DE69105037D1 - Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln. - Google Patents

Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln.

Info

Publication number
DE69105037D1
DE69105037D1 DE69105037T DE69105037T DE69105037D1 DE 69105037 D1 DE69105037 D1 DE 69105037D1 DE 69105037 T DE69105037 T DE 69105037T DE 69105037 T DE69105037 T DE 69105037T DE 69105037 D1 DE69105037 D1 DE 69105037D1
Authority
DE
Germany
Prior art keywords
surface emitting
emitting lasers
vertical resonator
conductive mirrors
mirrors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69105037T
Other languages
English (en)
Other versions
DE69105037T2 (de
Inventor
Dennis Glenn Deppe
Leonard Cecil Feldman
Rose Fasano Kopf
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69105037D1 publication Critical patent/DE69105037D1/de
Publication of DE69105037T2 publication Critical patent/DE69105037T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
DE69105037T 1990-05-21 1991-05-10 Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln. Expired - Fee Related DE69105037T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/526,204 US5068868A (en) 1990-05-21 1990-05-21 Vertical cavity surface emitting lasers with electrically conducting mirrors

Publications (2)

Publication Number Publication Date
DE69105037D1 true DE69105037D1 (de) 1994-12-15
DE69105037T2 DE69105037T2 (de) 1995-03-23

Family

ID=24096368

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69105037T Expired - Fee Related DE69105037T2 (de) 1990-05-21 1991-05-10 Oberflächenemittierende Laser mit vertikalem Resonator und leitenden Spiegeln.

Country Status (9)

Country Link
US (1) US5068868A (de)
EP (1) EP0458493B1 (de)
JP (1) JP2598179B2 (de)
KR (1) KR0142585B1 (de)
CA (1) CA2039068C (de)
DE (1) DE69105037T2 (de)
HK (1) HK137195A (de)
SG (1) SG31195G (de)
TW (1) TW198147B (de)

