DE69413567T2 - Prozessorsystem mit ferroelektrischem Speicher - Google Patents

Prozessorsystem mit ferroelektrischem Speicher

Info

Publication number
DE69413567T2
DE69413567T2 DE69413567T DE69413567T DE69413567T2 DE 69413567 T2 DE69413567 T2 DE 69413567T2 DE 69413567 T DE69413567 T DE 69413567T DE 69413567 T DE69413567 T DE 69413567T DE 69413567 T2 DE69413567 T2 DE 69413567T2
Authority
DE
Germany
Prior art keywords
processor system
ferroelectric memory
ferroelectric
memory
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413567T
Other languages
English (en)
Other versions
DE69413567D1 (de
Inventor
Roger Cuppens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69413567D1 publication Critical patent/DE69413567D1/de
Publication of DE69413567T2 publication Critical patent/DE69413567T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
DE69413567T 1993-01-12 1994-01-06 Prozessorsystem mit ferroelektrischem Speicher Expired - Lifetime DE69413567T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93200068 1993-01-12

Publications (2)

Publication Number Publication Date
DE69413567D1 DE69413567D1 (de) 1998-11-05
DE69413567T2 true DE69413567T2 (de) 1999-06-02

Family

ID=8213562

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413567T Expired - Lifetime DE69413567T2 (de) 1993-01-12 1994-01-06 Prozessorsystem mit ferroelektrischem Speicher

Country Status (3)

Country Link
US (1) US5424976A (de)
JP (1) JP3485614B2 (de)
DE (1) DE69413567T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598366A (en) * 1995-08-16 1997-01-28 Ramtron International Corporation Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers
JP3607032B2 (ja) * 1996-06-03 2005-01-05 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ及びその駆動方法
KR100306823B1 (ko) * 1997-06-02 2001-11-30 윤종용 강유전체메모리셀들을구비한불휘발성메모리장치
US5923603A (en) 1997-08-20 1999-07-13 Micron Technology, Inc. Equilibrate circuit for dynamic plate sensing memories
US5917746A (en) * 1997-08-27 1999-06-29 Micron Technology, Inc. Cell plate structure for a ferroelectric memory
JP3961680B2 (ja) * 1998-06-30 2007-08-22 株式会社東芝 半導体記憶装置
DE10008243B4 (de) 2000-02-23 2005-09-22 Infineon Technologies Ag Integrierter Speicher mit Plattenleitungssegmenten
EP1187140A3 (de) * 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Betriebsverfahren eines Halbleiterspeichers
US6724653B1 (en) 2001-12-21 2004-04-20 Kabushiki Kaisha Toshiba Magnetic random access memory
KR100558561B1 (ko) * 2004-10-28 2006-03-10 삼성전자주식회사 반도체 메모리 장치
JP2007053321A (ja) * 2005-08-19 2007-03-01 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP5333311B2 (ja) * 2010-03-26 2013-11-06 ソニー株式会社 不揮発性記憶装置
JP2014120191A (ja) * 2012-12-19 2014-06-30 Lapis Semiconductor Co Ltd 半導体記憶装置
US9219225B2 (en) 2013-10-31 2015-12-22 Micron Technology, Inc. Multi-bit ferroelectric memory device and methods of forming the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848294A (ja) * 1981-09-16 1983-03-22 Mitsubishi Electric Corp Ｍｏｓダイナミツクメモリ
US4599709A (en) * 1984-02-17 1986-07-08 At&T Bell Laboratories Byte organized static memory
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method

Also Published As

Publication number Publication date
JP3485614B2 (ja) 2004-01-13
JPH06314494A (ja) 1994-11-08
DE69413567D1 (de) 1998-11-05
US5424976A (en) 1995-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

R082 Change of representative

Ref document number: 608012

Country of ref document: EP

Representative=s name: MUELLER-BORE & PARTNER PATENTANWAELTE, EUROPEA, DE