DE69330499D1 - Piezoelektrischer Resonator und Herstellungsverfahren derselben - Google Patents

Piezoelektrischer Resonator und Herstellungsverfahren derselben

Info

Publication number
DE69330499D1
DE69330499D1 DE69330499T DE69330499T DE69330499D1 DE 69330499 D1 DE69330499 D1 DE 69330499D1 DE 69330499 T DE69330499 T DE 69330499T DE 69330499 T DE69330499 T DE 69330499T DE 69330499 D1 DE69330499 D1 DE 69330499D1
Authority
DE
Germany
Prior art keywords
manufacturing
piezoelectric resonator
resonator
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330499T
Other languages
English (en)
Other versions
DE69330499T2 (de
Inventor
Kazuo Eda
Takashi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69330499D1 publication Critical patent/DE69330499D1/de
Application granted granted Critical
Publication of DE69330499T2 publication Critical patent/DE69330499T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
DE69330499T 1992-07-08 1993-07-08 Piezoelektrischer Resonator und Herstellungsverfahren derselben Expired - Fee Related DE69330499T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4180856A JPH06291587A (ja) 1992-07-08 1992-07-08 圧電振動子

Publications (2)

Publication Number Publication Date
DE69330499D1 true DE69330499D1 (de) 2001-08-30
DE69330499T2 DE69330499T2 (de) 2002-06-06

Family

ID=16090561

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69330499T Expired - Fee Related DE69330499T2 (de) 1992-07-08 1993-07-08 Piezoelektrischer Resonator und Herstellungsverfahren derselben
DE69322819T Expired - Fee Related DE69322819T2 (de) 1992-07-08 1993-07-08 Piezoelektrischer Schwinger und sein Herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69322819T Expired - Fee Related DE69322819T2 (de) 1992-07-08 1993-07-08 Piezoelektrischer Schwinger und sein Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5548178A (de)
EP (2) EP0797300B1 (de)
JP (1) JPH06291587A (de)
DE (2) DE69330499T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350376A (ja) * 1993-01-25 1994-12-22 Matsushita Electric Ind Co Ltd 気密封止された圧電デバイスおよび気密封止パッケージ
US5686779A (en) * 1995-03-01 1997-11-11 The United States Of America As Represented By The Secretary Of The Army High sensitivity temperature sensor and sensor array
US6016025A (en) * 1997-05-15 2000-01-18 M-Tron Industries, Inc. Selected overtone resonator with channels
JP3731348B2 (ja) * 1998-06-09 2006-01-05 松下電器産業株式会社 圧電振動子
JP2000252786A (ja) * 1999-03-01 2000-09-14 Matsushita Electric Ind Co Ltd 圧電振動素子
US6654711B1 (en) 1999-06-15 2003-11-25 Seiko Epson Corporation Correction factors for the analysis of piezoelectric devices
US6658376B1 (en) 1999-06-15 2003-12-02 Seiko Epson Corporation Determination of vibration frequency characteristics of electroded crystal plate
DE19928190A1 (de) * 1999-06-19 2001-01-11 Bosch Gmbh Robert Piezoaktor
DE19928179B4 (de) * 1999-06-19 2008-07-31 Robert Bosch Gmbh Piezoaktor
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
JP4576693B2 (ja) * 2000-10-04 2010-11-10 エプソントヨコム株式会社 圧電振動子
KR20020038197A (ko) * 2000-11-16 2002-05-23 박명수 압전소자를 이용한 골도 보청기용 진동자
US6628048B2 (en) * 2000-11-29 2003-09-30 Samsung Electro-Mechanics Co., Ltd. Crystal oscillator with improved shock resistance
US6958566B2 (en) * 2001-08-16 2005-10-25 The Regents Of The University Of Michigan Mechanical resonator device having phenomena-dependent electrical stiffness
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US7990025B1 (en) * 2004-09-01 2011-08-02 Pablo Ferreiro Silicon package with embedded oscillator
JP4997780B2 (ja) * 2005-05-16 2012-08-08 セイコーエプソン株式会社 圧電振動片の製造方法
US20060284628A1 (en) * 2005-06-16 2006-12-21 Jiun-Der Yu Super element for the prediction of viscosity effect on crystal plate
US7568377B2 (en) * 2005-07-28 2009-08-04 University Of South Florida High frequency thickness shear mode acoustic wave sensor for gas and organic vapor detection
JP4692277B2 (ja) * 2005-12-28 2011-06-01 株式会社大真空 圧電振動デバイス
JP4855816B2 (ja) * 2006-03-31 2012-01-18 京セラキンセキ株式会社 ラーメモード水晶振動子の製造方法
EP2015449A1 (de) * 2007-07-13 2009-01-14 ETA SA Manufacture Horlogère Suisse Verpackung für einen piezoelektrischen Resonator
JP5198135B2 (ja) * 2008-04-30 2013-05-15 日本電波工業株式会社 圧電振動子及び電子部品
US8242664B2 (en) * 2008-12-26 2012-08-14 Nihon Dempa Kogyo Co., Ltd. Elastic wave device and electronic component
JP5637839B2 (ja) * 2010-12-22 2014-12-10 日本電波工業株式会社 圧電デバイス及び圧電デバイスの製造方法
US20130235001A1 (en) * 2012-03-06 2013-09-12 Qualcomm Mems Technologies, Inc. Piezoelectric resonator with airgap
EP2974014A4 (de) * 2013-03-11 2016-11-02 Nokia Technologies Oy Vorrichtung und verfahren zum abstimmen einer resonanzfrequenz
WO2015084456A2 (en) * 2013-09-18 2015-06-11 The Regents Of The University Of California Tunable q resonator
WO2017075413A1 (en) 2015-10-28 2017-05-04 Georgia Tech Research Corporation Comb-driven substrate decoupled annulus pitch/roll baw gyroscope with slanted quadrature tuning electrode
WO2018057071A1 (en) * 2016-06-07 2018-03-29 Georgia Tech Research Corporation Pitch/roll annulus gyroscope with slanted quadrature tuning electrodes and related fabrication methods
CN109668952A (zh) * 2018-12-19 2019-04-23 中国科学院苏州生物医学工程技术研究所 压电传感芯片、压电传感器及其制备方法
DE102019113797A1 (de) * 2019-05-23 2020-12-10 RF360 Europe GmbH BAW-Resonator mit reduzierten Verlusten, HF-Filter, Multiplexer und Verfahren zum Herstellen eines BAW-Resonators
CN113395053B (zh) * 2021-03-02 2022-12-09 广州乐仪投资有限公司 石英薄膜谐振器及其制造方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2133647A (en) * 1931-06-25 1938-10-18 Pierce George Washington Electromechanical vibrator
US2229172A (en) * 1938-11-28 1941-01-21 Rca Corp Method of and apparatus for mounting piezoelectric crystals
US2427825A (en) * 1943-11-06 1947-09-23 Rca Corp Art of mounting piezoelectric crystals
NL122607C (de) * 1961-07-26 1900-01-01
US3339091A (en) * 1964-05-25 1967-08-29 Hewlett Packard Co Crystal resonators
US3694677A (en) * 1971-03-03 1972-09-26 Us Army Vhf-uhf piezoelectric resonators
SU513471A1 (ru) * 1973-01-17 1976-05-05 Предприятие П/Я Г-4149 Кварцевый резонатор
SU510775A1 (ru) * 1974-03-12 1976-04-15 Предприятие П/Я Х-5332 Пьезоэлектрический резонатор
DE2516307A1 (de) * 1975-04-15 1976-10-28 Licentia Gmbh Als frequenznormal verwendbare elektromechanische resonatoranordnung
FR2338607A1 (fr) * 1976-01-16 1977-08-12 France Etat Resonateur a quartz a electrodes non adherentes au cristal
SU580621A1 (ru) * 1976-06-25 1977-11-15 Предприятие П/Я Х-5332 Герметичный пьезоэлектрический резонатор
US4141209A (en) * 1976-12-27 1979-02-27 Fairchild Camera And Instrument Corporation Crystal controlled oscillator and method of tuning same
JPS5478693A (en) * 1977-12-05 1979-06-22 Matsushima Kogyo Co Ltd Crystal vibrator
FR2438939A1 (fr) * 1978-10-09 1980-05-09 France Etat Bi-resonateur piezoelectrique
US4270105A (en) * 1979-05-14 1981-05-26 Raytheon Company Stabilized surface wave device
FR2458150A1 (fr) * 1979-05-31 1980-12-26 Ebauches Sa Resonateur a cristal taille pour fonctionner en cisaillement d'epaisseur
FR2462055A1 (fr) * 1979-07-18 1981-02-06 France Etat Oscillateur haute frequence autothermostate
GB2068672B (en) * 1979-12-24 1984-11-07 Clarion Co Ltd Surface-acoustic-wave parametric device
US4531267A (en) * 1982-03-30 1985-07-30 Honeywell Inc. Method for forming a pressure sensor
FR2527865A1 (fr) * 1982-06-01 1983-12-02 Cepe Resonateur piezo-electrique a haute frequence et son procede de fabrication
FR2538953B1 (fr) * 1982-12-30 1986-02-28 Thomson Csf Structure epitaxiale a effet piezoelectrique exalte et dispositif electronique a ondes acoustiques de surface comportant une telle structure
FR2554289B1 (fr) * 1983-10-28 1985-12-27 Cepe Procede et dispositif d'usinage d'une lame de resonateur et lame ainsi obtenue
CH655423GA3 (de) * 1984-02-15 1986-04-30
JPS6141215A (ja) * 1984-07-31 1986-02-27 Nippon Dempa Kogyo Co Ltd 水晶振動子
JPS6163107A (ja) * 1984-09-05 1986-04-01 Nippon Dempa Kogyo Co Ltd 水晶振動子
US4945079A (en) * 1984-11-13 1990-07-31 Aluminum Company Of America Catalyst of nickel and molybdenum supported on alumina
DE3650562T2 (de) * 1985-04-11 1997-03-20 Toyo Communication Equip Piezoelektrischer resonator zur erzeugung von oberschwingungen
US4719383A (en) * 1985-05-20 1988-01-12 The United States Of America As Represented By The United States Department Of Energy Piezoelectric shear wave resonator and method of making same
JPS6227040A (ja) * 1985-07-26 1987-02-05 Sapporo Breweries Ltd 物質を澱粉に吸着あるいは包接させる方法
US4665374A (en) * 1985-12-20 1987-05-12 Allied Corporation Monolithic programmable signal processor using PI-FET taps
US4898897A (en) * 1987-04-24 1990-02-06 Konica Corporation Process for producing polyester resin composition
JPS63285195A (ja) * 1987-05-19 1988-11-22 Yokogawa Electric Corp 単結晶水晶体の接合方法
GB8802506D0 (en) * 1988-02-04 1988-03-02 Am Int Piezo-electric laminate
US5189914A (en) * 1988-02-29 1993-03-02 The Regents Of The University Of California Plate-mode ultrasonic sensor
US4924408A (en) * 1988-08-19 1990-05-08 International Business Machines Corporation Technique for compilation of knowledge bases
JPH0257009A (ja) * 1988-08-23 1990-02-26 Yokogawa Electric Corp 圧電共振器
JPH06103821B2 (ja) * 1988-10-31 1994-12-14 横河電機株式会社 水晶振動子
JPH036912A (ja) * 1989-06-02 1991-01-14 Fujitsu Ltd 弾性表面波素子
DE3922671A1 (de) * 1989-07-10 1991-01-24 Siemens Ag Akustoelektronisches bauelement mit einer oberflaechenwellenanordnung und einer elektronischen halbleiterschaltung
JPH03178206A (ja) * 1989-12-06 1991-08-02 Nec Corp モノリシック集積回路化発振器
JPH03141715A (ja) * 1990-10-11 1991-06-17 Yokogawa Electric Corp 圧電共振器
US5075641A (en) * 1990-12-04 1991-12-24 Iowa State University Research Foundation, Inc. High frequency oscillator comprising cointegrated thin film resonator and active device
JP2643620B2 (ja) * 1991-03-13 1997-08-20 松下電器産業株式会社 電圧制御発振器とその製造方法
US5185589A (en) * 1991-05-17 1993-02-09 Westinghouse Electric Corp. Microwave film bulk acoustic resonator and manifolded filter bank
JPH0522071A (ja) * 1991-07-15 1993-01-29 Yokogawa Electric Corp 非接触電極型水晶振動子
DE69232277T2 (de) * 1991-09-12 2002-08-08 Matsushita Electric Ind Co Ltd Elektroakustische hybride integrierte Schaltung und Methode zu deren Herstellung
US5198716A (en) * 1991-12-09 1993-03-30 The United States Of America As Represented By The United States Department Of Energy Micro-machined resonator
US5453652A (en) * 1992-12-17 1995-09-26 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device with interdigital transducers formed on a holding substrate thereof and a method of producing the same
EP0647022A3 (de) * 1993-10-05 1996-10-02 Matsushita Electric Ind Co Ltd Akustische Oberflächenwellenhalbleiter-Verbundanlage.

Also Published As

Publication number Publication date
EP0580025A1 (de) 1994-01-26
DE69322819D1 (de) 1999-02-11
EP0797300A1 (de) 1997-09-24
DE69322819T2 (de) 1999-08-19
US5548178A (en) 1996-08-20
DE69330499T2 (de) 2002-06-06
EP0580025B1 (de) 1998-12-30
JPH06291587A (ja) 1994-10-18
EP0797300B1 (de) 2001-07-25

Similar Documents

Publication Publication Date Title
DE69330499T2 (de) Piezoelektrischer Resonator und Herstellungsverfahren derselben
DE69413751D1 (de) Piezoelektrischer Resonator und Verfahren zur Herstellung
DE69611046D1 (de) Piezoelektrischer Oszillator, spannungsgesteuerter Ozillator, und Herstellungsverfahren derselben
DE69427780T2 (de) Dielektrischer Resonator und dielektrisches Filter
DE69333336T2 (de) Isolatorstruktur und zugehöriges Herstellungsverfahren
DE69415068T2 (de) Mikromotor und Herstellungsverfahren desselben
DE69322807T2 (de) Zahnprothese und Herstellungsverfahren
DE69315116T2 (de) Akustischer Resonator
DE69411973D1 (de) Geschichteter dielektrischer Resonator und dielektrisches Filter
DE69427733D1 (de) Elektroakustischer Wandler und dessen Herstellungsmethode
DE69410214D1 (de) Monolithische integrierter Laser und Modulator und Herstellungsverfahren
DE69032666D1 (de) Eingekapselter piezoelektrischer Resonator
FI942014A0 (fi) Rakenneosa ja sen valmistusmenetelmä
DE69401733T2 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69512809D1 (de) Hochfrequentes piezoelektrisches Kettenfilter und piezoelektrischer Resonator dafür
DE69415202D1 (de) Piezoelektrisches Filter
DE69319317T2 (de) Halbleiterlaser und Herstellungsverfahren
EP0626212A3 (de) Haltungsstruktur für einen piezoelektrischen Schwinger und zugehörigen Herstellungsverfahren.
DE69614983D1 (de) Piezoelektrischer Resonator
FI921936A0 (fi) Menetelmä elementtirakenteen valmistamiseksi ja elementtirakenne
DE69425235T2 (de) Dielektrischer Resonator und Herstellunsverfahren dafür
DE69314158D1 (de) Elektronisches bauelement und dessen herstellungsverfahren
KR900009492A (ko) 압전성 자기 및 그 제조방법
DE69302357D1 (de) Zündungsquelle und Herstellungsverfahren derselben
SG34232A1 (en) Piezoelectric element and method of manufacturing the same

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee