DE69117021D1 - Herstellung von Titannitrid aus metallorganischen Ausgangsverbindungen - Google Patents
Herstellung von Titannitrid aus metallorganischen AusgangsverbindungenInfo
- Publication number
- DE69117021D1 DE69117021D1 DE69117021T DE69117021T DE69117021D1 DE 69117021 D1 DE69117021 D1 DE 69117021D1 DE 69117021 T DE69117021 T DE 69117021T DE 69117021 T DE69117021 T DE 69117021T DE 69117021 D1 DE69117021 D1 DE 69117021D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- titanium nitride
- starting compounds
- organometallic starting
- organometallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
- C01B21/0763—Preparation from titanium, zirconium or hafnium halides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5068—Titanium nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/625,180 US5087593A (en) | 1990-12-10 | 1990-12-10 | Preparation of titanium nitride from organometallic precursors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69117021D1 true DE69117021D1 (de) | 1996-03-21 |
DE69117021T2 DE69117021T2 (de) | 1996-06-05 |
Family
ID=24504927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69117021T Expired - Fee Related DE69117021T2 (de) | 1990-12-10 | 1991-12-09 | Herstellung von Titannitrid aus metallorganischen Ausgangsverbindungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5087593A (de) |
EP (1) | EP0490614B1 (de) |
JP (1) | JP2978306B2 (de) |
CA (1) | CA2052967A1 (de) |
DE (1) | DE69117021T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192589A (en) * | 1991-09-05 | 1993-03-09 | Micron Technology, Inc. | Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity |
US5571572A (en) * | 1991-09-05 | 1996-11-05 | Micron Technology, Inc. | Method of depositing titanium carbonitride films on semiconductor wafers |
EP0546670B2 (de) * | 1991-12-13 | 2000-11-08 | Ford Motor Company Limited | Metallnitridfilm |
US6081034A (en) | 1992-06-12 | 2000-06-27 | Micron Technology, Inc. | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
US5350719A (en) * | 1992-11-06 | 1994-09-27 | Ford Motor Company | Preparation of titanium nitride-containing refractory material composites |
FR2708924B1 (fr) * | 1993-08-12 | 1995-10-20 | Saint Gobain Vitrage Int | Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent. |
US5856236A (en) | 1996-06-14 | 1999-01-05 | Micron Technology, Inc. | Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer |
US7858518B2 (en) | 1998-04-07 | 2010-12-28 | Micron Technology, Inc. | Method for forming a selective contact and local interconnect in situ |
DE19904378B4 (de) * | 1999-02-03 | 2006-10-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Nitrid-Einkristallen |
US6967159B2 (en) * | 2002-08-28 | 2005-11-22 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using organic amines |
US6995081B2 (en) * | 2002-08-28 | 2006-02-07 | Micron Technology, Inc. | Systems and methods for forming tantalum silicide layers |
US6794284B2 (en) * | 2002-08-28 | 2004-09-21 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using disilazanes |
US7521356B2 (en) * | 2005-09-01 | 2009-04-21 | Micron Technology, Inc. | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
US7799679B2 (en) * | 2008-06-24 | 2010-09-21 | Intel Corporation | Liquid phase molecular self-assembly for barrier deposition and structures formed thereby |
US9231206B2 (en) * | 2013-09-13 | 2016-01-05 | Micron Technology, Inc. | Methods of forming a ferroelectric memory cell |
CN104928656A (zh) * | 2015-07-01 | 2015-09-23 | 西北工业大学 | 氮化钛薄膜的制备方法 |
CN110775949A (zh) * | 2019-12-06 | 2020-02-11 | 济南大学 | 一种氮化钛纳米材料的制备方法及其应用 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4482689A (en) * | 1984-03-12 | 1984-11-13 | Dow Corning Corporation | Process for the preparation of polymetallo(disily)silazane polymers and the polymers therefrom |
JPH0662776B2 (ja) * | 1989-08-24 | 1994-08-17 | 信越化学工業株式会社 | ポリチタノカルボシラザン重合体及び該重合体を用いたセラミックスの製造方法 |
-
1990
- 1990-12-10 US US07/625,180 patent/US5087593A/en not_active Expired - Fee Related
-
1991
- 1991-10-08 CA CA002052967A patent/CA2052967A1/en not_active Abandoned
- 1991-11-12 JP JP3295736A patent/JP2978306B2/ja not_active Expired - Lifetime
- 1991-12-09 EP EP91311432A patent/EP0490614B1/de not_active Expired - Lifetime
- 1991-12-09 DE DE69117021T patent/DE69117021T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0490614A1 (de) | 1992-06-17 |
JPH04265209A (ja) | 1992-09-21 |
EP0490614B1 (de) | 1996-02-07 |
CA2052967A1 (en) | 1992-06-11 |
JP2978306B2 (ja) | 1999-11-15 |
US5087593A (en) | 1992-02-11 |
DE69117021T2 (de) | 1996-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |