DE69214423T2 - Verwendung einer Halbleiterstruktur als lichtemittierende Diode - Google Patents

Verwendung einer Halbleiterstruktur als lichtemittierende Diode

Info

Publication number
DE69214423T2
DE69214423T2 DE69214423T DE69214423T DE69214423T2 DE 69214423 T2 DE69214423 T2 DE 69214423T2 DE 69214423 T DE69214423 T DE 69214423T DE 69214423 T DE69214423 T DE 69214423T DE 69214423 T2 DE69214423 T2 DE 69214423T2
Authority
DE
Germany
Prior art keywords
light emitting
emitting diode
semiconductor structure
semiconductor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69214423T
Other languages
English (en)
Other versions
DE69214423D1 (de
Inventor
Alfred Yi Cho
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69214423D1 publication Critical patent/DE69214423D1/de
Publication of DE69214423T2 publication Critical patent/DE69214423T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
DE69214423T 1991-12-27 1992-11-23 Verwendung einer Halbleiterstruktur als lichtemittierende Diode Expired - Fee Related DE69214423T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/815,307 US5226053A (en) 1991-12-27 1991-12-27 Light emitting diode

Publications (2)

Publication Number Publication Date
DE69214423D1 DE69214423D1 (de) 1996-11-14
DE69214423T2 true DE69214423T2 (de) 1997-02-20

Family

ID=25217414

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69214423T Expired - Fee Related DE69214423T2 (de) 1991-12-27 1992-11-23 Verwendung einer Halbleiterstruktur als lichtemittierende Diode

Country Status (7)

Country Link
US (1) US5226053A (de)
EP (1) EP0550963B1 (de)
JP (1) JPH05275739A (de)
KR (1) KR100254302B1 (de)
CA (1) CA2083121C (de)
DE (1) DE69214423T2 (de)
HK (1) HK220496A (de)

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362974A (en) * 1992-06-10 1994-11-08 The Furukawa Electric Co., Ltd. Group II-VI material semiconductor optical device with strained multiquantum barriers
JPH0669585A (ja) * 1992-08-12 1994-03-11 Fujitsu Ltd 面発光半導体レーザ及びその製造方法
JP2797883B2 (ja) * 1993-03-18 1998-09-17 株式会社日立製作所 多色発光素子とその基板
US5345462A (en) * 1993-03-29 1994-09-06 At&T Bell Laboratories Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity
JPH0722646A (ja) * 1993-06-30 1995-01-24 Mitsubishi Chem Corp 電流ブロック層を有するｌｅｄ
US6392341B2 (en) 1993-07-20 2002-05-21 University Of Georgia Research Foundation, Inc. Resonant microcavity display with a light distribution element
US5469018A (en) * 1993-07-20 1995-11-21 University Of Georgia Research Foundation, Inc. Resonant microcavity display
US6614161B1 (en) 1993-07-20 2003-09-02 University Of Georgia Research Foundation, Inc. Resonant microcavity display
US5804919A (en) * 1994-07-20 1998-09-08 University Of Georgia Research Foundation, Inc. Resonant microcavity display
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator
US5363398A (en) * 1993-09-30 1994-11-08 At&T Bell Laboratories Absorption resonant rare earth-doped micro-cavities
JP2846571B2 (ja) * 1994-02-25 1999-01-13 出光興産株式会社 有機エレクトロルミネッセンス素子
JPH07249833A (ja) * 1994-03-10 1995-09-26 Daido Hoxan Inc 発光素子
JP3717196B2 (ja) * 1994-07-19 2005-11-16 豊田合成株式会社 発光素子
US5663822A (en) * 1995-06-14 1997-09-02 Mci Corporation Optical comb generator using optical white noise source
EP0996313A3 (de) * 1995-07-14 2000-08-02 Matsushita Electric Industrial Co., Ltd. Beleuchteter Schalter
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5784396A (en) * 1996-09-17 1998-07-21 Xerox Corporation VCSEL integral feedback assembly two-etch structure
US5925897A (en) * 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same
JPH114020A (ja) * 1997-04-15 1999-01-06 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光装置
EP0875946A1 (de) 1997-04-30 1998-11-04 Interuniversitair Micro-Elektronica Centrum Vzw Lichtemittierende Diode mit Mikrohohlraum und Verfahren zu deren Herstellung
EP0877428A3 (de) * 1997-04-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Bauelement für die Emission von elektromagnetischer Strahlung bei einer vorherbestimmten Wellenlänge und dessen Herstellung
EP1928034A3 (de) 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Lichtemittierende Vorrichtung
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
JP3736181B2 (ja) * 1998-05-13 2006-01-18 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US7253445B2 (en) * 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
EP2315277A3 (de) 1998-07-28 2018-01-10 Philips Lighting Holding B.V. Vorrichtungen zur Ausgabe von Strahlung mit hoher Wirksamkeit
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
JP2001028459A (ja) * 1999-05-13 2001-01-30 Sumitomo Electric Ind Ltd 発光装置およびその製造方法
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
JP3547344B2 (ja) 1999-08-24 2004-07-28 シャープ株式会社 半導体発光素子
JP3586594B2 (ja) * 1999-08-25 2004-11-10 シャープ株式会社 半導体発光素子およびその製造方法
EP1098374B1 (de) * 1999-11-05 2004-09-08 Interuniversitair Micro-Elektronica Centrum Vzw Optisches Filter und Resonanzhohlraum-LED mit diesem Filter
EP1098375A1 (de) * 1999-11-05 2001-05-09 Interuniversitair Micro-Elektronica Centrum Vzw Optisches Filter und Resonanzhohlraum-LED mit diesem Filter
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6903376B2 (en) 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
JP2002083999A (ja) 2000-06-21 2002-03-22 Sharp Corp 半導体発光素子
US6420732B1 (en) 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
DE60143152D1 (de) * 2000-06-29 2010-11-11 Koninkl Philips Electronics Nv Optoelektrisches element
US6614103B1 (en) 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
US6518600B1 (en) 2000-11-17 2003-02-11 General Electric Company Dual encapsulation for an LED
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
EP1243428A1 (de) * 2001-03-20 2002-09-25 The Technology Partnership Public Limited Company LED-Druckkopf für elektrophotographischen Drucker
JP2002280602A (ja) * 2001-03-21 2002-09-27 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール
JP2002299699A (ja) * 2001-03-30 2002-10-11 Sumitomo Electric Ind Ltd 発光装置およびその製造方法
JP4443094B2 (ja) * 2001-05-24 2010-03-31 シャープ株式会社 半導体発光素子
JP2003309283A (ja) * 2002-04-17 2003-10-31 Sharp Corp 半導体発光素子
DE10234124B4 (de) * 2002-07-26 2004-09-09 Siemens Ag Anzeigevorrichtung
US6690697B1 (en) 2002-08-20 2004-02-10 Eastman Kodak Company Vertical cavity light-producing device with improved power conversion
KR100495215B1 (ko) * 2002-12-27 2005-06-14 삼성전기주식회사 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법
TWI226138B (en) * 2003-01-03 2005-01-01 Super Nova Optoelectronics Cor GaN-based LED vertical device structure and the manufacturing method thereof
US20040140758A1 (en) * 2003-01-17 2004-07-22 Eastman Kodak Company Organic light emitting device (OLED) display with improved light emission using a metallic anode
US7042444B2 (en) * 2003-01-17 2006-05-09 Eastman Kodak Company OLED display and touch screen
US6911674B2 (en) * 2003-04-16 2005-06-28 Zeolux Corporation Feedback and coupling structures and methods
US6969874B1 (en) 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7019330B2 (en) * 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
US7102172B2 (en) * 2003-10-09 2006-09-05 Permlight Products, Inc. LED luminaire
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US8227820B2 (en) 2005-02-09 2012-07-24 The Regents Of The University Of California Semiconductor light-emitting device
US20080121917A1 (en) * 2006-11-15 2008-05-29 The Regents Of The University Of California High efficiency white, single or multi-color light emitting diodes (leds) by index matching structures
US7768023B2 (en) 2005-10-14 2010-08-03 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US20100289043A1 (en) * 2006-11-15 2010-11-18 The Regents Of The University Of California High light extraction efficiency light emitting diode (led) through multiple extractors
US7345298B2 (en) * 2005-02-28 2008-03-18 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
US20050274971A1 (en) * 2004-06-10 2005-12-15 Pai-Hsiang Wang Light emitting diode and method of making the same
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
DE102004057802B4 (de) * 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
US7291864B2 (en) * 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
EP1860993B1 (de) 2005-03-01 2019-01-23 Masimo Laboratories, Inc. Nichtinvasiver multiparameter-patientenmonitor
TWM279352U (en) * 2005-05-06 2005-11-01 Lighthouse Technology Co Ltd Photo power supply device capable of being controlled by programs
KR100706958B1 (ko) * 2005-05-26 2007-04-11 삼성전기주식회사 발광소자용 반사기와 그 반사기를 사용한 발광소자 모듈 및그 제조방법
DE102005048408B4 (de) * 2005-06-10 2015-03-19 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterkörper
US20070096127A1 (en) * 2005-08-26 2007-05-03 Pattison P M Semiconductor micro-cavity light emitting diode
US7846391B2 (en) 2006-05-22 2010-12-07 Lumencor, Inc. Bioanalytical instrumentation using a light source subsystem
KR100818451B1 (ko) 2006-07-03 2008-04-01 삼성전기주식회사 편광성을 갖는 반도체 발광 소자
US7642562B2 (en) * 2006-09-29 2010-01-05 Innolume Gmbh Long-wavelength resonant-cavity light-emitting diode
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
WO2008066712A2 (en) * 2006-11-15 2008-06-05 The Regents Of The University Of California High light extraction efficiency light emitting diode (led) with emitters within structured materials
KR100880635B1 (ko) * 2006-11-30 2009-01-30 엘지전자 주식회사 발광 소자
US7642974B2 (en) * 2007-01-26 2010-01-05 Thales Avionics, Inc. Window mounted antenna for a vehicle and a method for using the same
TW200834969A (en) * 2007-02-13 2008-08-16 Epistar Corp Light-emitting diode and method for manufacturing the same
EP2139383B1 (de) 2007-03-27 2013-02-13 Masimo Laboratories, Inc. Optischer sensor mit mehreren wellenlängen
US8374665B2 (en) 2007-04-21 2013-02-12 Cercacor Laboratories, Inc. Tissue profile wellness monitor
US7772749B2 (en) * 2007-05-01 2010-08-10 General Electric Company Wavelength filtering coating for high temperature lamps
US7709811B2 (en) * 2007-07-03 2010-05-04 Conner Arlie R Light emitting diode illumination system
US8098375B2 (en) 2007-08-06 2012-01-17 Lumencor, Inc. Light emitting diode illumination system
US8242462B2 (en) * 2009-01-23 2012-08-14 Lumencor, Inc. Lighting design of high quality biomedical devices
JP2010278355A (ja) * 2009-05-29 2010-12-09 Fujifilm Corp 発光デバイス
KR101706354B1 (ko) 2009-06-24 2017-02-13 삼성전자주식회사 고속 광 변조기 및 이를 이용한 광 변조방법
JP2011054862A (ja) * 2009-09-04 2011-03-17 Hitachi Cable Ltd エピタキシャルウエハ、発光素子、エピタキシャルウエハの製造方法、及び発光素子の製造方法
US9839381B1 (en) 2009-11-24 2017-12-12 Cercacor Laboratories, Inc. Physiological measurement system with automatic wavelength adjustment
GB2487882B (en) 2009-12-04 2017-03-29 Masimo Corp Calibration for multi-stage physiological monitors
US8389957B2 (en) 2011-01-14 2013-03-05 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US8774246B1 (en) 2011-01-14 2014-07-08 University Of Central Florida Research Foundation, Inc. Semiconductor light sources including selective diffusion for optical and electrical confinement
US8466436B2 (en) 2011-01-14 2013-06-18 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US9118162B2 (en) 2011-01-14 2015-08-25 University Of Central Florida Research Foundation, Inc. Composite semiconductor light source pumped by a spontaneous light emitter
JP6056154B2 (ja) 2011-07-21 2017-01-11 富士ゼロックス株式会社 発光素子、発光素子アレイ、光書込みヘッドおよび画像形成装置
US9330911B2 (en) 2011-08-22 2016-05-03 Invenlux Limited Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride
CN102280548A (zh) * 2011-09-05 2011-12-14 厦门乾照光电股份有限公司 发光二极管结构及其制造方法
WO2013067541A1 (en) * 2011-11-04 2013-05-10 Chou Stephen Y Light emitting diodes, fast photo-electron source and photodetectors with scaled nanostructures and nanoscale metallic photonic cavity and antenna, and method of making same
US9103528B2 (en) 2012-01-20 2015-08-11 Lumencor, Inc Solid state continuous white light source
JP5970837B2 (ja) * 2012-02-06 2016-08-17 富士ゼロックス株式会社 半導体発光素子、光源ヘッド、及び画像形成装置
JP5731996B2 (ja) 2012-02-21 2015-06-10 富士フイルム株式会社 半導体発光素子
JP5728411B2 (ja) * 2012-02-21 2015-06-03 富士フイルム株式会社 半導体発光素子
US9217561B2 (en) 2012-06-15 2015-12-22 Lumencor, Inc. Solid state light source for photocuring
US9847444B2 (en) 2012-11-06 2017-12-19 Canon Kabushiki Kaisha Photonic device and optical coherence tomography apparatus including the photonic device as light source
US9147817B2 (en) * 2013-09-17 2015-09-29 Fuji Xerox Co., Ltd. Semiconductor light-emitting element, light source head, and image forming apparatus
WO2015137373A1 (ja) 2014-03-11 2015-09-17 古河電気工業株式会社 半導体装置
US9705283B1 (en) 2014-05-20 2017-07-11 University Of Central Florida Research Foundation, Inc. Diffused channel semiconductor light sources
JP2016039317A (ja) * 2014-08-08 2016-03-22 富士ゼロックス株式会社 半導体発光素子、光源ヘッド、および画像形成装置
JP6325948B2 (ja) * 2014-09-02 2018-05-16 株式会社東芝 半導体発光素子および光結合装置
JP6683003B2 (ja) 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
US10483719B2 (en) 2016-07-13 2019-11-19 University Of Central Florida Research Foundation, Inc. Semiconductor devices with depleted heterojunction current blocking regions
US10033156B2 (en) 2016-07-13 2018-07-24 University Of Central Florida Research Foundation, Inc. Low resistance vertical cavity light source with PNPN blocking
JP6720747B2 (ja) 2016-07-19 2020-07-08 日亜化学工業株式会社 半導体装置、基台及びそれらの製造方法
JP7125720B2 (ja) * 2017-03-28 2022-08-25 東芝マテリアル株式会社 半導体発光素子
US10559630B2 (en) 2017-12-21 2020-02-11 X Development Llc Light emitting devices featuring optical mode enhancement
FR3083002B1 (fr) * 2018-06-20 2020-07-31 Aledia Dispositif optoelectronique comprenant une matrice de diodes
EP3605605A1 (de) 2018-08-01 2020-02-05 MEAS France Optisches sender-empfänger-system, lichtschranke und regensensor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081888A (ja) * 1983-10-12 1985-05-09 Rohm Co Ltd 面発光レ−ザおよびその製造方法
JPS6081887A (ja) * 1983-10-12 1985-05-09 Rohm Co Ltd 面発光レ−ザおよびその製造方法
JPH0740619B2 (ja) * 1985-10-14 1995-05-01 松下電器産業株式会社 半導体レ−ザ装置
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
JPH0266779A (ja) * 1988-08-31 1990-03-06 Pioneer Electron Corp 両面演奏光ディスクプレーヤ
JPH0264285A (ja) * 1988-08-29 1990-03-05 Matsushita Refrig Co Ltd 密閉型回転式冷媒ポンプ
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors
US5089860A (en) * 1990-06-25 1992-02-18 Deppe Dennis G Quantum well device with control of spontaneous photon emission, and method of manufacturing same
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes

Also Published As

Publication number Publication date
KR100254302B1 (ko) 2000-05-01
JPH05275739A (ja) 1993-10-22
HK220496A (en) 1997-01-03
CA2083121C (en) 1997-09-23
DE69214423D1 (de) 1996-11-14
EP0550963A1 (de) 1993-07-14
US5226053A (en) 1993-07-06
EP0550963B1 (de) 1996-10-09
KR930015124A (ko) 1993-07-23
CA2083121A1 (en) 1993-06-28

Similar Documents

Publication Publication Date Title
DE69214423D1 (de) Verwendung einer Halbleiterstruktur als lichtemittierende Diode
DE69331554D1 (de) Lichtemittierende Diode
DE69127677D1 (de) Lichtemittierende Halbleiterdioden
DE69229991T2 (de) Lichtemittierende Diode mit einer dicken transparenten Schicht
DE69432426D1 (de) Verbinden von Schichten einer lichtemittierenden Diode
DE69226848D1 (de) Lichtemittierende Diode mit verästelter Oberflächenelektrode
FR2676393B1 (fr) Imprimante a diodes emettrices de lumiere.
DE69607817T2 (de) Ausrichtung einer Leuchtdiodenanordnung
FR2631102B1 (fr) Lanterne a diodes electroluminescentes
DE69218157D1 (de) Lawinenfotodiode
DE69218474D1 (de) Lawinenfotodiode
EP0776052A4 (de) Organische leuchtdiode mit pn-übergang
DE69215747D1 (de) Halbleiterlaserdiode
DE59105310D1 (de) Infrarotes Licht emittierende Diode.
DE69521024T2 (de) Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode
DE69207069T2 (de) Lichtemittierende Halbleitervorrichtung
KR900003793U (ko) 발광 다이오드 어레이
KR930017411U (ko) 발광다이오드의 고정구조
KR900011056A (ko) 발광다이오드
KR940019666U (ko) 발광다이오드를 이용한 간판
KR920020315U (ko) 발광다이오드를 이용한 표시소자
KR930017414U (ko) 발광다이오드의 고정장치
KR970019785U (ko) 발광다이오드 불빛 조절 구조체
KR880011195U (ko) 발광다이오드 고정장치
KR900014952U (ko) 발광다이오드를 이용한 레벨미터

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee