DE69222229T2 - Zweifarbige Strahlungsdetektoranordnung und Verfahren zu ihrer Herstellung - Google Patents

Zweifarbige Strahlungsdetektoranordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69222229T2
DE69222229T2 DE69222229T DE69222229T DE69222229T2 DE 69222229 T2 DE69222229 T2 DE 69222229T2 DE 69222229 T DE69222229 T DE 69222229T DE 69222229 T DE69222229 T DE 69222229T DE 69222229 T2 DE69222229 T2 DE 69222229T2
Authority
DE
Germany
Prior art keywords
bicolor
production
radiation detector
detector arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69222229T
Other languages
English (en)
Other versions
DE69222229D1 (de
Inventor
Paul R Norton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Publication of DE69222229D1 publication Critical patent/DE69222229D1/de
Application granted granted Critical
Publication of DE69222229T2 publication Critical patent/DE69222229T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14696—The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
DE69222229T 1991-06-12 1992-06-06 Zweifarbige Strahlungsdetektoranordnung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69222229T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/715,086 US5149956A (en) 1991-06-12 1991-06-12 Two-color radiation detector array and methods of fabricating same

Publications (2)

Publication Number Publication Date
DE69222229D1 DE69222229D1 (de) 1997-10-23
DE69222229T2 true DE69222229T2 (de) 1998-01-15

Family

ID=24872628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69222229T Expired - Fee Related DE69222229T2 (de) 1991-06-12 1992-06-06 Zweifarbige Strahlungsdetektoranordnung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US5149956A (de)
EP (1) EP0518243B1 (de)
DE (1) DE69222229T2 (de)
IL (1) IL101822A (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374841A (en) * 1991-12-18 1994-12-20 Texas Instruments Incorporated HgCdTe S-I-S two color infrared detector
EP0635892B1 (de) * 1992-07-21 2002-06-26 Raytheon Company Glühenbeständiger HgCdTe-Photodetektor und Herstellungsverfahren
US5373182A (en) * 1993-01-12 1994-12-13 Santa Barbara Research Center Integrated IR and visible detector
WO1994016298A1 (en) * 1993-01-13 1994-07-21 Ircon, Inc. Two color line scanning pyrometer
US5380669A (en) * 1993-02-08 1995-01-10 Santa Barbara Research Center Method of fabricating a two-color detector using LPE crystal growth
US5457331A (en) * 1993-04-08 1995-10-10 Santa Barbara Research Center Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe
US5567975A (en) * 1994-06-30 1996-10-22 Santa Barbara Research Center Group II-VI radiation detector for simultaneous visible and IR detection
US5559336A (en) * 1994-07-05 1996-09-24 Santa Barbara Research Center Integrated LPE-grown structure for simultaneous detection of infrared radiation in two bands
WO1996010843A1 (en) * 1994-09-30 1996-04-11 The University Of Western Australia Photosensitive semiconductor array
US5581084A (en) * 1995-06-07 1996-12-03 Santa Barbara Research Center Simultaneous two color IR detector having common middle layer metallic contact
US5592124A (en) * 1995-06-26 1997-01-07 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier
US5959339A (en) * 1996-03-19 1999-09-28 Raytheon Company Simultaneous two-wavelength p-n-p-n Infrared detector
US5731621A (en) * 1996-03-19 1998-03-24 Santa Barbara Research Center Three band and four band multispectral structures having two simultaneous signal outputs
US5721429A (en) * 1996-07-23 1998-02-24 Hughes Electronics Self-focusing detector pixel structure having improved sensitivity
FR2756667B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques bispectral
US5751005A (en) * 1996-12-20 1998-05-12 Raytheon Company Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays
US6107618A (en) * 1997-07-14 2000-08-22 California Institute Of Technology Integrated infrared and visible image sensors
KR100253660B1 (ko) * 1997-09-13 2000-04-15 최동환 이색 적외선 검출소자의 구조 및 제조방법
US6198147B1 (en) * 1998-07-06 2001-03-06 Intel Corporation Detecting infrared and visible light
US6034407A (en) * 1998-07-31 2000-03-07 Boeing North American, Inc. Multi-spectral planar photodiode infrared radiation detector pixels
US6147349A (en) * 1998-07-31 2000-11-14 Raytheon Company Method for fabricating a self-focusing detector pixel and an array fabricated in accordance with the method
US6465860B2 (en) 1998-09-01 2002-10-15 Kabushiki Kaisha Toshiba Multi-wavelength semiconductor image sensor and method of manufacturing the same
US6303923B1 (en) * 1998-12-18 2001-10-16 California Institute Of Technology Fabricating a hybrid imaging device having non-destructive sense nodes
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
AU2003217283A1 (en) 2002-02-01 2003-10-08 Board Of Regents, The University Of Texas System A production method for making position-sensitive radiation detector arrays
CA2474450A1 (en) * 2002-02-01 2003-08-07 Board Of Regents, The University Of Texas System Asymmetrically placed cross-coupled scintillation crystals
US6774348B2 (en) * 2002-06-04 2004-08-10 Honeywell International Inc. Method and apparatus for monitoring the power of a multi-wavelength optical signal
EP1782475A1 (de) * 2004-06-10 2007-05-09 BAE Systems PLC Zweifarben-photonendetektor
US7129489B2 (en) * 2004-12-03 2006-10-31 Raytheon Company Method and apparatus providing single bump, multi-color pixel architecture
US8946739B2 (en) * 2005-09-30 2015-02-03 Lateral Research Limited Liability Company Process to fabricate integrated MWIR emitter
US7608823B2 (en) * 2005-10-03 2009-10-27 Teledyne Scientific & Imaging, Llc Multimode focal plane array with electrically isolated commons for independent sub-array biasing
EP1961048B1 (de) * 2005-12-14 2009-07-29 Selex Sensors and Airborne Systems Limited Mehrfarben-photonendetektor
US7592593B2 (en) * 2006-07-26 2009-09-22 Northrop Grumman Corporation Multi-band focal plane array
US7629582B2 (en) * 2006-10-24 2009-12-08 Raytheon Company Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
GB2452992A (en) * 2007-09-24 2009-03-25 Selex Sensors & Airborne Sys Dual band infrared photodetector
US20090201400A1 (en) * 2008-02-08 2009-08-13 Omnivision Technologies, Inc. Backside illuminated image sensor with global shutter and storage capacitor
JP5175136B2 (ja) * 2008-05-22 2013-04-03 株式会社ジャパンディスプレイウェスト 電気光学装置及び電子機器
US7952688B2 (en) * 2008-06-10 2011-05-31 Raytheon Company Multi-waveband sensor system and methods for seeking targets
DE102009012755A1 (de) * 2009-03-12 2010-09-16 Osram Opto Semiconductors Gmbh Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil
US8669588B2 (en) * 2009-07-06 2014-03-11 Raytheon Company Epitaxially-grown position sensitive detector
US8350208B1 (en) 2010-01-21 2013-01-08 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Two-terminal multi-color photodetectors and focal plane arrays
US8441087B2 (en) 2011-07-22 2013-05-14 Raytheon Company Direct readout focal plane array
US10115764B2 (en) 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
US9184194B2 (en) 2011-12-21 2015-11-10 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Multiband photodetector utilizing serially connected unipolar and bipolar devices
US11043603B1 (en) * 2013-03-15 2021-06-22 Hrl Laboratories, Llc Passivation of infrared detectors using oxide layer
US10903261B1 (en) 2013-03-15 2021-01-26 Hrl Laboratories, Llc Triple output, dual-band detector
US10381502B2 (en) 2015-09-09 2019-08-13 Teledyne Scientific & Imaging, Llc Multicolor imaging device using avalanche photodiode

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507674A (en) * 1982-06-07 1985-03-26 Hughes Aircraft Company Backside illuminated blocked impurity band infrared detector
USH101H (en) * 1984-10-01 1986-08-05 The United States Of America As Represented By The Secretary Of The Army Ultraviolet and infrared focal place array
US4956686A (en) * 1986-02-04 1990-09-11 Texas Instruments Incorporated Two color infrared focal plane array
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
DE3710986A1 (de) * 1987-04-01 1988-10-20 Messerschmitt Boelkow Blohm Lichtempfindliche detektorvorrichtung
US4885619A (en) * 1987-08-24 1989-12-05 Santa Barbara Research Center HgCdTe MIS device having a CdTe heterojunction
US4961098A (en) * 1989-07-03 1990-10-02 Santa Barbara Research Center Heterojunction photodiode array
US5001532A (en) * 1989-09-06 1991-03-19 Rockwell International Corporation Impurity band conduction detector having photoluminescent layer
JP2773930B2 (ja) * 1989-10-31 1998-07-09 三菱電機株式会社 光検知装置

Also Published As

Publication number Publication date
IL101822A (en) 1994-10-07
EP0518243B1 (de) 1997-09-17
EP0518243A1 (de) 1992-12-16
DE69222229D1 (de) 1997-10-23
US5149956A (en) 1992-09-22

Similar Documents

Publication Publication Date Title
DE69222229D1 (de) Zweifarbige Strahlungsdetektoranordnung und Verfahren zu ihrer Herstellung
DE69211697D1 (de) Antischmelzsicherungsstruktur und verfahren zu ihrer herstellung
DE69232670D1 (de) Tropfendetektor und Verfahren
ATA902992A (de) Antigeschwulstmittel und verfahren zu ihrer herstellung
DE4390168T1 (de) Photozelle und Verfahren zu deren Herstellung
DE69803438T2 (de) Strahlungsdetektor und verfahren zu seiner herstellung
DE69716546D1 (de) Infrarot-Detektor und Verfahren zu dessen Herstellung
DE3581998D1 (de) Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung.
DE69224965T2 (de) Verbesserte solarzelle und verfahren zu ihrer herstellung
DE69213179D1 (de) Schraubenspindelrotor und Verfahren zu dessen Herstellung
DE69108815D1 (de) Aufnahmeeinrichtung und Verfahren zu ihrer Herstellung.
DE69313024D1 (de) Festkörperbildaufnahmeanordnung und Verfahren zu ihrer Herstellung
DE69306615T2 (de) Verbundwalze und Verfahren zu ihrer Herstellung
DE3887390D1 (de) Lichtschutz-Schirmstruktur und Verfahren zu ihrer Herstellung.
DE69228545D1 (de) Uv-strahlung hartbare zusammensetzungen und verfahren zu ihrer herstellung
ATE220666T1 (de) 4-diphenylmethylpiperidine und verfahren zu ihrer herstellung
DE69421024D1 (de) Pyroelektrischer Infrarotstrahlungsdetektor und Verfahren zu seiner Herstellung
DE69211134D1 (de) Klebstoffe und verfahren zu deren herstellung
DE69124072T2 (de) Supraleitende Schaltung und Verfahren zu ihrer Herstellung
DE3784898D1 (de) Thermische detektoren und verfahren zu ihrer herstellung.
DE69118202D1 (de) Parkettstruktur und verfahren zu ihrer herstellung
DE3884551D1 (de) Radioaktive benzodiazepinderivate und verfahren zu ihrer herstellung.
DE69218944T2 (de) Borkarbid-kupfer cermets und verfahren zu ihrer herstellung
AT399879B (de) Dihydro-pyrimido-thiazin-derivate und verfahren zu ihrer herstellung
DE59206999D1 (de) Oxadimethacryl-Verbindungen und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO. (N.D.GES.D. STAATES DELAWARE), LEXING

8339 Ceased/non-payment of the annual fee