DE69300157T2 - Elektronenquelle mit einer polykristallinen Diamantschicht. - Google Patents

Elektronenquelle mit einer polykristallinen Diamantschicht.

Info

Publication number
DE69300157T2
DE69300157T2 DE69300157T DE69300157T DE69300157T2 DE 69300157 T2 DE69300157 T2 DE 69300157T2 DE 69300157 T DE69300157 T DE 69300157T DE 69300157 T DE69300157 T DE 69300157T DE 69300157 T2 DE69300157 T2 DE 69300157T2
Authority
DE
Germany
Prior art keywords
electron source
polycrystalline diamond
diamond layer
polycrystalline
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69300157T
Other languages
English (en)
Other versions
DE69300157D1 (de
Inventor
Lawrence N Dworsky
James E Jaskie
Robert C Kane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69300157D1 publication Critical patent/DE69300157D1/de
Application granted granted Critical
Publication of DE69300157T2 publication Critical patent/DE69300157T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond
DE69300157T 1992-02-05 1993-02-03 Elektronenquelle mit einer polykristallinen Diamantschicht. Expired - Fee Related DE69300157T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/831,592 US5180951A (en) 1992-02-05 1992-02-05 Electron device electron source including a polycrystalline diamond

Publications (2)

Publication Number Publication Date
DE69300157D1 DE69300157D1 (de) 1995-06-29
DE69300157T2 true DE69300157T2 (de) 1996-01-04

Family

ID=25259421

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69300157T Expired - Fee Related DE69300157T2 (de) 1992-02-05 1993-02-03 Elektronenquelle mit einer polykristallinen Diamantschicht.

Country Status (5)

Country Link
US (1) US5180951A (de)
EP (1) EP0555076B1 (de)
JP (1) JP3063449B2 (de)
DE (1) DE69300157T2 (de)
HK (1) HK1000225A1 (de)

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US5283501A (en) * 1991-07-18 1994-02-01 Motorola, Inc. Electron device employing a low/negative electron affinity electron source
JP3255960B2 (ja) * 1991-09-30 2002-02-12 株式会社神戸製鋼所 冷陰極エミッタ素子
US5399238A (en) * 1991-11-07 1995-03-21 Microelectronics And Computer Technology Corporation Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5679043A (en) 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5763997A (en) 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5548185A (en) * 1992-03-16 1996-08-20 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathode
US5256888A (en) * 1992-05-04 1993-10-26 Motorola, Inc. Transistor device apparatus employing free-space electron emission from a diamond material surface
US5289086A (en) * 1992-05-04 1994-02-22 Motorola, Inc. Electron device employing a diamond film electron source
US5278475A (en) * 1992-06-01 1994-01-11 Motorola, Inc. Cathodoluminescent display apparatus and method for realization using diamond crystallites
US5965971A (en) * 1993-01-19 1999-10-12 Kypwee Display Corporation Edge emitter display device
CA2164294A1 (en) * 1993-06-02 1994-12-08 Nalin Kumar Amorphic diamond film flat field emission cathode
US5463271A (en) * 1993-07-09 1995-10-31 Silicon Video Corp. Structure for enhancing electron emission from carbon-containing cathode
CA2172803A1 (en) * 1993-11-04 1995-05-11 Nalin Kumar Methods for fabricating flat panel display systems and components
US5445550A (en) * 1993-12-22 1995-08-29 Xie; Chenggang Lateral field emitter device and method of manufacturing same
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
US5698328A (en) * 1994-04-06 1997-12-16 The Regents Of The University Of California Diamond thin film electron emitter
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
US6204834B1 (en) 1994-08-17 2001-03-20 Si Diamond Technology, Inc. System and method for achieving uniform screen brightness within a matrix display
US5531880A (en) * 1994-09-13 1996-07-02 Microelectronics And Computer Technology Corporation Method for producing thin, uniform powder phosphor for display screens
FR2726689B1 (fr) * 1994-11-08 1996-11-29 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
US5852341A (en) * 1994-11-14 1998-12-22 Crystallume Diamond film with sharp field emission turn-on
US5592053A (en) * 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device
US5646474A (en) * 1995-03-27 1997-07-08 Wayne State University Boron nitride cold cathode
US5680008A (en) * 1995-04-05 1997-10-21 Advanced Technology Materials, Inc. Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5679895A (en) * 1995-05-01 1997-10-21 Kobe Steel Usa, Inc. Diamond field emission acceleration sensor
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
US5647998A (en) * 1995-06-13 1997-07-15 Advanced Vision Technologies, Inc. Fabrication process for laminar composite lateral field-emission cathode
US5880559A (en) * 1996-06-01 1999-03-09 Smiths Industries Public Limited Company Electrodes and lamps
WO1998044529A1 (en) * 1996-06-25 1998-10-08 Vanderbilt University Microtip vacuum field emitter structures, arrays, and devices, and methods of fabrication
CN1119829C (zh) * 1996-09-17 2003-08-27 浜松光子学株式会社 光电阴极及装备有它的电子管
US5821680A (en) * 1996-10-17 1998-10-13 Sandia Corporation Multi-layer carbon-based coatings for field emission
JP3372848B2 (ja) * 1996-10-31 2003-02-04 キヤノン株式会社 電子放出素子及び画像表示装置及びそれらの製造方法
JP3598184B2 (ja) * 1996-11-07 2004-12-08 浜松ホトニクス株式会社 透過型２次電子面及び電子管
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
DE69817642T2 (de) 1997-03-10 2004-08-05 Sumitomo Electric Industries, Ltd. Elektronen-emittierendes Element, Herstellungsverfahren desselben, und Elektronenvorrichtung
US6064148A (en) * 1997-05-21 2000-05-16 Si Diamond Technology, Inc. Field emission device
US6181055B1 (en) 1998-10-12 2001-01-30 Extreme Devices, Inc. Multilayer carbon-based field emission electron device for high current density applications
US6441550B1 (en) 1998-10-12 2002-08-27 Extreme Devices Inc. Carbon-based field emission electron device for high current density applications
EP1051736B1 (de) * 1998-11-30 2004-09-15 Koninklijke Philips Electronics N.V. Entladungslampe
US6059627A (en) * 1999-03-08 2000-05-09 Motorola, Inc. Method of providing uniform emission current
KR100615103B1 (ko) * 2000-02-16 2006-08-25 풀러린 인터내셔날 코포레이션 나노튜브, 상기 나노튜브를 구비한 전계 방출 음극과 음극선관 및 이들을 형성하기 위한 방법
JP3535871B2 (ja) * 2002-06-13 2004-06-07 キヤノン株式会社 電子放出素子、電子源、画像表示装置及び電子放出素子の製造方法
JP4154356B2 (ja) * 2003-06-11 2008-09-24 キヤノン株式会社 電子放出素子、電子源、画像表示装置及びテレビ
JP3826120B2 (ja) * 2003-07-25 2006-09-27 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
JP4667031B2 (ja) 2004-12-10 2011-04-06 キヤノン株式会社 電子放出素子の製造方法、および該製造方法を用いた、電子源並びに画像表示装置の製造方法
CN101105488B (zh) * 2006-07-14 2011-01-26 鸿富锦精密工业（深圳）有限公司 逸出功的测量方法
JP2009104916A (ja) * 2007-10-24 2009-05-14 Canon Inc 電子放出素子、電子源、画像表示装置および電子放出素子の製造方法
JP2009117203A (ja) * 2007-11-07 2009-05-28 Canon Inc 電子放出素子の製造方法、電子源の製造方法、および、画像表示装置の製造方法
JP2009146751A (ja) * 2007-12-14 2009-07-02 Canon Inc 電子放出素子、電子源、および、画像表示装置
US8933462B2 (en) * 2011-12-21 2015-01-13 Akhan Semiconductor, Inc. Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method
US9671356B2 (en) * 2012-12-27 2017-06-06 National University Corporation Nagoya University Method and device for measuring energy of electrons excited by sunlight

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0275902A (ja) * 1988-09-13 1990-03-15 Seiko Instr Inc ダイヤモンド探針及びその成形方法
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters

Also Published As

Publication number Publication date
DE69300157D1 (de) 1995-06-29
JP3063449B2 (ja) 2000-07-12
EP0555076A1 (de) 1993-08-11
US5180951A (en) 1993-01-19
HK1000225A1 (en) 1998-02-06
EP0555076B1 (de) 1995-05-24
JPH0620591A (ja) 1994-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee