DE69421492D1 - Verarbeitungsverfahren für einen dünnen Film - Google Patents

Verarbeitungsverfahren für einen dünnen Film

Info

Publication number
DE69421492D1
DE69421492D1 DE69421492T DE69421492T DE69421492D1 DE 69421492 D1 DE69421492 D1 DE 69421492D1 DE 69421492 T DE69421492 T DE 69421492T DE 69421492 T DE69421492 T DE 69421492T DE 69421492 D1 DE69421492 D1 DE 69421492D1
Authority
DE
Germany
Prior art keywords
thin film
processing method
processing
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421492T
Other languages
English (en)
Other versions
DE69421492T2 (de
Inventor
Shigeki Maegawa
Tatsuo Yoshioka
Tetsuya Kawamura
Yutaka Miyata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69421492D1 publication Critical patent/DE69421492D1/de
Publication of DE69421492T2 publication Critical patent/DE69421492T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
DE69421492T 1993-08-31 1994-08-29 Verarbeitungsverfahren für einen dünnen Film Expired - Fee Related DE69421492T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5215522A JPH0766420A (ja) 1993-08-31 1993-08-31 薄膜の加工方法

Publications (2)

Publication Number Publication Date
DE69421492D1 true DE69421492D1 (de) 1999-12-09
DE69421492T2 DE69421492T2 (de) 2000-04-27

Family

ID=16673817

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421492T Expired - Fee Related DE69421492T2 (de) 1993-08-31 1994-08-29 Verarbeitungsverfahren für einen dünnen Film

Country Status (4)

Country Link
US (1) US5580801A (de)
EP (1) EP0646950B1 (de)
JP (1) JPH0766420A (de)
DE (1) DE69421492T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4427715C1 (de) * 1994-08-05 1996-02-08 Daimler Benz Ag Komposit-Struktur mit auf einer Diamantschicht und/oder einer diamantähnlichen Schicht angeordneter Halbleiterschicht sowie ein Verfahren zu deren Herstellung
JP3778456B2 (ja) * 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
US5756369A (en) * 1996-07-11 1998-05-26 Lsi Logic Corporation Rapid thermal processing using a narrowband infrared source and feedback
JPH11212934A (ja) 1998-01-23 1999-08-06 Sony Corp 情報処理装置および方法、並びに提供媒体
EP1744349A3 (de) 1998-10-05 2007-04-04 Semiconductor Energy Laboratory Co., Ltd. Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren, Strahlhomogenisierer und Herstellungsverfahren für ein Halbleiterbauelement
CN100352022C (zh) * 1999-12-10 2007-11-28 株式会社半导体能源研究所 半导体器件及其制造方法
US7050878B2 (en) 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
CN100508140C (zh) 2001-11-30 2009-07-01 株式会社半导体能源研究所 用于半导体器件的制造方法
EP1329946A3 (de) * 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Herstellungsverfahren von Halbleitervorrichtungen mit Laserkristallisationsschritt
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
TWI269922B (en) * 2002-03-07 2007-01-01 Tpo Displays Corp Manufacturing method of LCD screen
CN100565307C (zh) * 2004-02-13 2009-12-02 株式会社半导体能源研究所 半导体器件及其制备方法，液晶电视系统，和el电视系统

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409724A (en) * 1980-11-03 1983-10-18 Texas Instruments Incorporated Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
JPS60150618A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置の製造方法
US4963503A (en) * 1984-04-09 1990-10-16 Hosiden Electronics Co., Ltd. Method of manufacturing liquid crystal display device
US4585492A (en) * 1984-07-30 1986-04-29 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced hole trapping
US4619036A (en) * 1984-09-28 1986-10-28 Texas Instruments Incorporated Self-aligned low-temperature emitter drive-in
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
JPS6269680A (ja) * 1985-09-24 1987-03-30 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
JPH01162376A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
JPH0634401B2 (ja) * 1987-12-29 1994-05-02 株式会社精工舎 遮光性薄膜のエッチング方法
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
JP2775458B2 (ja) * 1989-02-20 1998-07-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2775457B2 (ja) * 1989-02-20 1998-07-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2775459B2 (ja) * 1989-02-20 1998-07-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JPH02219238A (ja) * 1989-02-20 1990-08-31 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
DE69127395T2 (de) * 1990-05-11 1998-01-02 Asahi Glass Co Ltd Verfahren zum Herstellen eines Dünnfilm-Transistors mit polykristallinem Halbleiter
DE69115118T2 (de) * 1990-05-17 1996-05-30 Sharp Kk Verfahren zum Herstellen eines Dünnfilm-Transistors.
JP2838318B2 (ja) * 1990-11-30 1998-12-16 株式会社半導体エネルギー研究所 感光装置及びその作製方法
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5365875A (en) * 1991-03-25 1994-11-22 Fuji Xerox Co., Ltd. Semiconductor element manufacturing method
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
US5326712A (en) * 1991-12-03 1994-07-05 Samsung Electronics Co., Ltd. Method for manufacturing a thin film transistor

Also Published As

Publication number Publication date
DE69421492T2 (de) 2000-04-27
EP0646950A2 (de) 1995-04-05
EP0646950A3 (de) 1995-11-08
JPH0766420A (ja) 1995-03-10
EP0646950B1 (de) 1999-11-03
US5580801A (en) 1996-12-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD, JP

8339 Ceased/non-payment of the annual fee