US5787042A
(en)
*
|
1997-03-18 |
1998-07-28 |
Micron Technology, Inc. |
Method and apparatus for reading out a programmable resistor memory
|
US6103403A
(en)
*
|
1997-05-15 |
2000-08-15 |
University Of Kentucky Research Foundation Intellectual Property Development |
Clathrate structure for electronic and electro-optic applications
|
EP1044452B1
(de)
*
|
1997-12-04 |
2003-03-19 |
Axon Technologies Corporation |
Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür
|
US6487106B1
(en)
|
1999-01-12 |
2002-11-26 |
Arizona Board Of Regents |
Programmable microelectronic devices and method of forming and programming same
|
US6635914B2
(en)
|
2000-09-08 |
2003-10-21 |
Axon Technologies Corp. |
Microelectronic programmable device and methods of forming and programming the same
|
JP2002536840A
(ja)
*
|
1999-02-11 |
2002-10-29 |
アリゾナ ボード オブ リージェンツ |
プログラマブルマイクロエレクトロニックデバイスおよびその形成およびプログラミング方法
|
KR100282453B1
(ko)
*
|
1999-03-18 |
2001-02-15 |
김영환 |
반도체 소자 및 그 제조방법
|
US7675766B2
(en)
*
|
2000-02-11 |
2010-03-09 |
Axon Technologies Corporation |
Microelectric programmable device and methods of forming and programming the same
|
WO2002021542A1
(en)
*
|
2000-09-08 |
2002-03-14 |
Axon Technologies Corporation |
Microelectronic programmable device and methods of forming and programming the same
|
US6653193B2
(en)
*
|
2000-12-08 |
2003-11-25 |
Micron Technology, Inc. |
Resistance variable device
|
US6638820B2
(en)
*
|
2001-02-08 |
2003-10-28 |
Micron Technology, Inc. |
Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
|
JP4742429B2
(ja)
*
|
2001-02-19 |
2011-08-10 |
住友電気工業株式会社 |
ガラス微粒子堆積体の製造方法
|
US6727192B2
(en)
*
|
2001-03-01 |
2004-04-27 |
Micron Technology, Inc. |
Methods of metal doping a chalcogenide material
|
US6818481B2
(en)
|
2001-03-07 |
2004-11-16 |
Micron Technology, Inc. |
Method to manufacture a buried electrode PCRAM cell
|
US6734455B2
(en)
*
|
2001-03-15 |
2004-05-11 |
Micron Technology, Inc. |
Agglomeration elimination for metal sputter deposition of chalcogenides
|
WO2002091495A2
(en)
*
|
2001-05-07 |
2002-11-14 |
Coatue Corporation |
Molecular memory device
|
DE60220912T2
(de)
*
|
2001-05-07 |
2008-02-28 |
Advanced Micro Devices, Inc., Sunnyvale |
Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben
|
EP1390984B1
(de)
*
|
2001-05-07 |
2009-08-26 |
Advanced Micro Devices, Inc. |
Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendet
|
AU2002340795A1
(en)
|
2001-05-07 |
2002-11-18 |
Advanced Micro Devices, Inc. |
Reversible field-programmable electric interconnects
|
WO2002091494A1
(en)
*
|
2001-05-07 |
2002-11-14 |
Advanced Micro Devices, Inc. |
Switch element having memeory effect
|
WO2002091385A1
(en)
*
|
2001-05-07 |
2002-11-14 |
Advanced Micro Devices, Inc. |
Molecular memory cell
|
US7102150B2
(en)
*
|
2001-05-11 |
2006-09-05 |
Harshfield Steven T |
PCRAM memory cell and method of making same
|
US6951805B2
(en)
*
|
2001-08-01 |
2005-10-04 |
Micron Technology, Inc. |
Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
|
US6858481B2
(en)
|
2001-08-13 |
2005-02-22 |
Advanced Micro Devices, Inc. |
Memory device with active and passive layers
|
US6838720B2
(en)
*
|
2001-08-13 |
2005-01-04 |
Advanced Micro Devices, Inc. |
Memory device with active passive layers
|
US6768157B2
(en)
|
2001-08-13 |
2004-07-27 |
Advanced Micro Devices, Inc. |
Memory device
|
US6806526B2
(en)
|
2001-08-13 |
2004-10-19 |
Advanced Micro Devices, Inc. |
Memory device
|
EP1434232B1
(de)
|
2001-08-13 |
2007-09-19 |
Advanced Micro Devices, Inc. |
Speicherzelle
|
US6737312B2
(en)
|
2001-08-27 |
2004-05-18 |
Micron Technology, Inc. |
Method of fabricating dual PCRAM cells sharing a common electrode
|
US6955940B2
(en)
*
|
2001-08-29 |
2005-10-18 |
Micron Technology, Inc. |
Method of forming chalcogenide comprising devices
|
US6784018B2
(en)
|
2001-08-29 |
2004-08-31 |
Micron Technology, Inc. |
Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
|
US6881623B2
(en)
*
|
2001-08-29 |
2005-04-19 |
Micron Technology, Inc. |
Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
|
US6709958B2
(en)
|
2001-08-30 |
2004-03-23 |
Micron Technology, Inc. |
Integrated circuit device and fabrication using metal-doped chalcogenide materials
|
US6646902B2
(en)
|
2001-08-30 |
2003-11-11 |
Micron Technology, Inc. |
Method of retaining memory state in a programmable conductor RAM
|
WO2003032392A2
(en)
*
|
2001-10-09 |
2003-04-17 |
Axon Technologies Corporation |
Programmable microelectronic device, structure, and system, and method of forming the same
|
US6815818B2
(en)
|
2001-11-19 |
2004-11-09 |
Micron Technology, Inc. |
Electrode structure for use in an integrated circuit
|
US6791859B2
(en)
|
2001-11-20 |
2004-09-14 |
Micron Technology, Inc. |
Complementary bit PCRAM sense amplifier and method of operation
|
US6873538B2
(en)
*
|
2001-12-20 |
2005-03-29 |
Micron Technology, Inc. |
Programmable conductor random access memory and a method for writing thereto
|
US6909656B2
(en)
*
|
2002-01-04 |
2005-06-21 |
Micron Technology, Inc. |
PCRAM rewrite prevention
|
US20030143782A1
(en)
*
|
2002-01-31 |
2003-07-31 |
Gilton Terry L. |
Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
|
KR100433407B1
(ko)
*
|
2002-02-06 |
2004-05-31 |
삼성광주전자 주식회사 |
업라이트형 진공청소기
|
US6867064B2
(en)
*
|
2002-02-15 |
2005-03-15 |
Micron Technology, Inc. |
Method to alter chalcogenide glass for improved switching characteristics
|
US6791885B2
(en)
*
|
2002-02-19 |
2004-09-14 |
Micron Technology, Inc. |
Programmable conductor random access memory and method for sensing same
|
US7151273B2
(en)
*
|
2002-02-20 |
2006-12-19 |
Micron Technology, Inc. |
Silver-selenide/chalcogenide glass stack for resistance variable memory
|
US6847535B2
(en)
|
2002-02-20 |
2005-01-25 |
Micron Technology, Inc. |
Removable programmable conductor memory card and associated read/write device and method of operation
|
US6891749B2
(en)
*
|
2002-02-20 |
2005-05-10 |
Micron Technology, Inc. |
Resistance variable ‘on ’ memory
|
US6809362B2
(en)
|
2002-02-20 |
2004-10-26 |
Micron Technology, Inc. |
Multiple data state memory cell
|
US7087919B2
(en)
*
|
2002-02-20 |
2006-08-08 |
Micron Technology, Inc. |
Layered resistance variable memory device and method of fabrication
|
US6937528B2
(en)
*
|
2002-03-05 |
2005-08-30 |
Micron Technology, Inc. |
Variable resistance memory and method for sensing same
|
US6849868B2
(en)
|
2002-03-14 |
2005-02-01 |
Micron Technology, Inc. |
Methods and apparatus for resistance variable material cells
|
US6751114B2
(en)
*
|
2002-03-28 |
2004-06-15 |
Micron Technology, Inc. |
Method for programming a memory cell
|
US6858482B2
(en)
*
|
2002-04-10 |
2005-02-22 |
Micron Technology, Inc. |
Method of manufacture of programmable switching circuits and memory cells employing a glass layer
|
US6855975B2
(en)
*
|
2002-04-10 |
2005-02-15 |
Micron Technology, Inc. |
Thin film diode integrated with chalcogenide memory cell
|
US6864500B2
(en)
|
2002-04-10 |
2005-03-08 |
Micron Technology, Inc. |
Programmable conductor memory cell structure
|
US6731528B2
(en)
*
|
2002-05-03 |
2004-05-04 |
Micron Technology, Inc. |
Dual write cycle programmable conductor memory system and method of operation
|
US6825135B2
(en)
*
|
2002-06-06 |
2004-11-30 |
Micron Technology, Inc. |
Elimination of dendrite formation during metal/chalcogenide glass deposition
|
US6890790B2
(en)
*
|
2002-06-06 |
2005-05-10 |
Micron Technology, Inc. |
Co-sputter deposition of metal-doped chalcogenides
|
US7015494B2
(en)
*
|
2002-07-10 |
2006-03-21 |
Micron Technology, Inc. |
Assemblies displaying differential negative resistance
|
US7209378B2
(en)
*
|
2002-08-08 |
2007-04-24 |
Micron Technology, Inc. |
Columnar 1T-N memory cell structure
|
US7018863B2
(en)
*
|
2002-08-22 |
2006-03-28 |
Micron Technology, Inc. |
Method of manufacture of a resistance variable memory cell
|
US7364644B2
(en)
|
2002-08-29 |
2008-04-29 |
Micron Technology, Inc. |
Silver selenide film stoichiometry and morphology control in sputter deposition
|
US6864521B2
(en)
*
|
2002-08-29 |
2005-03-08 |
Micron Technology, Inc. |
Method to control silver concentration in a resistance variable memory element
|
US20040040837A1
(en)
*
|
2002-08-29 |
2004-03-04 |
Mcteer Allen |
Method of forming chalcogenide sputter target
|
US7010644B2
(en)
|
2002-08-29 |
2006-03-07 |
Micron Technology, Inc. |
Software refreshed memory device and method
|
US6867114B2
(en)
|
2002-08-29 |
2005-03-15 |
Micron Technology Inc. |
Methods to form a memory cell with metal-rich metal chalcogenide
|
US7163837B2
(en)
|
2002-08-29 |
2007-01-16 |
Micron Technology, Inc. |
Method of forming a resistance variable memory element
|
US7294527B2
(en)
|
2002-08-29 |
2007-11-13 |
Micron Technology Inc. |
Method of forming a memory cell
|
US6831019B1
(en)
*
|
2002-08-29 |
2004-12-14 |
Micron Technology, Inc. |
Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
|
US6867996B2
(en)
*
|
2002-08-29 |
2005-03-15 |
Micron Technology, Inc. |
Single-polarity programmable resistance-variable memory element
|
US7012276B2
(en)
*
|
2002-09-17 |
2006-03-14 |
Advanced Micro Devices, Inc. |
Organic thin film Zener diodes
|
US6813178B2
(en)
*
|
2003-03-12 |
2004-11-02 |
Micron Technology, Inc. |
Chalcogenide glass constant current device, and its method of fabrication and operation
|
US7022579B2
(en)
*
|
2003-03-14 |
2006-04-04 |
Micron Technology, Inc. |
Method for filling via with metal
|
US7050327B2
(en)
*
|
2003-04-10 |
2006-05-23 |
Micron Technology, Inc. |
Differential negative resistance memory
|
US6930909B2
(en)
|
2003-06-25 |
2005-08-16 |
Micron Technology, Inc. |
Memory device and methods of controlling resistance variation and resistance profile drift
|
US6961277B2
(en)
*
|
2003-07-08 |
2005-11-01 |
Micron Technology, Inc. |
Method of refreshing a PCRAM memory device
|
US7061004B2
(en)
*
|
2003-07-21 |
2006-06-13 |
Micron Technology, Inc. |
Resistance variable memory elements and methods of formation
|
US6903361B2
(en)
*
|
2003-09-17 |
2005-06-07 |
Micron Technology, Inc. |
Non-volatile memory structure
|
US7251118B2
(en)
*
|
2003-10-02 |
2007-07-31 |
Donald Nevin |
Method and apparatus for large scale storage of electrical potential
|
US7098068B2
(en)
*
|
2004-03-10 |
2006-08-29 |
Micron Technology, Inc. |
Method of forming a chalcogenide material containing device
|
US7583551B2
(en)
|
2004-03-10 |
2009-09-01 |
Micron Technology, Inc. |
Power management control and controlling memory refresh operations
|
US7354793B2
(en)
|
2004-08-12 |
2008-04-08 |
Micron Technology, Inc. |
Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
|
US7326950B2
(en)
|
2004-07-19 |
2008-02-05 |
Micron Technology, Inc. |
Memory device with switching glass layer
|
US7190048B2
(en)
*
|
2004-07-19 |
2007-03-13 |
Micron Technology, Inc. |
Resistance variable memory device and method of fabrication
|
US7365411B2
(en)
*
|
2004-08-12 |
2008-04-29 |
Micron Technology, Inc. |
Resistance variable memory with temperature tolerant materials
|
US7151688B2
(en)
*
|
2004-09-01 |
2006-12-19 |
Micron Technology, Inc. |
Sensing of resistance variable memory devices
|
US7374174B2
(en)
*
|
2004-12-22 |
2008-05-20 |
Micron Technology, Inc. |
Small electrode for resistance variable devices
|
US20060131555A1
(en)
*
|
2004-12-22 |
2006-06-22 |
Micron Technology, Inc. |
Resistance variable devices with controllable channels
|
US7317200B2
(en)
|
2005-02-23 |
2008-01-08 |
Micron Technology, Inc. |
SnSe-based limited reprogrammable cell
|
US7427770B2
(en)
*
|
2005-04-22 |
2008-09-23 |
Micron Technology, Inc. |
Memory array for increased bit density
|
US7269044B2
(en)
|
2005-04-22 |
2007-09-11 |
Micron Technology, Inc. |
Method and apparatus for accessing a memory array
|
US7709289B2
(en)
|
2005-04-22 |
2010-05-04 |
Micron Technology, Inc. |
Memory elements having patterned electrodes and method of forming the same
|
US7269079B2
(en)
|
2005-05-16 |
2007-09-11 |
Micron Technology, Inc. |
Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
|
US7233520B2
(en)
*
|
2005-07-08 |
2007-06-19 |
Micron Technology, Inc. |
Process for erasing chalcogenide variable resistance memory bits
|
US7274034B2
(en)
*
|
2005-08-01 |
2007-09-25 |
Micron Technology, Inc. |
Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
|
US7317567B2
(en)
*
|
2005-08-02 |
2008-01-08 |
Micron Technology, Inc. |
Method and apparatus for providing color changing thin film material
|
US7332735B2
(en)
*
|
2005-08-02 |
2008-02-19 |
Micron Technology, Inc. |
Phase change memory cell and method of formation
|
US7579615B2
(en)
*
|
2005-08-09 |
2009-08-25 |
Micron Technology, Inc. |
Access transistor for memory device
|
US20070037316A1
(en)
*
|
2005-08-09 |
2007-02-15 |
Micron Technology, Inc. |
Memory cell contact using spacers
|
US7304368B2
(en)
*
|
2005-08-11 |
2007-12-04 |
Micron Technology, Inc. |
Chalcogenide-based electrokinetic memory element and method of forming the same
|
US7251154B2
(en)
*
|
2005-08-15 |
2007-07-31 |
Micron Technology, Inc. |
Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
|
US7277313B2
(en)
*
|
2005-08-31 |
2007-10-02 |
Micron Technology, Inc. |
Resistance variable memory element with threshold device and method of forming the same
|
US7560723B2
(en)
|
2006-08-29 |
2009-07-14 |
Micron Technology, Inc. |
Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
|
US10134985B2
(en)
|
2006-10-20 |
2018-11-20 |
The Regents Of The University Of Michigan |
Non-volatile solid state resistive switching devices
|
US8467236B2
(en)
*
|
2008-08-01 |
2013-06-18 |
Boise State University |
Continuously variable resistor
|
EP2351083B1
(de)
|
2008-10-20 |
2016-09-28 |
The Regents of the University of Michigan |
Nanoskaliger crossbar-speicher auf siliziumbasis
|
US8547727B2
(en)
*
|
2008-12-12 |
2013-10-01 |
Hewlett-Packard Development Company, L.P. |
Memristive device
|
US8384401B2
(en)
*
|
2010-03-31 |
2013-02-26 |
Hewlett-Packard Development Company, L.P. |
Fast time-tagged event detection using resistive switching devices
|
US9570678B1
(en)
|
2010-06-08 |
2017-02-14 |
Crossbar, Inc. |
Resistive RAM with preferental filament formation region and methods
|
US8946046B1
(en)
|
2012-05-02 |
2015-02-03 |
Crossbar, Inc. |
Guided path for forming a conductive filament in RRAM
|
US9601692B1
(en)
|
2010-07-13 |
2017-03-21 |
Crossbar, Inc. |
Hetero-switching layer in a RRAM device and method
|
US9012307B2
(en)
|
2010-07-13 |
2015-04-21 |
Crossbar, Inc. |
Two terminal resistive switching device structure and method of fabricating
|
US8441835B2
(en)
|
2010-06-11 |
2013-05-14 |
Crossbar, Inc. |
Interface control for improved switching in RRAM
|
WO2011156787A2
(en)
|
2010-06-11 |
2011-12-15 |
Crossbar, Inc. |
Pillar structure for memory device and method
|
US8374018B2
(en)
|
2010-07-09 |
2013-02-12 |
Crossbar, Inc. |
Resistive memory using SiGe material
|
US8884261B2
(en)
|
2010-08-23 |
2014-11-11 |
Crossbar, Inc. |
Device switching using layered device structure
|
US8947908B2
(en)
|
2010-11-04 |
2015-02-03 |
Crossbar, Inc. |
Hetero-switching layer in a RRAM device and method
|
US8467227B1
(en)
|
2010-11-04 |
2013-06-18 |
Crossbar, Inc. |
Hetero resistive switching material layer in RRAM device and method
|
US8168506B2
(en)
|
2010-07-13 |
2012-05-01 |
Crossbar, Inc. |
On/off ratio for non-volatile memory device and method
|
US8569172B1
(en)
|
2012-08-14 |
2013-10-29 |
Crossbar, Inc. |
Noble metal/non-noble metal electrode for RRAM applications
|
JP2012039042A
(ja)
*
|
2010-08-11 |
2012-02-23 |
Sony Corp |
メモリ素子
|
US9401475B1
(en)
|
2010-08-23 |
2016-07-26 |
Crossbar, Inc. |
Method for silver deposition for a non-volatile memory device
|
US8889521B1
(en)
|
2012-09-14 |
2014-11-18 |
Crossbar, Inc. |
Method for silver deposition for a non-volatile memory device
|
US8492195B2
(en)
|
2010-08-23 |
2013-07-23 |
Crossbar, Inc. |
Method for forming stackable non-volatile resistive switching memory devices
|
US8404553B2
(en)
|
2010-08-23 |
2013-03-26 |
Crossbar, Inc. |
Disturb-resistant non-volatile memory device and method
|
US8558212B2
(en)
|
2010-09-29 |
2013-10-15 |
Crossbar, Inc. |
Conductive path in switching material in a resistive random access memory device and control
|
US8391049B2
(en)
|
2010-09-29 |
2013-03-05 |
Crossbar, Inc. |
Resistor structure for a non-volatile memory device and method
|
USRE46335E1
(en)
|
2010-11-04 |
2017-03-07 |
Crossbar, Inc. |
Switching device having a non-linear element
|
US8502185B2
(en)
|
2011-05-31 |
2013-08-06 |
Crossbar, Inc. |
Switching device having a non-linear element
|
US8088688B1
(en)
|
2010-11-05 |
2012-01-03 |
Crossbar, Inc. |
p+ polysilicon material on aluminum for non-volatile memory device and method
|
US8930174B2
(en)
|
2010-12-28 |
2015-01-06 |
Crossbar, Inc. |
Modeling technique for resistive random access memory (RRAM) cells
|
US9153623B1
(en)
|
2010-12-31 |
2015-10-06 |
Crossbar, Inc. |
Thin film transistor steering element for a non-volatile memory device
|
US8791010B1
(en)
|
2010-12-31 |
2014-07-29 |
Crossbar, Inc. |
Silver interconnects for stacked non-volatile memory device and method
|
US8815696B1
(en)
|
2010-12-31 |
2014-08-26 |
Crossbar, Inc. |
Disturb-resistant non-volatile memory device using via-fill and etchback technique
|
US8450710B2
(en)
|
2011-05-27 |
2013-05-28 |
Crossbar, Inc. |
Low temperature p+ silicon junction material for a non-volatile memory device
|
US8394670B2
(en)
|
2011-05-31 |
2013-03-12 |
Crossbar, Inc. |
Vertical diodes for non-volatile memory device
|
US9620206B2
(en)
|
2011-05-31 |
2017-04-11 |
Crossbar, Inc. |
Memory array architecture with two-terminal memory cells
|
US8619459B1
(en)
|
2011-06-23 |
2013-12-31 |
Crossbar, Inc. |
High operating speed resistive random access memory
|
US9564587B1
(en)
|
2011-06-30 |
2017-02-07 |
Crossbar, Inc. |
Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
|
US9627443B2
(en)
|
2011-06-30 |
2017-04-18 |
Crossbar, Inc. |
Three-dimensional oblique two-terminal memory with enhanced electric field
|
US8659929B2
(en)
|
2011-06-30 |
2014-02-25 |
Crossbar, Inc. |
Amorphous silicon RRAM with non-linear device and operation
|
US8946669B1
(en)
|
2012-04-05 |
2015-02-03 |
Crossbar, Inc. |
Resistive memory device and fabrication methods
|
US9166163B2
(en)
|
2011-06-30 |
2015-10-20 |
Crossbar, Inc. |
Sub-oxide interface layer for two-terminal memory
|
US9252191B2
(en)
|
2011-07-22 |
2016-02-02 |
Crossbar, Inc. |
Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
|
US10056907B1
(en)
|
2011-07-29 |
2018-08-21 |
Crossbar, Inc. |
Field programmable gate array utilizing two-terminal non-volatile memory
|
US8674724B2
(en)
|
2011-07-29 |
2014-03-18 |
Crossbar, Inc. |
Field programmable gate array utilizing two-terminal non-volatile memory
|
US9729155B2
(en)
|
2011-07-29 |
2017-08-08 |
Crossbar, Inc. |
Field programmable gate array utilizing two-terminal non-volatile memory
|
US8716098B1
(en)
|
2012-03-09 |
2014-05-06 |
Crossbar, Inc. |
Selective removal method and structure of silver in resistive switching device for a non-volatile memory device
|
US9087576B1
(en)
|
2012-03-29 |
2015-07-21 |
Crossbar, Inc. |
Low temperature fabrication method for a three-dimensional memory device and structure
|
US9685608B2
(en)
|
2012-04-13 |
2017-06-20 |
Crossbar, Inc. |
Reduced diffusion in metal electrode for two-terminal memory
|
US8658476B1
(en)
|
2012-04-20 |
2014-02-25 |
Crossbar, Inc. |
Low temperature P+ polycrystalline silicon material for non-volatile memory device
|
US8796658B1
(en)
|
2012-05-07 |
2014-08-05 |
Crossbar, Inc. |
Filamentary based non-volatile resistive memory device and method
|
US8765566B2
(en)
|
2012-05-10 |
2014-07-01 |
Crossbar, Inc. |
Line and space architecture for a non-volatile memory device
|
US9741765B1
(en)
|
2012-08-14 |
2017-08-22 |
Crossbar, Inc. |
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
|
US9583701B1
(en)
|
2012-08-14 |
2017-02-28 |
Crossbar, Inc. |
Methods for fabricating resistive memory device switching material using ion implantation
|
US8946673B1
(en)
|
2012-08-24 |
2015-02-03 |
Crossbar, Inc. |
Resistive switching device structure with improved data retention for non-volatile memory device and method
|
US9312483B2
(en)
|
2012-09-24 |
2016-04-12 |
Crossbar, Inc. |
Electrode structure for a non-volatile memory device and method
|
US9576616B2
(en)
|
2012-10-10 |
2017-02-21 |
Crossbar, Inc. |
Non-volatile memory with overwrite capability and low write amplification
|
US11068620B2
(en)
|
2012-11-09 |
2021-07-20 |
Crossbar, Inc. |
Secure circuit integrated with memory layer
|
US8982647B2
(en)
|
2012-11-14 |
2015-03-17 |
Crossbar, Inc. |
Resistive random access memory equalization and sensing
|
US9412790B1
(en)
|
2012-12-04 |
2016-08-09 |
Crossbar, Inc. |
Scalable RRAM device architecture for a non-volatile memory device and method
|
US9406379B2
(en)
|
2013-01-03 |
2016-08-02 |
Crossbar, Inc. |
Resistive random access memory with non-linear current-voltage relationship
|
US9112145B1
(en)
|
2013-01-31 |
2015-08-18 |
Crossbar, Inc. |
Rectified switching of two-terminal memory via real time filament formation
|
US9324942B1
(en)
|
2013-01-31 |
2016-04-26 |
Crossbar, Inc. |
Resistive memory cell with solid state diode
|
US8934280B1
(en)
|
2013-02-06 |
2015-01-13 |
Crossbar, Inc. |
Capacitive discharge programming for two-terminal memory cells
|
US9595604B2
(en)
*
|
2013-03-09 |
2017-03-14 |
Japan Science And Technology Agency |
Electronic element
|
US10290801B2
(en)
|
2014-02-07 |
2019-05-14 |
Crossbar, Inc. |
Scalable silicon based resistive memory device
|
JP6915744B2
(ja)
*
|
2018-03-30 |
2021-08-04 |
富士通株式会社 |
抵抗変化素子及びその製造方法、記憶装置
|