DE69331416D1 - Verbindungsstruktur fur integrierte schaltung und verfahren zu deren herstellung - Google Patents

Verbindungsstruktur fur integrierte schaltung und verfahren zu deren herstellung

Info

Publication number
DE69331416D1
DE69331416D1 DE69331416T DE69331416T DE69331416D1 DE 69331416 D1 DE69331416 D1 DE 69331416D1 DE 69331416 T DE69331416 T DE 69331416T DE 69331416 T DE69331416 T DE 69331416T DE 69331416 D1 DE69331416 D1 DE 69331416D1
Authority
DE
Germany
Prior art keywords
production
integrated circuit
connecting structure
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331416T
Other languages
English (en)
Other versions
DE69331416T2 (de
Inventor
Glenn J Leddy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69331416D1 publication Critical patent/DE69331416D1/de
Publication of DE69331416T2 publication Critical patent/DE69331416T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70653Metrology techniques
    • G03F7/70658Electrical testing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/0735Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/97Specified etch stop material
DE69331416T 1992-10-13 1993-10-12 Verbindungsstruktur fur integrierte schaltung und verfahren zu deren herstellung Expired - Fee Related DE69331416T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/960,588 US5323035A (en) 1992-10-13 1992-10-13 Interconnection structure for integrated circuits and method for making same
PCT/US1993/009709 WO1994009513A1 (en) 1992-10-13 1993-10-12 Interconnection structure for integrated circuits and method for making same

Publications (2)

Publication Number Publication Date
DE69331416D1 true DE69331416D1 (de) 2002-02-07
DE69331416T2 DE69331416T2 (de) 2003-04-17

Family

ID=25503358

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331416T Expired - Fee Related DE69331416T2 (de) 1992-10-13 1993-10-12 Verbindungsstruktur fur integrierte schaltung und verfahren zu deren herstellung

Country Status (6)

Country Link
US (2) US5323035A (de)
EP (1) EP0664925B1 (de)
JP (1) JP3699978B2 (de)
KR (1) KR100307082B1 (de)
DE (1) DE69331416T2 (de)
WO (1) WO1994009513A1 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288561B1 (en) * 1988-05-16 2001-09-11 Elm Technology Corporation Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5634267A (en) * 1991-06-04 1997-06-03 Micron Technology, Inc. Method and apparatus for manufacturing known good semiconductor die
US5640762A (en) 1988-09-30 1997-06-24 Micron Technology, Inc. Method and apparatus for manufacturing known good semiconductor die
US5487999A (en) * 1991-06-04 1996-01-30 Micron Technology, Inc. Method for fabricating a penetration limited contact having a rough textured surface
US6828812B2 (en) * 1991-06-04 2004-12-07 Micron Technology, Inc. Test apparatus for testing semiconductor dice including substrate with penetration limiting contacts for making electrical connections
US5716218A (en) 1991-06-04 1998-02-10 Micron Technology, Inc. Process for manufacturing an interconnect for testing a semiconductor die
US5541525A (en) * 1991-06-04 1996-07-30 Micron Technology, Inc. Carrier for testing an unpackaged semiconductor die
US6219908B1 (en) 1991-06-04 2001-04-24 Micron Technology, Inc. Method and apparatus for manufacturing known good semiconductor die
US5686317A (en) * 1991-06-04 1997-11-11 Micron Technology, Inc. Method for forming an interconnect having a penetration limited contact structure for establishing a temporary electrical connection with a semiconductor die
US5585282A (en) * 1991-06-04 1996-12-17 Micron Technology, Inc. Process for forming a raised portion on a projecting contact for electrical testing of a semiconductor
US5495179A (en) * 1991-06-04 1996-02-27 Micron Technology, Inc. Carrier having interchangeable substrate used for testing of semiconductor dies
US6340894B1 (en) 1991-06-04 2002-01-22 Micron Technology, Inc. Semiconductor testing apparatus including substrate with contact members and conductive polymer interconnect
US5578526A (en) * 1992-03-06 1996-11-26 Micron Technology, Inc. Method for forming a multi chip module (MCM)
US6714625B1 (en) * 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
US5462624A (en) * 1992-12-22 1995-10-31 Vlsi Technology, Inc. Embedded inter-connect frame
US5326428A (en) 1993-09-03 1994-07-05 Micron Semiconductor, Inc. Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability
US5592736A (en) * 1993-09-03 1997-01-14 Micron Technology, Inc. Fabricating an interconnect for testing unpackaged semiconductor dice having raised bond pads
US5483741A (en) * 1993-09-03 1996-01-16 Micron Technology, Inc. Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice
US5478779A (en) 1994-03-07 1995-12-26 Micron Technology, Inc. Electrically conductive projections and semiconductor processing method of forming same
US6414506B2 (en) 1993-09-03 2002-07-02 Micron Technology, Inc. Interconnect for testing semiconductor dice having raised bond pads
US5382759A (en) * 1993-09-28 1995-01-17 Trw Inc. Massive parallel interconnection attachment using flexible circuit
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US6482013B2 (en) 1993-11-16 2002-11-19 Formfactor, Inc. Microelectronic spring contact element and electronic component having a plurality of spring contact elements
US7579269B2 (en) * 1993-11-16 2009-08-25 Formfactor, Inc. Microelectronic spring contact elements
US6727580B1 (en) 1993-11-16 2004-04-27 Formfactor, Inc. Microelectronic spring contact elements
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
US5585736A (en) * 1994-11-29 1996-12-17 Fwu-Iuan Hshieh Contact probe utilizing conductive meltable probing material
US6002266A (en) * 1995-05-23 1999-12-14 Digital Equipment Corporation Socket including centrally distributed test tips for testing unpackaged singulated die
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
US5729150A (en) 1995-12-01 1998-03-17 Cascade Microtech, Inc. Low-current probe card with reduced triboelectric current generating cables
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
JPH09229945A (ja) * 1996-02-23 1997-09-05 Canon Inc マイクロ構造体を支持するエアブリッジ型構造体の製造方法とその雌型基板、並びに、エアブリッジ型構造体とそれを用いたマイクロ構造体およびトンネル電流または微小力検出用のプローブ
US5869974A (en) * 1996-04-01 1999-02-09 Micron Technology, Inc. Micromachined probe card having compliant contact members for testing semiconductor wafers
TW346676B (en) * 1996-05-14 1998-12-01 Matsushita Electron Co Ltd Method of manufacturing layered ferroelectric Bi containing film
DE69733928T2 (de) * 1996-05-17 2006-06-14 Formfactor Inc Mikroelektronische kontaktstruktur und herstellungsverfahren dazu
EP0898712B1 (de) * 1996-05-17 2003-08-06 Formfactor, Inc. Einbrennen und testen eines halbleiterwafers
TW341747B (en) * 1996-05-17 1998-10-01 Formfactor Inc Techniques of fabricating interconnection elements and tip structures for same using sacrificial substrates
US5793913A (en) * 1996-07-10 1998-08-11 Northern Telecom Limited Method for the hybrid integration of discrete elements on a semiconductor substrate
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US6498074B2 (en) 1996-10-29 2002-12-24 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
EP2270846A3 (de) * 1996-10-29 2011-12-21 ALLVIA, Inc. Integrierte Schaltungen und Verfahren zu ihrer Herstellung
US6882030B2 (en) * 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
US6520778B1 (en) 1997-02-18 2003-02-18 Formfactor, Inc. Microelectronic contact structures, and methods of making same
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
FR2762140B1 (fr) * 1997-04-10 2000-01-14 Mesatronic Procede de fabrication d'une carte a pointes de contact multiple pour le test des puces semiconductrices
JPH10303252A (ja) * 1997-04-28 1998-11-13 Nec Kansai Ltd 半導体装置
US6034533A (en) 1997-06-10 2000-03-07 Tervo; Paul A. Low-current pogo probe card
US6028436A (en) 1997-12-02 2000-02-22 Micron Technology, Inc. Method for forming coaxial silicon interconnects
GB9800957D0 (en) 1998-01-17 1998-03-11 Process Intelligence Limited Test probe interface unit and method for manufacturing the same
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6807734B2 (en) 1998-02-13 2004-10-26 Formfactor, Inc. Microelectronic contact structures, and methods of making same
US6137173A (en) * 1998-06-30 2000-10-24 Intel Corporation Preventing backside analysis of an integrated circuit
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6235630B1 (en) * 1998-08-19 2001-05-22 Micron Technology, Inc. Silicide pattern structures and methods of fabricating the same
US6233184B1 (en) 1998-11-13 2001-05-15 International Business Machines Corporation Structures for wafer level test and burn-in
US6255126B1 (en) 1998-12-02 2001-07-03 Formfactor, Inc. Lithographic contact elements
US6255585B1 (en) * 1999-01-29 2001-07-03 Advantest Corp. Packaging and interconnection of contact structure
US6351133B1 (en) * 1999-03-31 2002-02-26 Adoamtest Corp. Packaging and interconnection of contact structure
US6578264B1 (en) 1999-06-04 2003-06-17 Cascade Microtech, Inc. Method for constructing a membrane probe using a depression
CN1174836C (zh) * 1999-07-21 2004-11-10 卡斯卡德微技术公司 膜片测试系统
US7435108B1 (en) * 1999-07-30 2008-10-14 Formfactor, Inc. Variable width resilient conductive contact structures
US6713374B2 (en) 1999-07-30 2004-03-30 Formfactor, Inc. Interconnect assemblies and methods
US6759858B2 (en) * 1999-10-20 2004-07-06 Intel Corporation Integrated circuit test probe having ridge contact
US6322903B1 (en) * 1999-12-06 2001-11-27 Tru-Si Technologies, Inc. Package of integrated circuits and vertical integration
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6838890B2 (en) * 2000-02-25 2005-01-04 Cascade Microtech, Inc. Membrane probing system
US10388626B2 (en) 2000-03-10 2019-08-20 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming flipchip interconnect structure
JP4903966B2 (ja) * 2000-03-10 2012-03-28 スタッツ・チップパック・インコーポレイテッド フリップチップ接合構造及びフリップチップ接合構造を形成する方法
DE10055712B4 (de) * 2000-11-10 2006-07-13 Infineon Technologies Ag Verfahren zur Herstellung von Grabenkondensatoren für hochintegrierte Halbleiterspeicher
DE10143173A1 (de) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafersonde
US6815736B2 (en) 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US6717254B2 (en) * 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
US6748994B2 (en) * 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
AU2002327490A1 (en) 2001-08-21 2003-06-30 Cascade Microtech, Inc. Membrane probing system
US6787916B2 (en) 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
US6759311B2 (en) 2001-10-31 2004-07-06 Formfactor, Inc. Fan out of interconnect elements attached to semiconductor wafer
TWI309074B (en) * 2002-02-07 2009-04-21 Advanced Epitaxy Technology Method of forming semiconductor device
US6848177B2 (en) * 2002-03-28 2005-02-01 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
US6908845B2 (en) * 2002-03-28 2005-06-21 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
US20030183943A1 (en) * 2002-03-28 2003-10-02 Swan Johanna M. Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
JP2003315361A (ja) * 2002-04-26 2003-11-06 Japan Electronic Materials Corp プローブの製造方法、このプローブの製造用マスク及びプローブ
US6815963B2 (en) * 2002-05-23 2004-11-09 Cascade Microtech, Inc. Probe for testing a device under test
WO2004015764A2 (en) 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
JP2004221502A (ja) * 2003-01-17 2004-08-05 Nec Electronics Corp バンプ電極付き配線基板及びその製造方法
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
US7427868B2 (en) 2003-12-24 2008-09-23 Cascade Microtech, Inc. Active wafer probe
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US20080220542A1 (en) * 2007-03-07 2008-09-11 Micheli Adolph L Low-fire ferroelectric material
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
US8410806B2 (en) 2008-11-21 2013-04-02 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
KR101022912B1 (ko) * 2008-11-28 2011-03-17 삼성전기주식회사 금속범프를 갖는 인쇄회로기판 및 그 제조방법
WO2011112612A1 (en) 2010-03-08 2011-09-15 Alliance For Sustainable Energy, Llc Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
US8368153B2 (en) * 2010-04-08 2013-02-05 United Microelectronics Corp. Wafer level package of MEMS microphone and manufacturing method thereof
US8076177B2 (en) * 2010-05-14 2011-12-13 International Business Machines Corporation Scalable transfer-join bonding lock-and-key structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US3458778A (en) * 1967-05-29 1969-07-29 Microwave Ass Silicon semiconductor with metal-silicide heterojunction
GB1197272A (en) * 1968-01-26 1970-07-01 Ferranti Ltd Improvements relating to Semiconductor Circuit Assemblies
US3984620A (en) * 1975-06-04 1976-10-05 Raytheon Company Integrated circuit chip test and assembly package
US4862243A (en) * 1987-06-01 1989-08-29 Texas Instruments Incorporated Scalable fuse link element
US4937653A (en) * 1988-07-21 1990-06-26 American Telephone And Telegraph Company Semiconductor integrated circuit chip-to-chip interconnection scheme
US5048744A (en) * 1988-12-23 1991-09-17 International Business Machines Corporation Palladium enhanced fluxless soldering and bonding of semiconductor device contacts
US5358909A (en) * 1991-02-27 1994-10-25 Nippon Steel Corporation Method of manufacturing field-emitter
US5177439A (en) * 1991-08-30 1993-01-05 U.S. Philips Corporation Probe card for testing unencapsulated semiconductor devices

Also Published As

Publication number Publication date
US5453404A (en) 1995-09-26
JP3699978B2 (ja) 2005-09-28
WO1994009513A1 (en) 1994-04-28
EP0664925A1 (de) 1995-08-02
JPH08502146A (ja) 1996-03-05
EP0664925B1 (de) 2002-01-02
KR100307082B1 (ko) 2001-12-17
DE69331416T2 (de) 2003-04-17
EP0664925A4 (de) 1995-10-11
US5323035A (en) 1994-06-21

Similar Documents

Publication Publication Date Title
DE69331416T2 (de) Verbindungsstruktur fur integrierte schaltung und verfahren zu deren herstellung
DE69431723D1 (de) Leiterplatte und verfahren zu deren herstellung
DE69311107D1 (de) Ineinandergreifendes befestigungselement und verfahren zu deren herstellung
DE59502879D1 (de) Ausweiskarte und verfahren zu deren herstellung
DE3769400D1 (de) Verkapselte halbleiteranordnung und verfahren zu deren herstellung.
DE69411438D1 (de) Schaltungsanordnungen und Verfahren zu deren Herstellung
DE69128334D1 (de) Integrierte Schaltung und Verfahren zu deren Herstellung
DE69616516D1 (de) Wasserschutzzusammensetzungen und verfahren zu deren herstellung
ATE134728T1 (de) Polyesterfaser und verfahren zu deren herstellung
DE3874372T2 (de) Polysiloxan-polyimide und verfahren zu deren herstellung.
DE69127799T2 (de) Kunststoffgekapseltes Halbleiterbauteil und Verfahren zu dessen Herstellung
DE59410240D1 (de) Folienleiterplatten und verfahren zu deren herstellung
DE69032446D1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
ATE220666T1 (de) 4-diphenylmethylpiperidine und verfahren zu ihrer herstellung
DE69211134T2 (de) Klebstoffe und verfahren zu deren herstellung
DE69610481D1 (de) Prostaglandine und verfahren zu deren herstellung
DE69329620T2 (de) Verbindervorrichtung und verfahren zu seiner herstellung
DE59406843D1 (de) Plastisch verformbares flächiges gebilde und verfahren zu deren herstellung
DE59404111D1 (de) Tierstreu und verfahren zu deren herstellung
DE59208833D1 (de) Leistungs-halbleiterbauelement und verfahren zu dessen herstellung
DE59403517D1 (de) Mikroelektronische Schaltungsstruktur und Verfahren zu deren Herstellung
DE69224978D1 (de) Optisches halbleiter-bauteil und verfahren zu seiner herstellung
ATA27890A (de) Tierstreu und verfahren zu deren herstellung
DE69013358T2 (de) Fluorokohlenstoffverbindungen und verfahren zu deren herstellung.
DE69025989T2 (de) Integrierte Halbleiterschaltung und Verfahren zu deren Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee