DE69325045D1 - Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung - Google Patents

Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung

Info

Publication number
DE69325045D1
DE69325045D1 DE69325045T DE69325045T DE69325045D1 DE 69325045 D1 DE69325045 D1 DE 69325045D1 DE 69325045 T DE69325045 T DE 69325045T DE 69325045 T DE69325045 T DE 69325045T DE 69325045 D1 DE69325045 D1 DE 69325045D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
surface emitting
emitting semiconductor
improved optical
optical limitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69325045T
Other languages
English (en)
Other versions
DE69325045T2 (de
Inventor
Kent Dennis Choquette
Robert S Freund
Minghwei Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69325045D1 publication Critical patent/DE69325045D1/de
Publication of DE69325045T2 publication Critical patent/DE69325045T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
DE69325045T 1992-03-25 1993-03-18 Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung Expired - Lifetime DE69325045T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/857,350 US5212701A (en) 1992-03-25 1992-03-25 Semiconductor surface emitting laser having enhanced optical confinement

Publications (2)

Publication Number Publication Date
DE69325045D1 true DE69325045D1 (de) 1999-07-01
DE69325045T2 DE69325045T2 (de) 1999-11-11

Family

ID=25325798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325045T Expired - Lifetime DE69325045T2 (de) 1992-03-25 1993-03-18 Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung

Country Status (4)

Country Link
US (2) US5212701A (de)
EP (1) EP0562769B1 (de)
JP (1) JP3121707B2 (de)
DE (1) DE69325045T2 (de)

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JP2708992B2 (ja) * 1991-12-20 1998-02-04 シャープ株式会社 ＡｌＧａＩｎＰ系半導体発光装置の製造方法
US5353295A (en) * 1992-08-10 1994-10-04 The Board Of Trustees Of The University Of Illinois Semiconductor laser device with coupled cavities
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
JPH06268314A (ja) * 1993-03-11 1994-09-22 Nec Corp 半導体レーザ
SE501723C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Optisk förstärkningsanordning samt användning av anordningen
US5559053A (en) * 1994-04-14 1996-09-24 Lucent Technologies Inc. Vertical cavity semiconductor laser
US5510277A (en) * 1994-06-29 1996-04-23 At&T Corp. Surface treatment for silicon substrates
FR2724056B1 (fr) * 1994-08-23 1996-11-15 France Telecom Composant optique, optoelectronique ou photonique comportant au moins une cavite optique confinee lateralement et procede pour sa realisation
US5661075A (en) * 1995-02-06 1997-08-26 Motorola Method of making a VCSEL with passivation
US5903590A (en) * 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
DE69931097T2 (de) * 1998-02-25 2006-10-19 Nippon Telegraph And Telephone Corp. Oberflächenemittierender Halbleiterlaser mit vertikalem Resonator
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6301281B1 (en) * 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10026734A1 (de) * 2000-05-30 2001-12-13 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6534331B2 (en) 2001-07-24 2003-03-18 Luxnet Corporation Method for making a vertical-cavity surface emitting laser with improved current confinement
US6680963B2 (en) 2001-07-24 2004-01-20 Lux Net Corporation Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
US6553053B2 (en) 2001-07-25 2003-04-22 Luxnet Corporation Vertical cavity surface emitting laser having improved light output function
KR100427583B1 (ko) * 2002-01-16 2004-04-28 한국전자통신연구원 장파장 수직 공진 표면광 레이저의 제조 방법
JP2006093350A (ja) * 2004-09-22 2006-04-06 Sumitomo Electric Ind Ltd 半導体光素子
KR100982421B1 (ko) * 2004-10-14 2010-09-15 삼성전자주식회사 깔대기 형태의 전류주입영역을 구비하는 면발광 고출력레이저 소자
KR100982423B1 (ko) * 2004-12-28 2010-09-15 삼성전자주식회사 이중채널 전류주입구조를 구비하는 면발광 레이저 소자
US7502401B2 (en) * 2005-07-22 2009-03-10 Avago Technologies General Ip (Singapore) Pte. Ltd. VCSEL system with transverse P/N junction
JP4877146B2 (ja) * 2007-08-20 2012-02-15 三菱電機株式会社 半導体レーザ素子の製造方法
US10554018B2 (en) * 2017-12-19 2020-02-04 International Business Machines Corporation Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer

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JPS58143596A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 化合物半導体装置の製造方法
EP0113983B1 (de) * 1982-12-16 1987-04-22 Fujitsu Limited Herstellung eines Halbleiterbauelements mittels Molekularstrahlepitaxie
NL8602653A (nl) * 1986-10-23 1988-05-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
US4786616A (en) * 1987-06-12 1988-11-22 American Telephone And Telegraph Company Method for heteroepitaxial growth using multiple MBE chambers
JP2772000B2 (ja) * 1988-11-25 1998-07-02 工業技術院長 電極分離型半導体レーザ装置
JP2863773B2 (ja) * 1988-12-28 1999-03-03 科学技術振興事業団 面発光型半導体レーザ装置
US5076205A (en) * 1989-01-06 1991-12-31 General Signal Corporation Modular vapor processor system
JP2742539B2 (ja) * 1989-06-16 1998-04-22 科学技術振興事業団 面発光型半導体レーザ
JP2799328B2 (ja) * 1989-06-16 1998-09-17 科学技術振興事業団 面発光型半導体レーザ
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5031187A (en) * 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5034958A (en) * 1990-04-19 1991-07-23 Bell Communications Research, Inc. Front-surface emitting diode laser
US5034092A (en) * 1990-10-09 1991-07-23 Motorola, Inc. Plasma etching of semiconductor substrates
US5104824A (en) * 1990-11-06 1992-04-14 Bell Communications Research, Inc. Selective area regrowth for surface-emitting lasers and other sharp features
US5208183A (en) * 1990-12-20 1993-05-04 At&T Bell Laboratories Method of making a semiconductor laser

Also Published As

Publication number Publication date
DE69325045T2 (de) 1999-11-11
US5212701A (en) 1993-05-18
EP0562769B1 (de) 1999-05-26
JPH0613710A (ja) 1994-01-21
JP3121707B2 (ja) 2001-01-09
EP0562769A3 (en) 1993-12-22
US5348912A (en) 1994-09-20
EP0562769A2 (de) 1993-09-29

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