DE69320151D1 - Flachen magnetronzerstäubungsanlage - Google Patents
Flachen magnetronzerstäubungsanlageInfo
- Publication number
- DE69320151D1 DE69320151D1 DE69320151T DE69320151T DE69320151D1 DE 69320151 D1 DE69320151 D1 DE 69320151D1 DE 69320151 T DE69320151 T DE 69320151T DE 69320151 T DE69320151 T DE 69320151T DE 69320151 D1 DE69320151 D1 DE 69320151D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetic
- pole piece
- central magnet
- magnets
- lobe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Catching Or Destruction (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Microwave Tubes (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/891,707 US5262028A (en) | 1992-06-01 | 1992-06-01 | Planar magnetron sputtering magnet assembly |
PCT/US1993/004898 WO1993024674A1 (en) | 1992-06-01 | 1993-05-25 | Improved planar magnetron sputtering magnet assembly |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69320151D1 true DE69320151D1 (de) | 1998-09-10 |
DE69320151T2 DE69320151T2 (de) | 1999-01-14 |
Family
ID=25398683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69320151T Expired - Fee Related DE69320151T2 (de) | 1992-06-01 | 1993-05-25 | Flachen magnetronzerstäubungsanlage |
Country Status (9)
Country | Link |
---|---|
US (1) | US5262028A (de) |
EP (1) | EP0600070B1 (de) |
JP (1) | JP3473954B2 (de) |
AT (1) | ATE169349T1 (de) |
AU (1) | AU4388293A (de) |
DE (1) | DE69320151T2 (de) |
DK (1) | DK0600070T3 (de) |
ES (1) | ES2122024T3 (de) |
WO (1) | WO1993024674A1 (de) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5415754A (en) * | 1993-10-22 | 1995-05-16 | Sierra Applied Sciences, Inc. | Method and apparatus for sputtering magnetic target materials |
US5441614A (en) | 1994-11-30 | 1995-08-15 | At&T Corp. | Method and apparatus for planar magnetron sputtering |
US5597459A (en) * | 1995-02-08 | 1997-01-28 | Nobler Technologies, Inc. | Magnetron cathode sputtering method and apparatus |
US5746897A (en) * | 1995-07-10 | 1998-05-05 | Cvc Products, Inc. | High magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition |
US5865970A (en) * | 1996-02-23 | 1999-02-02 | Permag Corporation | Permanent magnet strucure for use in a sputtering magnetron |
DE19622606C2 (de) * | 1996-06-05 | 2002-02-28 | Applied Films Gmbh & Co Kg | Sputterkathode |
US5753092A (en) * | 1996-08-26 | 1998-05-19 | Velocidata, Inc. | Cylindrical carriage sputtering system |
DE19853943B4 (de) | 1997-11-26 | 2006-04-20 | Vapor Technologies, Inc. (Delaware Corporation), Longmont | Katode zur Zerstäubung oder Bogenaufdampfung sowie Vorrichtung zur Beschichtung oder Ionenimplantation mit einer solchen Katode |
US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
US6488824B1 (en) | 1998-11-06 | 2002-12-03 | Raycom Technologies, Inc. | Sputtering apparatus and process for high rate coatings |
US6365010B1 (en) | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
US5980707A (en) * | 1998-12-18 | 1999-11-09 | Sierra Applied Sciences, Inc. | Apparatus and method for a magnetron cathode with moving magnet assembly |
US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
US6497802B2 (en) | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
US6306265B1 (en) | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
US6183614B1 (en) | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
US5997705A (en) * | 1999-04-14 | 1999-12-07 | Vapor Technologies, Inc. | Rectangular filtered arc plasma source |
US6146509A (en) * | 1999-06-11 | 2000-11-14 | Scivac | Inverted field circular magnetron sputtering device |
US6432285B1 (en) | 1999-10-15 | 2002-08-13 | Cierra Photonics, Inc. | Planar magnetron sputtering apparatus |
US6299740B1 (en) | 2000-01-19 | 2001-10-09 | Veeco Instrument, Inc. | Sputtering assembly and target therefor |
US6632563B1 (en) | 2000-09-07 | 2003-10-14 | Front Edge Technology, Inc. | Thin film battery and method of manufacture |
US7056620B2 (en) * | 2000-09-07 | 2006-06-06 | Front Edge Technology, Inc. | Thin film battery and method of manufacture |
US6372098B1 (en) | 2000-09-28 | 2002-04-16 | The Boc Group, Inc. | High target utilization magnet array and associated methods |
US6863699B1 (en) * | 2000-11-03 | 2005-03-08 | Front Edge Technology, Inc. | Sputter deposition of lithium phosphorous oxynitride material |
US20030209431A1 (en) * | 2001-04-10 | 2003-11-13 | Brown Jeffrey T. | Magnetron sputtering source with improved target utilization and deposition rate |
TWI229138B (en) * | 2001-06-12 | 2005-03-11 | Unaxis Balzers Ag | Magnetron-sputtering source |
US6495009B1 (en) * | 2001-08-07 | 2002-12-17 | Applied Materials, Inc. | Auxiliary in-plane magnet inside a nested unbalanced magnetron |
JP3611324B2 (ja) * | 2002-06-03 | 2005-01-19 | 信越化学工業株式会社 | マグネトロンプラズマ用磁場発生装置 |
US6740212B2 (en) * | 2002-10-18 | 2004-05-25 | Qi Hua Fan | Rectangular magnetron sputtering cathode with high target utilization |
US6835048B2 (en) * | 2002-12-18 | 2004-12-28 | Varian, Inc. | Ion pump having secondary magnetic field |
KR100547833B1 (ko) * | 2003-07-03 | 2006-01-31 | 삼성전자주식회사 | 단위 플라즈마 소스 및 이를 이용한 플라즈마 발생 장치 |
US7513982B2 (en) * | 2004-01-07 | 2009-04-07 | Applied Materials, Inc. | Two dimensional magnetron scanning for flat panel sputtering |
US20060049040A1 (en) * | 2004-01-07 | 2006-03-09 | Applied Materials, Inc. | Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels |
US8500975B2 (en) * | 2004-01-07 | 2013-08-06 | Applied Materials, Inc. | Method and apparatus for sputtering onto large flat panels |
US7087145B1 (en) | 2005-03-10 | 2006-08-08 | Robert Choquette | Sputtering cathode assembly |
US8679674B2 (en) | 2005-03-25 | 2014-03-25 | Front Edge Technology, Inc. | Battery with protective packaging |
US7846579B2 (en) | 2005-03-25 | 2010-12-07 | Victor Krasnov | Thin film battery with protective packaging |
US8470141B1 (en) * | 2005-04-29 | 2013-06-25 | Angstrom Sciences, Inc. | High power cathode |
US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
WO2006131128A1 (de) * | 2005-06-04 | 2006-12-14 | Applied Materials Gmbh & Co. Kg | Sputter-magnetron |
JP2007092136A (ja) | 2005-09-29 | 2007-04-12 | Shin Meiwa Ind Co Ltd | マグネトロンスパッタリング用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置 |
US7498587B2 (en) * | 2006-05-01 | 2009-03-03 | Vapor Technologies, Inc. | Bi-directional filtered arc plasma source |
RU2448388C2 (ru) * | 2006-05-16 | 2012-04-20 | Эрликон Трейдинг Аг, Трюббах | Электродуговой источник и магнитное приспособление |
EP1863068B1 (de) * | 2006-06-01 | 2008-08-13 | VARIAN S.p.A. | Magnetanordnung für eine Sputter-Ionenpumpe |
US8236152B2 (en) * | 2006-11-24 | 2012-08-07 | Ascentool International Ltd. | Deposition system |
JP5217051B2 (ja) * | 2006-11-27 | 2013-06-19 | オムロン株式会社 | 薄膜製造方法 |
US7862927B2 (en) | 2007-03-02 | 2011-01-04 | Front Edge Technology | Thin film battery and manufacturing method |
US8870974B2 (en) | 2008-02-18 | 2014-10-28 | Front Edge Technology, Inc. | Thin film battery fabrication using laser shaping |
US7862627B2 (en) | 2007-04-27 | 2011-01-04 | Front Edge Technology, Inc. | Thin film battery substrate cutting and fabrication process |
US8628645B2 (en) | 2007-09-04 | 2014-01-14 | Front Edge Technology, Inc. | Manufacturing method for thin film battery |
JP4526582B2 (ja) * | 2007-11-30 | 2010-08-18 | パナソニック株式会社 | スパッタリング装置およびスパッタリング方法 |
US8016982B2 (en) * | 2007-11-30 | 2011-09-13 | Panasonic Corporation | Sputtering apparatus and sputtering method |
US10043642B2 (en) * | 2008-02-01 | 2018-08-07 | Oerlikon Surface Solutions Ag, Pfäffikon | Magnetron sputtering source and arrangement with adjustable secondary magnet arrangement |
WO2010021613A1 (en) * | 2008-08-20 | 2010-02-25 | Ascentool, Inc. | Deposition system |
KR101094995B1 (ko) | 2009-08-25 | 2011-12-19 | 금오공과대학교 산학협력단 | 스퍼터링 장치 |
US8502494B2 (en) | 2009-08-28 | 2013-08-06 | Front Edge Technology, Inc. | Battery charging apparatus and method |
WO2012035603A1 (ja) * | 2010-09-13 | 2012-03-22 | 株式会社シンクロン | 磁場発生装置、マグネトロンカソード及びスパッタ装置 |
CN103562433B (zh) * | 2011-05-30 | 2016-05-04 | 日立金属株式会社 | 跑道形状的磁控溅射用磁场产生装置 |
US8865340B2 (en) | 2011-10-20 | 2014-10-21 | Front Edge Technology Inc. | Thin film battery packaging formed by localized heating |
US9887429B2 (en) | 2011-12-21 | 2018-02-06 | Front Edge Technology Inc. | Laminated lithium battery |
US8864954B2 (en) | 2011-12-23 | 2014-10-21 | Front Edge Technology Inc. | Sputtering lithium-containing material with multiple targets |
US9257695B2 (en) | 2012-03-29 | 2016-02-09 | Front Edge Technology, Inc. | Localized heat treatment of battery component films |
US9077000B2 (en) | 2012-03-29 | 2015-07-07 | Front Edge Technology, Inc. | Thin film battery and localized heat treatment |
WO2014010148A1 (ja) * | 2012-07-11 | 2014-01-16 | キヤノンアネルバ株式会社 | スパッタリング装置および磁石ユニット |
US9159964B2 (en) | 2012-09-25 | 2015-10-13 | Front Edge Technology, Inc. | Solid state battery having mismatched battery cells |
US8753724B2 (en) | 2012-09-26 | 2014-06-17 | Front Edge Technology Inc. | Plasma deposition on a partially formed battery through a mesh screen |
US9356320B2 (en) | 2012-10-15 | 2016-05-31 | Front Edge Technology Inc. | Lithium battery having low leakage anode |
JP2015017304A (ja) * | 2013-07-11 | 2015-01-29 | ソニー株式会社 | 磁界発生装置、及びスパッタリング装置 |
TWI527924B (zh) * | 2014-02-12 | 2016-04-01 | 兆陽真空動力股份有限公司 | 電磁控濺鍍陰極 |
US9968016B2 (en) * | 2014-08-11 | 2018-05-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Magnetic field shield |
US10008739B2 (en) | 2015-02-23 | 2018-06-26 | Front Edge Technology, Inc. | Solid-state lithium battery with electrolyte |
WO2016148058A1 (ja) * | 2015-03-19 | 2016-09-22 | 日立金属株式会社 | マグネトロンスパッタリング用磁場発生装置 |
DE102016116568A1 (de) | 2016-09-05 | 2018-03-08 | Von Ardenne Gmbh | Sputtervorrichtung und -verfahren |
US20190043701A1 (en) * | 2017-08-02 | 2019-02-07 | HIA, Inc. | Inverted magnetron for processing of thin film materials |
EP3721466B1 (de) * | 2017-12-05 | 2023-06-07 | Oerlikon Surface Solutions AG, Pfäffikon | Magnetron-sputterquelle und beschichtungsanlage |
GB201817176D0 (en) * | 2018-10-22 | 2018-12-05 | Univ Sheffield | Apparatus and methods for targeted drug delivery |
CN113755808A (zh) * | 2021-09-28 | 2021-12-07 | 北海惠科半导体科技有限公司 | 磁控溅射装置及其控制方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3878085A (en) * | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
US4180450A (en) * | 1978-08-21 | 1979-12-25 | Vac-Tec Systems, Inc. | Planar magnetron sputtering device |
US4265729A (en) * | 1978-09-27 | 1981-05-05 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device |
US4162954A (en) * | 1978-08-21 | 1979-07-31 | Vac-Tec Systems, Inc. | Planar magnetron sputtering device |
US4198283A (en) * | 1978-11-06 | 1980-04-15 | Materials Research Corporation | Magnetron sputtering target and cathode assembly |
HU179482B (en) * | 1979-02-19 | 1982-10-28 | Mikroelektronikai Valalat | Penning pulverizel source |
US4312731A (en) * | 1979-04-24 | 1982-01-26 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device and method |
US4239611A (en) * | 1979-06-11 | 1980-12-16 | Vac-Tec Systems, Inc. | Magnetron sputtering devices |
US4461688A (en) * | 1980-06-23 | 1984-07-24 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method |
CH648690A5 (de) * | 1980-10-14 | 1985-03-29 | Balzers Hochvakuum | Kathodenanordnung zur abstaeubung von material von einem target in einer kathodenzerstaeubungsanlage. |
US4356073A (en) * | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
US4404077A (en) * | 1981-04-07 | 1983-09-13 | Fournier Paul R | Integrated sputtering apparatus and method |
US4434037A (en) * | 1981-07-16 | 1984-02-28 | Ampex Corporation | High rate sputtering system and method |
US4444643A (en) * | 1982-09-03 | 1984-04-24 | Gartek Systems, Inc. | Planar magnetron sputtering device |
DE3480145D1 (en) * | 1983-12-05 | 1989-11-16 | Leybold Ag | Magnetron cathode for the sputtering of ferromagnetic targets |
JPS6260866A (ja) * | 1985-08-02 | 1987-03-17 | Fujitsu Ltd | マグネトロンスパツタ装置 |
DE3727901A1 (de) * | 1987-08-21 | 1989-03-02 | Leybold Ag | Zerstaeubungskathode nach dem magnetronprinzip |
US4892633A (en) * | 1988-11-14 | 1990-01-09 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
-
1992
- 1992-06-01 US US07/891,707 patent/US5262028A/en not_active Expired - Lifetime
-
1993
- 1993-05-25 ES ES93914096T patent/ES2122024T3/es not_active Expired - Lifetime
- 1993-05-25 DK DK93914096T patent/DK0600070T3/da active
- 1993-05-25 JP JP50068294A patent/JP3473954B2/ja not_active Expired - Lifetime
- 1993-05-25 AU AU43882/93A patent/AU4388293A/en not_active Abandoned
- 1993-05-25 EP EP93914096A patent/EP0600070B1/de not_active Expired - Lifetime
- 1993-05-25 DE DE69320151T patent/DE69320151T2/de not_active Expired - Fee Related
- 1993-05-25 WO PCT/US1993/004898 patent/WO1993024674A1/en active IP Right Grant
- 1993-05-25 AT AT93914096T patent/ATE169349T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
ES2122024T3 (es) | 1998-12-16 |
EP0600070B1 (de) | 1998-08-05 |
AU4388293A (en) | 1993-12-30 |
DE69320151T2 (de) | 1999-01-14 |
US5262028A (en) | 1993-11-16 |
DK0600070T3 (da) | 1999-05-10 |
WO1993024674A1 (en) | 1993-12-09 |
EP0600070A4 (de) | 1994-10-26 |
ATE169349T1 (de) | 1998-08-15 |
EP0600070A1 (de) | 1994-06-08 |
JPH07507360A (ja) | 1995-08-10 |
JP3473954B2 (ja) | 2003-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |