DE69208137D1 - Halbleiterlaservorrichtung mit Selbstüberwachung - Google Patents

Halbleiterlaservorrichtung mit Selbstüberwachung

Info

Publication number
DE69208137D1
DE69208137D1 DE69208137T DE69208137T DE69208137D1 DE 69208137 D1 DE69208137 D1 DE 69208137D1 DE 69208137 T DE69208137 T DE 69208137T DE 69208137 T DE69208137 T DE 69208137T DE 69208137 D1 DE69208137 D1 DE 69208137D1
Authority
DE
Germany
Prior art keywords
monitoring
self
semiconductor laser
laser device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69208137T
Other languages
English (en)
Other versions
DE69208137T2 (de
Inventor
Ghulam Hasnain
Kuochou Tai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69208137D1 publication Critical patent/DE69208137D1/de
Publication of DE69208137T2 publication Critical patent/DE69208137T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
DE69208137T 1991-04-29 1992-04-24 Halbleiterlaservorrichtung mit Selbstüberwachung Expired - Lifetime DE69208137T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/692,746 US5136603A (en) 1991-04-29 1991-04-29 Self-monitoring semiconductor laser device

Publications (2)

Publication Number Publication Date
DE69208137D1 true DE69208137D1 (de) 1996-03-21
DE69208137T2 DE69208137T2 (de) 1996-09-19

Family

ID=24781838

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69208137T Expired - Lifetime DE69208137T2 (de) 1991-04-29 1992-04-24 Halbleiterlaservorrichtung mit Selbstüberwachung

Country Status (4)

Country Link
US (1) US5136603A (de)
EP (1) EP0511787B1 (de)
JP (1) JP2981056B2 (de)
DE (1) DE69208137T2 (de)

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US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
US5212702A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output
US5285466A (en) * 1992-05-20 1994-02-08 Wisconsin Alumni Research Foundation Feedback mechanism for vertical cavity surface emitting lasers
SE501635C2 (sv) * 1993-08-20 1995-04-03 Asea Brown Boveri Förfarande och anordning för utsändande av ljus med integrerad excitationskälla
US5420880A (en) * 1993-10-12 1995-05-30 Wisconsin Alumni Research Foundation Low threshold vertical cavity surface emitting laser
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
US5606572A (en) * 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US5491712A (en) * 1994-10-31 1996-02-13 Lin; Hong Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser
DE4444470A1 (de) * 1994-11-29 1996-05-30 Hertz Inst Heinrich Sender/Empfänger-Anordnung für ein optisches Duplexsystem
JPH08318640A (ja) * 1994-12-19 1996-12-03 Xerox Corp 光バープリントヘッドを備えた無レンズ印刷装置
US5717533A (en) 1995-01-13 1998-02-10 Methode Electronics Inc. Removable optoelectronic module
US6220878B1 (en) 1995-10-04 2001-04-24 Methode Electronics, Inc. Optoelectronic module with grounding means
US5546281A (en) 1995-01-13 1996-08-13 Methode Electronics, Inc. Removable optoelectronic transceiver module with potting box
KR100259490B1 (ko) * 1995-04-28 2000-06-15 윤종용 광검출기 일체형 표면광 레이저와 이를 채용한 광픽업 장치
US5812582A (en) * 1995-10-03 1998-09-22 Methode Electronics, Inc. Vertical cavity surface emitting laser feedback system and method
US5663944A (en) * 1995-12-29 1997-09-02 Samsung Electronics Co., Ltd. Vertical cavity laser light beam monitored by reflection of a half mirror, with application in optical pick-up
US6392256B1 (en) * 1996-02-01 2002-05-21 Cielo Communications, Inc. Closely-spaced VCSEL and photodetector for applications requiring their independent operation
US6001664A (en) * 1996-02-01 1999-12-14 Cielo Communications, Inc. Method for making closely-spaced VCSEL and photodetector on a substrate
US5757829A (en) * 1996-04-29 1998-05-26 Motorola, Inc. Flip chip power monitoring system for vertical cavity surface emitting lasers
US5742630A (en) * 1996-07-01 1998-04-21 Motorola, Inc. VCSEL with integrated pin diode
US5838703A (en) * 1996-09-30 1998-11-17 Motorola, Inc. Semiconductor laser package with power monitoring system and optical element
US5757837A (en) * 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
KR100234340B1 (ko) * 1996-10-29 1999-12-15 윤종용 광출력장치
US5914976A (en) * 1997-01-08 1999-06-22 W. L. Gore & Associates, Inc. VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
US5892786A (en) * 1997-03-26 1999-04-06 The United States Of America As Represented By The Secretary Of The Air Force Output control of vertical microcavity light emitting device
EP0899836A1 (de) * 1997-08-27 1999-03-03 Xerox Corporation Halbleiterlaservorrichtung
CN1089292C (zh) * 1998-03-13 2002-08-21 明石被服兴业株式会社 布制品折痕增强带
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6203333B1 (en) 1998-04-22 2001-03-20 Stratos Lightwave, Inc. High speed interface converter module
US6179627B1 (en) 1998-04-22 2001-01-30 Stratos Lightwave, Inc. High speed interface converter module
US6222202B1 (en) 1998-10-06 2001-04-24 Agilent Technologies, Inc. System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation
GB2346258A (en) 1999-01-30 2000-08-02 Mitel Semiconductor Ab Monitoring the light output of surface emitting lasers
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
JP3928295B2 (ja) 1999-03-16 2007-06-13 富士ゼロックス株式会社 面発光型半導体レーザ
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6220873B1 (en) 1999-08-10 2001-04-24 Stratos Lightwave, Inc. Modified contact traces for interface converter
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
KR100317576B1 (ko) * 1999-11-08 2001-12-24 윤덕용 모니터용 광검출기 일체형 표면광 레이저장치
DE10004398A1 (de) * 2000-02-02 2001-08-16 Infineon Technologies Ag VCSEL mit monolithisch integriertem Photodetektor
GB0021075D0 (en) 2000-08-25 2000-10-11 Univ Brunel Optically powered acutuator system
US20030021327A1 (en) * 2001-07-25 2003-01-30 Murry Stefan J. Semiconductor surface-emitting laser with integrated photodetector
WO2003015138A2 (en) * 2001-08-09 2003-02-20 Amberwave Systems Corporation Optimized buried-channel fets based on sige heterostructures
US6569593B2 (en) * 2001-08-16 2003-05-27 Eastman Kodak Company Oriented polyester imaging element with nacreous pigment
US6782019B2 (en) * 2001-08-16 2004-08-24 Applied Optoelectronics, Inc. VCSEL with heat-spreading layer
KR20040013569A (ko) * 2002-08-07 2004-02-14 삼성전자주식회사 파장 가변형 면방출 반도체 레이저
JP2004306506A (ja) * 2003-04-09 2004-11-04 Canon Inc 複数部品の接合方法、容器と蓋部材の接合方法、及び、超音波溶着装置
TW201017863A (en) * 2008-10-03 2010-05-01 Versitech Ltd Semiconductor color-tunable broadband light sources and full-color microdisplays
US11025033B2 (en) * 2019-05-21 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies

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Publication number Priority date Publication date Assignee Title
JPS5936988A (ja) * 1982-08-26 1984-02-29 Agency Of Ind Science & Technol 垂直発振型半導体レ−ザ
JPH0750807B2 (ja) * 1984-03-28 1995-05-31 東北大学長 接合型半導体発光素子
JP2597975B2 (ja) * 1985-03-26 1997-04-09 株式会社東芝 半導体発光素子及びその製造方法
JPS62143486A (ja) * 1985-12-18 1987-06-26 Toshiba Corp 面発光型発光素子
GB2197122B (en) * 1986-11-03 1990-01-24 Stc Plc Injection laser and monitor photosensor combination
DE3732626A1 (de) * 1987-09-28 1989-04-06 Siemens Ag Photo-lasertransistor
JP2863773B2 (ja) * 1988-12-28 1999-03-03 科学技術振興事業団 面発光型半導体レーザ装置

Also Published As

Publication number Publication date
JPH05136530A (ja) 1993-06-01
JP2981056B2 (ja) 1999-11-22
DE69208137T2 (de) 1996-09-19
EP0511787B1 (de) 1996-02-07
EP0511787A1 (de) 1992-11-04
US5136603A (en) 1992-08-04

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