DE69312989D1 - Plasma-CVD-Anlage und entsprechendes Verfahren - Google Patents

Plasma-CVD-Anlage und entsprechendes Verfahren

Info

Publication number
DE69312989D1
DE69312989D1 DE69312989T DE69312989T DE69312989D1 DE 69312989 D1 DE69312989 D1 DE 69312989D1 DE 69312989 T DE69312989 T DE 69312989T DE 69312989 T DE69312989 T DE 69312989T DE 69312989 D1 DE69312989 D1 DE 69312989D1
Authority
DE
Germany
Prior art keywords
plasma cvd
corresponding process
cvd system
plasma
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69312989T
Other languages
English (en)
Other versions
DE69312989T2 (de
Inventor
Hideo Kurokawa
Tsutomu Mitani
Hirokazu Nakaue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69312989D1 publication Critical patent/DE69312989D1/de
Publication of DE69312989T2 publication Critical patent/DE69312989T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
DE69312989T 1992-03-13 1993-03-06 Plasma-CVD-Anlage und entsprechendes Verfahren Expired - Fee Related DE69312989T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5514492 1992-03-13

Publications (2)

Publication Number Publication Date
DE69312989D1 true DE69312989D1 (de) 1997-09-18
DE69312989T2 DE69312989T2 (de) 1997-12-18

Family

ID=12990579

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312989T Expired - Fee Related DE69312989T2 (de) 1992-03-13 1993-03-06 Plasma-CVD-Anlage und entsprechendes Verfahren

Country Status (3)

Country Link
US (1) US5360483A (de)
EP (1) EP0561243B1 (de)
DE (1) DE69312989T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5932302A (en) * 1993-07-20 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating with ultrasonic vibration a carbon coating
JP3175894B2 (ja) * 1994-03-25 2001-06-11 株式会社半導体エネルギー研究所 プラズマ処理装置及びプラズマ処理方法
JP3555797B2 (ja) * 1996-03-11 2004-08-18 富士写真フイルム株式会社 成膜装置および成膜方法
US5643365A (en) * 1996-07-25 1997-07-01 Ceram Optec Industries Inc Method and device for plasma vapor chemical deposition of homogeneous films on large flat surfaces
US5948166A (en) * 1996-11-05 1999-09-07 3M Innovative Properties Company Process and apparatus for depositing a carbon-rich coating on a moving substrate
US5888594A (en) * 1996-11-05 1999-03-30 Minnesota Mining And Manufacturing Company Process for depositing a carbon-rich coating on a moving substrate
CN100500951C (zh) * 2007-02-07 2009-06-17 吉林大学 高速生长金刚石单晶的装置和方法
JP2009256749A (ja) * 2008-04-18 2009-11-05 Osaka Univ 炭素膜の製造法
US8673078B2 (en) * 2008-11-05 2014-03-18 Ulvac, Inc. Take-up vacuum processing apparatus
CN102021576B (zh) * 2010-09-30 2012-06-27 深圳市信诺泰创业投资企业(普通合伙) 一种连续生产挠性覆铜板的方法
US20130059092A1 (en) * 2011-09-07 2013-03-07 Applied Materials, Inc. Method and apparatus for gas distribution and plasma application in a linear deposition chamber
EP2762607B1 (de) * 2013-01-31 2018-07-25 Applied Materials, Inc. Abscheidungsquelle mit einstellbarer Elektrode
US9242865B2 (en) * 2013-03-05 2016-01-26 Lockheed Martin Corporation Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
CN115044885B (zh) * 2022-06-14 2023-02-10 上海征世科技股份有限公司 一种制备高纯度cvd钻石晶片的mpcvd装置及方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642054B2 (de) * 1973-07-25 1981-10-02
US4301765A (en) * 1979-01-10 1981-11-24 Siemens Aktiengesellschaft Apparatus for generating layers on a carrier foil
JPS58111127A (ja) * 1981-12-24 1983-07-02 Ulvac Corp 耐摩耗性磁気記録体の製造法
DE3402971A1 (de) * 1984-01-28 1985-08-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder hochfrequenz-kathodenzerstaeubung
US4647818A (en) * 1984-04-16 1987-03-03 Sfe Technologies Nonthermionic hollow anode gas discharge electron beam source
US4645977A (en) * 1984-08-31 1987-02-24 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond like carbon film
JPS6163917A (ja) * 1984-09-05 1986-04-02 Matsushita Electric Ind Co Ltd 磁気記録媒体及びその製造方法
EP0183254B1 (de) * 1984-11-29 1994-07-13 Matsushita Electric Industrial Co., Ltd. Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff
JPS61210518A (ja) * 1985-03-13 1986-09-18 Matsushita Electric Ind Co Ltd 磁気記録媒体の製造方法
DE3521318A1 (de) * 1985-06-14 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung
DE69005938T2 (de) * 1989-07-31 1994-05-19 Matsushita Electric Ind Co Ltd Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht.
JPH03203317A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd プラズマ処理装置
JPH0525648A (ja) * 1991-07-15 1993-02-02 Matsushita Electric Ind Co Ltd プラズマｃｖｄ成膜方法

Also Published As

Publication number Publication date
DE69312989T2 (de) 1997-12-18
EP0561243A1 (de) 1993-09-22
EP0561243B1 (de) 1997-08-13
US5360483A (en) 1994-11-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee