DE69127792D1 - Verfahren zur Herstellung eines Musters in einer Schicht - Google Patents
Verfahren zur Herstellung eines Musters in einer SchichtInfo
- Publication number
- DE69127792D1 DE69127792D1 DE69127792T DE69127792T DE69127792D1 DE 69127792 D1 DE69127792 D1 DE 69127792D1 DE 69127792 T DE69127792 T DE 69127792T DE 69127792 T DE69127792 T DE 69127792T DE 69127792 D1 DE69127792 D1 DE 69127792D1
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- making
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/555,217 US5126289A (en) | 1990-07-20 | 1990-07-20 | Semiconductor lithography methods using an arc of organic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69127792D1 true DE69127792D1 (de) | 1997-11-06 |
| DE69127792T2 DE69127792T2 (de) | 1998-04-09 |
Family
ID=24216442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69127792T Expired - Fee Related DE69127792T2 (de) | 1990-07-20 | 1991-07-11 | Verfahren zur Herstellung eines Musters in einer Schicht |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5126289A (de) |
| EP (1) | EP0470707B1 (de) |
| JP (1) | JP2719465B2 (de) |
| DE (1) | DE69127792T2 (de) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930008866B1 (ko) * | 1990-04-20 | 1993-09-16 | 가부시키가이샤 도시바 | 반도체장치 및 그 제조방법 |
| FR2687953A1 (fr) * | 1992-03-02 | 1993-09-03 | Galabert Alain | Support de dessins en plaque et procede de reproduction mis en óoeuvre sur un tel support. |
| JP2694097B2 (ja) * | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
| JP2791525B2 (ja) * | 1992-04-16 | 1998-08-27 | 三菱電機株式会社 | 反射防止膜の選定方法およびその方法により選定された反射防止膜 |
| US5308742A (en) * | 1992-06-03 | 1994-05-03 | At&T Bell Laboratories | Method of etching anti-reflection coating |
| JPH05343308A (ja) * | 1992-06-09 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| KR950007478B1 (ko) * | 1992-06-17 | 1995-07-11 | 금성일렉트론주식회사 | 메탈 마스크 공정시 광반사 감소방법 |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| AU5681194A (en) * | 1993-01-21 | 1994-08-15 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5378659A (en) * | 1993-07-06 | 1995-01-03 | Motorola Inc. | Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
| JP2586383B2 (ja) * | 1993-07-27 | 1997-02-26 | 日本電気株式会社 | 反射および干渉防止樹脂膜の形成方法 |
| US5324689A (en) * | 1993-07-28 | 1994-06-28 | Taiwan Semiconductor Manufacturing Company | Critical dimension control with a planarized underlayer |
| US5346587A (en) * | 1993-08-12 | 1994-09-13 | Micron Semiconductor, Inc. | Planarization of a gate electrode for improved gate patterning over non-planar active area isolation |
| US5607824A (en) | 1994-07-27 | 1997-03-04 | International Business Machines Corporation | Antireflective coating for microlithography |
| US5449639A (en) * | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
| US5525542A (en) * | 1995-02-24 | 1996-06-11 | Motorola, Inc. | Method for making a semiconductor device having anti-reflective coating |
| KR100434132B1 (ko) * | 1995-07-14 | 2004-09-08 | 텍사스 인스트루먼츠 인코포레이티드 | 중간층리쏘그래피 |
| KR100434133B1 (ko) * | 1995-07-14 | 2004-08-09 | 텍사스 인스트루먼츠 인코포레이티드 | 중간층리쏘그래피 |
| US5976769A (en) * | 1995-07-14 | 1999-11-02 | Texas Instruments Incorporated | Intermediate layer lithography |
| US5879853A (en) * | 1996-01-18 | 1999-03-09 | Kabushiki Kaisha Toshiba | Top antireflective coating material and its process for DUV and VUV lithography systems |
| JP3511802B2 (ja) * | 1996-05-27 | 2004-03-29 | ソニー株式会社 | 金属配線の形成方法 |
| US5804088A (en) * | 1996-07-12 | 1998-09-08 | Texas Instruments Incorporated | Intermediate layer lithography |
| JP3053072B2 (ja) * | 1996-09-10 | 2000-06-19 | 東京応化工業株式会社 | レジスト積層体及びそれを用いたパターン形成方法 |
| US5728493A (en) * | 1996-10-04 | 1998-03-17 | Chartered Semiconductor Manufacturing Pte Ltd | Antireflection mask for contact hole opening |
| US5948598A (en) * | 1996-10-31 | 1999-09-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Anti-reflective silicon nitride film using in-situ deposition |
| US5854126A (en) * | 1997-03-31 | 1998-12-29 | Siemens Aktiengesellschaft | Method for forming metallization in semiconductor devices with a self-planarizing material |
| US5883011A (en) * | 1997-06-18 | 1999-03-16 | Vlsi Technology, Inc. | Method of removing an inorganic antireflective coating from a semiconductor substrate |
| US6013582A (en) * | 1997-12-08 | 2000-01-11 | Applied Materials, Inc. | Method for etching silicon oxynitride and inorganic antireflection coatings |
| US6291356B1 (en) | 1997-12-08 | 2001-09-18 | Applied Materials, Inc. | Method for etching silicon oxynitride and dielectric antireflection coatings |
| US6391786B1 (en) * | 1997-12-31 | 2002-05-21 | Lam Research Corporation | Etching process for organic anti-reflective coating |
| US6051369A (en) * | 1998-01-08 | 2000-04-18 | Kabushiki Kaisha Toshiba | Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process |
| US6350555B1 (en) | 1998-01-14 | 2002-02-26 | Precision Coatings, Inc. | Direct write imaging medium |
| US6057246A (en) * | 1998-04-28 | 2000-05-02 | Vanguard International Semiconductor Corporation | Method for etching a metal layer with dimensional control |
| US6297170B1 (en) | 1998-06-23 | 2001-10-02 | Vlsi Technology, Inc. | Sacrificial multilayer anti-reflective coating for mos gate formation |
| EP1011135A3 (de) * | 1998-12-14 | 2000-07-26 | Conexant Systems, Inc. | Verbindungstruktur für eine Halbleiteranordnung mit einer PECVD inorganischen dielektrischen Schicht, und Herstellungsverfahren dafür |
| KR100804873B1 (ko) | 1999-06-10 | 2008-02-20 | 얼라이드시그날 인코퍼레이티드 | 포토리소그래피용 ｓｏｇ 반사방지 코팅 |
| US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| KR100541671B1 (ko) * | 1999-06-23 | 2006-01-12 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| US6225215B1 (en) | 1999-09-24 | 2001-05-01 | Lsi Logic Corporation | Method for enhancing anti-reflective coatings used in photolithography of electronic devices |
| US6527867B1 (en) * | 2000-05-30 | 2003-03-04 | Lsi Logic Corporation | Method for enhancing anti-reflective coatings used in photolithography of electronic devices |
| US7125496B2 (en) * | 2001-06-28 | 2006-10-24 | Hynix Semiconductor Inc. | Etching method using photoresist etch barrier |
| WO2003044600A1 (en) | 2001-11-15 | 2003-05-30 | Honeywell International Inc. | Spin-on anti-reflective coatings for photolithography |
| DE10227807A1 (de) * | 2002-06-21 | 2004-01-22 | Honeywell Specialty Chemicals Seelze Gmbh | Silylalkylester von Anthracen- und Phenanthrencarbonsäuren |
| US7473377B2 (en) | 2002-06-27 | 2009-01-06 | Tokyo Electron Limited | Plasma processing method |
| KR100472031B1 (ko) * | 2002-08-07 | 2005-03-10 | 동부아남반도체 주식회사 | 반도체 소자 제조 방법 |
| TW200523298A (en) | 2003-08-04 | 2005-07-16 | Honeywell Int Inc | Coating composition optimization for via fill and photolithography applications and methods of preparation thereof |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| US7470505B2 (en) * | 2005-09-23 | 2008-12-30 | Lexmark International, Inc. | Methods for making micro-fluid ejection head structures |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| US7955782B2 (en) * | 2008-09-22 | 2011-06-07 | Honeywell International Inc. | Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| JP5517848B2 (ja) * | 2010-09-08 | 2014-06-11 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| WO2016167892A1 (en) | 2015-04-13 | 2016-10-20 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| JP6765891B2 (ja) * | 2016-07-29 | 2020-10-07 | キヤノン株式会社 | 構造体の製造方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2371497A1 (fr) * | 1976-06-23 | 1978-06-16 | Nippon Kogaku Kk | Revetement anti-reflechissant pour support de resine synthetique |
