DE69117021D1 - Herstellung von Titannitrid aus metallorganischen Ausgangsverbindungen - Google Patents

Herstellung von Titannitrid aus metallorganischen Ausgangsverbindungen

Info

Publication number
DE69117021D1
DE69117021D1 DE69117021T DE69117021T DE69117021D1 DE 69117021 D1 DE69117021 D1 DE 69117021D1 DE 69117021 T DE69117021 T DE 69117021T DE 69117021 T DE69117021 T DE 69117021T DE 69117021 D1 DE69117021 D1 DE 69117021D1
Authority
DE
Germany
Prior art keywords
production
titanium nitride
starting compounds
organometallic starting
organometallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69117021T
Other languages
English (en)
Other versions
DE69117021T2 (de
Inventor
Chaitanya K Narula
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ford Werke GmbH
Original Assignee
Ford Werke GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ford Werke GmbH filed Critical Ford Werke GmbH
Publication of DE69117021D1 publication Critical patent/DE69117021D1/de
Application granted granted Critical
Publication of DE69117021T2 publication Critical patent/DE69117021T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/87Ceramics
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0763Preparation from titanium, zirconium or hafnium halides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5062Borides, Nitrides or Silicides
    • C04B41/5068Titanium nitride
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values
DE69117021T 1990-12-10 1991-12-09 Herstellung von Titannitrid aus metallorganischen Ausgangsverbindungen Expired - Fee Related DE69117021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/625,180 US5087593A (en) 1990-12-10 1990-12-10 Preparation of titanium nitride from organometallic precursors

Publications (2)

Publication Number Publication Date
DE69117021D1 true DE69117021D1 (de) 1996-03-21
DE69117021T2 DE69117021T2 (de) 1996-06-05

Family

ID=24504927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117021T Expired - Fee Related DE69117021T2 (de) 1990-12-10 1991-12-09 Herstellung von Titannitrid aus metallorganischen Ausgangsverbindungen

Country Status (5)

Country Link
US (1) US5087593A (de)
EP (1) EP0490614B1 (de)
JP (1) JP2978306B2 (de)
CA (1) CA2052967A1 (de)
DE (1) DE69117021T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5571572A (en) * 1991-09-05 1996-11-05 Micron Technology, Inc. Method of depositing titanium carbonitride films on semiconductor wafers
EP0546670B2 (de) * 1991-12-13 2000-11-08 Ford Motor Company Limited Metallnitridfilm
US6081034A (en) 1992-06-12 2000-06-27 Micron Technology, Inc. Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
US5350719A (en) * 1992-11-06 1994-09-27 Ford Motor Company Preparation of titanium nitride-containing refractory material composites
FR2708924B1 (fr) * 1993-08-12 1995-10-20 Saint Gobain Vitrage Int Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent.
US5856236A (en) 1996-06-14 1999-01-05 Micron Technology, Inc. Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer
US7858518B2 (en) 1998-04-07 2010-12-28 Micron Technology, Inc. Method for forming a selective contact and local interconnect in situ
DE19904378B4 (de) * 1999-02-03 2006-10-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Nitrid-Einkristallen
US6967159B2 (en) * 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US6995081B2 (en) * 2002-08-28 2006-02-07 Micron Technology, Inc. Systems and methods for forming tantalum silicide layers
US6794284B2 (en) * 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US7521356B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
US7799679B2 (en) * 2008-06-24 2010-09-21 Intel Corporation Liquid phase molecular self-assembly for barrier deposition and structures formed thereby
US9231206B2 (en) * 2013-09-13 2016-01-05 Micron Technology, Inc. Methods of forming a ferroelectric memory cell
CN104928656A (zh) * 2015-07-01 2015-09-23 西北工业大学 氮化钛薄膜的制备方法
CN110775949A (zh) * 2019-12-06 2020-02-11 济南大学 一种氮化钛纳米材料的制备方法及其应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482689A (en) * 1984-03-12 1984-11-13 Dow Corning Corporation Process for the preparation of polymetallo(disily)silazane polymers and the polymers therefrom
JPH0662776B2 (ja) * 1989-08-24 1994-08-17 信越化学工業株式会社 ポリチタノカルボシラザン重合体及び該重合体を用いたセラミックスの製造方法

Also Published As

Publication number Publication date
EP0490614A1 (de) 1992-06-17
JPH04265209A (ja) 1992-09-21
EP0490614B1 (de) 1996-02-07
CA2052967A1 (en) 1992-06-11
JP2978306B2 (ja) 1999-11-15
US5087593A (en) 1992-02-11
DE69117021T2 (de) 1996-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee