DE69223895D1 - Beseitigung von Banddiskontinuitäten bei Heteroübergängen - Google Patents

Beseitigung von Banddiskontinuitäten bei Heteroübergängen

Info

Publication number
DE69223895D1
DE69223895D1 DE69223895T DE69223895T DE69223895D1 DE 69223895 D1 DE69223895 D1 DE 69223895D1 DE 69223895 T DE69223895 T DE 69223895T DE 69223895 T DE69223895 T DE 69223895T DE 69223895 D1 DE69223895 D1 DE 69223895D1
Authority
DE
Germany
Prior art keywords
heterojunctions
discontinuities
eliminating tape
eliminating
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69223895T
Other languages
English (en)
Other versions
DE69223895T2 (de
Inventor
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69223895D1 publication Critical patent/DE69223895D1/de
Application granted granted Critical
Publication of DE69223895T2 publication Critical patent/DE69223895T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
DE69223895T 1991-10-11 1992-10-01 Beseitigung von Banddiskontinuitäten bei Heteroübergängen Expired - Lifetime DE69223895T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/777,836 US5170407A (en) 1991-10-11 1991-10-11 Elimination of heterojunction band discontinuities

Publications (2)

Publication Number Publication Date
DE69223895D1 true DE69223895D1 (de) 1998-02-12
DE69223895T2 DE69223895T2 (de) 1998-04-30

Family

ID=25111459

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223895T Expired - Lifetime DE69223895T2 (de) 1991-10-11 1992-10-01 Beseitigung von Banddiskontinuitäten bei Heteroübergängen

Country Status (7)

Country Link
US (1) US5170407A (de)
EP (1) EP0536944B1 (de)
JP (1) JP2562264B2 (de)
KR (1) KR0153781B1 (de)
CA (1) CA2076300C (de)
DE (1) DE69223895T2 (de)
HK (1) HK1002739A1 (de)

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JP2961964B2 (ja) * 1991-07-10 1999-10-12 日本電気株式会社 半導体レーザ装置
JP3052552B2 (ja) * 1992-03-31 2000-06-12 株式会社日立製作所 面発光型半導体レーザ
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US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
JPH0770790B2 (ja) * 1992-11-27 1995-07-31 日本電気株式会社 面発光素子
FR2699337B1 (fr) * 1992-12-15 1995-06-09 Deveaud Pledran Benoit Laser a cavite verticale de faible resistivite.
US5379719A (en) * 1993-07-26 1995-01-10 Sandia National Laboratories Method of deposition by molecular beam epitaxy
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
DE19523181A1 (de) * 1994-07-05 1996-01-11 Motorola Inc Verfahren zum P-Dotieren einer Licht emittierenden Vorrichtung
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
US5753545A (en) * 1994-12-01 1998-05-19 Hughes Electronics Corporation Effective constant doping in a graded compositional alloy
US5606185A (en) * 1994-12-01 1997-02-25 Hughes Aircraft Company Parabolically graded base-collector double heterojunction bipolar transistor
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
JP3358770B2 (ja) * 1995-07-10 2002-12-24 科学技術振興事業団 光制御物質及び光制御方法
US5782996A (en) * 1995-08-29 1998-07-21 Philips Electronics North America Corporation Graded compositions of II-VI semiconductors and devices utilizing same
JP2783210B2 (ja) * 1995-09-04 1998-08-06 日本電気株式会社 面発光型ダイオード
JPH10173294A (ja) * 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6301281B1 (en) * 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6563145B1 (en) * 1999-04-19 2003-05-13 Chang Charles E Methods and apparatus for a composite collector double heterojunction bipolar transistor
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6625195B1 (en) * 1999-07-20 2003-09-23 Joseph Reid Henrichs Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6573528B2 (en) * 2000-10-12 2003-06-03 Walter David Braddock Detector diode with internal calibration structure
US6914925B2 (en) * 2001-08-10 2005-07-05 The Furukawa Electric Co., Ltd. Vertical cavity surface emitting semiconductor laser device
US6618413B2 (en) * 2001-12-21 2003-09-09 Xerox Corporation Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
US6850548B2 (en) 2001-12-28 2005-02-01 Finisar Corporation Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
US7459719B2 (en) * 2004-12-17 2008-12-02 Panasonic Corporation Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer
US7177061B2 (en) * 2005-05-31 2007-02-13 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
JP4666217B2 (ja) * 2005-09-30 2011-04-06 信越半導体株式会社 フォトニック結晶の製造方法
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
EP2291708B1 (de) * 2008-05-30 2020-03-04 Opalux Incorporated Abstimmbarer bragg-stapel
JP5572976B2 (ja) 2009-03-26 2014-08-20 サンケン電気株式会社 半導体装置
US8835998B2 (en) * 2009-12-14 2014-09-16 University Of Notre Dame Du Lac Compositionally graded heterojunction semiconductor device and method of making same
JP2012028667A (ja) 2010-07-27 2012-02-09 Toshiba Corp 発光素子
JP2013062354A (ja) * 2011-09-13 2013-04-04 Hamamatsu Photonics Kk 半導体発光素子
DE102011085077B4 (de) * 2011-10-24 2020-12-31 Robert Bosch Gmbh Oberflächenemittierender Halbleiterlaser
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same
US10559705B1 (en) * 2016-05-11 2020-02-11 Solaero Technologies Corp. Multijunction solar cells having a graded-index reflector structure
US9929293B1 (en) * 2017-04-04 2018-03-27 National Technology & Engineering Solutions Of Sandia, Llc Superlattice photodetector having improved carrier mobility
US11586067B2 (en) 2020-11-20 2023-02-21 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having robust pixel via metallization
US11881539B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization
US11880052B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of mirror grounding in LCoS devices
US11908678B2 (en) * 2021-01-14 2024-02-20 Applied Materials, Inc. Method of CMP integration for improved optical uniformity in advanced LCOS back-plane

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US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
US4686550A (en) * 1984-12-04 1987-08-11 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction semiconductor devices having a doping interface dipole
JPH0722216B2 (ja) * 1986-02-27 1995-03-08 オムロン株式会社 半導体レ−ザ
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
JP2646799B2 (ja) * 1989-12-21 1997-08-27 日本電気株式会社 半導体多層膜
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5034958A (en) * 1990-04-19 1991-07-23 Bell Communications Research, Inc. Front-surface emitting diode laser

Also Published As

Publication number Publication date
JP2562264B2 (ja) 1996-12-11
EP0536944A3 (de) 1993-04-28
EP0536944B1 (de) 1998-01-07
HK1002739A1 (en) 1998-09-11
KR0153781B1 (ko) 1998-12-01
KR930009175A (ko) 1993-05-22
EP0536944A2 (de) 1993-04-14
JPH05206588A (ja) 1993-08-13
CA2076300A1 (en) 1993-04-12
CA2076300C (en) 1996-04-30
DE69223895T2 (de) 1998-04-30
US5170407A (en) 1992-12-08

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