DE69227170T2 - Verfahren zur Herstellung von Verbundhalbleitern des P-Typs - Google Patents

Verfahren zur Herstellung von Verbundhalbleitern des P-Typs

Info

Publication number
DE69227170T2
DE69227170T2 DE69227170T DE69227170T DE69227170T2 DE 69227170 T2 DE69227170 T2 DE 69227170T2 DE 69227170 T DE69227170 T DE 69227170T DE 69227170 T DE69227170 T DE 69227170T DE 69227170 T2 DE69227170 T2 DE 69227170T2
Authority
DE
Germany
Prior art keywords
production
type compound
compound semiconductors
semiconductors
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69227170T
Other languages
English (en)
Other versions
DE69227170D1 (de
DE69227170T3 (de
Inventor
Shuji Nakamura
Naruhito Iwasa
Masayuki Senoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27459676&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69227170(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP35704691A external-priority patent/JP2540791B2/ja
Priority claimed from JP3276392A external-priority patent/JPH05198841A/ja
Priority claimed from JP4028092A external-priority patent/JPH05206520A/ja
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Publication of DE69227170D1 publication Critical patent/DE69227170D1/de
Application granted granted Critical
Publication of DE69227170T2 publication Critical patent/DE69227170T2/de
Publication of DE69227170T3 publication Critical patent/DE69227170T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/004—Annealing, incoherent light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE1992627170 1991-11-08 1992-11-05 Verfahren zur Herstellung von Verbundhalbleitern des P-Typs Expired - Lifetime DE69227170T3 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP32135391 1991-11-08
JP321353/91 1991-11-08
JP35704691A JP2540791B2 (ja) 1991-11-08 1991-12-24 ｐ型窒化ガリウム系化合物半導体の製造方法。
JP357046/91 1991-12-24
JP32763/92 1992-01-22
JP3276392A JPH05198841A (ja) 1992-01-22 1992-01-22 窒化ガリウム系化合物半導体のｐ型化方法
JP4028092A JPH05206520A (ja) 1992-01-29 1992-01-29 ｐ型ＩＩ−ＶＩ族化合物半導体の製造方法
JP40280/92 1992-01-29

Publications (3)

Publication Number Publication Date
DE69227170D1 DE69227170D1 (de) 1998-11-05
DE69227170T2 true DE69227170T2 (de) 1999-04-01
DE69227170T3 DE69227170T3 (de) 2004-11-18

Family

ID=27459676

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992627170 Expired - Lifetime DE69227170T3 (de) 1991-11-08 1992-11-05 Verfahren zur Herstellung von Verbundhalbleitern des P-Typs

Country Status (3)

Country Link
US (2) US5306662A (de)
EP (1) EP0541373B2 (de)
DE (1) DE69227170T3 (de)

Families Citing this family (217)

* Cited by examiner, † Cited by third party
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US5468678A (en) 1995-11-21
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