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US5356832A (en) * 1990-09-12 1994-10-18 Seiko Epson Corporation Method of making surface emission type semiconductor laser
US5537666A (en) * 1990-09-12 1996-07-16 Seiko Epson Coropration Surface emission type semiconductor laser
US5404369A (en) * 1990-09-12 1995-04-04 Seiko Epson Corporation Surface emission type semiconductor laser
US5317584A (en) * 1990-09-12 1994-05-31 Seiko Epson Corporation Surface emission type semiconductor laser
US5436922A (en) * 1990-09-12 1995-07-25 Seiko Epson Corporation Surface emission type semiconductor laser
US5295148A (en) * 1990-09-12 1994-03-15 Seiko Epson Corporation Surface emission type semiconductor laser
JPH04132274A (ja) * 1990-09-21 1992-05-06 Eastman Kodak Japan Kk 発光ダイオード
US5260589A (en) * 1990-11-02 1993-11-09 Norikatsu Yamauchi Semiconductor device having reflecting layers made of varying unit semiconductors
US5062115A (en) * 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
JPH04252083A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体発光素子
JP2710171B2 (ja) * 1991-02-28 1998-02-10 日本電気株式会社 面入出力光電融合素子
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5206871A (en) * 1991-12-27 1993-04-27 At&T Bell Laboratories Optical devices with electron-beam evaporated multilayer mirror
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
US5463275A (en) * 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
DE4240706A1 (de) * 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
US5386126A (en) * 1993-01-29 1995-01-31 Henderson; Gregory H. Semiconductor devices based on optical transitions between quasibound energy levels
JP3362356B2 (ja) * 1993-03-23 2003-01-07 富士通株式会社 光半導体装置
US5408110A (en) * 1993-06-28 1995-04-18 National Research Council Of Canada Second-harmonic generation in semiconductor heterostructures
JPH0794781A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 面発光型半導体発光ダイオード
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device
JP3783411B2 (ja) * 1997-08-15 2006-06-07 富士ゼロックス株式会社 表面発光型半導体レーザ
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6174749B1 (en) 1998-05-13 2001-01-16 The Regents Of The University Of California Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays
US6347107B1 (en) 1998-07-15 2002-02-12 Eastman Kodak Company System and method of improving intensity control of laser diodes using back facet photodiode
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6852968B1 (en) * 1999-03-08 2005-02-08 Canon Kabushiki Kaisha Surface-type optical apparatus
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
DE10002521A1 (de) 2000-01-21 2001-08-09 Infineon Technologies Ag Elektrooptisches Datenübertragungsmodul
US6526278B1 (en) * 2000-03-03 2003-02-25 Motorola, Inc. Mobile satellite communication system utilizing polarization diversity combining
JP4592873B2 (ja) * 2000-05-24 2010-12-08 古河電気工業株式会社 面発光半導体レーザ素子
JP2002083999A (ja) * 2000-06-21 2002-03-22 Sharp Corp 半導体発光素子
DE10040448A1 (de) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
DE10048443B4 (de) * 2000-09-29 2007-09-06 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiter-Laser (VCSEL) mit erhöhter Strahlungsausbeute
AU2002231019A1 (en) 2000-12-15 2002-06-24 Stanford University Laser diode with nitrogen incorporating barrier
US6663785B1 (en) 2001-08-31 2003-12-16 Nlight Photonics Corporation Broad spectrum emitter array and methods for fabrication thereof
EP1298461A1 (de) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Halbleiter Verteilten Bragg-Reflektor mit GaP und Halbleiterbauelement mit einem Resonanzhohlraum und einer solchen VBR
DE10208171A1 (de) * 2002-02-26 2003-09-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
DE10244447B4 (de) * 2002-09-24 2006-06-14 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
US6969874B1 (en) 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
JP2005123416A (ja) * 2003-10-17 2005-05-12 Ricoh Co Ltd 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび光伝送システム
US7693197B2 (en) * 2003-10-31 2010-04-06 Hewlett-Packard Development Company, L.P. Laser scanning apparatuses, laser scanning methods and article manufacture
KR100527108B1 (ko) * 2003-11-28 2005-11-09 한국전자통신연구원 반도체 광소자의 제작 방법
WO2006036434A2 (en) * 2004-08-30 2006-04-06 Ahura Corporation Free-space coupling between laser, optical probe head, and spectrometer assemblies and other optical elements
US7241437B2 (en) * 2004-12-30 2007-07-10 3M Innovative Properties Company Zirconia particles
JP2006261219A (ja) * 2005-03-15 2006-09-28 Hitachi Cable Ltd 半導体発光素子
US7369595B2 (en) 2005-12-06 2008-05-06 Electronics And Telecommunications Research Institute Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode
KR100794667B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
JP5205729B2 (ja) * 2006-09-28 2013-06-05 富士通株式会社 半導体レーザ装置及びその製造方法
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US20090007950A1 (en) * 2007-07-05 2009-01-08 Eliade Stefanescu Longitudinal quantum heat converter
DE102012208730A1 (de) * 2012-05-24 2013-11-28 Osram Opto Semiconductors Gmbh Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
TW201603315A (zh) * 2014-07-14 2016-01-16 晶元光電股份有限公司 發光元件
US9735545B1 (en) 2016-07-08 2017-08-15 Northrop Grumman Systems Corporation Vertical cavity surface emitting laser with composite reflectors
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Also Published As

Publication number Publication date
KR910020979A (ko) 1991-12-20
SG31195G (en) 1995-08-18
CA2039068A1 (en) 1991-11-22
TW198147B (de) 1993-01-11
JP2598179B2 (ja) 1997-04-09
DE69105037T2 (de) 1995-03-23
CA2039068C (en) 1994-02-08
EP0458493A2 (de) 1991-11-27
US5068868A (en) 1991-11-26
EP0458493A3 (en) 1992-03-25
HK137195A (en) 1995-09-08
KR0142585B1 (ko) 1998-08-17
EP0458493B1 (de) 1994-11-09
JPH04229688A (ja) 1992-08-19

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee