DE69209630D1 - Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel - Google Patents

Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel

Info

Publication number
DE69209630D1
DE69209630D1 DE69209630T DE69209630T DE69209630D1 DE 69209630 D1 DE69209630 D1 DE 69209630D1 DE 69209630 T DE69209630 T DE 69209630T DE 69209630 T DE69209630 T DE 69209630T DE 69209630 D1 DE69209630 D1 DE 69209630D1
Authority
DE
Germany
Prior art keywords
vapor deposition
electron beam
optical devices
multilayer mirror
beam vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209630T
Other languages
English (en)
Other versions
DE69209630T2 (de
Inventor
Dennis Glenn Deppe
Niloy Kumar Dutta
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69209630D1 publication Critical patent/DE69209630D1/de
Application granted granted Critical
Publication of DE69209630T2 publication Critical patent/DE69209630T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
DE69209630T 1991-12-27 1992-12-04 Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel Expired - Fee Related DE69209630T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/815,311 US5206871A (en) 1991-12-27 1991-12-27 Optical devices with electron-beam evaporated multilayer mirror

Publications (2)

Publication Number Publication Date
DE69209630D1 true DE69209630D1 (de) 1996-05-09
DE69209630T2 DE69209630T2 (de) 1996-08-22

Family

ID=25217423

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209630T Expired - Fee Related DE69209630T2 (de) 1991-12-27 1992-12-04 Optische Vorrichtungen mit einem durch Elektronenstrahlbedampfung hergestellten Mehrfachschichtspiegel

Country Status (8)

Country Link
US (1) US5206871A (de)
EP (1) EP0549167B1 (de)
JP (1) JPH05251819A (de)
KR (1) KR0147857B1 (de)
CA (1) CA2083122C (de)
DE (1) DE69209630T2 (de)
HK (1) HK146096A (de)
TW (1) TW263626B (de)

Families Citing this family (41)

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Publication number Priority date Publication date Assignee Title
US5408105A (en) * 1992-02-19 1995-04-18 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device with mesa
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
US5557626A (en) * 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
JP2891133B2 (ja) * 1994-10-24 1999-05-17 日本電気株式会社 面発光レーザ及び面発光レーザアレイ及び光情報処理装置
US5654228A (en) * 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
JPH0945963A (ja) * 1995-07-31 1997-02-14 Eiko Eng:Kk ＧａＮ系半導体装置
DE69610610T2 (de) * 1995-12-26 2001-05-03 Nippon Telegraph & Telephone Oberflächenemittierender Laser mit vertikalem Resonator und Verfahren zu seiner Herstellung
US6044100A (en) * 1997-12-23 2000-03-28 Lucent Technologies Inc. Lateral injection VCSEL
US6169756B1 (en) 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6208680B1 (en) 1997-12-23 2001-03-27 Lucent Technologies Inc. Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6696307B2 (en) 2000-12-06 2004-02-24 Applied Optoelectronics, Inc. Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays
US6724796B2 (en) * 2000-12-06 2004-04-20 Applied Optoelectronics, Inc. Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control
US6636544B2 (en) 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
EP1298461A1 (de) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Halbleiter Verteilten Bragg-Reflektor mit GaP und Halbleiterbauelement mit einem Resonanzhohlraum und einer solchen VBR
DE10208171A1 (de) * 2002-02-26 2003-09-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
DE10244447B4 (de) * 2002-09-24 2006-06-14 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
US6839507B2 (en) * 2002-10-07 2005-01-04 Applied Materials, Inc. Black reflector plate
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7627017B2 (en) * 2006-08-25 2009-12-01 Stc. Unm Laser amplifier and method of making the same
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
CN110212409A (zh) * 2019-05-31 2019-09-06 度亘激光技术（苏州）有限公司 基于GaAs衬底的分布布拉格反射镜的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1382401A (en) * 1973-02-13 1975-01-29 Inst Poluprovodnikov Solid state laser
US3984581A (en) * 1973-02-28 1976-10-05 Carl Zeiss-Stiftung Method for the production of anti-reflection coatings on optical elements made of transparent organic polymers
JPS6064843A (ja) * 1983-09-19 1985-04-13 株式会社豊田中央研究所 熱線遮蔽積層体
JPS6179280A (ja) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol 面発光型半導体レ−ザ装置及びその製造方法
JPS63245984A (ja) * 1987-04-01 1988-10-13 Seiko Epson Corp 半導体発光素子及びその製造方法
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors

Also Published As

Publication number Publication date
CA2083122A1 (en) 1993-06-28
KR930015234A (ko) 1993-07-24
JPH05251819A (ja) 1993-09-28
US5206871A (en) 1993-04-27
HK146096A (en) 1996-08-09
EP0549167A2 (de) 1993-06-30
TW263626B (de) 1995-11-21
EP0549167B1 (de) 1996-04-03
EP0549167A3 (en) 1993-08-25
KR0147857B1 (ko) 1998-11-02
DE69209630T2 (de) 1996-08-22
CA2083122C (en) 1997-05-13

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee