DE69511241D1 - Verfahren zur herstellung integrierter schaltungsbauelemente - Google Patents

Verfahren zur herstellung integrierter schaltungsbauelemente

Info

Publication number
DE69511241D1
DE69511241D1 DE69511241T DE69511241T DE69511241D1 DE 69511241 D1 DE69511241 D1 DE 69511241D1 DE 69511241 T DE69511241 T DE 69511241T DE 69511241 T DE69511241 T DE 69511241T DE 69511241 D1 DE69511241 D1 DE 69511241D1
Authority
DE
Germany
Prior art keywords
integrated circuit
wafer
pct
circuit devices
integrated circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69511241T
Other languages
English (en)
Other versions
DE69511241T2 (de
Inventor
Pierre Badehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fotonation Ltd
Original Assignee
Shellcase Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shellcase Ltd filed Critical Shellcase Ltd
Application granted granted Critical
Publication of DE69511241D1 publication Critical patent/DE69511241D1/de
Publication of DE69511241T2 publication Critical patent/DE69511241T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01018Argon [Ar]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
DE69511241T 1994-01-17 1995-01-10 Verfahren zur herstellung integrierter schaltungsbauelemente Expired - Lifetime DE69511241T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL10835994A IL108359A (en) 1994-01-17 1994-01-17 Method and device for creating integrated circular devices
PCT/EP1995/000097 WO1995019645A1 (en) 1994-01-17 1995-01-10 Methods and apparatus for producing integrated circuit devices

Publications (2)

Publication Number Publication Date
DE69511241D1 true DE69511241D1 (de) 1999-09-09
DE69511241T2 DE69511241T2 (de) 2000-04-20

Family

ID=11065715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511241T Expired - Lifetime DE69511241T2 (de) 1994-01-17 1995-01-10 Verfahren zur herstellung integrierter schaltungsbauelemente

Country Status (13)

Country Link
US (1) US6040235A (de)
EP (1) EP0740852B1 (de)
JP (1) JPH09511097A (de)
AT (1) ATE183020T1 (de)
AU (1) AU1456495A (de)
CA (1) CA2181339A1 (de)
DE (1) DE69511241T2 (de)
IL (1) IL108359A (de)
MX (1) MX9602801A (de)
MY (1) MY130185A (de)
SG (1) SG50376A1 (de)
TW (1) TW360957B (de)
WO (1) WO1995019645A1 (de)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL108359A (en) * 1994-01-17 2001-04-30 Shellcase Ltd Method and device for creating integrated circular devices
US6127245A (en) * 1997-02-04 2000-10-03 Micron Technology, Inc. Grinding technique for integrated circuits
US5789302A (en) * 1997-03-24 1998-08-04 Siemens Aktiengesellschaft Crack stops
DE19738549C1 (de) * 1997-09-03 1998-12-10 Siemens Ag Verpackte integrierte Schaltung
FR2771551B1 (fr) * 1997-11-21 2000-01-28 Ela Medical Sa Composant microelectromecanique, tel que microcapteur ou microactionneur, reportable sur un substrat de circuit hybride
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
US6624505B2 (en) 1998-02-06 2003-09-23 Shellcase, Ltd. Packaged integrated circuits and methods of producing thereof
DE69934466T2 (de) 1998-03-16 2007-09-27 Koninklijke Philips Electronics N.V. Herstellungsverfahren von halbleiteranordnungen als chip-size packung
US6235612B1 (en) * 1998-06-10 2001-05-22 Texas Instruments Incorporated Edge bond pads on integrated circuits
FR2783354B1 (fr) * 1998-08-25 2002-07-12 Commissariat Energie Atomique Procede collectif de conditionnement d'une pluralite de composants formes initialement dans un meme substrat
FR2782840B1 (fr) 1998-08-25 2003-09-05 Commissariat Energie Atomique Circuit electronique et procede de realisation d'un circuit electronique integre comprenant au moins un composant electronique de puissance dans une plaque de substrat
US6187611B1 (en) 1998-10-23 2001-02-13 Microsemi Microwave Products, Inc. Monolithic surface mount semiconductor device and method for fabricating same
US7208725B2 (en) 1998-11-25 2007-04-24 Rohm And Haas Electronic Materials Llc Optoelectronic component with encapsulant
JP3429718B2 (ja) * 1999-10-28 2003-07-22 新光電気工業株式会社 表面実装用基板及び表面実装構造
IL133453A0 (en) 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
AU2001239182A1 (en) * 2000-02-15 2001-08-27 Osram Opto Semiconductors Gmbh Semiconductor component which emits radiation, and method for producing the same
DE20111659U1 (de) * 2000-05-23 2001-12-13 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
EP1356718A4 (de) * 2000-12-21 2009-12-02 Tessera Tech Hungary Kft Verpackte integrierte schaltungen und verfahren zu ihrer herstellung
US20020117753A1 (en) * 2001-02-23 2002-08-29 Lee Michael G. Three dimensional packaging
US7498196B2 (en) 2001-03-30 2009-03-03 Megica Corporation Structure and manufacturing method of chip scale package
US6878608B2 (en) * 2001-05-31 2005-04-12 International Business Machines Corporation Method of manufacture of silicon based package
WO2002103792A2 (en) * 2001-06-19 2002-12-27 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device
JP2003197569A (ja) * 2001-12-28 2003-07-11 Disco Abrasive Syst Ltd 半導体チップの製造方法
US6624003B1 (en) 2002-02-06 2003-09-23 Teravicta Technologies, Inc. Integrated MEMS device and package
US8614768B2 (en) * 2002-03-18 2013-12-24 Raytheon Company Miniaturized imaging device including GRIN lens optically coupled to SSID
US20060146172A1 (en) * 2002-03-18 2006-07-06 Jacobsen Stephen C Miniaturized utility device having integrated optical capabilities
US7591780B2 (en) * 2002-03-18 2009-09-22 Sterling Lc Miniaturized imaging device with integrated circuit connector system
US7787939B2 (en) * 2002-03-18 2010-08-31 Sterling Lc Miniaturized imaging device including utility aperture and SSID
EP1502135A2 (de) * 2002-04-16 2005-02-02 Xloom Photonics Ltd. Elektrooptische schaltkreise mit integriertem verbinder und verfahren zu ihrer herstellung
US20040021214A1 (en) * 2002-04-16 2004-02-05 Avner Badehi Electro-optic integrated circuits with connectors and methods for the production thereof
TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
US6908791B2 (en) * 2002-04-29 2005-06-21 Texas Instruments Incorporated MEMS device wafer-level package
US7340181B1 (en) * 2002-05-13 2008-03-04 National Semiconductor Corporation Electrical die contact structure and fabrication method
US7033664B2 (en) 2002-10-22 2006-04-25 Tessera Technologies Hungary Kft Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US7265045B2 (en) * 2002-10-24 2007-09-04 Megica Corporation Method for fabricating thermal compliant semiconductor chip wiring structure for chip scale packaging
JP4093018B2 (ja) * 2002-11-08 2008-05-28 沖電気工業株式会社 半導体装置及びその製造方法
JP2004165191A (ja) * 2002-11-08 2004-06-10 Oki Electric Ind Co Ltd 半導体装置、半導体装置の製造方法及びカメラシステム
US7067907B2 (en) * 2003-03-27 2006-06-27 Freescale Semiconductor, Inc. Semiconductor package having angulated interconnect surfaces
TWI225696B (en) * 2003-06-10 2004-12-21 Advanced Semiconductor Eng Semiconductor package and method for manufacturing the same
US6972480B2 (en) * 2003-06-16 2005-12-06 Shellcase Ltd. Methods and apparatus for packaging integrated circuit devices
WO2005004195A2 (en) 2003-07-03 2005-01-13 Shellcase Ltd. Method and apparatus for packaging integrated circuit devices
TWI226094B (en) * 2003-07-21 2005-01-01 Advanced Semiconductor Eng Process for testing IC wafer
JP4401181B2 (ja) * 2003-08-06 2010-01-20 三洋電機株式会社 半導体装置及びその製造方法
CN101174572B (zh) * 2003-08-06 2010-12-15 三洋电机株式会社 半导体装置及其制造方法
US7180149B2 (en) 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
US7612443B1 (en) 2003-09-04 2009-11-03 University Of Notre Dame Du Lac Inter-chip communication
JP4248355B2 (ja) * 2003-09-24 2009-04-02 三洋電機株式会社 半導体装置および半導体装置の製造方法
TWI226090B (en) * 2003-09-26 2005-01-01 Advanced Semiconductor Eng Transparent packaging in wafer level
US6972243B2 (en) * 2003-09-30 2005-12-06 International Business Machines Corporation Fabrication of semiconductor dies with micro-pins and structures produced therewith
US6864116B1 (en) 2003-10-01 2005-03-08 Optopac, Inc. Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
US6943423B2 (en) * 2003-10-01 2005-09-13 Optopac, Inc. Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof
EP1676160A4 (de) 2003-10-15 2008-04-09 Xloom Photonics Ltd Elektrooptische schaltkreise mit integriertem verbinder und verfahren zu ihrer herstellung
US20050156330A1 (en) * 2004-01-21 2005-07-21 Harris James M. Through-wafer contact to bonding pad
US20050196900A1 (en) * 2004-03-05 2005-09-08 Humphrey Alan E. Substrate protection system, device and method
US7122874B2 (en) * 2004-04-12 2006-10-17 Optopac, Inc. Electronic package having a sealing structure on predetermined area, and the method thereof
US6943424B1 (en) 2004-05-06 2005-09-13 Optopac, Inc. Electronic package having a patterned layer on backside of its substrate, and the fabrication thereof
US20070046314A1 (en) * 2004-07-21 2007-03-01 Advanced Semiconductor Engineering, Inc. Process for testing IC wafer
TWI250596B (en) 2004-07-23 2006-03-01 Ind Tech Res Inst Wafer-level chip scale packaging method
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
US20060043513A1 (en) * 2004-09-02 2006-03-02 Deok-Hoon Kim Method of making camera module in wafer level
KR100498708B1 (ko) * 2004-11-08 2005-07-01 옵토팩 주식회사 반도체 소자용 전자패키지 및 그 패키징 방법
FR2879183B1 (fr) * 2004-12-15 2007-04-27 Atmel Grenoble Soc Par Actions Procede de fabrication collective de microstructures a elements superposes
US7129459B2 (en) * 2004-12-23 2006-10-31 Avago Technologies General Ip (Singapore) Pte. Ltd. Wire-bondable image sensor having integral contaminant shadowing reduction structure
US20060138626A1 (en) * 2004-12-29 2006-06-29 Tessera, Inc. Microelectronic packages using a ceramic substrate having a window and a conductive surface region
TWI254467B (en) * 2005-03-01 2006-05-01 Advanced Semiconductor Eng Semiconductor package having an optical device and the method of making the same
US7285434B2 (en) * 2005-03-09 2007-10-23 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for manufacturing the same
US9457442B2 (en) * 2005-06-18 2016-10-04 Futrfab, Inc. Method and apparatus to support process tool modules in a cleanspace fabricator
US9159592B2 (en) 2005-06-18 2015-10-13 Futrfab, Inc. Method and apparatus for an automated tool handling system for a multilevel cleanspace fabricator
US7513822B2 (en) 2005-06-18 2009-04-07 Flitsch Frederick A Method and apparatus for a cleanspace fabricator
US9059227B2 (en) 2005-06-18 2015-06-16 Futrfab, Inc. Methods and apparatus for vertically orienting substrate processing tools in a clean space
US11024527B2 (en) 2005-06-18 2021-06-01 Frederick A. Flitsch Methods and apparatus for novel fabricators with Cleanspace
US10627809B2 (en) 2005-06-18 2020-04-21 Frederick A. Flitsch Multilevel fabricators
US9339900B2 (en) 2005-08-18 2016-05-17 Futrfab, Inc. Apparatus to support a cleanspace fabricator
US10651063B2 (en) 2005-06-18 2020-05-12 Frederick A. Flitsch Methods of prototyping and manufacturing with cleanspace fabricators
US20100078795A1 (en) * 2005-07-01 2010-04-01 Koninklijke Philips Electronics, N.V. Electronic device
US9601474B2 (en) 2005-07-22 2017-03-21 Invensas Corporation Electrically stackable semiconductor wafer and chip packages
US7566853B2 (en) * 2005-08-12 2009-07-28 Tessera, Inc. Image sensor employing a plurality of photodetector arrays and/or rear-illuminated architecture
DE602006020179D1 (de) 2005-11-28 2011-03-31 Nxp Bv Ransponder
TWI324800B (en) * 2005-12-28 2010-05-11 Sanyo Electric Co Method for manufacturing semiconductor device
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
CN101405084B (zh) 2006-03-20 2011-11-16 皇家飞利浦电子股份有限公司 用于电子微流体设备的系统级封装台
US7361989B1 (en) * 2006-09-26 2008-04-22 International Business Machines Corporation Stacked imager package
US7901989B2 (en) * 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7829438B2 (en) * 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US7759166B2 (en) * 2006-10-17 2010-07-20 Tessera, Inc. Microelectronic packages fabricated at the wafer level and methods therefor
TWI313050B (en) * 2006-10-18 2009-08-01 Advanced Semiconductor Eng Semiconductor chip package manufacturing method and structure thereof
US7952195B2 (en) * 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
TW200842998A (en) * 2007-04-18 2008-11-01 Siliconware Precision Industries Co Ltd Semiconductor device and manufacturing method thereof
TWI331371B (en) * 2007-04-19 2010-10-01 Siliconware Precision Industries Co Ltd Semiconductor device and manufacturing method thereof
US7835074B2 (en) 2007-06-05 2010-11-16 Sterling Lc Mini-scope for multi-directional imaging
KR101458538B1 (ko) 2007-07-27 2014-11-07 테세라, 인코포레이티드 적층형 마이크로 전자 유닛, 및 이의 제조방법
CN101861646B (zh) 2007-08-03 2015-03-18 泰塞拉公司 利用再生晶圆的堆叠封装
US8043895B2 (en) 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
US20090093137A1 (en) * 2007-10-08 2009-04-09 Xloom Communications, (Israel) Ltd. Optical communications module
US7969659B2 (en) * 2008-01-11 2011-06-28 Sterling Lc Grin lens microscope system
US7880293B2 (en) * 2008-03-25 2011-02-01 Stats Chippac, Ltd. Wafer integrated with permanent carrier and method therefor
US20090287048A1 (en) * 2008-05-16 2009-11-19 Sterling Lc Method and apparatus for imaging within a living body
US8680662B2 (en) * 2008-06-16 2014-03-25 Tessera, Inc. Wafer level edge stacking
US8690762B2 (en) 2008-06-18 2014-04-08 Raytheon Company Transparent endoscope head defining a focal length
US8486735B2 (en) 2008-07-30 2013-07-16 Raytheon Company Method and device for incremental wavelength variation to analyze tissue
US9060704B2 (en) 2008-11-04 2015-06-23 Sarcos Lc Method and device for wavelength shifted imaging
EP2406821A2 (de) * 2009-03-13 2012-01-18 Tessera, Inc. Gestapelte mikroelektronische baugruppen mit sich durch bondkontaktstellen erstreckenden durchgangslöchern
US9144664B2 (en) 2009-10-01 2015-09-29 Sarcos Lc Method and apparatus for manipulating movement of a micro-catheter
WO2011041730A2 (en) 2009-10-01 2011-04-07 Jacobsen Stephen C Light diffusion apparatus
WO2011041728A2 (en) 2009-10-01 2011-04-07 Jacobsen Stephen C Needle delivered imaging device
US8828028B2 (en) 2009-11-03 2014-09-09 Raytheon Company Suture device and method for closing a planar opening
US8624342B2 (en) 2010-11-05 2014-01-07 Invensas Corporation Rear-face illuminated solid state image sensors
US20140011323A1 (en) * 2012-07-06 2014-01-09 Frederick Flitsch Processes relating to cleanspace fabricators
US9620473B1 (en) 2013-01-18 2017-04-11 University Of Notre Dame Du Lac Quilt packaging system with interdigitated interconnecting nodules for inter-chip alignment
US20140326856A1 (en) * 2013-05-06 2014-11-06 Omnivision Technologies, Inc. Integrated circuit stack with low profile contacts
CN106469689B (zh) * 2015-08-21 2019-10-11 安世有限公司 电子元件及其形成方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1658509A (en) * 1925-10-07 1928-02-07 Wadsworth Watch Case Co Surface-ornamenting process and apparatus
US2507956A (en) * 1947-11-01 1950-05-16 Lithographic Technical Foundat Process of coating aluminum
NL81501C (de) * 1952-04-03
US2796370A (en) * 1955-03-04 1957-06-18 Charles W Ostrander Composition and method for producing corrosion resistant protective coating on aluminum and aluminum alloys
DE1591105A1 (de) * 1967-12-06 1970-09-24 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Festkoerperschaltungen
US3623961A (en) * 1968-01-12 1971-11-30 Philips Corp Method of providing an electric connection to a surface of an electronic device and device obtained by said method
US3719981A (en) * 1971-11-24 1973-03-13 Rca Corp Method of joining solder balls to solder bumps
DE2341154C2 (de) * 1973-08-14 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung
JPS5895862A (ja) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp 積層構造半導体装置
JPS61500393A (ja) * 1983-11-07 1986-03-06 ア−ビン・センサ−ズ・コ−ポレ−シヨン 光・検出器アレイモジュール及びその製造方法
GB8519373D0 (en) * 1985-08-01 1985-09-04 Unilever Plc Encapsulation of fet transducers
US4789692A (en) * 1986-08-12 1988-12-06 Morton Thiokol, Inc. Resin-immobilized biocides
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
US4862249A (en) * 1987-04-17 1989-08-29 Xoc Devices, Inc. Packaging system for stacking integrated circuits
JPH0193149A (ja) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp 半導体装置
US4794092A (en) * 1987-11-18 1988-12-27 Grumman Aerospace Corporation Single wafer moated process
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
JPH0217644A (ja) * 1988-07-06 1990-01-22 Hitachi Ltd 集積回路
US5038201A (en) * 1988-11-08 1991-08-06 Westinghouse Electric Corp. Wafer scale integrated circuit apparatus
JP2829015B2 (ja) * 1989-01-19 1998-11-25 株式会社東芝 半導体素子の加工方法
US5135890A (en) * 1989-06-16 1992-08-04 General Electric Company Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
US4992908A (en) * 1989-07-24 1991-02-12 Grumman Aerospace Corporation Integrated circuit module
JP2768988B2 (ja) * 1989-08-17 1998-06-25 三菱電機株式会社 端面部分コーティング方法
US5126286A (en) * 1990-10-05 1992-06-30 Micron Technology, Inc. Method of manufacturing edge connected semiconductor die
FR2670323B1 (fr) * 1990-12-11 1997-12-12 Thomson Csf Procede et dispositif d'interconnexion de circuits integres en trois dimensions.
US5270485A (en) * 1991-01-28 1993-12-14 Sarcos Group High density, three-dimensional, intercoupled circuit structure
JPH04346231A (ja) * 1991-05-23 1992-12-02 Canon Inc 半導体装置の製造方法
JP2967621B2 (ja) * 1991-08-27 1999-10-25 日本電気株式会社 半導体装置用パッケージの製造方法
JP2769753B2 (ja) * 1991-08-28 1998-06-25 株式会社オーク製作所 画像形成用露光装置
FR2691836B1 (fr) * 1992-05-27 1997-04-30 Ela Medical Sa Procede de fabrication d'un dispositif a semi-conducteurs comportant au moins une puce et dispositif correspondant.
US5269822A (en) * 1992-09-01 1993-12-14 Air Products And Chemicals, Inc. Process for recovering oxygen from gaseous mixtures containing water or carbon dioxide which process employs barium-containing ion transport membranes
KR100310220B1 (ko) * 1992-09-14 2001-12-17 엘란 티본 집적회로장치를제조하기위한장치및그제조방법
FR2707012B1 (de) * 1993-06-22 1995-09-29 Asulab Sa
US5376235A (en) * 1993-07-15 1994-12-27 Micron Semiconductor, Inc. Method to eliminate corrosion in conductive elements
IL108359A (en) * 1994-01-17 2001-04-30 Shellcase Ltd Method and device for creating integrated circular devices

Also Published As

Publication number Publication date
DE69511241T2 (de) 2000-04-20
ATE183020T1 (de) 1999-08-15
SG50376A1 (en) 1998-07-20
EP0740852B1 (de) 1999-08-04
MX9602801A (es) 1997-12-31
MY130185A (en) 2007-06-29
CA2181339A1 (en) 1995-07-20
US6040235A (en) 2000-03-21
TW360957B (en) 1999-06-11
JPH09511097A (ja) 1997-11-04
EP0740852A1 (de) 1996-11-06
IL108359A0 (en) 1994-04-12
WO1995019645A1 (en) 1995-07-20
IL108359A (en) 2001-04-30
AU1456495A (en) 1995-08-01

Similar Documents

Publication Publication Date Title
DE69511241D1 (de) Verfahren zur herstellung integrierter schaltungsbauelemente
GT199300053A (es) Metodo y aparato para producir dispositivos de circuito integrado
DE3578656D1 (de) Verfahren zur herstellung nitrierter sio2-schichten fuer integrierte halbleiterschaltungen.
DE3381215D1 (de) Integrierte halbleiterschaltungen und verfahren zur herstellung.
SE9500849D0 (sv) Methods for the manufacturing of micromachined structures and micromachined structures manufactured using such methods
DE3650323D1 (de) VLSI-Chip und Verfahren zur Herstellung.
DE3580188D1 (de) Textilaehnliches, zusammengesetztes mehrschichtiges gebilde, und verfahren zur herstellung desselben.
DE3581097D1 (de) Glaskeramisches material, kondensator aus diesem material und verfahren zur herstellung von letzterem.
DE3786785D1 (de) Verfahren zur herstellung von mos-bauelementen fuer integrierte schaltungen.
DE3577776D1 (de) Verfahren zur herstellung submikronischer graeben, z.b. in halbleitermaterial und nach diesem verfahren hergestellte anordnungen.
DE69012520T2 (de) Halbleiterheterostruktur und Verfahren zu ihrer Herstellung.
DE68923686D1 (de) Halbleiterkarte und verfahren zur herstellung.
MY134793A (en) Punched adhesive tape for semiconductor
MY116424A (en) Saw strip for fixing a crystal and process for cutting off wafers
DE69021998T2 (de) Verfahren zur herstellung von komplementären, integrierten halbleiterschaltungen.
DE69914902D1 (de) Verfahren zur herstellung einer ic-karte und eine solche hergestellte karte
DE3676832D1 (de) Loetverbindung zwischen chip und substrat und verfahren zur herstellung.
EP0100999A3 (en) Integrated semiconductor circuit comprising bipolar elements, and method of producing the same
TR199701313A3 (tr) Fosfolipidik bilesimin üretilmesi ve kullanilmasi için yöntem.
ATA149083A (de) Brennstoff aus saegespaenen und altoel sowie verfahren zu seiner herstellung
ATE201965T1 (de) Gemüsechips und verfahren zu ihrer herstellung
DE258396T1 (de) Herstellungsverfahren fuer gestapelte mos-bauelemente.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TESSERA TECHNOLOGIES HUNGARY KFT., BUDAPEST, HU

8327 Change in the person/name/address of the patent owner

Owner name: TESSERA TECHNOLOGIES IRELAND LIMITED, BALLYBRI, IE

R082 Change of representative

Ref document number: 740852

Country of ref document: EP

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 28217 BREMEN, DE