DE69501195D1 - Hybride halbleiteranordnung - Google Patents

Hybride halbleiteranordnung

Info

Publication number
DE69501195D1
DE69501195D1 DE69501195T DE69501195T DE69501195D1 DE 69501195 D1 DE69501195 D1 DE 69501195D1 DE 69501195 T DE69501195 T DE 69501195T DE 69501195 T DE69501195 T DE 69501195T DE 69501195 D1 DE69501195 D1 DE 69501195D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
hybrid semiconductor
hybrid
arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69501195T
Other languages
English (en)
Other versions
DE69501195T2 (de
Inventor
Jean-Yves Duboz
Emmanuel Rosencher
Philippe Bois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR9404168A external-priority patent/FR2718570A1/fr
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE69501195D1 publication Critical patent/DE69501195D1/de
Application granted granted Critical
Publication of DE69501195T2 publication Critical patent/DE69501195T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/381—Pitch distance
DE69501195T 1994-04-08 1995-04-07 Hybride halbleiteranordnung Expired - Fee Related DE69501195T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9404168A FR2718570A1 (fr) 1994-04-08 1994-04-08 Composant hybride semiconducteur.
FR9407573A FR2718571B1 (fr) 1994-04-08 1994-06-21 Composant hybride semiconducteur.
PCT/FR1995/000448 WO1995028006A1 (fr) 1994-04-08 1995-04-07 Composant hybride semiconducteur

Publications (2)

Publication Number Publication Date
DE69501195D1 true DE69501195D1 (de) 1998-01-22
DE69501195T2 DE69501195T2 (de) 1998-04-16

Family

ID=26231074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501195T Expired - Fee Related DE69501195T2 (de) 1994-04-08 1995-04-07 Hybride halbleiteranordnung

Country Status (5)

Country Link
US (1) US5726500A (de)
EP (1) EP0702850B1 (de)
DE (1) DE69501195T2 (de)
FR (1) FR2718571B1 (de)
WO (1) WO1995028006A1 (de)

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US5688716A (en) 1994-07-07 1997-11-18 Tessera, Inc. Fan-out semiconductor chip assembly
US6848173B2 (en) 1994-07-07 2005-02-01 Tessera, Inc. Microelectric packages having deformed bonded leads and methods therefor
US6429112B1 (en) * 1994-07-07 2002-08-06 Tessera, Inc. Multi-layer substrates and fabrication processes
US5891795A (en) * 1996-03-18 1999-04-06 Motorola, Inc. High density interconnect substrate
US5926694A (en) * 1996-07-11 1999-07-20 Pfu Limited Semiconductor device and a manufacturing method thereof
FR2756667B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques bispectral
FR2756666B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques
JPH10229129A (ja) * 1997-02-18 1998-08-25 Oki Electric Ind Co Ltd 半導体集積回路のチップレイアウト及びその検証方法
FR2761537B1 (fr) 1997-04-01 1999-06-11 Thomson Csf Laser comprenant un empilement de diodes laser epitaxiees compris entre deux miroirs de bragg
JP3030271B2 (ja) * 1997-05-19 2000-04-10 富士通株式会社 半導体部品の実装方法
US5898223A (en) * 1997-10-08 1999-04-27 Lucent Technologies Inc. Chip-on-chip IC packages
JP3068534B2 (ja) * 1997-10-14 2000-07-24 九州日本電気株式会社 半導体装置
FR2772919B1 (fr) 1997-12-23 2000-03-17 Thomson Csf Imageur infrarouge a structure quantique fonctionnant a temperature ambiante
FR2780203B1 (fr) 1998-06-23 2003-07-04 Thomson Csf Detecteur a puits quantique avec couche de stockage des electrons photoexcites
US6214716B1 (en) * 1998-09-30 2001-04-10 Micron Technology, Inc. Semiconductor substrate-based BGA interconnection and methods of farication same
US6011314A (en) * 1999-02-01 2000-01-04 Hewlett-Packard Company Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps
JP3718360B2 (ja) * 1999-02-09 2005-11-24 ローム株式会社 半導体装置
FR2808925B1 (fr) 2000-05-12 2003-08-08 Thomson Csf Detecteur optique bi-spectral
FR2811808B1 (fr) 2000-07-11 2002-10-25 Thomson Csf Dispositif d'auto-compensation pour detecteurs soustractifs
US6735387B1 (en) 2001-01-10 2004-05-11 Tim Schnell Motion detector camera
ITTO20010086A1 (it) * 2001-01-30 2002-07-30 St Microelectronics Srl Procedimento per sigillare e connettere parti di microsistemi elettromeccanici, fluidi, ottici e dispositivo cosi' ottenuto.
US6653572B2 (en) * 2001-02-07 2003-11-25 The Furukawa Electric Co., Ltd. Multilayer circuit board
DE10142531A1 (de) * 2001-08-30 2003-03-20 Philips Corp Intellectual Pty Sensoranordnung aus licht- und/oder röntgenstrahlungsempfindlichen Sensoren
US20030049925A1 (en) * 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
WO2003065453A1 (de) * 2002-01-31 2003-08-07 Micronas Gmbh Aufnahmevorrichtung für eine programmierbare, elektronische verarbeitungseinrichtung
US6836023B2 (en) * 2002-04-17 2004-12-28 Fairchild Semiconductor Corporation Structure of integrated trace of chip package
TW546794B (en) * 2002-05-17 2003-08-11 Advanced Semiconductor Eng Multichip wafer-level package and method for manufacturing the same
JP2004055628A (ja) * 2002-07-17 2004-02-19 Dainippon Printing Co Ltd ウエハレベルの半導体装置及びその作製方法
US6962835B2 (en) * 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
FR2855653B1 (fr) * 2003-05-27 2005-10-21 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
FR2855654B1 (fr) * 2003-05-27 2006-03-03 Thales Sa Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires
FR2863774B1 (fr) * 2003-12-16 2006-03-03 Thales Sa Photodetecteur a concentration de champ proche
JP4359257B2 (ja) * 2004-07-06 2009-11-04 三星電機株式会社 Ｂｇａパッケージおよびその製造方法
GB2441814B (en) * 2006-09-07 2012-04-11 Detection Technology Oy Photodiode array output signal multiplexing
FR2937792B1 (fr) * 2008-10-24 2011-03-18 Thales Sa Dispositif d'imagerie multispectral a base de multi-puits quantiques
FR2937791B1 (fr) * 2008-10-24 2010-11-26 Thales Sa Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation
US8486758B2 (en) 2010-12-20 2013-07-16 Tessera, Inc. Simultaneous wafer bonding and interconnect joining
KR20130016682A (ko) * 2011-08-08 2013-02-18 에스케이하이닉스 주식회사 듀얼 레이어 구조의 반도체칩과 듀얼 레이어 구조의 반도체칩을 갖는 패키지들 및 그 제조방법

