DE69406041D1 - Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats - Google Patents

Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats

Info

Publication number
DE69406041D1
DE69406041D1 DE69406041T DE69406041T DE69406041D1 DE 69406041 D1 DE69406041 D1 DE 69406041D1 DE 69406041 T DE69406041 T DE 69406041T DE 69406041 T DE69406041 T DE 69406041T DE 69406041 D1 DE69406041 D1 DE 69406041D1
Authority
DE
Germany
Prior art keywords
polishing
semiconductor substrate
wheel
polishing wheel
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69406041T
Other languages
English (en)
Other versions
DE69406041T2 (de
Inventor
Chris Chang Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69406041D1 publication Critical patent/DE69406041D1/de
Application granted granted Critical
Publication of DE69406041T2 publication Critical patent/DE69406041T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S451/00—Abrading
    • Y10S451/921—Pad for lens shaping tool
DE69406041T 1993-04-30 1994-03-24 Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats Expired - Fee Related DE69406041T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/054,168 US5329734A (en) 1993-04-30 1993-04-30 Polishing pads used to chemical-mechanical polish a semiconductor substrate

Publications (2)

Publication Number Publication Date
DE69406041D1 true DE69406041D1 (de) 1997-11-13
DE69406041T2 DE69406041T2 (de) 1998-03-19

Family

ID=21989192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69406041T Expired - Fee Related DE69406041T2 (de) 1993-04-30 1994-03-24 Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats

Country Status (5)

