DE69115172T2 - Verfahren zum Herstellen eines kapazitiven isolierenden Films. - Google Patents
Verfahren zum Herstellen eines kapazitiven isolierenden Films.Info
- Publication number
- DE69115172T2 DE69115172T2 DE69115172T DE69115172T DE69115172T2 DE 69115172 T2 DE69115172 T2 DE 69115172T2 DE 69115172 T DE69115172 T DE 69115172T DE 69115172 T DE69115172 T DE 69115172T DE 69115172 T2 DE69115172 T2 DE 69115172T2
- Authority
- DE
- Germany
- Prior art keywords
- making
- insulating film
- capacitive insulating
- capacitive
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2231661A JP2605465B2 (ja) | 1990-08-31 | 1990-08-31 | 容量絶縁膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69115172D1 DE69115172D1 (de) | 1996-01-18 |
DE69115172T2 true DE69115172T2 (de) | 1996-07-04 |
Family
ID=16927002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69115172T Expired - Fee Related DE69115172T2 (de) | 1990-08-31 | 1991-08-30 | Verfahren zum Herstellen eines kapazitiven isolierenden Films. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5254505A (de) |
EP (1) | EP0474140B1 (de) |
JP (1) | JP2605465B2 (de) |
DE (1) | DE69115172T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04253328A (ja) * | 1991-01-29 | 1992-09-09 | Hitachi Ltd | 表面処理装置 |
JPH07161931A (ja) * | 1993-12-02 | 1995-06-23 | Nec Corp | 半導体装置の製造方法 |
US5563105A (en) * | 1994-09-30 | 1996-10-08 | International Business Machines Corporation | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
KR0183732B1 (ko) * | 1995-09-01 | 1999-03-20 | 김광호 | 반도체 장치의 캐패시터 제작방법 |
KR0165484B1 (ko) | 1995-11-28 | 1999-02-01 | 김광호 | 탄탈륨산화막 증착 형성방법 및 그 장치 |
US6555394B2 (en) | 1995-11-28 | 2003-04-29 | Samsung Electronics Co., Ltd. | Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure |
KR100282413B1 (ko) * | 1996-10-24 | 2001-03-02 | 김영환 | 아산화질소 가스를 이용한 박막 형성 방법 |
JPH11288893A (ja) | 1998-04-03 | 1999-10-19 | Nec Corp | 半導体製造装置及び半導体装置の製造方法 |
JP3670524B2 (ja) * | 1998-09-11 | 2005-07-13 | 株式会社日立国際電気 | 半導体装置の製造方法 |
JP3189813B2 (ja) * | 1998-11-30 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
US6943392B2 (en) * | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
US6444478B1 (en) | 1999-08-31 | 2002-09-03 | Micron Technology, Inc. | Dielectric films and methods of forming same |
US6335049B1 (en) * | 2000-01-03 | 2002-01-01 | Micron Technology, Inc. | Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor |
JP3516918B2 (ja) | 2000-01-19 | 2004-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法及び半導体製造装置 |
US6558517B2 (en) | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
JP4286439B2 (ja) * | 2000-08-11 | 2009-07-01 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6943078B1 (en) * | 2000-08-31 | 2005-09-13 | Micron Technology, Inc. | Method and structure for reducing leakage current in capacitors |
US6566147B2 (en) | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
US20030017266A1 (en) | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US6838122B2 (en) | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US7011978B2 (en) * | 2001-08-17 | 2006-03-14 | Micron Technology, Inc. | Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions |
US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US7604841B2 (en) * | 2004-03-31 | 2009-10-20 | Tokyo Electron Limited | Method for extending time between chamber cleaning processes |
US20060013942A1 (en) * | 2004-07-16 | 2006-01-19 | Muffoletto Barry C | Method for improving electrical conductivity of metals, metal alloys and metal oxides by ion beam implantation |
GB0426265D0 (en) * | 2004-11-30 | 2004-12-29 | Trigen Ltd | Compounds |
JP2006339371A (ja) * | 2005-06-01 | 2006-12-14 | Toshiba Corp | 半導体装置の製造方法 |
US7425510B2 (en) * | 2006-08-17 | 2008-09-16 | Samsung Electronics Co., Ltd. | Methods of cleaning processing chamber in semiconductor device fabrication equipment |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6028259A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体装置用キヤパシタの製造方法 |
JPH01189129A (ja) * | 1988-01-25 | 1989-07-28 | Sharp Corp | 薄膜の形成方法 |
JPH0641631B2 (ja) * | 1989-03-22 | 1994-06-01 | 日本電気株式会社 | 酸化タンタル膜の化学気相成長法および化学気相成長装置 |
-
1990
- 1990-08-31 JP JP2231661A patent/JP2605465B2/ja not_active Expired - Lifetime
-
1991
- 1991-08-30 EP EP91114673A patent/EP0474140B1/de not_active Expired - Lifetime
- 1991-08-30 DE DE69115172T patent/DE69115172T2/de not_active Expired - Fee Related
- 1991-09-03 US US07/753,765 patent/US5254505A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0474140B1 (de) | 1995-12-06 |
JP2605465B2 (ja) | 1997-04-30 |
JPH04112531A (ja) | 1992-04-14 |
DE69115172D1 (de) | 1996-01-18 |
EP0474140A1 (de) | 1992-03-11 |
US5254505A (en) | 1993-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |