DE69313716T2 - Gegen Überdruck geschützter kapazitiver Differenzdruckwandler aus Polysilizium und Verfahren zu seiner Herstellung - Google Patents

Gegen Überdruck geschützter kapazitiver Differenzdruckwandler aus Polysilizium und Verfahren zu seiner Herstellung

Info

Publication number
DE69313716T2
DE69313716T2 DE69313716T DE69313716T DE69313716T2 DE 69313716 T2 DE69313716 T2 DE 69313716T2 DE 69313716 T DE69313716 T DE 69313716T DE 69313716 T DE69313716 T DE 69313716T DE 69313716 T2 DE69313716 T2 DE 69313716T2
Authority
DE
Germany
Prior art keywords
polysilicon
production
differential pressure
pressure transducer
protected against
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69313716T
Other languages
English (en)
Other versions
DE69313716D1 (de
Inventor
Clifford D Fung
Kevin H-L Chau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schneider Electric Systems USA Inc
Original Assignee
Foxboro Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxboro Co filed Critical Foxboro Co
Application granted granted Critical
Publication of DE69313716D1 publication Critical patent/DE69313716D1/de
Publication of DE69313716T2 publication Critical patent/DE69313716T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
DE69313716T 1992-05-12 1993-05-09 Gegen Überdruck geschützter kapazitiver Differenzdruckwandler aus Polysilizium und Verfahren zu seiner Herstellung Expired - Fee Related DE69313716T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/881,707 US5323656A (en) 1992-05-12 1992-05-12 Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same

Publications (2)

Publication Number Publication Date
DE69313716D1 DE69313716D1 (de) 1997-10-16
DE69313716T2 true DE69313716T2 (de) 1998-04-09

Family

ID=25379030

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313716T Expired - Fee Related DE69313716T2 (de) 1992-05-12 1993-05-09 Gegen Überdruck geschützter kapazitiver Differenzdruckwandler aus Polysilizium und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (2) US5323656A (de)
EP (1) EP0569899B1 (de)
JP (1) JPH06129933A (de)
CA (1) CA2095783A1 (de)
DE (1) DE69313716T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012102020A1 (de) * 2012-03-09 2013-09-12 Epcos Ag Mikromechanisches Messelement

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US5220838A (en) * 1991-03-28 1993-06-22 The Foxboro Company Overpressure-protected, differential pressure sensor and method of making the same
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DE19610782B4 (de) * 1996-03-19 2004-08-12 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Strukturen
US5936164A (en) * 1997-08-27 1999-08-10 Delco Electronics Corporation All-silicon capacitive pressure sensor
FR2770339B1 (fr) * 1997-10-27 2003-06-13 Commissariat Energie Atomique Structure munie de contacts electriques formes a travers le substrat de cette structure et procede d'obtention d'une telle structure
US6156585A (en) 1998-02-02 2000-12-05 Motorola, Inc. Semiconductor component and method of manufacture
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US6498086B1 (en) 2001-07-26 2002-12-24 Intel Corporation Use of membrane properties to reduce residual stress in an interlayer region
DE10154867A1 (de) 2001-11-08 2003-05-28 Bosch Gmbh Robert Halbleiterbauelement, insbesondere mikromechanischer Drucksensor
US6759265B2 (en) * 2001-12-12 2004-07-06 Robert Bosch Gmbh Method for producing diaphragm sensor unit and diaphragm sensor unit
DE10206464A1 (de) * 2002-02-16 2003-08-28 Micronas Gmbh Verfahren zur Herstellung einer Sensor- oder Aktuatoranordnung sowie Sensor- oder Aktuatoranordnung
US7211873B2 (en) * 2003-09-24 2007-05-01 Denso Corporation Sensor device having thin membrane and method of manufacturing the same
DE10352001A1 (de) * 2003-11-07 2005-06-09 Robert Bosch Gmbh Mikromechanisches Bauelement mit einer Membran und Verfahren zur Herstellung eines solchen Bauelements
US7371601B2 (en) * 2005-05-12 2008-05-13 Delphi Technologies, Inc. Piezoresistive sensing structure
US7813105B2 (en) 2006-06-06 2010-10-12 Adc Tech International Ltd. Multi-layer capacitor
US7360429B1 (en) 2007-01-31 2008-04-22 Brooks Automation, Inc. High sensitivity pressure actuated switch based on MEMS-fabricated silicon diaphragm and having electrically adjustable switch point
US7493822B2 (en) * 2007-07-05 2009-02-24 Honeywell International Inc. Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
ES2414230T5 (es) 2010-12-07 2016-03-08 Vega Grieshaber Kg Celda de medición de presión
US8802473B1 (en) * 2013-03-14 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same
JP6176609B2 (ja) * 2013-08-21 2017-08-09 パナソニックＩｐマネジメント株式会社 半導体物理量センサ
EP3367082A1 (de) 2013-11-06 2018-08-29 Invensense, Inc. Drucksensor
EP2871455B1 (de) 2013-11-06 2020-03-04 Invensense, Inc. Drucksensor
JP6212000B2 (ja) * 2014-07-02 2017-10-11 株式会社東芝 圧力センサ、並びに圧力センサを用いたマイクロフォン、血圧センサ、及びタッチパネル
EP3614115A1 (de) 2015-04-02 2020-02-26 InvenSense, Inc. Drucksensor
EP3106426B1 (de) * 2015-06-19 2019-11-06 Invensense, Inc. Drucksensor
US10598559B2 (en) 2017-06-29 2020-03-24 Rosemount Inc. Pressure sensor assembly
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
US10871407B2 (en) * 2019-04-25 2020-12-22 Measurement Specialties, Inc. Sensor assemblies with multirange construction
CN113785178A (zh) 2019-05-17 2021-12-10 应美盛股份有限公司 气密性改进的压力传感器

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JPH04143627A (ja) * 1990-10-05 1992-05-18 Yamatake Honeywell Co Ltd 静電容量式圧力センサおよびその製造方法
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US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012102020A1 (de) * 2012-03-09 2013-09-12 Epcos Ag Mikromechanisches Messelement

Also Published As

Publication number Publication date
EP0569899B1 (de) 1997-09-10
JPH06129933A (ja) 1994-05-13
DE69313716D1 (de) 1997-10-16
US5344523A (en) 1994-09-06
CA2095783A1 (en) 1993-11-13
US5323656A (en) 1994-06-28
EP0569899A1 (de) 1993-11-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee