DE69329629D1 - Oxyde mit hoher dielektrischer Konstante auf Halbleitern, die eine Ge-Pufferschicht benützen - Google Patents
Oxyde mit hoher dielektrischer Konstante auf Halbleitern, die eine Ge-Pufferschicht benützenInfo
- Publication number
- DE69329629D1 DE69329629D1 DE69329629T DE69329629T DE69329629D1 DE 69329629 D1 DE69329629 D1 DE 69329629D1 DE 69329629 T DE69329629 T DE 69329629T DE 69329629 T DE69329629 T DE 69329629T DE 69329629 D1 DE69329629 D1 DE 69329629D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductors
- oxides
- dielectric constant
- buffer layer
- high dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/877,287 US5326721A (en) | 1992-05-01 | 1992-05-01 | Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69329629D1 true DE69329629D1 (de) | 2000-12-14 |
DE69329629T2 DE69329629T2 (de) | 2001-05-10 |
Family
ID=25369639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69329629T Expired - Fee Related DE69329629T2 (de) | 1992-05-01 | 1993-04-29 | Oxyde mit hoher dielektrischer Konstante auf Halbleitern, die eine Ge-Pufferschicht benützen |
Country Status (6)
Country | Link |
---|---|
US (3) | US5326721A (de) |
EP (1) | EP0568065B1 (de) |
JP (1) | JP3320836B2 (de) |
KR (1) | KR100295716B1 (de) |
DE (1) | DE69329629T2 (de) |
TW (1) | TW253978B (de) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0568064B1 (de) * | 1992-05-01 | 1999-07-14 | Texas Instruments Incorporated | Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten |
US5572052A (en) * | 1992-07-24 | 1996-11-05 | Mitsubishi Denki Kabushiki Kaisha | Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer |
US6664115B2 (en) * | 1992-10-23 | 2003-12-16 | Symetrix Corporation | Metal insulator structure with polarization-compatible buffer layer |
EP0617440B1 (de) * | 1993-03-25 | 1997-03-05 | Matsushita Electric Industrial Co., Ltd. | Dünnschichtkondensator und Verfahren zu seiner Herstellung |
EP0618597B1 (de) * | 1993-03-31 | 1997-07-16 | Texas Instruments Incorporated | Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante |
US6404003B1 (en) | 1999-07-28 | 2002-06-11 | Symetrix Corporation | Thin film capacitors on silicon germanium substrate |
JP3113141B2 (ja) * | 1993-12-28 | 2000-11-27 | シャープ株式会社 | 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス |
JPH07307444A (ja) * | 1994-05-16 | 1995-11-21 | Mitsubishi Materials Corp | 不揮発性強誘電体薄膜メモリのパターン形成方法 |
US5753945A (en) * | 1995-06-29 | 1998-05-19 | Northern Telecom Limited | Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer |
US5948216A (en) * | 1996-05-17 | 1999-09-07 | Lucent Technologies Inc. | Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers |
JP3052842B2 (ja) * | 1996-06-07 | 2000-06-19 | 富士ゼロックス株式会社 | 強誘電体薄膜素子の製造方法 |
US6225655B1 (en) * | 1996-10-25 | 2001-05-01 | Texas Instruments Incorporated | Ferroelectric transistors using thin film semiconductor gate electrodes |
JP3011122B2 (ja) * | 1996-12-03 | 2000-02-21 | 住友電気工業株式会社 | 積層型酸化物絶縁膜 |
US5973351A (en) * | 1997-01-22 | 1999-10-26 | International Business Machines Corporation | Semiconductor device with high dielectric constant insulator material |
JP3337622B2 (ja) * | 1997-07-16 | 2002-10-21 | 松下電器産業株式会社 | 選択的エッチング液及びそのエッチング液を用いた半導体装置の製造方法 |
US6074885A (en) * | 1997-11-25 | 2000-06-13 | Radiant Technologies, Inc | Lead titanate isolation layers for use in fabricating PZT-based capacitors and similar structures |
EP0926739A1 (de) | 1997-12-24 | 1999-06-30 | Texas Instruments Incorporated | Struktur und Herstellungsverfahren für MIS-Feldeffekt-Transistor |
KR100436059B1 (ko) | 1997-12-30 | 2004-12-17 | 주식회사 하이닉스반도체 | 강유전체 캐패시터 형성 방법 |
KR20000026967A (ko) | 1998-10-24 | 2000-05-15 | 김영환 | 반도체 장치의 커패시터 및 그 형성 방법 |
US6270568B1 (en) * | 1999-07-15 | 2001-08-07 | Motorola, Inc. | Method for fabricating a semiconductor structure with reduced leakage current density |
TW417293B (en) | 1999-08-27 | 2001-01-01 | Taiwan Semiconductor Mfg | Formation of DRAM capacitor |
US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
JP4445091B2 (ja) * | 2000-04-07 | 2010-04-07 | 康夫 垂井 | 強誘電体記憶素子 |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6432546B1 (en) | 2000-07-24 | 2002-08-13 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
US6482538B2 (en) | 2000-07-24 | 2002-11-19 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
US6493497B1 (en) | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6583034B2 (en) | 2000-11-22 | 2003-06-24 | Motorola, Inc. | Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure |
US6559471B2 (en) | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US7046719B2 (en) | 2001-03-08 | 2006-05-16 | Motorola, Inc. | Soft handoff between cellular systems employing different encoding rates |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6531740B2 (en) | 2001-07-17 | 2003-03-11 | Motorola, Inc. | Integrated impedance matching and stability network |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6498358B1 (en) * | 2001-07-20 | 2002-12-24 | Motorola, Inc. | Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6462360B1 (en) | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
US7453129B2 (en) | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
US7320931B2 (en) * | 2004-07-30 | 2008-01-22 | Freescale Semiconductor Inc. | Interfacial layer for use with high k dielectric materials |
US8124513B2 (en) * | 2009-03-18 | 2012-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium field effect transistors and fabrication thereof |
EP2270840B1 (de) * | 2009-06-29 | 2020-06-03 | IMEC vzw | Verfahren zur Herstellung eines Substrats aus III-V Material und zugehöriges Substrat |
US20170185400A1 (en) | 2015-12-23 | 2017-06-29 | Intel Corporation | Mode-specific endbranch for control flow termination |
EP3670708A1 (de) | 2018-12-20 | 2020-06-24 | IMEC vzw | Perowskitoxide mit a-achsen-ausrichtung |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3496037A (en) * | 1967-05-29 | 1970-02-17 | Motorola Inc | Semiconductor growth on dielectric substrates |
DE3311401A1 (de) * | 1983-03-29 | 1984-10-04 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Duennschichtfeldeffekttransistor |
JPS61241911A (ja) * | 1985-04-18 | 1986-10-28 | Sharp Corp | 化合物半導体装置 |
JPS63122177A (ja) * | 1986-11-11 | 1988-05-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置とその製造方法 |
JPS63140521A (ja) * | 1986-12-02 | 1988-06-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
US4945710A (en) * | 1988-11-03 | 1990-08-07 | Oscar Mayer Foods Corporation | Method of forming a reclosable package |
JPH03160714A (ja) * | 1989-11-20 | 1991-07-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
EP0430176B1 (de) * | 1989-11-29 | 1994-08-24 | Kao Corporation | Verfahren und Vorrichtung zum Handhaben von Artikeln |
DE69009694T2 (de) * | 1989-11-30 | 1995-01-12 | Taiyo Yuden Kk | Festdielektrikum-Kondensator und Verfahren zur Herstellung. |
US5168330A (en) * | 1990-12-03 | 1992-12-01 | Research Triangle Institute | Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer |
-
1992
- 1992-05-01 US US07/877,287 patent/US5326721A/en not_active Expired - Lifetime
-
1993
- 1993-04-29 EP EP93106972A patent/EP0568065B1/de not_active Expired - Lifetime
- 1993-04-29 DE DE69329629T patent/DE69329629T2/de not_active Expired - Fee Related
- 1993-04-30 JP JP13887193A patent/JP3320836B2/ja not_active Expired - Fee Related
- 1993-04-30 KR KR1019930007400A patent/KR100295716B1/ko not_active IP Right Cessation
- 1993-08-27 TW TW082106945A patent/TW253978B/zh active
-
1994
- 1994-04-04 US US08/223,085 patent/US5473171A/en not_active Expired - Lifetime
-
1997
- 1997-01-03 US US08/774,713 patent/US5825055A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5825055A (en) | 1998-10-20 |
EP0568065B1 (de) | 2000-11-08 |
JPH0684736A (ja) | 1994-03-25 |
KR940006212A (ko) | 1994-03-23 |
JP3320836B2 (ja) | 2002-09-03 |
DE69329629T2 (de) | 2001-05-10 |
US5326721A (en) | 1994-07-05 |
US5473171A (en) | 1995-12-05 |
EP0568065A3 (en) | 1994-09-14 |
TW253978B (de) | 1995-08-11 |
EP0568065A2 (de) | 1993-11-03 |
KR100295716B1 (ko) | 2001-10-24 |
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