DE69321966T2 - Leistungs-Halbleiterbauelement - Google Patents
Leistungs-HalbleiterbauelementInfo
- Publication number
- DE69321966T2 DE69321966T2 DE69321966T DE69321966T DE69321966T2 DE 69321966 T2 DE69321966 T2 DE 69321966T2 DE 69321966 T DE69321966 T DE 69321966T DE 69321966 T DE69321966 T DE 69321966T DE 69321966 T2 DE69321966 T2 DE 69321966T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- power semiconductor
- power
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48724—Aluminium (Al) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP93830524A EP0660402B1 (de) | 1993-12-24 | 1993-12-24 | Leistungs-Halbleiterbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69321966D1 DE69321966D1 (de) | 1998-12-10 |
DE69321966T2 true DE69321966T2 (de) | 1999-06-02 |
Family
ID=8215287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69321966T Expired - Fee Related DE69321966T2 (de) | 1993-12-24 | 1993-12-24 | Leistungs-Halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (2) | US5592026A (de) |
EP (1) | EP0660402B1 (de) |
JP (1) | JP2552100B2 (de) |
DE (1) | DE69321966T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Cons Ric Microelettronica | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
DE69505348T2 (de) * | 1995-02-21 | 1999-03-11 | St Microelectronics Srl | Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung |
JPH10107061A (ja) * | 1996-10-02 | 1998-04-24 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
JP3466064B2 (ja) * | 1997-10-20 | 2003-11-10 | ローム株式会社 | 半導体集積回路装置 |
US6521011B1 (en) * | 1999-07-15 | 2003-02-18 | 3M Innovative Properties Company | Self-supporting pleated filter and method of making same |
US6413863B1 (en) | 2000-01-24 | 2002-07-02 | Taiwan Semiconductor Manufacturing Company | Method to resolve the passivation surface roughness during formation of the AlCu pad for the copper process |
US6380087B1 (en) | 2000-06-19 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | CMP process utilizing dummy plugs in damascene process |
US6861343B2 (en) * | 2002-10-09 | 2005-03-01 | Chok J. Chia | Buffer metal layer |
JP4973463B2 (ja) * | 2007-11-16 | 2012-07-11 | トヨタ自動車株式会社 | 半導体装置 |
CN103229286B (zh) | 2010-11-29 | 2015-12-16 | 丰田自动车株式会社 | 半导体装置 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL136562C (de) * | 1963-10-24 | |||
GB1226080A (de) * | 1967-11-28 | 1971-03-24 | ||
US3667008A (en) * | 1970-10-29 | 1972-05-30 | Rca Corp | Semiconductor device employing two-metal contact and polycrystalline isolation means |
US3831067A (en) * | 1972-05-15 | 1974-08-20 | Int Rectifier Corp | Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring |
US4017886A (en) * | 1972-10-18 | 1977-04-12 | Hitachi, Ltd. | Discrete semiconductor device having polymer resin as insulator and method for making the same |
US4015278A (en) * | 1974-11-26 | 1977-03-29 | Fujitsu Ltd. | Field effect semiconductor device |
US4008486A (en) * | 1975-06-02 | 1977-02-15 | International Rectifier Corporation | Compression-assembled semiconductor device with nesting circular flanges and flexible locating ring |
US4070690A (en) * | 1976-08-17 | 1978-01-24 | Westinghouse Electric Corporation | VMOS transistor |
US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
US4236171A (en) * | 1978-07-17 | 1980-11-25 | International Rectifier Corporation | High power transistor having emitter pattern with symmetric lead connection pads |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
DK157272C (da) * | 1978-10-13 | 1990-04-30 | Int Rectifier Corp | Mosfet med hoej effekt |
US4329642A (en) * | 1979-03-09 | 1982-05-11 | Siliconix, Incorporated | Carrier and test socket for leadless integrated circuit |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
US4305087A (en) * | 1979-06-29 | 1981-12-08 | International Rectifier Corporation | Stud-mounted pressure assembled semiconductor device |
US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
US4399449A (en) * | 1980-11-17 | 1983-08-16 | International Rectifier Corporation | Composite metal and polysilicon field plate structure for high voltage semiconductor devices |
US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
US4414560A (en) * | 1980-11-17 | 1983-11-08 | International Rectifier Corporation | Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region |
US4642419A (en) * | 1981-04-06 | 1987-02-10 | International Rectifier Corporation | Four-leaded dual in-line package module for semiconductor devices |
US4574208A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Raised split gate EFET and circuitry |
FR2531572A1 (fr) * | 1982-08-09 | 1984-02-10 | Radiotechnique Compelec | Dispositif mos a structure plane multicellulaire |
US4641418A (en) * | 1982-08-30 | 1987-02-10 | International Rectifier Corporation | Molding process for semiconductor devices and lead frame structure therefor |
US4556896A (en) * | 1982-08-30 | 1985-12-03 | International Rectifier Corporation | Lead frame structure |
US4965173A (en) * | 1982-12-08 | 1990-10-23 | International Rectifier Corporation | Metallizing process and structure for semiconductor devices |
US4638553A (en) * | 1982-12-08 | 1987-01-27 | International Rectifier Corporation | Method of manufacture of semiconductor device |
US4878099A (en) * | 1982-12-08 | 1989-10-31 | International Rectifier Corporation | Metallizing system for semiconductor wafers |
US4789882A (en) * | 1983-03-21 | 1988-12-06 | International Rectifier Corporation | High power MOSFET with direct connection from connection pads to underlying silicon |
US4639762A (en) * | 1984-04-30 | 1987-01-27 | Rca Corporation | MOSFET with reduced bipolar effects |
US4663820A (en) * | 1984-06-11 | 1987-05-12 | International Rectifier Corporation | Metallizing process for semiconductor devices |
US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
US4723197A (en) * | 1985-12-16 | 1988-02-02 | National Semiconductor Corporation | Bonding pad interconnection structure |
US4853762A (en) * | 1986-03-27 | 1989-08-01 | International Rectifier Corporation | Semi-conductor modules |
US4794431A (en) * | 1986-04-21 | 1988-12-27 | International Rectifier Corporation | Package for photoactivated semiconductor device |
US4845545A (en) * | 1987-02-13 | 1989-07-04 | International Rectifier Corporation | Low profile semiconductor package |
FR2616966B1 (fr) * | 1987-06-22 | 1989-10-27 | Thomson Semiconducteurs | Structure de transistors mos de puissance |
JP2771172B2 (ja) * | 1988-04-01 | 1998-07-02 | 日本電気株式会社 | 縦型電界効果トランジスタ |
US4881106A (en) * | 1988-05-23 | 1989-11-14 | Ixys Corporation | DV/DT of power MOSFETS |
JPH0680818B2 (ja) * | 1989-10-02 | 1994-10-12 | 株式会社東芝 | 電力用圧接型半導体装置 |
EP0433650B1 (de) * | 1989-11-17 | 1998-03-04 | Kabushiki Kaisha Toshiba | Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur |
JPH03254137A (ja) * | 1990-03-05 | 1991-11-13 | Toshiba Corp | 半導体集積回路装置 |
US5047833A (en) * | 1990-10-17 | 1991-09-10 | International Rectifier Corporation | Solderable front metal contact for MOS devices |
US5153507A (en) * | 1990-11-16 | 1992-10-06 | Vlsi Technology, Inc. | Multi-purpose bond pad test die |
DE69109468T2 (de) * | 1991-05-23 | 1995-12-14 | Sgs Thomson Microelectronics | Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren. |
JP2550248B2 (ja) * | 1991-10-14 | 1996-11-06 | 株式会社東芝 | 半導体集積回路装置およびその製造方法 |
JP3185292B2 (ja) * | 1991-12-12 | 2001-07-09 | 関西日本電気株式会社 | 半導体装置 |
-
1993
- 1993-12-24 EP EP93830524A patent/EP0660402B1/de not_active Expired - Lifetime
- 1993-12-24 DE DE69321966T patent/DE69321966T2/de not_active Expired - Fee Related
-
1994
- 1994-12-21 US US08/361,801 patent/US5592026A/en not_active Expired - Lifetime
- 1994-12-22 JP JP6320473A patent/JP2552100B2/ja not_active Expired - Fee Related
-
1995
- 1995-06-07 US US08/483,315 patent/US5888889A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69321966D1 (de) | 1998-12-10 |
US5592026A (en) | 1997-01-07 |
JP2552100B2 (ja) | 1996-11-06 |
JPH07201908A (ja) | 1995-08-04 |
EP0660402B1 (de) | 1998-11-04 |
EP0660402A1 (de) | 1995-06-28 |
US5888889A (en) | 1999-03-30 |
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