DE69423668T2 - Nichtflüchtige Halbleiterspeichervorrichtung mit Statusregister und Prüfverfahren dafür - Google Patents

Nichtflüchtige Halbleiterspeichervorrichtung mit Statusregister und Prüfverfahren dafür

Info

Publication number
DE69423668T2
DE69423668T2 DE69423668T DE69423668T DE69423668T2 DE 69423668 T2 DE69423668 T2 DE 69423668T2 DE 69423668 T DE69423668 T DE 69423668T DE 69423668 T DE69423668 T DE 69423668T DE 69423668 T2 DE69423668 T2 DE 69423668T2
Authority
DE
Germany
Prior art keywords
status register
memory
semiconductor memory
memory device
test method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69423668T
Other languages
English (en)
Other versions
DE69423668D1 (de
Inventor
Sinsuke Kumakura
Hirokazu Yamazaki
Hisayoshi Watanabe
Yasushi Kasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69423668D1 publication Critical patent/DE69423668D1/de
Publication of DE69423668T2 publication Critical patent/DE69423668T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56004—Pattern generation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56016—Apparatus features
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current
DE69423668T 1993-03-17 1994-02-08 Nichtflüchtige Halbleiterspeichervorrichtung mit Statusregister und Prüfverfahren dafür Expired - Lifetime DE69423668T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05713593A JP3236105B2 (ja) 1993-03-17 1993-03-17 不揮発性半導体記憶装置及びその動作試験方法

Publications (2)

Publication Number Publication Date
DE69423668D1 DE69423668D1 (de) 2000-05-04
DE69423668T2 true DE69423668T2 (de) 2000-12-28

Family

ID=13047124

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69429462T Expired - Lifetime DE69429462T2 (de) 1993-03-17 1994-02-08 Halbleitervorrichtung und Versorgungsstrom- Detektionsverfahren
DE69430598T Expired - Lifetime DE69430598T2 (de) 1993-03-17 1994-02-08 Prüfverfahren für programmierbare nicht flüchtige Halbleiterspeichervorrichtung
DE69423668T Expired - Lifetime DE69423668T2 (de) 1993-03-17 1994-02-08 Nichtflüchtige Halbleiterspeichervorrichtung mit Statusregister und Prüfverfahren dafür

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69429462T Expired - Lifetime DE69429462T2 (de) 1993-03-17 1994-02-08 Halbleitervorrichtung und Versorgungsstrom- Detektionsverfahren
DE69430598T Expired - Lifetime DE69430598T2 (de) 1993-03-17 1994-02-08 Prüfverfahren für programmierbare nicht flüchtige Halbleiterspeichervorrichtung

Country Status (5)

Country Link
US (4) US5402380A (de)
EP (4) EP0923082A3 (de)
JP (1) JP3236105B2 (de)
KR (1) KR970003811B1 (de)
DE (3) DE69429462T2 (de)

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Also Published As

Publication number Publication date
EP0923082A3 (de) 1999-10-06
EP0616335A3 (de) 1998-04-15
DE69429462T2 (de) 2002-05-23
KR940022574A (ko) 1994-10-21
US5402380A (en) 1995-03-28
JPH06267300A (ja) 1994-09-22
EP0923082A2 (de) 1999-06-16
JP3236105B2 (ja) 2001-12-10
EP0933785A1 (de) 1999-08-04
DE69430598T2 (de) 2002-08-29
US5592427A (en) 1997-01-07
EP0616335A2 (de) 1994-09-21
DE69430598D1 (de) 2002-06-13
EP0933785B1 (de) 2001-12-12
US5469394A (en) 1995-11-21
EP0935256A1 (de) 1999-08-11
US5566386A (en) 1996-10-15
DE69423668D1 (de) 2000-05-04
EP0616335B1 (de) 2000-03-29
KR970003811B1 (en) 1997-03-22
EP0935256B1 (de) 2002-05-08
DE69429462D1 (de) 2002-01-24

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