DE69420474T2 - Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum - Google Patents
Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-VakuumInfo
- Publication number
- DE69420474T2 DE69420474T2 DE69420474T DE69420474T DE69420474T2 DE 69420474 T2 DE69420474 T2 DE 69420474T2 DE 69420474 T DE69420474 T DE 69420474T DE 69420474 T DE69420474 T DE 69420474T DE 69420474 T2 DE69420474 T2 DE 69420474T2
- Authority
- DE
- Germany
- Prior art keywords
- rinsing
- ultra
- pumping out
- vacuum
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8493893A | 1993-06-30 | 1993-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69420474D1 DE69420474D1 (de) | 1999-10-14 |
DE69420474T2 true DE69420474T2 (de) | 2000-05-18 |
Family
ID=22188158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69420474T Expired - Fee Related DE69420474T2 (de) | 1993-06-30 | 1994-06-28 | Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum |
Country Status (5)
Country | Link |
---|---|
US (2) | US5536330A (de) |
EP (1) | EP0632144B1 (de) |
JP (1) | JPH0778775A (de) |
KR (1) | KR100336917B1 (de) |
DE (1) | DE69420474T2 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0632144B1 (de) * | 1993-06-30 | 1999-09-08 | Applied Materials, Inc. | Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum |
JP3158264B2 (ja) * | 1993-08-11 | 2001-04-23 | 東京エレクトロン株式会社 | ガス処理装置 |
WO1995020823A1 (en) * | 1994-01-27 | 1995-08-03 | Insync Systems, Inc. | Methods for improving semiconductor processing |
US5711821A (en) * | 1995-04-13 | 1998-01-27 | Texas Instruments Incorporated | Cleansing process for wafer handling implements |
US5843239A (en) * | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
US5879467A (en) * | 1997-09-02 | 1999-03-09 | Applied Materials, Inc. | Cycle purging a vacuum chamber during bakeout process |
US6054862A (en) * | 1997-09-02 | 2000-04-25 | Applied Materials, Inc. | Vacuum chamber bakeout procedure for preventing ion gauge failure |
US6105435A (en) * | 1997-10-24 | 2000-08-22 | Cypress Semiconductor Corp. | Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same |
DE19756830A1 (de) * | 1997-12-19 | 1999-07-01 | Wacker Chemie Gmbh | Vakuumtechnisches Trocknen von Halbleiterbruch |
US6596091B1 (en) * | 1998-04-29 | 2003-07-22 | Applied Materials, Inc. | Method for sweeping contaminants from a process chamber |
US6016611A (en) * | 1998-07-13 | 2000-01-25 | Applied Komatsu Technology, Inc. | Gas flow control in a substrate processing system |
US6193811B1 (en) | 1999-03-03 | 2001-02-27 | Applied Materials, Inc. | Method for improved chamber bake-out and cool-down |
US6406553B1 (en) * | 1999-08-03 | 2002-06-18 | Applied Materials, Inc. | Method to reduce contaminants from semiconductor wafers |
KR20010044998A (ko) * | 1999-11-02 | 2001-06-05 | 박종섭 | 불순물 도핑 장치의 세정방법 |
US6323463B1 (en) | 2000-03-29 | 2001-11-27 | Applied Materials, Inc. | Method and apparatus for reducing contamination in a wafer loadlock of a semiconductor wafer processing system |
US6408860B1 (en) * | 2000-09-21 | 2002-06-25 | Trw Inc. | Method for cleaning phosphorus from an MBE chamber |
US6926776B1 (en) | 2000-10-12 | 2005-08-09 | General Electric Company | Method for cleaning pressurized containers containing chlorine gas or sulfur dioxide gas |
US6635119B1 (en) | 2000-10-12 | 2003-10-21 | General Electric Company | Method of cleaning pressurized containers containing liquified petroleum gas |
US6539961B1 (en) | 2000-10-12 | 2003-04-01 | General Electric Company | System for cleaning pressurized containers such as mobile railcars |
US6758913B1 (en) | 2000-10-12 | 2004-07-06 | General Electric Company | Method of cleaning pressurized containers containing anhydrous ammonia |
US6443166B1 (en) | 2000-10-12 | 2002-09-03 | General Electric Company | Method of cleaning a pressurized container |
US6793740B1 (en) | 2000-10-12 | 2004-09-21 | General Electric Company | Method for cleaning pressurized containers containing moisture sensitive chemicals |
US6532684B1 (en) * | 2000-10-12 | 2003-03-18 | General Electric Company | System for cleaning pressurized containers |
KR100336274B1 (ko) * | 2000-12-28 | 2002-05-13 | 오학수 | 반도체 챔버내부의 불순물 제거장치 |
US20030013212A1 (en) * | 2001-07-10 | 2003-01-16 | Mitchell Bradley Dale | System and method for removing deposited material from within a semiconductor fabrication device |
US6531415B1 (en) | 2002-01-30 | 2003-03-11 | Taiwan Semiconductor Manufacturing Company | Silicon nitride furnace tube low temperature cycle purge for attenuated particle formation |
US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
EP1695369A4 (de) * | 2003-12-12 | 2009-11-04 | Semequip Inc | Verfahren und vorrichtung zum erweitern der gerätelaufzeit bei der ionenimplantation |
US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
JP4666576B2 (ja) | 2004-11-08 | 2011-04-06 | 東京エレクトロン株式会社 | セラミック溶射部材の洗浄方法、該方法を実行するためのプログラム、記憶媒体、及びセラミック溶射部材 |
US8460519B2 (en) * | 2005-10-28 | 2013-06-11 | Applied Materials Inc. | Protective offset sputtering |
US7884032B2 (en) * | 2005-10-28 | 2011-02-08 | Applied Materials, Inc. | Thin film deposition |
US8454804B2 (en) * | 2005-10-28 | 2013-06-04 | Applied Materials Inc. | Protective offset sputtering |
US7846257B2 (en) * | 2005-12-14 | 2010-12-07 | Tokyo Electron Limited | Method for cleaning substrate processing apparatus, substrate processing apparatus, program and recording medium having program recorded therein |
WO2008030501A2 (en) * | 2006-09-06 | 2008-03-13 | Ultra Clean Holdings, Incorporated | Pre-certified process chamber and method |
JP4605718B2 (ja) * | 2006-09-14 | 2011-01-05 | 株式会社不二越 | 真空浸炭炉加熱室の前処理方法 |
US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
JP5064119B2 (ja) * | 2007-06-07 | 2012-10-31 | 東京エレクトロン株式会社 | 真空引き方法及び記憶媒体 |
US7611930B2 (en) * | 2007-08-17 | 2009-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device |
US7875125B2 (en) * | 2007-09-21 | 2011-01-25 | Semequip, Inc. | Method for extending equipment uptime in ion implantation |
JP4855366B2 (ja) * | 2007-10-04 | 2012-01-18 | 株式会社アルバック | 静電チャックのクリーニング方法 |
US8158530B2 (en) * | 2008-09-10 | 2012-04-17 | Globalfoundries Inc. | Methods for retaining metal-comprising materials using liquid chemistry dispense systems from which oxygen has been removed |
US20120298998A1 (en) * | 2011-05-25 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device |
US9595695B2 (en) | 2012-06-13 | 2017-03-14 | Joled Inc. | Method for removing impurities from inside of vacuum chamber, method for using vacuum apparatus, and method for manufacturing product |
CN103853055B (zh) * | 2012-11-28 | 2016-12-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室烘烤的实时控制方法及装置 |
CN103050267B (zh) * | 2012-12-31 | 2016-01-20 | 厦门钨业股份有限公司 | 一种基于细粉热处理的烧结Nd-Fe-B系磁铁制作方法 |
US20150360247A1 (en) * | 2013-01-22 | 2015-12-17 | Essilor International (Compagnie Generale D'optique) | Machine for coating an optical article with a predetermined coating composition and method for using the machine |
CN103981571B (zh) * | 2014-05-28 | 2017-06-23 | 英利能源(中国)有限公司 | 一种检测多晶铸锭炉设备气密性的方法 |
JP2017017277A (ja) * | 2015-07-06 | 2017-01-19 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
US20170062192A1 (en) * | 2015-08-28 | 2017-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Film forming apparatus |
US10533264B1 (en) | 2015-12-02 | 2020-01-14 | General Graphene Corp. | Apparatus for producing graphene and other 2D materials |
US10892143B2 (en) | 2016-10-21 | 2021-01-12 | Applied Materials, Inc. | Technique to prevent aluminum fluoride build up on the heater |
KR20190002318A (ko) * | 2017-06-29 | 2019-01-08 | 가부시키가이샤 에바라 세이사꾸쇼 | 배기계 설비 시스템 |
WO2021030336A1 (en) | 2019-08-12 | 2021-02-18 | Kurt J. Lesker Company | Ultra high purity conditions for atomic scale processing |
US11757020B2 (en) * | 2020-01-31 | 2023-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method |
US11512387B2 (en) | 2020-04-13 | 2022-11-29 | Applied Materials, Inc. | Methods and apparatus for passivating a target |
US20230330716A1 (en) * | 2022-04-13 | 2023-10-19 | General Electric Company | System and method for cleaning turbine components |
Family Cites Families (18)
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US3479679A (en) * | 1967-10-23 | 1969-11-25 | Us Navy | Apparatus for cleansing a contaminated chamber |
FR2138539B1 (de) * | 1971-05-27 | 1973-05-25 | Alsthom | |
US4017330A (en) * | 1976-02-27 | 1977-04-12 | Aidlin Samuel S | Method and apparatus for internal spray cleaning of containers |
US4045253A (en) * | 1976-03-15 | 1977-08-30 | Halliburton Company | Passivating metal surfaces |
US4423622A (en) * | 1980-03-22 | 1984-01-03 | Elan Pressure Clean Limited | Pipe pressure testing and cleaning apparatus |
US4402997A (en) * | 1982-05-17 | 1983-09-06 | Motorola, Inc. | Process for improving nitride deposition on a semiconductor wafer by purging deposition tube with oxygen |
US4432808A (en) * | 1982-05-26 | 1984-02-21 | Textron Inc. | Treatment of stainless steel apparatus used in the manufacture, transport or storage of nitrogen oxides |
US4512812A (en) * | 1983-09-22 | 1985-04-23 | Varian Associates, Inc. | Method for reducing phosphorous contamination in a vacuum processing chamber |
US4590100A (en) * | 1983-10-28 | 1986-05-20 | The United States Of America As Represented By The Secretary Of The Navy | Passivation of steel with aqueous amine solutions preparatory to application of non-aqueous protective coatings |
JPS61178187U (de) * | 1985-04-26 | 1986-11-06 | ||
US4668530A (en) * | 1985-07-23 | 1987-05-26 | Massachusetts Institute Of Technology | Low pressure chemical vapor deposition of refractory metal silicides |
IT1198290B (it) * | 1986-12-02 | 1988-12-21 | Sgs Microelettronica Spa | Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori |
US4816081A (en) * | 1987-02-17 | 1989-03-28 | Fsi Corporation | Apparatus and process for static drying of substrates |
US4828760A (en) * | 1987-03-09 | 1989-05-09 | Rockwell International Corporation | Method of cleaning a spent fuel assembly |
JPH02303115A (ja) * | 1989-05-18 | 1990-12-17 | Fujitsu Ltd | 真空処理方法 |
JPH0757913B2 (ja) * | 1989-10-27 | 1995-06-21 | オリエンタルエンヂニアリング株式会社 | 脱脂洗浄方法および装置 |
US5238503A (en) * | 1991-04-09 | 1993-08-24 | International Business Machines Corporation | Device for decontaminating a semiconductor wafer container |
EP0632144B1 (de) * | 1993-06-30 | 1999-09-08 | Applied Materials, Inc. | Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum |
-
1994
- 1994-06-28 EP EP94109962A patent/EP0632144B1/de not_active Expired - Lifetime
- 1994-06-28 DE DE69420474T patent/DE69420474T2/de not_active Expired - Fee Related
- 1994-06-30 KR KR1019940015474A patent/KR100336917B1/ko not_active IP Right Cessation
- 1994-06-30 JP JP6149814A patent/JPH0778775A/ja not_active Withdrawn
-
1995
- 1995-05-15 US US08/441,239 patent/US5536330A/en not_active Expired - Fee Related
-
1996
- 1996-06-21 US US08/667,555 patent/US5759287A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0632144B1 (de) | 1999-09-08 |
JPH0778775A (ja) | 1995-03-20 |
EP0632144A3 (de) | 1996-08-07 |
KR950001936A (ko) | 1995-01-04 |
US5536330A (en) | 1996-07-16 |
EP0632144A2 (de) | 1995-01-04 |
US5759287A (en) | 1998-06-02 |
DE69420474D1 (de) | 1999-10-14 |
KR100336917B1 (ko) | 2002-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8365 | Fully valid after opposition proceedings | ||
8339 | Ceased/non-payment of the annual fee |