DE69424728T2 - Halbleiteranordnung und zugehörige Herstellungsmethode - Google Patents
Halbleiteranordnung und zugehörige HerstellungsmethodeInfo
- Publication number
- DE69424728T2 DE69424728T2 DE69424728T DE69424728T DE69424728T2 DE 69424728 T2 DE69424728 T2 DE 69424728T2 DE 69424728 T DE69424728 T DE 69424728T DE 69424728 T DE69424728 T DE 69424728T DE 69424728 T2 DE69424728 T2 DE 69424728T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- associated manufacturing
- manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5207950A JPH0766287A (ja) | 1993-08-23 | 1993-08-23 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69424728D1 DE69424728D1 (de) | 2000-07-06 |
DE69424728T2 true DE69424728T2 (de) | 2000-09-28 |
Family
ID=16548228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69424728T Expired - Fee Related DE69424728T2 (de) | 1993-08-23 | 1994-08-19 | Halbleiteranordnung und zugehörige Herstellungsmethode |
Country Status (6)
Country | Link |
---|---|
US (2) | US5723909A (de) |
EP (1) | EP0643421B1 (de) |
JP (1) | JPH0766287A (de) |
KR (1) | KR0136685B1 (de) |
CN (1) | CN1050694C (de) |
DE (1) | DE69424728T2 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5576247A (en) * | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
EP0678913A1 (de) * | 1994-04-15 | 1995-10-25 | Matsushita Electric Industrial Co., Ltd. | Herstellungsverfahren für Mehrlager-Metallisierung |
KR0159016B1 (ko) * | 1995-06-28 | 1999-02-01 | 김주용 | 반도체소자의 금속배선간 절연막의 제조방법 |
US5942802A (en) | 1995-10-09 | 1999-08-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of producing the same |
JP2975917B2 (ja) * | 1998-02-06 | 1999-11-10 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法及び半導体装置の製造装置 |
JP3426494B2 (ja) * | 1998-04-02 | 2003-07-14 | 沖電気工業株式会社 | 半導体装置の製造方法 |
US6294473B1 (en) * | 1998-06-03 | 2001-09-25 | Rodel Holdings Inc. | Method of polishing substrates comprising silicon dioxide and composition relating thereto |
US6395651B1 (en) | 1998-07-07 | 2002-05-28 | Alliedsignal | Simplified process for producing nanoporous silica |
JP3248492B2 (ja) * | 1998-08-14 | 2002-01-21 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6245690B1 (en) * | 1998-11-04 | 2001-06-12 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
US6090707A (en) * | 1999-09-02 | 2000-07-18 | Micron Technology, Inc. | Method of forming a conductive silicide layer on a silicon comprising substrate and method of forming a conductive silicide contact |
US6449132B1 (en) | 1999-10-05 | 2002-09-10 | Seagate Technology Llc | Dielectric gap material for magnetoresistive heads with conformal step coverage |
US6576980B1 (en) | 1999-11-30 | 2003-06-10 | Agere Systems, Inc. | Surface treatment anneal of hydrogenated silicon-oxy-carbide dielectric layer |
WO2001057920A1 (en) * | 2000-02-01 | 2001-08-09 | Analog Devices, Inc. | Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor |
JP3944487B2 (ja) * | 2000-04-11 | 2007-07-11 | 松下電器産業株式会社 | 半導体装置の製造装置 |
CA2413592A1 (en) | 2000-06-23 | 2002-01-03 | Nigel P. Hacker | Method to restore hydrophobicity in dielectric films and materials |
CN1689377B (zh) * | 2002-10-07 | 2010-10-13 | 统宝光电股份有限公司 | 用于制造发光显示器的方法 |
WO2004068555A2 (en) | 2003-01-25 | 2004-08-12 | Honeywell International Inc | Repair and restoration of damaged dielectric materials and films |
