US5614018A
(en)
*
|
1991-12-13 |
1997-03-25 |
Symetrix Corporation |
Integrated circuit capacitors and process for making the same
|
EP0568064B1
(de)
*
|
1992-05-01 |
1999-07-14 |
Texas Instruments Incorporated |
Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten
|
DE69404189T2
(de)
*
|
1993-03-31 |
1998-01-08 |
Texas Instruments Inc |
Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
|
US5392189A
(en)
|
1993-04-02 |
1995-02-21 |
Micron Semiconductor, Inc. |
Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
|
US6791131B1
(en)
*
|
1993-04-02 |
2004-09-14 |
Micron Technology, Inc. |
Method for forming a storage cell capacitor compatible with high dielectric constant materials
|
US6531730B2
(en)
|
1993-08-10 |
2003-03-11 |
Micron Technology, Inc. |
Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
|
JP3954390B2
(ja)
*
|
1994-01-13 |
2007-08-08 |
ローム株式会社 |
誘電体キャパシタ
|
JP3954635B2
(ja)
*
|
1994-01-13 |
2007-08-08 |
ローム株式会社 |
誘電体キャパシタの製造方法
|
JP3981142B2
(ja)
*
|
1994-01-13 |
2007-09-26 |
ローム株式会社 |
強誘電体キャパシタおよびその製造方法
|
US6052271A
(en)
|
1994-01-13 |
2000-04-18 |
Rohm Co., Ltd. |
Ferroelectric capacitor including an iridium oxide layer in the lower electrode
|
JP3954339B2
(ja)
*
|
1994-01-13 |
2007-08-08 |
ローム株式会社 |
誘電体キャパシタ
|
US5760432A
(en)
*
|
1994-05-20 |
1998-06-02 |
Kabushiki Kaisha Toshiba |
Thin film strained layer ferroelectric capacitors
|
JP3407409B2
(ja)
*
|
1994-07-27 |
2003-05-19 |
富士通株式会社 |
高誘電率薄膜の製造方法
|
US5622893A
(en)
*
|
1994-08-01 |
1997-04-22 |
Texas Instruments Incorporated |
Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
|
US5635741A
(en)
*
|
1994-09-30 |
1997-06-03 |
Texas Instruments Incorporated |
Barium strontium titanate (BST) thin films by erbium donor doping
|
US5541807A
(en)
*
|
1995-03-17 |
1996-07-30 |
Evans, Jr.; Joseph T. |
Ferroelectric based capacitor for use in memory systems and method for fabricating the same
|
KR0144932B1
(ko)
*
|
1995-01-26 |
1998-07-01 |
김광호 |
반도체 장치의 캐패시터 및 그 제조방법
|
KR100360468B1
(ko)
*
|
1995-03-20 |
2003-01-24 |
삼성전자 주식회사 |
강유전성박막제조방법및이를적용한캐패시터및그제조방법
|
US6088216A
(en)
*
|
1995-04-28 |
2000-07-11 |
International Business Machines Corporation |
Lead silicate based capacitor structures
|
US5663088A
(en)
*
|
1995-05-19 |
1997-09-02 |
Micron Technology, Inc. |
Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
|
JP3274326B2
(ja)
*
|
1995-09-08 |
2002-04-15 |
株式会社東芝 |
半導体装置およびその製造方法
|
US5786248A
(en)
*
|
1995-10-12 |
1998-07-28 |
Micron Technology, Inc. |
Semiconductor processing method of forming a tantalum oxide containing capacitor
|
KR100215861B1
(ko)
*
|
1996-03-13 |
1999-08-16 |
구본준 |
유전체 박막 제조방법 및 이를 이용한 반도체 장치제조방법
|
US5838605A
(en)
*
|
1996-03-20 |
1998-11-17 |
Ramtron International Corporation |
Iridium oxide local interconnect
|
JPH09331020A
(ja)
*
|
1996-06-07 |
1997-12-22 |
Sharp Corp |
誘電体薄膜キャパシタ素子及びその製造方法
|
US5843830A
(en)
|
1996-06-26 |
1998-12-01 |
Micron Technology, Inc. |
Capacitor, and methods for forming a capacitor
|
US5887324A
(en)
*
|
1996-08-30 |
1999-03-30 |
The Whitaker Corporation |
Electrical terminal with integral capacitive filter
|
US6251720B1
(en)
|
1996-09-27 |
2001-06-26 |
Randhir P. S. Thakur |
High pressure reoxidation/anneal of high dielectric constant materials
|
US5978207A
(en)
*
|
1996-10-30 |
1999-11-02 |
The Research Foundation Of The State University Of New York |
Thin film capacitor
|
KR100234393B1
(ko)
*
|
1996-11-05 |
1999-12-15 |
윤종용 |
반도체 장치의 강유전체 커패시터 및 그 제조방법
|
JP3011122B2
(ja)
*
|
1996-12-03 |
2000-02-21 |
住友電気工業株式会社 |
積層型酸化物絶縁膜
|
JPH10261770A
(ja)
*
|
1997-03-21 |
1998-09-29 |
Sharp Corp |
半導体メモリ素子の製造方法
|
US5773314A
(en)
*
|
1997-04-25 |
1998-06-30 |
Motorola, Inc. |
Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells
|
US5910880A
(en)
*
|
1997-08-20 |
1999-06-08 |
Micron Technology, Inc. |
Semiconductor circuit components and capacitors
|
JP3917272B2
(ja)
*
|
1997-11-04 |
2007-05-23 |
株式会社日立製作所 |
半導体メモリ
|
WO1999025014A1
(fr)
*
|
1997-11-10 |
1999-05-20 |
Hitachi, Ltd. |
Element dielectrique et mode de fabrication
|
US6074885A
(en)
*
|
1997-11-25 |
2000-06-13 |
Radiant Technologies, Inc |
Lead titanate isolation layers for use in fabricating PZT-based capacitors and similar structures
|
JP3974697B2
(ja)
*
|
1997-11-28 |
2007-09-12 |
ローム株式会社 |
キャパシタおよびその製法
|
US5998225A
(en)
*
|
1997-12-17 |
1999-12-07 |
Texas Instruments Incorporated |
Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing
|
US6171898B1
(en)
|
1997-12-17 |
2001-01-09 |
Texas Instruments Incorporated |
Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing
|
US6180446B1
(en)
|
1997-12-17 |
2001-01-30 |
Texas Instruments Incorporated |
Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing
|
US6184074B1
(en)
|
1997-12-17 |
2001-02-06 |
Texas Instruments Incorporated |
Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS
|
US6911371B2
(en)
|
1997-12-19 |
2005-06-28 |
Micron Technology, Inc. |
Capacitor forming methods with barrier layers to threshold voltage shift inducing material
|
US6165833A
(en)
*
|
1997-12-19 |
2000-12-26 |
Micron Technology, Inc. |
Semiconductor processing method of forming a capacitor
|
KR100436059B1
(ko)
*
|
1997-12-30 |
2004-12-17 |
주식회사 하이닉스반도체 |
강유전체 캐패시터 형성 방법
|
KR100275726B1
(ko)
|
1997-12-31 |
2000-12-15 |
윤종용 |
강유전체 메모리 장치 및 그 제조 방법
|
JP3183243B2
(ja)
*
|
1998-02-25 |
2001-07-09 |
日本電気株式会社 |
薄膜キャパシタ及びその製造方法
|
US6162744A
(en)
*
|
1998-02-28 |
2000-12-19 |
Micron Technology, Inc. |
Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
|
US6191443B1
(en)
|
1998-02-28 |
2001-02-20 |
Micron Technology, Inc. |
Capacitors, methods of forming capacitors, and DRAM memory cells
|
US6156638A
(en)
*
|
1998-04-10 |
2000-12-05 |
Micron Technology, Inc. |
Integrated circuitry and method of restricting diffusion from one material to another
|
US6730559B2
(en)
|
1998-04-10 |
2004-05-04 |
Micron Technology, Inc. |
Capacitors and methods of forming capacitors
|
US6165834A
(en)
*
|
1998-05-07 |
2000-12-26 |
Micron Technology, Inc. |
Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
|
US6255186B1
(en)
|
1998-05-21 |
2001-07-03 |
Micron Technology, Inc. |
Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
|
EP1103067A1
(de)
*
|
1998-07-06 |
2001-05-30 |
Siemens Aktiengesellschaft |
Dram-speicherkondensator und verfahren zu dessen herstellung
|
KR100341120B1
(ko)
|
1998-07-20 |
2002-12-26 |
주식회사 현대 디스플레이 테크놀로지 |
액정표시소자
|
US6128178A
(en)
*
|
1998-07-20 |
2000-10-03 |
International Business Machines Corporation |
Very thin film capacitor for dynamic random access memory (DRAM)
|
TW396502B
(en)
|
1998-10-27 |
2000-07-01 |
Prec Instr Devl Ctr Nsc Execut |
capacitor containing amorphous and poly-crystalline ferroelectric films, its fabrication, and method for forming the amorphous ferroelectric film
|
IL132834A
(en)
*
|
1998-11-23 |
2006-06-11 |
Micro Coating Technologies |
Production of capacitors with a thin layer
|
US6433993B1
(en)
*
|
1998-11-23 |
2002-08-13 |
Microcoating Technologies, Inc. |
Formation of thin film capacitors
|
WO2000038247A1
(en)
*
|
1998-12-18 |
2000-06-29 |
Infineon Technologies Ag |
Reduced diffusion of a mobile specie from a metal oxide ceramic
|
US6952029B1
(en)
*
|
1999-01-08 |
2005-10-04 |
Micron Technology, Inc. |
Thin film capacitor with substantially homogenous stoichiometry
|
US6541806B2
(en)
|
1999-01-14 |
2003-04-01 |
Symetrix Corporation |
Ferroelectric device with capping layer and method of making same
|
US6319764B1
(en)
*
|
1999-08-25 |
2001-11-20 |
Micron Technology, Inc. |
Method of forming haze-free BST films
|
US6943392B2
(en)
*
|
1999-08-30 |
2005-09-13 |
Micron Technology, Inc. |
Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
|
KR100335494B1
(ko)
*
|
1999-10-30 |
2002-05-08 |
윤종용 |
Bst 유전막에 구리를 함유한 커패시터 및 그 제조방법
|
DE19959711A1
(de)
|
1999-12-10 |
2001-06-21 |
Infineon Technologies Ag |
Verfahren zur Herstellung einer strukturierten Metallschicht
|
KR100353809B1
(ko)
*
|
1999-12-28 |
2002-09-26 |
주식회사 하이닉스반도체 |
강유전체 캐패시터의 제조 방법
|
US6801422B2
(en)
*
|
1999-12-28 |
2004-10-05 |
Intel Corporation |
High performance capacitor
|
US7005695B1
(en)
|
2000-02-23 |
2006-02-28 |
Micron Technology, Inc. |
Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
|
US6750502B1
(en)
|
2000-03-21 |
2004-06-15 |
Micron Technology, Inc. |
Technique to quench electrical defects in aluminum oxide film
|
US6724611B1
(en)
*
|
2000-03-29 |
2004-04-20 |
Intel Corporation |
Multi-layer chip capacitor
|
KR100372018B1
(ko)
*
|
2000-04-25 |
2003-02-14 |
주식회사 에버테크 |
반도체 메모리 소자의 캐패시터 및 그 제조 방법
|
US6558517B2
(en)
*
|
2000-05-26 |
2003-05-06 |
Micron Technology, Inc. |
Physical vapor deposition methods
|
US6617206B1
(en)
*
|
2000-06-07 |
2003-09-09 |
Micron Technology, Inc. |
Method of forming a capacitor structure
|
JP2004519864A
(ja)
*
|
2000-08-24 |
2004-07-02 |
コバ・テクノロジーズ・インコーポレイテッド |
シングルトランジスタ希土類亜マンガン酸塩強誘電体不揮発性メモリセル
|
US6451646B1
(en)
*
|
2000-08-30 |
2002-09-17 |
Micron Technology, Inc. |
High-k dielectric materials and processes for manufacturing them
|
US6465297B1
(en)
*
|
2000-10-05 |
2002-10-15 |
Motorola, Inc. |
Method of manufacturing a semiconductor component having a capacitor
|
JP2002184951A
(ja)
*
|
2000-12-15 |
2002-06-28 |
Mitsubishi Electric Corp |
容量素子を有する半導体装置およびその製造方法
|
US7378719B2
(en)
*
|
2000-12-20 |
2008-05-27 |
Micron Technology, Inc. |
Low leakage MIM capacitor
|
JP2002208678A
(ja)
*
|
2001-01-11 |
2002-07-26 |
Fujitsu Ltd |
半導体装置及びその製造方法
|
US20020164850A1
(en)
|
2001-03-02 |
2002-11-07 |
Gnadinger Alfred P. |
Single transistor rare earth manganite ferroelectric nonvolatile memory cell
|
US6541280B2
(en)
*
|
2001-03-20 |
2003-04-01 |
Motorola, Inc. |
High K dielectric film
|
US6770923B2
(en)
*
|
2001-03-20 |
2004-08-03 |
Freescale Semiconductor, Inc. |
High K dielectric film
|
US6563161B2
(en)
|
2001-03-22 |
2003-05-13 |
Winbond Electronics Corporation |
Memory-storage node and the method of fabricating the same
|
US6489645B1
(en)
*
|
2001-07-03 |
2002-12-03 |
Matsushita Electric Industrial Co., Ltd. |
Integrated circuit device including a layered superlattice material with an interface buffer layer
|
US6838122B2
(en)
|
2001-07-13 |
2005-01-04 |
Micron Technology, Inc. |
Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
|
US20030017266A1
(en)
*
|
2001-07-13 |
2003-01-23 |
Cem Basceri |
Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
|
US7011978B2
(en)
*
|
2001-08-17 |
2006-03-14 |
Micron Technology, Inc. |
Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
|
KR100427030B1
(ko)
*
|
2001-08-27 |
2004-04-14 |
주식회사 하이닉스반도체 |
다성분계 박막의 형성 방법 및 그를 이용한 커패시터의제조 방법
|
US7295586B2
(en)
*
|
2002-02-21 |
2007-11-13 |
Finisar Corporation |
Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
|
US6717266B1
(en)
*
|
2002-06-18 |
2004-04-06 |
Advanced Micro Devices, Inc. |
Use of an alloying element to form a stable oxide layer on the surface of metal features
|
US6825517B2
(en)
|
2002-08-28 |
2004-11-30 |
Cova Technologies, Inc. |
Ferroelectric transistor with enhanced data retention
|
US6714435B1
(en)
*
|
2002-09-19 |
2004-03-30 |
Cova Technologies, Inc. |
Ferroelectric transistor for storing two data bits
|
US6888736B2
(en)
|
2002-09-19 |
2005-05-03 |
Cova Technologies, Inc. |
Ferroelectric transistor for storing two data bits
|
US20040061990A1
(en)
*
|
2002-09-26 |
2004-04-01 |
Dougherty T. Kirk |
Temperature-compensated ferroelectric capacitor device, and its fabrication
|
US7031138B2
(en)
|
2002-12-09 |
2006-04-18 |
Infineon Technologies Ag |
Ferroelectric capacitor and process for its manufacture
|
JP4290421B2
(ja)
*
|
2002-12-27 |
2009-07-08 |
Necエレクトロニクス株式会社 |
半導体装置及びその製造方法
|
US6803071B1
(en)
*
|
2003-01-10 |
2004-10-12 |
The United States Of America As Represented By The Secretary Of The Army |
Paraelectric thin film semiconductor material and method for producing the same
|
WO2005083726A1
(en)
*
|
2004-02-27 |
2005-09-09 |
Energenius, Inc. |
Thin film ferroelectric composites, method of making and capacitor comprising the same
|
NO20041733L
(no)
*
|
2004-04-28 |
2005-10-31 |
Thin Film Electronics Asa |
Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
|
JP4654854B2
(ja)
*
|
2005-09-13 |
2011-03-23 |
パナソニック株式会社 |
積層コンデンサ及びモールドコンデンサ
|
JP4438963B2
(ja)
*
|
2006-11-29 |
2010-03-24 |
セイコーエプソン株式会社 |
強誘電体キャパシタ
|
KR101046729B1
(ko)
*
|
2008-04-30 |
2011-07-05 |
주식회사 하이닉스반도체 |
캐패시터 및 그의 제조 방법
|
US20100135061A1
(en)
*
|
2008-12-02 |
2010-06-03 |
Shaoping Li |
Non-Volatile Memory Cell with Ferroelectric Layer Configurations
|
KR101025523B1
(ko)
*
|
2008-12-04 |
2011-04-04 |
삼성전기주식회사 |
캐패시터
|
US20100202099A1
(en)
*
|
2009-02-12 |
2010-08-12 |
Lite-On Capital Inc. |
Thin film capacitor
|
US10056609B2
(en)
|
2011-07-11 |
2018-08-21 |
Quantumscape Corporation |
Solid state energy storage devices
|
US9087645B2
(en)
|
2012-01-30 |
2015-07-21 |
QuantrumScape Corporation |
Solid state energy storage devices
|
CN102964122A
(zh)
*
|
2012-11-23 |
2013-03-13 |
潮州三环(集团)股份有限公司 |
介电陶瓷组合物及其电子元器件制作方法
|
KR20190008050A
(ko)
*
|
2017-07-14 |
2019-01-23 |
에스케이하이닉스 주식회사 |
강유전성 메모리 소자
|
US10930751B2
(en)
|
2017-12-15 |
2021-02-23 |
Micron Technology, Inc. |
Ferroelectric assemblies
|
KR20210075401A
(ko)
*
|
2019-12-13 |
2021-06-23 |
삼성전자주식회사 |
커패시터 구조물 및 이를 포함하는 반도체 장치
|