DE69410301T2 - Verfahren zur Herstellung funktioneller niedergeschlagener Schichten - Google Patents
Verfahren zur Herstellung funktioneller niedergeschlagener SchichtenInfo
- Publication number
- DE69410301T2 DE69410301T2 DE69410301T DE69410301T DE69410301T2 DE 69410301 T2 DE69410301 T2 DE 69410301T2 DE 69410301 T DE69410301 T DE 69410301T DE 69410301 T DE69410301 T DE 69410301T DE 69410301 T2 DE69410301 T2 DE 69410301T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- deposited layers
- functional deposited
- functional
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05013478A JP3093502B2 (ja) | 1993-01-29 | 1993-01-29 | 光起電力素子及びその形成方法及びその形成装置 |
JP05013562A JP3093504B2 (ja) | 1993-01-29 | 1993-01-29 | 光起電力素子及びその形成方法及びその形成装置 |
JP01356393A JP3297487B2 (ja) | 1993-01-29 | 1993-01-29 | 光起電力素子及びその形成方法及びその形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69410301D1 DE69410301D1 (de) | 1998-06-25 |
DE69410301T2 true DE69410301T2 (de) | 1998-09-24 |
Family
ID=27280268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69410301T Expired - Fee Related DE69410301T2 (de) | 1993-01-29 | 1994-01-28 | Verfahren zur Herstellung funktioneller niedergeschlagener Schichten |
Country Status (4)
Country | Link |
---|---|
US (1) | US5589007A (de) |
EP (1) | EP0609104B1 (de) |
AU (1) | AU663987B2 (de) |
DE (1) | DE69410301T2 (de) |
Families Citing this family (66)
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US5942788A (en) * | 1995-05-09 | 1999-08-24 | Minolta Co., Ltd. | Solid state image sensing device |
JP3169337B2 (ja) * | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
US5716480A (en) * | 1995-07-13 | 1998-02-10 | Canon Kabushiki Kaisha | Photovoltaic device and method of manufacturing the same |
US6273955B1 (en) * | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
JPH0992860A (ja) * | 1995-09-28 | 1997-04-04 | Canon Inc | 光起電力素子 |
JP3437386B2 (ja) * | 1996-09-05 | 2003-08-18 | キヤノン株式会社 | 光起電力素子、並びにその製造方法 |
US6159763A (en) * | 1996-09-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element |
US6159300A (en) | 1996-12-17 | 2000-12-12 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
JP3754815B2 (ja) * | 1997-02-19 | 2006-03-15 | キヤノン株式会社 | 光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法 |
CN1097299C (zh) | 1997-03-10 | 2002-12-25 | 佳能株式会社 | 淀积膜形成工艺 |
JPH1154773A (ja) * | 1997-08-01 | 1999-02-26 | Canon Inc | 光起電力素子及びその製造方法 |
AU756834B2 (en) * | 1997-08-01 | 2003-01-23 | Canon Kabushiki Kaisha | Method of producing a microcrystal semiconductor thin film |
JP2000133736A (ja) * | 1998-10-26 | 2000-05-12 | Furukawa Electric Co Ltd:The | 半導体レーザ素子の気密封止方法及び気密封止装置 |
JP3160263B2 (ja) * | 1999-05-14 | 2001-04-25 | キヤノン販売株式会社 | プラズマドーピング装置及びプラズマドーピング方法 |
JP2001288572A (ja) * | 2000-01-31 | 2001-10-19 | Canon Inc | 堆積膜形成装置および堆積膜形成方法 |
US6638359B2 (en) * | 2000-01-31 | 2003-10-28 | Canon Kabushiki Kaisha | Deposited film forming apparatus and deposited film forming method |
JP2001214276A (ja) * | 2000-01-31 | 2001-08-07 | Canon Inc | 堆積膜形成装置 |
JP2001214277A (ja) | 2000-01-31 | 2001-08-07 | Canon Inc | 堆積膜形成装置および堆積膜形成方法 |
JP3990867B2 (ja) * | 2000-01-31 | 2007-10-17 | キヤノン株式会社 | 堆積膜形成装置および堆積膜形成方法 |
JP2002020863A (ja) | 2000-05-01 | 2002-01-23 | Canon Inc | 堆積膜の形成方法及び形成装置、及び基板処理方法 |
JP4510242B2 (ja) | 2000-07-11 | 2010-07-21 | キヤノン株式会社 | 薄膜形成方法 |
JP3989205B2 (ja) * | 2000-08-31 | 2007-10-10 | 松下電器産業株式会社 | Cvd膜の形成方法 |
JP4651072B2 (ja) * | 2001-05-31 | 2011-03-16 | キヤノン株式会社 | 堆積膜形成方法、および堆積膜形成装置 |
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JP3862615B2 (ja) * | 2002-06-10 | 2006-12-27 | キヤノン株式会社 | シリコン系薄膜形成装置およびシリコン系薄膜形成方法 |
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JP2006032670A (ja) * | 2004-07-16 | 2006-02-02 | Matsushita Electric Ind Co Ltd | 半導体受光素子及びその製造方法 |
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US8951632B2 (en) | 2007-01-03 | 2015-02-10 | Applied Nanostructured Solutions, Llc | CNT-infused carbon fiber materials and process therefor |
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AU632241B2 (en) * | 1990-09-06 | 1992-12-17 | Mitsui Toatsu Chemicals Inc. | Amorphous silicon solar cell and method for manufacturing the same |
US5180434A (en) * | 1991-03-11 | 1993-01-19 | United Solar Systems Corporation | Interfacial plasma bars for photovoltaic deposition apparatus |
JPH04299576A (ja) * | 1991-03-27 | 1992-10-22 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
JP2975151B2 (ja) * | 1991-03-28 | 1999-11-10 | キヤノン株式会社 | 半導体素子の連続的製造装置 |
US5256576A (en) * | 1992-02-14 | 1993-10-26 | United Solar Systems Corporation | Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer |
-
1994
- 1994-01-28 EP EP94300674A patent/EP0609104B1/de not_active Expired - Lifetime
- 1994-01-28 DE DE69410301T patent/DE69410301T2/de not_active Expired - Fee Related
- 1994-01-31 AU AU54809/94A patent/AU663987B2/en not_active Ceased
-
1995
- 1995-09-05 US US08/523,169 patent/US5589007A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69410301D1 (de) | 1998-06-25 |
US5589007A (en) | 1996-12-31 |
AU5480994A (en) | 1994-08-04 |
EP0609104A2 (de) | 1994-08-03 |
EP0609104B1 (de) | 1998-05-20 |
EP0609104A3 (de) | 1994-12-21 |
AU663987B2 (en) | 1995-10-26 |
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