DE69132730T2 - Halbleiteranordnung mit verbesserter Leitungsführung - Google Patents

Halbleiteranordnung mit verbesserter Leitungsführung

Info

Publication number
DE69132730T2
DE69132730T2 DE69132730T DE69132730T DE69132730T2 DE 69132730 T2 DE69132730 T2 DE 69132730T2 DE 69132730 T DE69132730 T DE 69132730T DE 69132730 T DE69132730 T DE 69132730T DE 69132730 T2 DE69132730 T2 DE 69132730T2
Authority
DE
Germany
Prior art keywords
region
semiconductor arrangement
improved wiring
metal wiring
separation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132730T
Other languages
English (en)
Other versions
DE69132730D1 (de
Inventor
Keiji Ishizuka
Yuzo Kataoka
Toshihiko Ichise
Hidekazu Takahashi
Hayao Ohzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69132730D1 publication Critical patent/DE69132730D1/de
Publication of DE69132730T2 publication Critical patent/DE69132730T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69132730T 1990-05-31 1991-05-29 Halbleiteranordnung mit verbesserter Leitungsführung Expired - Fee Related DE69132730T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13962490 1990-05-31
JP13962390 1990-05-31
JP16994790 1990-06-29

Publications (2)

Publication Number Publication Date
DE69132730D1 DE69132730D1 (de) 2001-10-25
DE69132730T2 true DE69132730T2 (de) 2002-07-04

Family

ID=27317906

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132730T Expired - Fee Related DE69132730T2 (de) 1990-05-31 1991-05-29 Halbleiteranordnung mit verbesserter Leitungsführung

Country Status (7)

Country Link
US (2) US5200639A (de)
EP (1) EP0460861B1 (de)
KR (1) KR950007421B1 (de)
AT (1) ATE205963T1 (de)
DE (1) DE69132730T2 (de)
MY (1) MY108878A (de)
SG (1) SG46606A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3305415B2 (ja) * 1992-06-18 2002-07-22 キヤノン株式会社 半導体装置、インクジェットヘッド、および画像形成装置
US5534069A (en) * 1992-07-23 1996-07-09 Canon Kabushiki Kaisha Method of treating active material
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
US5652180A (en) * 1993-06-28 1997-07-29 Kawasaki Steel Corporation Method of manufacturing semiconductor device with contact structure
US6046079A (en) * 1993-08-18 2000-04-04 United Microelectronics Corporation Method for prevention of latch-up of CMOS devices
KR0175000B1 (ko) * 1994-12-14 1999-02-01 윤종용 전자파 억제구조를 갖는 반도체 소자
US6001729A (en) * 1995-01-10 1999-12-14 Kawasaki Steel Corporation Method of forming wiring structure for semiconductor device
JPH08191054A (ja) * 1995-01-10 1996-07-23 Kawasaki Steel Corp 半導体装置及びその製造方法
JPH08255907A (ja) * 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
KR0183729B1 (ko) * 1995-08-18 1999-04-15 김광호 극 박막의 금속층 형성방법 및 이를 이용한 배선 형성방법
JP3381767B2 (ja) * 1997-09-22 2003-03-04 東京エレクトロン株式会社 成膜方法および半導体装置の製造方法
JP3472742B2 (ja) * 2000-03-31 2003-12-02 Necエレクトロニクス株式会社 半導体記憶装置
US6653617B2 (en) 2000-07-03 2003-11-25 Canon Kabushiki Kaisha Photoelectric conversion device
US20020155261A1 (en) * 2001-04-24 2002-10-24 Sung-Hsiung Wang Method for forming interconnect structure with low dielectric constant
US7176129B2 (en) * 2001-11-20 2007-02-13 The Regents Of The University Of California Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications
TW578321B (en) * 2002-10-02 2004-03-01 Topro Technology Inc Complementary metal-oxide semiconductor structure for a battery protection circuit and battery protection circuit therewith
US6815714B1 (en) * 2003-02-20 2004-11-09 National Semiconductor Corporation Conductive structure in a semiconductor material
US6812486B1 (en) 2003-02-20 2004-11-02 National Semiconductor Corporation Conductive structure and method of forming the structure
DE10346312B4 (de) * 2003-10-06 2015-04-09 Infineon Technologies Ag Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen
CN1294647C (zh) * 2003-11-25 2007-01-10 上海华虹Nec电子有限公司 一种降低rfcmos器件噪声的方法
US7002231B2 (en) * 2004-02-02 2006-02-21 Micron Technology, Inc. Barrier regions for image sensors
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
US7920185B2 (en) * 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
EP1724822A3 (de) * 2005-05-17 2007-01-24 Sumco Corporation Halbleitersubstrat und Verfahren zu dessen Herstellung
JP4241856B2 (ja) * 2006-06-29 2009-03-18 三洋電機株式会社 半導体装置および半導体装置の製造方法
US7791170B2 (en) * 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
US7989282B2 (en) 2009-03-26 2011-08-02 International Business Machines Corporation Structure and method for latchup improvement using through wafer via latchup guard ring

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044452A (en) * 1976-10-06 1977-08-30 International Business Machines Corporation Process for making field effect and bipolar transistors on the same semiconductor chip
JPS5779647A (en) * 1980-11-05 1982-05-18 Ricoh Co Ltd Master slice chip
JPS5851537A (ja) * 1981-09-24 1983-03-26 Ricoh Co Ltd マスタスライスチツプ
US4472728A (en) * 1982-02-19 1984-09-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Imaging X-ray spectrometer
JPS594121A (ja) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp 半導体装置
JPS59165455A (ja) * 1983-03-10 1984-09-18 Toshiba Corp 半導体装置
JPS60148147A (ja) * 1984-01-13 1985-08-05 Nec Corp 半導体装置
JPS63116445A (ja) * 1986-11-04 1988-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPS63156373A (ja) * 1986-12-19 1988-06-29 Matsushita Electric Works Ltd フオトダイオ−ドアレイの製法
US4819052A (en) * 1986-12-22 1989-04-04 Texas Instruments Incorporated Merged bipolar/CMOS technology using electrically active trench
JPS63217644A (ja) * 1987-03-06 1988-09-09 Fuji Electric Co Ltd 半導体装置
US4977439A (en) * 1987-04-03 1990-12-11 Esquivel Agerico L Buried multilevel interconnect system
JPS6422045A (en) * 1987-07-17 1989-01-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6437051A (en) * 1987-07-31 1989-02-07 Nec Corp Manufacture of semiconductor device
US5051792A (en) * 1987-10-20 1991-09-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound for compound semiconductors
US4924019A (en) * 1987-12-21 1990-05-08 Cvd Incorporated Synthesis of high purity dimethylaluminum hydride
JPH02185026A (ja) * 1989-01-11 1990-07-19 Nec Corp Al薄膜の選択的形成方法
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
EP0448223B1 (de) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
JPH04346231A (ja) * 1991-05-23 1992-12-02 Canon Inc 半導体装置の製造方法
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material

Also Published As

Publication number Publication date
ATE205963T1 (de) 2001-10-15
EP0460861A2 (de) 1991-12-11
SG46606A1 (en) 1998-02-20
MY108878A (en) 1996-11-30
KR910020872A (ko) 1991-12-20
DE69132730D1 (de) 2001-10-25
US5200639A (en) 1993-04-06
EP0460861A3 (en) 1992-09-02
KR950007421B1 (ko) 1995-07-10
EP0460861B1 (de) 2001-09-19
US5665630A (en) 1997-09-09

Similar Documents

Publication Publication Date Title
DE69132730T2 (de) Halbleiteranordnung mit verbesserter Leitungsführung
DK0554877T3 (da) Fotoelektromotorisk anordning og fremgangsmåde tilfremstilling af samme
JPS5743438A (en) Semiconductor device and manufacture thereof
EP0654819A3 (de) Anordnung zur Wärmeableitung und Verfahren zu deren Herstellung.
EP0242663A3 (de) Lichtempfindliches Bauelement mit einem Linsennetz
EP0459773A3 (en) Semiconductor device and method for producing the same
DE3780856D1 (de) Metallkontakt mit niedrigem widerstand fuer siliziumanordnungen.
ES2108044T3 (es) Dispositivo de emision por campo de catodo frio con autorregulacion de emisor integral.
DE69227050D1 (de) Halbleitersensor mit elektrostatischer Kapazität
ATE159127T1 (de) Diode und halbleiterbauelement mit einer diode
DE3686498D1 (de) Integrierte halbleiterschaltung mit lasttreibereigenschaften.
ATE119016T1 (de) Abduktionskissen.
DE69132491T2 (de) Rauschdämpfendes Element und elektrische Schaltung mit diesem Element
MY108561A (en) Electrode for semiconductor element and semiconductor device having the electrode and process for producing the same.
DE69013646D1 (de) Integrierte Halbleiterschaltungsvorrichtung mit Kontaktierungsflächen am Rande des Halbleiterchips.
ES2060268T3 (es) Elemento semiconductor emisor de electrones.
KR880009450A (ko) 고체촬상 장치
DE69226842D1 (de) Leistungshalbleitervorrichtung mit integraler Fühlstruktur für die Spannung des "An"-Zustandes
ATE137052T1 (de) Optoelektronisches bauelement
JPS57201062A (en) Semiconductor device
IT1195785B (it) Dispositivi a circuiti integrati a smiconduttori
JPS52120776A (en) Semiconductor device
JPS52116073A (en) Hermetic structure in which integrated circuit element is sealed up ai rtightly
IT8921150A0 (it) Circuito di protezione contro le sovratensioni negative sull'alimentazione per circuito integrato comprendente un dispositivo di potenza con relativo circuito di controllo.
DE3878211D1 (de) Befehls- oder meldegeraet mit abdeckhaube fuer die anschlusskontaktfahnen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee