DE69111587D1 - Verfahren zur CVD von Kupfer. - Google Patents
Verfahren zur CVD von Kupfer.Info
- Publication number
- DE69111587D1 DE69111587D1 DE69111587T DE69111587T DE69111587D1 DE 69111587 D1 DE69111587 D1 DE 69111587D1 DE 69111587 T DE69111587 T DE 69111587T DE 69111587 T DE69111587 T DE 69111587T DE 69111587 D1 DE69111587 D1 DE 69111587D1
- Authority
- DE
- Germany
- Prior art keywords
- cvd
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic System without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/636,316 US5098516A (en) | 1990-12-31 | 1990-12-31 | Processes for the chemical vapor deposition of copper and etching of copper |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69111587D1 true DE69111587D1 (de) | 1995-08-31 |
DE69111587T2 DE69111587T2 (de) | 1996-01-11 |
Family
ID=24551364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69111587T Expired - Fee Related DE69111587T2 (de) | 1990-12-31 | 1991-12-20 | Verfahren zur CVD von Kupfer. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5098516A (de) |
EP (1) | EP0493754B1 (de) |
JP (2) | JPH0649942B2 (de) |
KR (1) | KR940005327B1 (de) |
CA (1) | CA2058483C (de) |
DE (1) | DE69111587T2 (de) |
IE (1) | IE73257B1 (de) |
Families Citing this family (84)
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KR940002439B1 (ko) * | 1990-03-09 | 1994-03-24 | 니뽄 덴신 덴와 가부시끼가이샤 | 금속 박막 성장방법 및 장치 |
US5273775A (en) * | 1990-09-12 | 1993-12-28 | Air Products And Chemicals, Inc. | Process for selectively depositing copper aluminum alloy onto a substrate |
KR950700679A (ko) * | 1992-06-01 | 1995-01-16 | 해롤드 더블유, 아 담스 | 초경량 전자기 간섭 차폐물질 및 제조방법(ultralight electro magnetic interference shielding and method for making same) |
US5264248A (en) * | 1992-08-03 | 1993-11-23 | General Electric Company | Adhesion of metal coatings of polypyromellitimides |
US5387315A (en) * | 1992-10-27 | 1995-02-07 | Micron Technology, Inc. | Process for deposition and etching of copper in multi-layer structures |
US5358743A (en) * | 1992-11-24 | 1994-10-25 | University Of New Mexico | Selective and blanket chemical vapor deposition of Cu from (β-diketonate)Cu(L)n by silica surface modification |
US5368687A (en) * | 1993-03-15 | 1994-11-29 | Micron Technology, Inc. | Semiconductor processing method of etching insulating inorganic metal oxide materials and method of cleaning metals from the surface of semiconductor wafers |
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US5412129A (en) * | 1994-06-17 | 1995-05-02 | Dicarolis; Stephen A. | Stabilization of precursors for thin film deposition |
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KR0179797B1 (ko) * | 1995-12-29 | 1999-04-15 | 문정환 | 바이어스 전압이 인가된 Cu 박막 형성방법 |
DE19637194C2 (de) * | 1996-09-12 | 2003-10-02 | Mattson Thermal Products Gmbh | Gasgemisch und Verfahren zum Trockenätzen von Metallen, insbesondere Kupfer, bei niedrigen Temperaturen |
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FR2760743B1 (fr) | 1997-03-13 | 1999-07-23 | Centre Nat Rech Scient | Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique |
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KR100296959B1 (ko) * | 1998-01-19 | 2001-09-22 | 정명식 | 구리의 화학 증착에 유용한 유기 구리 전구체 |
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US4321073A (en) * | 1980-10-15 | 1982-03-23 | Hughes Aircraft Company | Method and apparatus for forming metal coating on glass fiber |
CA1178290A (en) * | 1981-07-13 | 1984-11-20 | Gerald Doyle | Copper or silver complexes with fluorinated diketonates and unsaturated hydrocarbons |
US4425281A (en) * | 1981-07-13 | 1984-01-10 | Exxon Research And Engineering Co. | Copper or silver complexes with fluorinated diketones and unsaturated ligands |
US4622095A (en) * | 1985-10-18 | 1986-11-11 | Ibm Corporation | Laser stimulated halogen gas etching of metal substrates |
US4948623A (en) * | 1987-06-30 | 1990-08-14 | International Business Machines Corporation | Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex |
JP2811004B2 (ja) * | 1988-05-23 | 1998-10-15 | 日本電信電話株式会社 | 金属薄膜成長方法および装置 |
US4904340A (en) * | 1988-10-31 | 1990-02-27 | Microelectronics And Computer Technology Corporation | Laser-assisted liquid-phase etching of copper conductors |
-
1990
- 1990-12-31 US US07/636,316 patent/US5098516A/en not_active Expired - Lifetime
-
1991
- 1991-12-20 EP EP91121887A patent/EP0493754B1/de not_active Expired - Lifetime
- 1991-12-20 DE DE69111587T patent/DE69111587T2/de not_active Expired - Fee Related
- 1991-12-25 JP JP3357099A patent/JPH0649942B2/ja not_active Expired - Fee Related
- 1991-12-27 CA CA002058483A patent/CA2058483C/en not_active Expired - Fee Related
- 1991-12-30 IE IE456591A patent/IE73257B1/en not_active IP Right Cessation
- 1991-12-30 KR KR1019910025166A patent/KR940005327B1/ko not_active IP Right Cessation
-
1998
- 1998-03-09 JP JP05718298A patent/JP3262271B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0493754B1 (de) | 1995-07-26 |
JPH0649942B2 (ja) | 1994-06-29 |
CA2058483C (en) | 1999-01-05 |
IE914565A1 (en) | 1992-07-01 |
EP0493754A1 (de) | 1992-07-08 |
CA2058483A1 (en) | 1992-07-01 |
US5098516A (en) | 1992-03-24 |
KR920012515A (ko) | 1992-07-27 |
DE69111587T2 (de) | 1996-01-11 |
JP3262271B2 (ja) | 2002-03-04 |
JPH10245678A (ja) | 1998-09-14 |
KR940005327B1 (ko) | 1994-06-16 |
JPH04318170A (ja) | 1992-11-09 |
IE73257B1 (en) | 1997-05-21 |
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