Country Link
US (1) US5329734A (de)
EP (1) EP0622155B1 (de)
JP (1) JP3425216B2 (de)
DE (1) DE69406041T2 (de)
TW (1) TW228606B (de)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE37997E1 (en) * 1990-01-22 2003-02-18 Micron Technology, Inc. Polishing pad with controlled abrasion rate
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US7037403B1 (en) * 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
JP2622069B2 (ja) * 1993-06-30 1997-06-18 三菱マテリアル株式会社 研磨布のドレッシング装置
US5938504A (en) * 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
US5441598A (en) * 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
ES2137459T3 (es) * 1994-08-09 1999-12-16 Ontrak Systems Inc Pulido lineal y metodo para la planarizacion de pastillas semiconductoras.
US5593344A (en) * 1994-10-11 1997-01-14 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings and drive systems
US5571044A (en) * 1994-10-11 1996-11-05 Ontrak Systems, Inc. Wafer holder for semiconductor wafer polishing machine
US5575707A (en) * 1994-10-11 1996-11-19 Ontrak Systems, Inc. Polishing pad cluster for polishing a semiconductor wafer
US5609719A (en) * 1994-11-03 1997-03-11 Texas Instruments Incorporated Method for performing chemical mechanical polish (CMP) of a wafer
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
DE69618698T2 (de) 1995-03-28 2002-08-14 Applied Materials Inc Verfahren und Vorrichtung zur In-Situ-Kontroll und Bestimmung des Endes von chemisch-mechanischen Planiervorgänge
US6876454B1 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US5533923A (en) * 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
US5945347A (en) 1995-06-02 1999-08-31 Micron Technology, Inc. Apparatus and method for polishing a semiconductor wafer in an overhanging position
US5868605A (en) * 1995-06-02 1999-02-09 Speedfam Corporation In-situ polishing pad flatness control
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
US5897424A (en) * 1995-07-10 1999-04-27 The United States Of America As Represented By The Secretary Of Commerce Renewable polishing lap
US5658185A (en) * 1995-10-25 1997-08-19 International Business Machines Corporation Chemical-mechanical polishing apparatus with slurry removal system and method
US5609517A (en) * 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
EP0786310B1 (de) 1996-01-24 2002-12-04 Lam Research Corporation Halbleiterscheiben-Polierkopf
US5916012A (en) * 1996-04-26 1999-06-29 Lam Research Corporation Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher
US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
US5795218A (en) * 1996-09-30 1998-08-18 Micron Technology, Inc. Polishing pad with elongated microcolumns
US6012970A (en) * 1997-01-15 2000-01-11 Motorola, Inc. Process for forming a semiconductor device
US6328642B1 (en) 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
US5842910A (en) * 1997-03-10 1998-12-01 International Business Machines Corporation Off-center grooved polish pad for CMP
US5944583A (en) * 1997-03-17 1999-08-31 International Business Machines Corporation Composite polish pad for CMP
US7018282B1 (en) * 1997-03-27 2006-03-28 Koninklijke Philips Electronics N.V. Customized polishing pad for selective process performance during chemical mechanical polishing
US5857899A (en) * 1997-04-04 1999-01-12 Ontrak Systems, Inc. Wafer polishing head with pad dressing element
DE69809265T2 (de) * 1997-04-18 2003-03-27 Cabot Microelectronics Corp Polierkissen fur einen halbleitersubstrat
US6126532A (en) * 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US5921855A (en) † 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6273806B1 (en) 1997-05-15 2001-08-14 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
JPH10329007A (ja) * 1997-05-28 1998-12-15 Sony Corp 化学的機械研磨装置
US6108091A (en) 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6736714B2 (en) 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
US5913713A (en) * 1997-07-31 1999-06-22 International Business Machines Corporation CMP polishing pad backside modifications for advantageous polishing results
US5888121A (en) * 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
US6254456B1 (en) * 1997-09-26 2001-07-03 Lsi Logic Corporation Modifying contact areas of a polishing pad to promote uniform removal rates
US6074286A (en) * 1998-01-05 2000-06-13 Micron Technology, Inc. Wafer processing apparatus and method of processing a wafer utilizing a processing slurry
JP2870537B1 (ja) * 1998-02-26 1999-03-17 日本電気株式会社 研磨装置及び該装置を用いる半導体装置の製造方法
US6514301B1 (en) 1998-06-02 2003-02-04 Peripheral Products Inc. Foam semiconductor polishing belts and pads
US7718102B2 (en) * 1998-06-02 2010-05-18 Praxair S.T. Technology, Inc. Froth and method of producing froth
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6135865A (en) * 1998-08-31 2000-10-24 International Business Machines Corporation CMP apparatus with built-in slurry distribution and removal
US6203407B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
KR20000025003A (ko) * 1998-10-07 2000-05-06 윤종용 반도체 기판의 화학 기계적 연마에 사용되는 연마 패드
US6296550B1 (en) 1998-11-16 2001-10-02 Chartered Semiconductor Manufacturing Ltd. Scalable multi-pad design for improved CMP process
US6217422B1 (en) 1999-01-20 2001-04-17 International Business Machines Corporation Light energy cleaning of polishing pads
US6135863A (en) * 1999-04-20 2000-10-24 Memc Electronic Materials, Inc. Method of conditioning wafer polishing pads
US6406363B1 (en) 1999-08-31 2002-06-18 Lam Research Corporation Unsupported chemical mechanical polishing belt
US6346032B1 (en) * 1999-09-30 2002-02-12 Vlsi Technology, Inc. Fluid dispensing fixed abrasive polishing pad
US6376378B1 (en) * 1999-10-08 2002-04-23 Chartered Semiconductor Manufacturing, Ltd. Polishing apparatus and method for forming an integrated circuit
US6443809B1 (en) 1999-11-16 2002-09-03 Chartered Semiconductor Manufacturing, Ltd. Polishing apparatus and method for forming an integrated circuit
US6685537B1 (en) * 2000-06-05 2004-02-03 Speedfam-Ipec Corporation Polishing pad window for a chemical mechanical polishing tool
US6495464B1 (en) 2000-06-30 2002-12-17 Lam Research Corporation Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
US6609961B2 (en) 2001-01-09 2003-08-26 Lam Research Corporation Chemical mechanical planarization belt assembly and method of assembly
KR100497205B1 (ko) * 2001-08-02 2005-06-23 에스케이씨 주식회사 마이크로홀이 형성된 화학적 기계적 연마패드
US6837779B2 (en) * 2001-05-07 2005-01-04 Applied Materials, Inc. Chemical mechanical polisher with grooved belt
CN1328009C (zh) * 2001-08-02 2007-07-25 株式会社Skc 利用激光制造化学机械抛光垫的方法
KR100646702B1 (ko) * 2001-08-16 2006-11-17 에스케이씨 주식회사 홀 및/또는 그루브로 형성된 화학적 기계적 연마패드
KR20030015567A (ko) * 2001-08-16 2003-02-25 에스케이에버텍 주식회사 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드
US6530829B1 (en) * 2001-08-30 2003-03-11 Micron Technology, Inc. CMP pad having isolated pockets of continuous porosity and a method for using such pad
JP3843933B2 (ja) * 2002-02-07 2006-11-08 ソニー株式会社 研磨パッド、研磨装置および研磨方法
US7141155B2 (en) * 2003-02-18 2006-11-28 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US7025660B2 (en) * 2003-08-15 2006-04-11 Lam Research Corporation Assembly and method for generating a hydrodynamic air bearing
US7264536B2 (en) * 2003-09-23 2007-09-04 Applied Materials, Inc. Polishing pad with window
US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US7052996B2 (en) * 2003-11-26 2006-05-30 Intel Corporation Electrochemically polishing conductive films on semiconductor wafers
JP2005197408A (ja) * 2004-01-06 2005-07-21 Toyo Tire & Rubber Co Ltd Ｃｍｐ用研磨パッド、及びそれを用いた研磨方法
KR100727485B1 (ko) * 2005-08-09 2007-06-13 삼성전자주식회사 연마 패드 및 이를 제조하는 방법, 그리고 화학적 기계적 연마 장치 및 방법
TW200720001A (en) * 2005-08-10 2007-06-01 Rohm & Haas Elect Mat Method of forming grooves in a chemical mechanical polishing pad utilizing laser ablation
TW200720023A (en) * 2005-09-19 2007-06-01 Rohm & Haas Elect Mat A method of forming a stacked polishing pad using laser ablation
JP2007103602A (ja) * 2005-10-03 2007-04-19 Toshiba Corp 研磨パッド及び研磨装置
US20070128991A1 (en) * 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
TWI287486B (en) * 2006-05-04 2007-10-01 Iv Technologies Co Ltd Polishing pad and method thereof
US20090305610A1 (en) * 2008-06-06 2009-12-10 Applied Materials, Inc. Multiple window pad assembly
TWI409137B (zh) * 2008-06-19 2013-09-21 Bestac Advanced Material Co Ltd 研磨墊及其微型結構形成方法
TWM352127U (en) * 2008-08-29 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
TWM352126U (en) * 2008-10-23 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
WO2011059935A1 (en) * 2009-11-12 2011-05-19 3M Innovative Properties Company Rotary buffing pad
JP2010268012A (ja) * 2010-09-01 2010-11-25 Toyo Tire & Rubber Co Ltd Ｃｍｐ用研磨パッド、及びそれを用いた研磨方法
DE102012206708A1 (de) * 2012-04-24 2013-10-24 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
CN103817590A (zh) * 2012-11-16 2014-05-28 三芳化学工业股份有限公司 研磨垫、研磨装置及研磨垫的制造方法
WO2014109929A1 (en) 2013-01-11 2014-07-17 Applied Materials, Inc Chemical mechanical polishing apparatus and methods
CN104149023A (zh) * 2014-07-17 2014-11-19 湖北鼎龙化学股份有限公司 化学机械抛光垫
CN107849404A (zh) 2015-06-08 2018-03-27 艾利丹尼森公司 用于化学机械平坦化应用的粘合剂

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1195595A (fr) * 1958-05-05 1959-11-18 Perfectionnements aux meules, notamment pour le travail de la pierre
JPS5551705A (en) * 1978-10-03 1980-04-15 Agency Of Ind Science & Technol Production of nitridosulfate
US4313284A (en) * 1980-03-27 1982-02-02 Monsanto Company Apparatus for improving flatness of polished wafers
US4511605A (en) * 1980-09-18 1985-04-16 Norwood Industries, Inc. Process for producing polishing pads comprising a fully impregnated non-woven batt
JPS5914469A (ja) * 1982-07-08 1984-01-25 Disco Abrasive Sys Ltd ポリツシング装置
US4613345A (en) * 1985-08-12 1986-09-23 International Business Machines Corporation Fixed abrasive polishing media
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US4841680A (en) * 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US4821461A (en) * 1987-11-23 1989-04-18 Magnetic Peripherals Inc. Textured lapping plate and process for its manufacture
JPH03213265A (ja) * 1990-01-12 1991-09-18 Fujitsu Ltd ラップ盤の定盤
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5036630A (en) * 1990-04-13 1991-08-06 International Business Machines Corporation Radial uniformity control of semiconductor wafer polishing
US5081051A (en) * 1990-09-12 1992-01-14 Intel Corporation Method for conditioning the surface of a polishing pad
US5173441A (en) * 1991-02-08 1992-12-22 Micron Technology, Inc. Laser ablation deposition process for semiconductor manufacture
US5216843A (en) * 1992-09-24 1993-06-08 Intel Corporation Polishing pad conditioning apparatus for wafer planarization process
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations

Also Published As

Publication number Publication date
DE69406041T2 (de) 1998-03-19
TW228606B (en) 1994-08-21
US5329734A (en) 1994-07-19
JP3425216B2 (ja) 2003-07-14
JPH06333893A (ja) 1994-12-02
EP0622155B1 (de) 1997-10-08
EP0622155A1 (de) 1994-11-02

Similar Documents

Publication Publication Date Title
DE69406041T2 (de) Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats
DE69503285D1 (de) Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
DE69317805D1 (de) Substrat für eine Halbleitervorrichtung und Verfahren zur Vorbereitung desselben
DE69611851T2 (de) Haltevorrichtung für ein Substrat und Verfahren und Vorrichtung zum Polieren eines Substrates
DE69407088T2 (de) Verfahren zum Polieren eines Substrats
DE69332511T2 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69333282D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE878824T1 (de) Verfahren und Gerät zur Ätzung eines Werkstücks
DE69528611T2 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69524404T2 (de) Verfahren und vorrichtung zum polieren einer halbleiterscheibe
DE69435114D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE69412168T2 (de) Oberflächenbehandeltes Substrat und Verfahren zu seiner Herstellung
DE69817143D1 (de) Schleifmittel und verfahren zum polieren von halbleitersubstraten
DE69409005D1 (de) Verfahren zum abdichten poröser substrate
DE19580932T1 (de) Verfahren und Vorrichtung zum Polieren von Wafern
DE4433126B4 (de) Vorrichtung und Verfahren zum Ausrichten von Fahrzeugrädern
DE69330777T2 (de) Verfahren zur Verstärkung eines Halbleiterwafers und verstärkter Halbleiterwafer
DE69519460D1 (de) Verfahren zur Reinigung eines Halbleiter-Wafers
DE69508679D1 (de) Wafer und Verfahren zur Herstellung eines Wafers
DE69618882D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleitersubstraten
DE69311302T2 (de) Verfahren zur Oberflächenbehandlung eines Ventilatorstössels
DE69510261D1 (de) Vorrichtung und Verfahren zur Vermeidung von Ungleichförmigkeiten der Beschichtung eines Schlitzgiessers
DE19681430T1 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE69603569D1 (de) Verfahren zur Substratschadensreduzierung bei PECVD
DE69318649D1 (de) Verfahren und Vorrichtung zur Staubaubsaugung einer Schleifscheibe

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee