DE69517409T2 - Integriertes schaltungssystem zur gewinnung und speicherung von analogen signalen, mit zeitgleichen lese- und schreibspannungsprogrammverfahren - Google Patents

Integriertes schaltungssystem zur gewinnung und speicherung von analogen signalen, mit zeitgleichen lese- und schreibspannungsprogrammverfahren

Info

Publication number
DE69517409T2
DE69517409T2 DE69517409T DE69517409T DE69517409T2 DE 69517409 T2 DE69517409 T2 DE 69517409T2 DE 69517409 T DE69517409 T DE 69517409T DE 69517409 T DE69517409 T DE 69517409T DE 69517409 T2 DE69517409 T2 DE 69517409T2
Authority
DE
Germany
Prior art keywords
recovery
storage
integrated circuit
analog signals
circuit system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69517409T
Other languages
English (en)
Other versions
DE69517409D1 (de
Inventor
D Engh
Trevor Blyth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Winbond Electronics Corp
Original Assignee
Information Storage Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Information Storage Devices Inc filed Critical Information Storage Devices Inc
Application granted granted Critical
Publication of DE69517409D1 publication Critical patent/DE69517409D1/de
Publication of DE69517409T2 publication Critical patent/DE69517409T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5624—Concurrent multilevel programming and programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
DE69517409T 1994-09-14 1995-09-13 Integriertes schaltungssystem zur gewinnung und speicherung von analogen signalen, mit zeitgleichen lese- und schreibspannungsprogrammverfahren Expired - Lifetime DE69517409T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/306,266 US5629890A (en) 1994-09-14 1994-09-14 Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
PCT/US1995/011590 WO1996008823A1 (en) 1994-09-14 1995-09-13 Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method

Publications (2)

Publication Number Publication Date
DE69517409D1 DE69517409D1 (de) 2000-07-13
DE69517409T2 true DE69517409T2 (de) 2001-01-25

Family

ID=23184536

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517409T Expired - Lifetime DE69517409T2 (de) 1994-09-14 1995-09-13 Integriertes schaltungssystem zur gewinnung und speicherung von analogen signalen, mit zeitgleichen lese- und schreibspannungsprogrammverfahren

Country Status (8)

Country Link
US (4) US5629890A (de)
EP (1) EP0728361B1 (de)
JP (1) JP3587529B2 (de)
KR (1) KR100260603B1 (de)
AU (1) AU3552695A (de)
CA (1) CA2176010A1 (de)
DE (1) DE69517409T2 (de)
WO (1) WO1996008823A1 (de)

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Also Published As

Publication number Publication date
US5963462A (en) 1999-10-05
US5745414A (en) 1998-04-28
AU3552695A (en) 1996-03-29
JPH09509518A (ja) 1997-09-22
KR100260603B1 (ko) 2000-07-01
DE69517409D1 (de) 2000-07-13
JP3587529B2 (ja) 2004-11-10
KR960706172A (ko) 1996-11-08
US5754470A (en) 1998-05-19
WO1996008823A1 (en) 1996-03-21
CA2176010A1 (en) 1996-03-21
US5629890A (en) 1997-05-13
EP0728361B1 (de) 2000-06-07
EP0728361A1 (de) 1996-08-28
EP0728361A4 (de) 1998-04-29

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Owner name: WINBOND ELECTRONICS CORP., HSINCHU, TW