DE69322180T2 - Halbleiteranordnung mit einer Leiterschicht - Google Patents
Halbleiteranordnung mit einer LeiterschichtInfo
- Publication number
- DE69322180T2 DE69322180T2 DE69322180T DE69322180T DE69322180T2 DE 69322180 T2 DE69322180 T2 DE 69322180T2 DE 69322180 T DE69322180 T DE 69322180T DE 69322180 T DE69322180 T DE 69322180T DE 69322180 T2 DE69322180 T2 DE 69322180T2
- Authority
- DE
- Germany
- Prior art keywords
- conductor layer
- semiconductor arrangement
- semiconductor
- arrangement
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76844—Bottomless liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920000904A KR960001601B1 (ko) | 1992-01-23 | 1992-01-23 | 반도체 장치의 접촉구 매몰방법 및 구조 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69322180D1 DE69322180D1 (de) | 1999-01-07 |
DE69322180T2 true DE69322180T2 (de) | 1999-06-24 |
Family
ID=19328196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69322180T Expired - Lifetime DE69322180T2 (de) | 1992-01-23 | 1993-01-22 | Halbleiteranordnung mit einer Leiterschicht |
Country Status (6)
Country | Link |
---|---|
US (3) | US5534463A (de) |
EP (1) | EP0552968B1 (de) |
JP (1) | JP2545184B2 (de) |
KR (1) | KR960001601B1 (de) |
DE (1) | DE69322180T2 (de) |
TW (1) | TW243542B (de) |
Families Citing this family (103)
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---|---|---|---|---|
KR960001601B1 (ko) * | 1992-01-23 | 1996-02-02 | 삼성전자주식회사 | 반도체 장치의 접촉구 매몰방법 및 구조 |
GB2307345A (en) * | 1993-03-02 | 1997-05-21 | Samsung Electronics Co Ltd | Semiconductor device contact structure |
DE19515564B4 (de) * | 1994-04-28 | 2008-07-03 | Denso Corp., Kariya | Elektrode für ein Halbleiterbauelement und Verfahren zur Herstellung derselben |
JP3104534B2 (ja) * | 1994-06-27 | 2000-10-30 | ヤマハ株式会社 | 半導体装置とその製法 |
DE69529775T2 (de) * | 1994-08-05 | 2003-10-16 | Ibm | Verfahren zur Herstellung einer Damaszenstruktur mit einer WGe Polierstoppschicht |
JP3599199B2 (ja) * | 1994-08-31 | 2004-12-08 | 富士通株式会社 | 多層配線を有する半導体装置の製造方法 |
KR0171069B1 (ko) * | 1994-10-27 | 1999-03-30 | 문정환 | 반도체 장치의 접촉부 형성방법 |
US6285082B1 (en) * | 1995-01-03 | 2001-09-04 | International Business Machines Corporation | Soft metal conductor |
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US5527736A (en) * | 1995-04-03 | 1996-06-18 | Taiwan Semiconductor Manufacturing Co. | Dimple-free tungsten etching back process |
KR0179827B1 (ko) * | 1995-05-27 | 1999-04-15 | 문정환 | 반도체 소자의 배선 형성방법 |
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KR0161422B1 (ko) * | 1995-07-31 | 1999-02-01 | 김광호 | 접촉창을 용이하게 매몰한 반도체 장치 및 그 제조 방법 |
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US7211502B2 (en) * | 2003-03-26 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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-
1992
- 1992-01-23 KR KR1019920000904A patent/KR960001601B1/ko not_active IP Right Cessation
-
1993
- 1993-01-15 TW TW082100237A patent/TW243542B/zh not_active IP Right Cessation
- 1993-01-22 EP EP93300459A patent/EP0552968B1/de not_active Expired - Lifetime
- 1993-01-22 JP JP5009215A patent/JP2545184B2/ja not_active Expired - Fee Related
- 1993-01-22 DE DE69322180T patent/DE69322180T2/de not_active Expired - Lifetime
- 1993-01-25 US US08/008,775 patent/US5534463A/en not_active Expired - Lifetime
-
1995
- 1995-06-01 US US08/456,732 patent/US5589713A/en not_active Expired - Lifetime
-
1996
- 1996-03-11 US US08/612,792 patent/US5869902A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0552968A2 (de) | 1993-07-28 |
KR930017100A (ko) | 1993-08-30 |
JPH0684911A (ja) | 1994-03-25 |
TW243542B (de) | 1995-03-21 |
US5534463A (en) | 1996-07-09 |
DE69322180D1 (de) | 1999-01-07 |
US5589713A (en) | 1996-12-31 |
KR960001601B1 (ko) | 1996-02-02 |
EP0552968B1 (de) | 1998-11-25 |
JP2545184B2 (ja) | 1996-10-16 |
US5869902A (en) | 1999-02-09 |
EP0552968A3 (en) | 1993-09-29 |
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