DE69127656T2 - Verfahren zum Herstellen von Dünnfilmtransistoren - Google Patents

Verfahren zum Herstellen von Dünnfilmtransistoren

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Publication number
DE69127656T2
DE69127656T2 DE69127656T DE69127656T DE69127656T2 DE 69127656 T2 DE69127656 T2 DE 69127656T2 DE 69127656 T DE69127656 T DE 69127656T DE 69127656 T DE69127656 T DE 69127656T DE 69127656 T2 DE69127656 T2 DE 69127656T2
Authority
DE
Germany
Prior art keywords
thin film
film transistors
manufacturing thin
manufacturing
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69127656T
Other languages
English (en)
Other versions
DE69127656D1 (de
Inventor
Hongyong Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE69127656D1 publication Critical patent/DE69127656D1/de
Application granted granted Critical
Publication of DE69127656T2 publication Critical patent/DE69127656T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02441Group 14 semiconducting materials
    • H01L21/0245Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02488Insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02502Layer structure consisting of two layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686Pulsed laser beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
DE69127656T 1990-06-01 1991-06-03 Verfahren zum Herstellen von Dünnfilmtransistoren Expired - Lifetime DE69127656T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2145069A JP2700277B2 (ja) 1990-06-01 1990-06-01 薄膜トランジスタの作製方法

Publications (2)

Publication Number Publication Date
DE69127656D1 DE69127656D1 (de) 1997-10-23
DE69127656T2 true DE69127656T2 (de) 1998-04-30

Family

ID=15376664

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127656T Expired - Lifetime DE69127656T2 (de) 1990-06-01 1991-06-03 Verfahren zum Herstellen von Dünnfilmtransistoren

Country Status (5)

Country Link
US (3) US6458200B1 (de)
EP (1) EP0459836B1 (de)
JP (1) JP2700277B2 (de)
KR (1) KR950007355B1 (de)
DE (1) DE69127656T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2700277B2 (ja) 1990-06-01 1998-01-19 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US5930608A (en) 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
JP3587537B2 (ja) 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
CN100359633C (zh) * 1992-12-09 2008-01-02 株式会社半导体能源研究所 制造半导体器件的方法
TW435820U (en) 1993-01-18 2001-05-16 Semiconductor Energy Lab MIS semiconductor device
JP3173926B2 (ja) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US5681760A (en) * 1995-01-03 1997-10-28 Goldstar Electron Co., Ltd. Method for manufacturing thin film transistor
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JP3917205B2 (ja) * 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6872607B2 (en) * 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7291522B2 (en) * 2004-10-28 2007-11-06 Hewlett-Packard Development Company, L.P. Semiconductor devices and methods of making
JP6003321B2 (ja) * 2012-07-18 2016-10-05 Jfeスチール株式会社 方向性電磁鋼板の製造方法

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US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
JPS558026A (en) 1978-06-30 1980-01-21 Matsushita Electric Ind Co Ltd Semi-conductor device manufacturing method
EP0171509B1 (de) * 1979-07-24 1990-10-31 Hughes Aircraft Company Verfahren zur Laserbehandlung für "Silizium auf Saphir"
US4266986A (en) * 1979-11-29 1981-05-12 Bell Telephone Laboratories, Incorporated Passivation of defects in laser annealed semiconductors
JPS5785262A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of metal oxide semiconductor type semiconductor device
JPS5814524A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 半導体装置の製造方法
JPS58164267A (ja) 1982-03-25 1983-09-29 Seiko Epson Corp 薄膜シリコントランジスタの製造方法
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS61135110A (ja) * 1984-12-05 1986-06-23 Fujitsu Ltd 半導体装置の製造方法
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
DE3689735T2 (de) * 1985-08-02 1994-06-30 Semiconductor Energy Lab Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
JPH07120802B2 (ja) * 1985-08-08 1995-12-20 ソニー株式会社 半導体装置の製造方法
JPS6239067A (ja) 1985-08-13 1987-02-20 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JPS62254467A (ja) * 1986-04-28 1987-11-06 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
JPS63200572A (ja) 1987-02-17 1988-08-18 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPS63250178A (ja) 1987-04-07 1988-10-18 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPS63292682A (ja) * 1987-05-26 1988-11-29 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPH07114184B2 (ja) * 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
US4743567A (en) * 1987-08-11 1988-05-10 North American Philips Corp. Method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators
JPH01162376A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
JPH02130912A (ja) 1988-11-11 1990-05-18 Seiko Epson Corp 薄膜半導体装置
JP2867264B2 (ja) * 1989-02-28 1999-03-08 株式会社日立製作所 液晶表示装置およびその製造方法
JP2832991B2 (ja) * 1989-04-14 1998-12-09 ソニー株式会社 多層配線形成方法および連続処理装置
JP2700277B2 (ja) * 1990-06-01 1998-01-19 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
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US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same

Also Published As

Publication number Publication date
DE69127656D1 (de) 1997-10-23
US6458200B1 (en) 2002-10-01
US20050009254A1 (en) 2005-01-13
EP0459836A3 (en) 1993-02-24
JP2700277B2 (ja) 1998-01-19
JPH0437144A (ja) 1992-02-07
US7018874B2 (en) 2006-03-28
EP0459836A2 (de) 1991-12-04
KR950007355B1 (ko) 1995-07-10
EP0459836B1 (de) 1997-09-17
US20030017656A1 (en) 2003-01-23
US6740547B2 (en) 2004-05-25

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