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US3380155A (en) * 1965-05-12 1968-04-30 Sprague Electric Co Production of contact pads for semiconductors
US3823348A (en) * 1966-03-31 1974-07-09 Ibm Monolithic integrated structure including fabrication and package therefor
GB1487945A (en) * 1974-11-20 1977-10-05 Ibm Semiconductor integrated circuit devices
US4122479A (en) * 1975-01-31 1978-10-24 Hitachi, Ltd. Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body
US4250520A (en) * 1979-03-14 1981-02-10 Rca Corporation Flip chip mounted diode
JPS5952859A (ja) * 1982-09-20 1984-03-27 Nec Corp 半導体装置
US4675717A (en) * 1984-10-09 1987-06-23 American Telephone And Telegraph Company, At&T Bell Laboratories Water-scale-integrated assembly
US4774630A (en) * 1985-09-30 1988-09-27 Microelectronics Center Of North Carolina Apparatus for mounting a semiconductor chip and making electrical connections thereto
US4783594A (en) * 1987-11-20 1988-11-08 Santa Barbara Research Center Reticular detector array
FR2653229B1 (fr) * 1989-10-12 1992-01-17 Thomson Csf Detecteur capacitif d'onde electromagnetique.
FR2655434B1 (fr) * 1989-12-05 1992-02-28 Thomson Csf Dispositif optique a puits quantiques et procede de realisation.
JPH0462961A (ja) * 1990-06-29 1992-02-27 Sharp Corp 半導体装置およびその製造方法
FR2670006B1 (fr) * 1990-11-29 1993-03-12 Thomson Csf Bolometre electronique a puits quantique et application a un detecteur de rayonnements.
FR2678774B1 (fr) * 1991-07-05 1998-07-10 Thomson Csf Detecteur d'ondes electromagnetiques.
JPH0536894A (ja) * 1991-07-31 1993-02-12 Mitsubishi Electric Corp ハイブリツド型半導体装置及びその製造方法
FR2682477B1 (fr) * 1991-10-11 1994-04-15 Thomson Csf Spectrometre.
JPH05152509A (ja) * 1991-11-27 1993-06-18 Hitachi Ltd 電子回路システム装置
US5212406A (en) * 1992-01-06 1993-05-18 Eastman Kodak Company High density packaging of solid state devices
JPH05243482A (ja) * 1992-02-28 1993-09-21 Fujitsu Ltd 半導体集積回路
US5289637A (en) * 1992-03-25 1994-03-01 John Coffey Utility knife
US5300777A (en) * 1992-03-26 1994-04-05 Texas Instruments Incorporated Two color infrared detector and method
US5236871A (en) * 1992-04-29 1993-08-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing a hybridization of detector array and integrated circuit for readout
FR2693594B1 (fr) * 1992-07-07 1994-08-26 Thomson Csf Détecteur d'ondes électromagnétiques à puits quantiques.
JPH06151701A (ja) * 1992-11-09 1994-05-31 Sharp Corp 半導体装置の製造方法
JPH06236981A (ja) * 1993-02-10 1994-08-23 Fujitsu Ltd 固体撮像素子
US5449908A (en) * 1993-12-30 1995-09-12 Texas Instruments Incorporated Hybrid CCD imaging

Also Published As

Publication number Publication date
FR2718571A1 (fr) 1995-10-13
FR2718571B1 (fr) 1996-05-15
EP0702850B1 (de) 1997-12-10
US5726500A (en) 1998-03-10
WO1995028006A1 (fr) 1995-10-19
EP0702850A1 (de) 1996-03-27
DE69501195T2 (de) 1998-04-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee