DE69132469T2 - Elektrische Anordnung mit einem dotierten amorphen Siliziumkanal - Google Patents

Elektrische Anordnung mit einem dotierten amorphen Siliziumkanal

Info

Publication number
DE69132469T2
DE69132469T2 DE69132469T DE69132469T DE69132469T2 DE 69132469 T2 DE69132469 T2 DE 69132469T2 DE 69132469 T DE69132469 T DE 69132469T DE 69132469 T DE69132469 T DE 69132469T DE 69132469 T2 DE69132469 T2 DE 69132469T2
Authority
DE
Germany
Prior art keywords
amorphous silicon
doped amorphous
silicon channel
electrical arrangement
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132469T
Other languages
English (en)
Other versions
DE69132469D1 (de
Inventor
Yoshio Kishimoto
Masaaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69132469D1 publication Critical patent/DE69132469D1/de
Application granted granted Critical
Publication of DE69132469T2 publication Critical patent/DE69132469T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1604—Amorphous materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
DE69132469T 1990-11-22 1991-11-22 Elektrische Anordnung mit einem dotierten amorphen Siliziumkanal Expired - Fee Related DE69132469T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2318733A JPH0770731B2 (ja) 1990-11-22 1990-11-22 電気可塑性素子

Publications (2)

Publication Number Publication Date
DE69132469D1 DE69132469D1 (de) 2000-12-21
DE69132469T2 true DE69132469T2 (de) 2001-06-21

Family

ID=18102341

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132469T Expired - Fee Related DE69132469T2 (de) 1990-11-22 1991-11-22 Elektrische Anordnung mit einem dotierten amorphen Siliziumkanal

Country Status (4)

Country Link
US (1) US5315131A (de)
EP (1) EP0487101B1 (de)
JP (1) JPH0770731B2 (de)
DE (1) DE69132469T2 (de)

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JPH0770731B2 (ja) 1995-07-31
DE69132469D1 (de) 2000-12-21
JPH04188875A (ja) 1992-07-07
EP0487101B1 (de) 2000-11-15
US5315131A (en) 1994-05-24
EP0487101A3 (en) 1994-06-08
EP0487101A2 (de) 1992-05-27

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