US7709371B2 (en) | 2003-01-25 | 2010-05-04 | Honeywell International Inc. | Repairing damage to low-k dielectric materials using silylating agents |
US20040145030A1 (en) * | 2003-01-28 | 2004-07-29 | Meagley Robert P. | Forming semiconductor structures |
JP4588304B2 (ja) * | 2003-08-12 | 2010-12-01 | Azエレクトロニックマテリアルズ株式会社 | コーティング組成物、およびそれを用いて製造した低誘電シリカ質材料 |
US8475666B2 (en) * | 2004-09-15 | 2013-07-02 | Honeywell International Inc. | Method for making toughening agent materials |
US7678712B2 (en) | 2005-03-22 | 2010-03-16 | Honeywell International, Inc. | Vapor phase treatment of dielectric materials |
US7500397B2 (en) | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
KR101293896B1 (ko) * | 2008-12-03 | 2013-08-06 | 후지쯔 가부시끼가이샤 | 반도체 장치의 제조 방법 |
CN102487004A (zh) * | 2010-12-01 | 2012-06-06 | 中芯国际集成电路制造(上海)有限公司 | 利用化学气相淀积填充隔离槽的方法 |
CN103871961B (zh) | 2012-12-17 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其制造方法 |
US8871639B2 (en) | 2013-01-04 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
US10461406B2 (en) | 2017-01-23 | 2019-10-29 | Microsoft Technology Licensing, Llc | Loop antenna with integrated proximity sensing |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4885262A (en) * | 1989-03-08 | 1989-12-05 | Intel Corporation | Chemical modification of spin-on glass for improved performance in IC fabrication |
DE3933908A1 (de) * | 1989-10-11 | 1991-04-25 | Telefunken Electronic Gmbh | Verfahren zur herstellung einer integrierten mos-halbleiteranordnung |
JPH03152957A (ja) * | 1989-11-09 | 1991-06-28 | Sony Corp | 半導体装置の製造方法 |
JP2640174B2 (ja) * | 1990-10-30 | 1997-08-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
DE4135810C2 (de) * | 1990-10-30 | 2000-04-13 | Mitsubishi Electric Corp | Halbleitereinrichtung mit einem Zwischenschichtisolierfilm und Verfahren zu deren Herstellung |
US5219791A (en) * | 1991-06-07 | 1993-06-15 | Intel Corporation | TEOS intermetal dielectric preclean for VIA formation |
EP0560617A3 (en) * | 1992-03-13 | 1993-11-24 | Kawasaki Steel Co | Method of manufacturing insulating film on semiconductor device and apparatus for carrying out the same |
US5576247A (en) * | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
-
1993
- 1993-08-23 JP JP5207950A patent/JPH0766287A/ja active Pending
-
1994
- 1994-08-10 KR KR94019713A patent/KR0136685B1/ko not_active IP Right Cessation
- 1994-08-19 EP EP94112986A patent/EP0643421B1/de not_active Expired - Lifetime
- 1994-08-19 DE DE69424728T patent/DE69424728T2/de not_active Expired - Fee Related
- 1994-08-22 CN CN94115769A patent/CN1050694C/zh not_active Expired - Fee Related
-
1996
- 1996-09-11 US US08/712,237 patent/US5723909A/en not_active Expired - Fee Related
-
1997
- 1997-07-07 US US08/888,919 patent/US5950101A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69424728D1 (de) | 2000-07-06 |
KR950007023A (ko) | 1995-03-21 |
KR0136685B1 (en) | 1998-04-29 |
EP0643421B1 (de) | 2000-05-31 |
US5950101A (en) | 1999-09-07 |
CN1109216A (zh) | 1995-09-27 |
US5723909A (en) | 1998-03-03 |
JPH0766287A (ja) | 1995-03-10 |
EP0643421A2 (de) | 1995-03-15 |
CN1050694C (zh) | 2000-03-22 |
EP0643421A3 (de) | 1995-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |