20080151365A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR101407204B1 (ko) * 2004-01-14 2014-06-13 칼 짜이스 에스엠티 게엠베하 투영 대물렌즈
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
KR20170028451A (ko) 2004-05-17 2017-03-13 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
KR100674959B1 (ko) * 2005-02-23 2007-01-26 삼성전자주식회사 비축상 프로젝션 광학계 및 이를 적용한 극자외선 리소그래피 장치
KR100962911B1 (ko) * 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
DE102006014380A1 (de) 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
WO2007115597A1 (en) * 2006-04-07 2007-10-18 Carl Zeiss Smt Ag Microlithography projection optical system, tool and method of production
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JP4935886B2 (ja) * 2009-12-10 2012-05-23 三菱電機株式会社 画像読取装置
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Also Published As

Publication number Publication date
US5063586A (en) 1991-11-05
EP0422853A2 (de) 1991-04-17
EP0422853A3 (en) 1991-12-18
JPH03139822A (ja) 1991-06-14
DE69030231T2 (de) 1997-09-18
EP0422853B1 (de) 1997-03-19
JPH0568089B2 (de) 1993-09-28

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8339 Ceased/non-payment of the annual fee