| US4380488A (en) * | 1980-10-14 | 1983-04-19 | Branson International Plasma Corporation | Process and gas mixture for etching aluminum |
| US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
| EP0264650B1 (de) * | 1982-09-30 | 1992-08-26 | Brewer Science, Inc. | Antireflexionsschicht |
| JPH0612452B2 (ja) * | 1982-09-30 | 1994-02-16 | ブリュ−ワ−・サイエンス・インコ−ポレイテッド | 集積回路素子の製造方法 |
| US4444618A (en) * | 1983-03-03 | 1984-04-24 | General Electric Company | Processes and gas mixtures for the reactive ion etching of aluminum and aluminum alloys |
| US4510173A (en) * | 1983-04-25 | 1985-04-09 | Kabushiki Kaisha Toshiba | Method for forming flattened film |
| JPH0760814B2 (ja) * | 1983-08-01 | 1995-06-28 | 東京応化工業株式会社 | 金属被膜の選択的エッチング方法 |
| US4554229A (en) * | 1984-04-06 | 1985-11-19 | At&T Technologies, Inc. | Multilayer hybrid integrated circuit |
| US4601972A (en) * | 1984-04-06 | 1986-07-22 | At&T Technologies, Inc. | Photodefinable triazine based composition |
| US4557797A (en) * | 1984-06-01 | 1985-12-10 | Texas Instruments Incorporated | Resist process using anti-reflective coating |
| DE3439482A1 (de) * | 1984-10-27 | 1986-05-07 | Röhm GmbH, 6100 Darmstadt | Verfahren zur beschichtung von substraten mit kratzfesten, nichtreflektierenden ueberzuegen |
| GB2170649A (en) * | 1985-01-18 | 1986-08-06 | Intel Corp | Sputtered silicon as an anti-reflective coating for metal layer lithography |
| CA1255142A (en) * | 1985-03-11 | 1989-06-06 | Edward C. Fredericks | Method and composition of matter for improving conductor resolution in microelectronic circuits |
| JPS6265425A (ja) * | 1985-09-18 | 1987-03-24 | Sony Corp | 半導体装置の製造方法 |
| US4668606A (en) * | 1985-11-20 | 1987-05-26 | Eastman Kodak Company | Positive photoresist with antireflection coating having thermal stability |
| JPS62159143A (ja) * | 1985-12-30 | 1987-07-15 | Hitachi Chem Co Ltd | レジストの下層材料用組成物 |
| JPS62194621A (ja) * | 1986-02-20 | 1987-08-27 | Sony Corp | パタ−ンニング方法 |
| JPS63143819A (ja) * | 1986-12-06 | 1988-06-16 | Sony Corp | 半導体装置の製造方法 |
| US4985112A (en) * | 1987-02-09 | 1991-01-15 | International Business Machines Corporation | Enhanced plasma etching |
| US4820611A (en) * | 1987-04-24 | 1989-04-11 | Advanced Micro Devices, Inc. | Titanium nitride as an antireflection coating on highly reflective layers for photolithography |
| JPS63312643A (ja) * | 1987-06-16 | 1988-12-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| WO1990003598A1 (en) * | 1988-09-28 | 1990-04-05 | Brewer Science, Inc. | Multifunctional photolithographic compositions |
-
1990
- 1990-07-20 US US07/555,217 patent/US5126289A/en not_active Expired - Lifetime
-
1991
- 1991-07-10 JP JP3195025A patent/JP2719465B2/ja not_active Expired - Lifetime
- 1991-07-11 DE DE69127792T patent/DE69127792T2/de not_active Expired - Fee Related
- 1991-07-11 EP EP91306294A patent/EP0470707B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0470707A2 (de) | 1992-02-12 |
| JPH04254327A (ja) | 1992-09-09 |
| EP0470707B1 (de) | 1997-10-01 |
| DE69127792T2 (de) | 1998-04-09 |
| EP0470707A3 (de) | 1992-03-04 |
| JP2719465B2 (ja) | 1998-02-25 |
| US5126289A (en) | 1992-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |