DE69333294D1 - Halbleiteranordnung und Verfahren zu seiner Herstellung - Google Patents
Halbleiteranordnung und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69333294D1 DE69333294D1 DE69333294T DE69333294T DE69333294D1 DE 69333294 D1 DE69333294 D1 DE 69333294D1 DE 69333294 T DE69333294 T DE 69333294T DE 69333294 T DE69333294 T DE 69333294T DE 69333294 D1 DE69333294 D1 DE 69333294D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04630792A JP3250673B2 (ja) | 1992-01-31 | 1992-01-31 | 半導体素子基体とその作製方法 |
JP4630792 | 1992-01-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69333294D1 true DE69333294D1 (de) | 2003-12-18 |
DE69333294T2 DE69333294T2 (de) | 2004-09-09 |
Family
ID=12743539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69333294T Expired - Fee Related DE69333294T2 (de) | 1992-01-31 | 1993-01-29 | Halbleiteranordnung und Verfahren zu seiner Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5492859A (de) |
EP (1) | EP0553855B1 (de) |
JP (1) | JP3250673B2 (de) |
DE (1) | DE69333294T2 (de) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1347505A3 (de) * | 1991-02-15 | 2004-10-20 | Canon Kabushiki Kaisha | Verfahren zur Vorbereitung einer Halbleitervorrichtung unter Verwendung der Ätzlösung |
EP1179842A3 (de) * | 1992-01-31 | 2002-09-04 | Canon Kabushiki Kaisha | Halbleitersubstrat und Herstellungsverfahren |
US6004865A (en) * | 1993-09-06 | 1999-12-21 | Hitachi, Ltd. | Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator |
JP3250721B2 (ja) * | 1995-12-12 | 2002-01-28 | キヤノン株式会社 | Soi基板の製造方法 |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US6054363A (en) * | 1996-11-15 | 2000-04-25 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
DE69728022T2 (de) * | 1996-12-18 | 2004-08-12 | Canon K.K. | Vefahren zum Herstellen eines Halbleiterartikels unter Verwendung eines Substrates mit einer porösen Halbleiterschicht |
US6756289B1 (en) | 1996-12-27 | 2004-06-29 | Canon Kabushiki Kaisha | Method of producing semiconductor member and method of producing solar cell |
EP0851513B1 (de) * | 1996-12-27 | 2007-11-21 | Canon Kabushiki Kaisha | Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle |
US6143628A (en) * | 1997-03-27 | 2000-11-07 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
JP3985065B2 (ja) | 1997-05-14 | 2007-10-03 | 忠弘 大見 | 多孔質シリコン基板の形成方法及び多孔質シリコン基板の形成装置 |
EP0895282A3 (de) | 1997-07-30 | 2000-01-26 | Canon Kabushiki Kaisha | Verfahren zur Herstellung eines SOI-Substrates mittels eines Bond-Verfahrens und dadurch hergestelltes SOI-Substrat |
DE19803013B4 (de) * | 1998-01-27 | 2005-02-03 | Robert Bosch Gmbh | Verfahren zum Ablösen einer Epitaxieschicht oder eines Schichtsystems und nachfolgendem Aufbringen auf einen alternativen Träger |
EP0996145A3 (de) * | 1998-09-04 | 2000-11-08 | Canon Kabushiki Kaisha | Verfahren zur Herstellung von Halbleitersubstraten |
JP3903215B2 (ja) * | 1998-11-24 | 2007-04-11 | ダイキン工業株式会社 | エッチング液 |
US6080683A (en) * | 1999-03-22 | 2000-06-27 | Special Materials Research And Technology, Inc. | Room temperature wet chemical growth process of SiO based oxides on silicon |
US6593077B2 (en) | 1999-03-22 | 2003-07-15 | Special Materials Research And Technology, Inc. | Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate |
US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6858462B2 (en) * | 2000-04-11 | 2005-02-22 | Gratings, Inc. | Enhanced light absorption of solar cells and photodetectors by diffraction |
JP2004503920A (ja) * | 2000-05-31 | 2004-02-05 | モトローラ・インコーポレイテッド | 半導体デバイスおよび該半導体デバイスを製造する方法 |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
WO2002009187A2 (en) * | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6493497B1 (en) | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6559471B2 (en) | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
JP4511092B2 (ja) * | 2000-12-11 | 2010-07-28 | セイコーエプソン株式会社 | 半導体素子の製造方法 |
KR20020060457A (ko) * | 2001-01-11 | 2002-07-18 | 송오성 | 에스오아이 기판의 제조방법 |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6613697B1 (en) | 2001-06-26 | 2003-09-02 | Special Materials Research And Technology, Inc. | Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof |
US20030010992A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Semiconductor structure and method for implementing cross-point switch functionality |
US6531740B2 (en) | 2001-07-17 | 2003-03-11 | Motorola, Inc. | Integrated impedance matching and stability network |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6855992B2 (en) * | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US20030036217A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microcavity semiconductor laser coupled to a waveguide |
KR20030032133A (ko) * | 2001-10-10 | 2003-04-26 | 유종훈 | 비정질실리콘 박막층이 증착된 다공질실리콘 반도체의제조방법 |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
KR20030064536A (ko) * | 2002-01-28 | 2003-08-02 | 텔레포스 주식회사 | 산화된 다공성 실리콘층을 이용한 고주파 소자 |
KR100475077B1 (ko) * | 2002-05-31 | 2005-03-10 | 삼성전자주식회사 | 캐패시터의 유전막 형성방법 |
US20040012037A1 (en) * | 2002-07-18 | 2004-01-22 | Motorola, Inc. | Hetero-integration of semiconductor materials on silicon |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
US20040070312A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Integrated circuit and process for fabricating the same |
US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US6965128B2 (en) * | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US20040164315A1 (en) * | 2003-02-25 | 2004-08-26 | Motorola, Inc. | Structure and device including a tunneling piezoelectric switch and method of forming same |
US7592239B2 (en) | 2003-04-30 | 2009-09-22 | Industry University Cooperation Foundation-Hanyang University | Flexible single-crystal film and method of manufacturing the same |
JP4959552B2 (ja) * | 2004-04-28 | 2012-06-27 | アイユーシーエフ‐エイチワイユー | 可撓性単結晶フィルム及びその製造方法 |
KR20060081296A (ko) * | 2005-01-08 | 2006-07-12 | 삼성코닝 주식회사 | 실리콘 필름의 제조방법 |
FR2886051B1 (fr) * | 2005-05-20 | 2007-08-10 | Commissariat Energie Atomique | Procede de detachement d'un film mince |
US20070111468A1 (en) * | 2005-07-19 | 2007-05-17 | The Regents Of The University Of California | Method for fabricating dislocation-free stressed thin films |
EP1926132A1 (de) * | 2006-11-23 | 2008-05-28 | S.O.I.Tec Silicon on Insulator Technologies | Chromfreie Ätzlösung für Si-Substrate und SiGe-substrate, Verfahren zum Präparieren von Defekten diese Ätzlösung verwendend und Verfahren zum Behnadeln von Si-Substraten und SiGe-Substraten |
DE102007006151B4 (de) | 2007-02-07 | 2008-11-06 | Siltronic Ag | Verfahren zur Verringerung und Homogenisierung der Dicke einer Halbleiterschicht, die sich auf der Oberfläche eines elektrisch isolierenden Materials befindet |
US8871610B2 (en) * | 2008-10-02 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
FR2938120B1 (fr) * | 2008-10-31 | 2011-04-08 | Commissariat Energie Atomique | Procede de formation d'une couche monocristalline dans le domaine micro-electronique |
FR2938117B1 (fr) * | 2008-10-31 | 2011-04-15 | Commissariat Energie Atomique | Procede d'elaboration d'un substrat hybride ayant une couche continue electriquement isolante enterree |
JP5158807B2 (ja) * | 2009-02-10 | 2013-03-06 | 独立行政法人産業技術総合研究所 | 光電変換素子およびその製造方法 |
FR2953640B1 (fr) | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
US9287353B2 (en) * | 2010-11-30 | 2016-03-15 | Kyocera Corporation | Composite substrate and method of manufacturing the same |
TWI642086B (zh) * | 2014-02-18 | 2018-11-21 | 日商日本碍子股份有限公司 | Substrate substrate and method for manufacturing composite substrate for semiconductor |
US10553474B1 (en) * | 2018-08-29 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a semiconductor-on-insulator (SOI) substrate |
US11232974B2 (en) * | 2018-11-30 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication method of metal-free SOI wafer |
Family Cites Families (10)
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US3929529A (en) * | 1974-12-09 | 1975-12-30 | Ibm | Method for gettering contaminants in monocrystalline silicon |
US4628591A (en) * | 1984-10-31 | 1986-12-16 | Texas Instruments Incorporated | Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon |
JPH0624231B2 (ja) * | 1985-06-13 | 1994-03-30 | 沖電気工業株式会社 | 半導体装置の製造方法 |
FR2620571B1 (fr) * | 1987-09-11 | 1990-01-12 | France Etat | Procede de fabrication d'une structure de silicium sur isolant |
US5147808A (en) * | 1988-11-02 | 1992-09-15 | Universal Energy Systems, Inc. | High energy ion implanted silicon on insulator structure |
US5094697A (en) * | 1989-06-16 | 1992-03-10 | Canon Kabushiki Kaisha | Photovoltaic device and method for producing the same |
US5013681A (en) * | 1989-09-29 | 1991-05-07 | The United States Of America As Represented By The Secretary Of The Navy | Method of producing a thin silicon-on-insulator layer |
DE69133359T2 (de) * | 1990-08-03 | 2004-12-16 | Canon K.K. | Verfahren zur Herstellung eines SOI-Substrats |
US5240876A (en) * | 1991-02-22 | 1993-08-31 | Harris Corporation | Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process |
JP3112106B2 (ja) * | 1991-10-11 | 2000-11-27 | キヤノン株式会社 | 半導体基材の作製方法 |
-
1992
- 1992-01-31 JP JP04630792A patent/JP3250673B2/ja not_active Expired - Fee Related
-
1993
- 1993-01-29 EP EP93101416A patent/EP0553855B1/de not_active Expired - Lifetime
- 1993-01-29 DE DE69333294T patent/DE69333294T2/de not_active Expired - Fee Related
-
1995
- 1995-01-06 US US08/369,325 patent/US5492859A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3250673B2 (ja) | 2002-01-28 |
DE69333294T2 (de) | 2004-09-09 |
EP0553855A3 (en) | 1997-09-10 |
JPH05275329A (ja) | 1993-10-22 |
US5492859A (en) | 1996-02-20 |
EP0553855B1 (de) | 2003-11-12 |
EP0553855A2 (de) | 1993-08-04 |
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