DE69424688T2 - Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt - Google Patents
Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden AbschnittInfo
- Publication number
- DE69424688T2 DE69424688T2 DE69424688T DE69424688T DE69424688T2 DE 69424688 T2 DE69424688 T2 DE 69424688T2 DE 69424688 T DE69424688 T DE 69424688T DE 69424688 T DE69424688 T DE 69424688T DE 69424688 T2 DE69424688 T2 DE 69424688T2
- Authority
- DE
- Germany
- Prior art keywords
- light emission
- semiconductor laser
- inclined section
- stepped substrate
- stepped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
- H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33754193A JP3157671B2 (ja) | 1993-12-28 | 1993-12-28 | 半導体レーザ装置と製造方法 |
JP33754293A JP2970797B2 (ja) | 1993-12-28 | 1993-12-28 | 半導体レーザ装置の製造方法 |
JP4887194A JP3246634B2 (ja) | 1994-03-18 | 1994-03-18 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69424688D1 DE69424688D1 (de) | 2000-06-29 |
DE69424688T2 true DE69424688T2 (de) | 2000-10-26 |
Family
ID=27293444
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69424689T Expired - Lifetime DE69424689T2 (de) | 1993-12-28 | 1994-11-22 | Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt |
DE69416291T Expired - Lifetime DE69416291T2 (de) | 1993-12-28 | 1994-11-22 | Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt |
DE69424688T Expired - Lifetime DE69424688T2 (de) | 1993-12-28 | 1994-11-22 | Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69424689T Expired - Lifetime DE69424689T2 (de) | 1993-12-28 | 1994-11-22 | Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt |
DE69416291T Expired - Lifetime DE69416291T2 (de) | 1993-12-28 | 1994-11-22 | Halbleiterlaser mit gestuftem Substrat zur Lichtemission aus einem schrägstehenden Abschnitt |
Country Status (3)
Country | Link |
---|---|
US (2) | US5684818A (de) |
EP (3) | EP0806823B1 (de) |
DE (3) | DE69424689T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09270558A (ja) * | 1996-03-29 | 1997-10-14 | Fuji Photo Film Co Ltd | 半導体レーザ |
JPH11112081A (ja) * | 1997-10-01 | 1999-04-23 | Mitsubishi Electric Corp | 半導体レーザ,及びその製造方法 |
JP2000323789A (ja) * | 1999-05-11 | 2000-11-24 | Nec Corp | 窓型半導体レーザおよびその製造方法 |
JP4511006B2 (ja) * | 2000-09-01 | 2010-07-28 | 独立行政法人理化学研究所 | 半導体の不純物ドーピング方法 |
JP3585817B2 (ja) * | 2000-09-04 | 2004-11-04 | ユーディナデバイス株式会社 | レーザダイオードおよびその製造方法 |
US6834068B2 (en) * | 2001-06-29 | 2004-12-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
JP2003133642A (ja) * | 2001-10-19 | 2003-05-09 | Hitachi Ltd | 半導体レーザ素子及び光電子装置 |
EP1309050A1 (de) * | 2001-11-06 | 2003-05-07 | Agilent Technologies, Inc. (a Delaware corporation) | Laservorrichtung und Verfahren |
JP2004079828A (ja) * | 2002-08-20 | 2004-03-11 | Sharp Corp | Iii−v族化合物半導体レーザ素子とその製造方法 |
WO2005033784A1 (ja) * | 2003-10-03 | 2005-04-14 | Ntt Electronics Corporation | 半導体光電子導波路 |
US7268007B2 (en) | 2003-10-10 | 2007-09-11 | Matsushita Electric Industrial Co., Ltd. | Compound semiconductor, method for manufacturing the same, semiconductor device, and method for manufacturing the same |
JP2005236024A (ja) * | 2004-02-19 | 2005-09-02 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
TWI476953B (zh) * | 2012-08-10 | 2015-03-11 | Univ Nat Taiwan | 半導體發光元件及其製作方法 |
TWI618268B (zh) | 2012-12-07 | 2018-03-11 | 晶元光電股份有限公司 | 發光裝置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6252985A (ja) * | 1985-09-02 | 1987-03-07 | Toshiba Corp | 半導体発光素子 |
US4785457A (en) * | 1987-05-11 | 1988-11-15 | Rockwell International Corporation | Heterostructure semiconductor laser |
US5065200A (en) * | 1989-12-21 | 1991-11-12 | Bell Communications Research, Inc. | Geometry dependent doping and electronic devices produced thereby |
ATE152152T1 (de) * | 1991-09-20 | 1997-05-15 | Lucky Ltd | Verfahren zur herstellung eines stark wasserabsorbierenden harzes |
EP0533197A3 (en) * | 1991-09-20 | 1993-11-03 | Fujitsu Ltd | Stripe laser diode having an improved efficiency for current confinement |
JPH065976A (ja) * | 1992-06-24 | 1994-01-14 | Fujitsu Ltd | 半導体レーザ装置の製造方法 |
JPH06140714A (ja) * | 1992-10-29 | 1994-05-20 | Fujitsu Ltd | 半導体発光装置 |
JPH06164063A (ja) * | 1992-11-20 | 1994-06-10 | Sanyo Electric Co Ltd | 可視光半導体レーザ及びその製造方法 |
-
1994
- 1994-11-10 US US08/339,213 patent/US5684818A/en not_active Expired - Lifetime
- 1994-11-22 EP EP97111173A patent/EP0806823B1/de not_active Expired - Lifetime
- 1994-11-22 DE DE69424689T patent/DE69424689T2/de not_active Expired - Lifetime
- 1994-11-22 DE DE69416291T patent/DE69416291T2/de not_active Expired - Lifetime
- 1994-11-22 EP EP94118358A patent/EP0665618B1/de not_active Expired - Lifetime
- 1994-11-22 DE DE69424688T patent/DE69424688T2/de not_active Expired - Lifetime
- 1994-11-22 EP EP97111172A patent/EP0808003B1/de not_active Expired - Lifetime
-
1997
- 1997-03-19 US US08/821,567 patent/US5799027A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0806823B1 (de) | 2000-05-24 |
EP0806823A3 (de) | 1997-11-19 |
DE69424689D1 (de) | 2000-06-29 |
US5684818A (en) | 1997-11-04 |
US5799027A (en) | 1998-08-25 |
EP0808003A3 (de) | 1997-11-26 |
EP0665618B1 (de) | 1999-01-27 |
EP0808003A2 (de) | 1997-11-19 |
EP0665618A1 (de) | 1995-08-02 |
EP0808003B1 (de) | 2000-05-24 |
DE69416291T2 (de) | 1999-06-02 |
DE69424689T2 (de) | 2000-10-26 |
DE69424688D1 (de) | 2000-06-29 |
DE69416291D1 (de) | 1999-03-11 |
EP0806823A2 (de) | 1997-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |