DE69311596T2 - Integrierte CMOS-Schaltung - Google Patents

Integrierte CMOS-Schaltung

Info

Publication number
DE69311596T2
DE69311596T2 DE69311596T DE69311596T DE69311596T2 DE 69311596 T2 DE69311596 T2 DE 69311596T2 DE 69311596 T DE69311596 T DE 69311596T DE 69311596 T DE69311596 T DE 69311596T DE 69311596 T2 DE69311596 T2 DE 69311596T2
Authority
DE
Germany
Prior art keywords
noise
switching
elements
capacitance
routing channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311596T
Other languages
English (en)
Other versions
DE69311596D1 (de
Inventor
Eino Jacobs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69311596D1 publication Critical patent/DE69311596D1/de
Publication of DE69311596T2 publication Critical patent/DE69311596T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
DE69311596T 1992-02-27 1993-02-19 Integrierte CMOS-Schaltung Expired - Fee Related DE69311596T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92200565 1992-02-27

Publications (2)

Publication Number Publication Date
DE69311596D1 DE69311596D1 (de) 1997-07-24
DE69311596T2 true DE69311596T2 (de) 1998-01-02

Family

ID=8210450

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311596T Expired - Fee Related DE69311596T2 (de) 1992-02-27 1993-02-19 Integrierte CMOS-Schaltung

Country Status (8)

Country Link
US (1) US5444288A (de)
EP (1) EP0558133B1 (de)
JP (1) JPH06132481A (de)
KR (1) KR930018718A (de)
CN (1) CN1033116C (de)
AT (1) ATE154726T1 (de)
CA (1) CA2090265A1 (de)
DE (1) DE69311596T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656834A (en) * 1994-09-19 1997-08-12 Philips Electronics North America Corporation IC standard cell designed with embedded capacitors
US5887004A (en) * 1997-03-28 1999-03-23 International Business Machines Corporation Isolated scan paths
DE69840782D1 (de) 1998-01-02 2009-06-04 Cryptography Res Inc Leckresistentes kryptographisches Verfahren und Vorrichtung
US7587044B2 (en) 1998-01-02 2009-09-08 Cryptography Research, Inc. Differential power analysis method and apparatus
WO1999067919A2 (en) 1998-06-03 1999-12-29 Cryptography Research, Inc. Improved des and other cryptographic processes with leak minimization for smartcards and other cryptosystems
EP1092297B1 (de) 1998-07-02 2007-04-25 Cryptography Research Inc. Leckresistente aktualisierung eines indexierten kryptographischen schlüssels
EP1104938A1 (de) * 1999-12-03 2001-06-06 EM Microelectronic-Marin SA Integrierter Niederleistungsschaltkreis mit Entkopplungskapazitäten
KR100351452B1 (ko) * 1999-12-30 2002-09-09 주식회사 하이닉스반도체 디커플링 커패시터 구조를 갖는 반도체소자
JP2002083873A (ja) * 2000-07-14 2002-03-22 Internatl Business Mach Corp <Ibm> 埋め込みデカップリング・キャパシタを有する半導体デバイス
JP3526450B2 (ja) * 2001-10-29 2004-05-17 株式会社東芝 半導体集積回路およびスタンダードセル配置設計方法
JP4205662B2 (ja) * 2004-12-28 2009-01-07 パナソニック株式会社 半導体集積回路の設計方法
US20080043406A1 (en) * 2006-08-16 2008-02-21 Secure Computing Corporation Portable computer security device that includes a clip
US10733352B2 (en) * 2017-11-21 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and layout method for standard cell structures
CN116110882B (zh) * 2023-04-13 2023-09-15 长鑫存储技术有限公司 半导体结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
JPS56103448A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Semiconductor ic device
CA1204511A (en) * 1983-01-28 1986-05-13 Storage Technology Partners Cmos integrated circuit with high frequency power bus arrangement
JPS6030170A (ja) * 1983-07-29 1985-02-15 Hitachi Ltd 高集積読み出し専用メモリ
US4833521A (en) * 1983-12-13 1989-05-23 Fairchild Camera & Instrument Corp. Means for reducing signal propagation losses in very large scale integrated circuits
JPS60233838A (ja) * 1984-05-02 1985-11-20 Toshiba Corp 半導体集積回路装置
JPH079977B2 (ja) * 1987-02-10 1995-02-01 株式会社東芝 半導体集積回路装置
JPH02210849A (ja) * 1989-02-09 1990-08-22 Matsushita Electron Corp 半導体装置

Also Published As

Publication number Publication date
US5444288A (en) 1995-08-22
KR930018718A (ko) 1993-09-22
EP0558133B1 (de) 1997-06-18
CA2090265A1 (en) 1993-08-28
ATE154726T1 (de) 1997-07-15
CN1076549A (zh) 1993-09-22
EP0558133A1 (de) 1993-09-01
JPH06132481A (ja) 1994-05-13
CN1033116C (zh) 1996-10-23
DE69311596D1 (de) 1997-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee