DE69321049D1 - Halbleiteranordnung mit Seitenwand-Gate und Verfahren zur Herstellung - Google Patents

Halbleiteranordnung mit Seitenwand-Gate und Verfahren zur Herstellung

Info

Publication number
DE69321049D1
DE69321049D1 DE69321049T DE69321049T DE69321049D1 DE 69321049 D1 DE69321049 D1 DE 69321049D1 DE 69321049 T DE69321049 T DE 69321049T DE 69321049 T DE69321049 T DE 69321049T DE 69321049 D1 DE69321049 D1 DE 69321049D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
gate semiconductor
sidewall gate
sidewall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69321049T
Other languages
English (en)
Inventor
Kent J Cooper
Howard C Kirsch
Scott S Roth
James D Hyaden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69321049D1 publication Critical patent/DE69321049D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
DE69321049T 1992-06-22 1993-04-15 Halbleiteranordnung mit Seitenwand-Gate und Verfahren zur Herstellung Expired - Lifetime DE69321049D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/902,216 US5308997A (en) 1992-06-22 1992-06-22 Self-aligned thin film transistor

Publications (1)

Publication Number Publication Date
DE69321049D1 true DE69321049D1 (de) 1998-10-22

Family

ID=25415505

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321049T Expired - Lifetime DE69321049D1 (de) 1992-06-22 1993-04-15 Halbleiteranordnung mit Seitenwand-Gate und Verfahren zur Herstellung

Country Status (5)

Country Link
US (2) US5308997A (de)
EP (1) EP0578926B1 (de)
JP (1) JPH0661492A (de)
KR (1) KR100275839B1 (de)
DE (1) DE69321049D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557126A (en) * 1994-09-30 1996-09-17 Sgs-Thomson Microelectronics, Inc. Thin-film transistor and method for forming the same
US5700727A (en) * 1995-07-24 1997-12-23 Micron Technology, Inc. Method of forming a thin film transistor
KR100214074B1 (ko) * 1995-11-03 1999-08-02 김영환 박막트랜지스터 및 그 제조방법
US5683930A (en) * 1995-12-06 1997-11-04 Micron Technology Inc. SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of making
US5683918A (en) * 1996-04-01 1997-11-04 Motorola, Inc. Method of making semiconductor-on-insulator device with closed-gate electrode
JP2001313390A (ja) * 2000-02-29 2001-11-09 Agere Systems Inc 半導体材料における選択的レーザ・アニール

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533934A (en) * 1980-10-02 1985-08-06 Westinghouse Electric Corp. Device structures for high density integrated circuits
JPS6048107B2 (ja) * 1980-10-03 1985-10-25 日本電気株式会社 Ｃｍｏｓ型半導体装置
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
US4554572A (en) * 1983-06-17 1985-11-19 Texas Instruments Incorporated Self-aligned stacked CMOS
JPS6074660A (ja) * 1983-09-30 1985-04-26 Nec Corp ３次元論理回路
JPS61125174A (ja) * 1984-11-22 1986-06-12 Agency Of Ind Science & Technol 半導体装置
JPS63102355A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd 相補型電界効果トランジスタ装置
JPH0797625B2 (ja) * 1986-11-19 1995-10-18 三菱電機株式会社 半導体記憶装置
JPH088357B2 (ja) * 1986-12-01 1996-01-29 三菱電機株式会社 縦型ｍｏｓトランジスタ
JPS63314870A (ja) * 1987-06-17 1988-12-22 Nec Corp 絶縁ゲ−ト電界効果トランジスタおよびその製造方法
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
JPH01151268A (ja) * 1987-12-08 1989-06-14 Mitsubishi Electric Corp 半導体装置の製造方法
US4918510A (en) * 1988-10-31 1990-04-17 Motorola, Inc. Compact CMOS device structure
US5115289A (en) * 1988-11-21 1992-05-19 Hitachi, Ltd. Semiconductor device and semiconductor memory device
JPH03187272A (ja) * 1989-12-15 1991-08-15 Mitsubishi Electric Corp Ｍｏｓ型電界効果トランジスタ及びその製造方法
US5177027A (en) * 1990-08-17 1993-01-05 Micron Technology, Inc. Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path
US5140388A (en) * 1991-03-22 1992-08-18 Hewlett-Packard Company Vertical metal-oxide semiconductor devices
US5219772A (en) * 1991-08-15 1993-06-15 At&T Bell Laboratories Method for making field effect devices with ultra-short gates

Also Published As

Publication number Publication date
US5308997A (en) 1994-05-03
EP0578926B1 (de) 1998-09-16
EP0578926A1 (de) 1994-01-19
JPH0661492A (ja) 1994-03-04
US5374573A (en) 1994-12-20
KR940001459A (ko) 1994-01-11
KR100275839B1 (ko) 2001-01-15

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Legal Events

Date Code Title Description
8332 No legal effect for de