DE69518050T2 - Radiofrequenzplasmaquelle - Google Patents

Radiofrequenzplasmaquelle

Info

Publication number
DE69518050T2
DE69518050T2 DE69518050T DE69518050T DE69518050T2 DE 69518050 T2 DE69518050 T2 DE 69518050T2 DE 69518050 T DE69518050 T DE 69518050T DE 69518050 T DE69518050 T DE 69518050T DE 69518050 T2 DE69518050 T2 DE 69518050T2
Authority
DE
Germany
Prior art keywords
radio frequency
plasma source
frequency plasma
source
radio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69518050T
Other languages
English (en)
Other versions
DE69518050D1 (de
Inventor
Marco Capacci
Giovanni Enrico Noci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leonardo SpA
Original Assignee
Laben SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laben SpA filed Critical Laben SpA
Application granted granted Critical
Publication of DE69518050D1 publication Critical patent/DE69518050D1/de
Publication of DE69518050T2 publication Critical patent/DE69518050T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
DE69518050T 1994-10-21 1995-10-12 Radiofrequenzplasmaquelle Expired - Lifetime DE69518050T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITFI940194A IT1269413B (it) 1994-10-21 1994-10-21 Sorgente di plasma a radiofrequenza

Publications (2)

Publication Number Publication Date
DE69518050D1 DE69518050D1 (de) 2000-08-24
DE69518050T2 true DE69518050T2 (de) 2001-03-22

Family

ID=11351008

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69518050T Expired - Lifetime DE69518050T2 (de) 1994-10-21 1995-10-12 Radiofrequenzplasmaquelle

Country Status (4)

Country Link
US (1) US5592055A (de)
EP (1) EP0710056B1 (de)
DE (1) DE69518050T2 (de)
IT (1) IT1269413B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10331926A1 (de) * 2003-07-15 2005-02-24 Leybold Optics Gmbh Hochfrequenzquelle zur Erzeugung eines durch Magnetfelder geformten Plasmastrahls und Verfahren zum Bestrahlen einer Oberfläche
DE10358505A1 (de) * 2003-12-13 2005-07-14 Roth & Rau Ag Plasmaquelle zur Erzeugung eines induktiv gekoppelten Plasmas

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US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US6293090B1 (en) * 1998-07-22 2001-09-25 New England Space Works, Inc. More efficient RF plasma electric thruster
GB2342927B (en) * 1998-10-23 2003-05-07 Trikon Holdings Ltd Apparatus and methods for sputtering
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7359177B2 (en) 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
WO2011103194A2 (en) * 2010-02-16 2011-08-25 University Of Florida Research Foundation, Inc. Method and apparatus for small satellite propulsion
JP2014519148A (ja) * 2011-05-12 2014-08-07 ボズウェル，ロデリック，ウィリアム プラズママイクロスラスタ
WO2014131055A1 (en) 2013-02-25 2014-08-28 University Of Florida Research Foundation, Incorporated Method and apparatus for providing high control authority atmospheric plasma

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Publication number Priority date Publication date Assignee Title
JPS5779621A (en) 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
JPH0616384B2 (ja) * 1984-06-11 1994-03-02 日本電信電話株式会社 マイクロ波イオン源
US4870245A (en) * 1985-04-01 1989-09-26 Motorola, Inc. Plasma enhanced thermal treatment apparatus
JPS6276137A (ja) * 1985-09-30 1987-04-08 Hitachi Ltd イオン源
JPH0654644B2 (ja) 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
US4714831A (en) 1986-05-01 1987-12-22 International Business Machines Spherical retarding grid analyzer
KR900003310B1 (ko) 1986-05-27 1990-05-14 리가가구 겡큐소 이온 발생 장치
EP0339554A3 (de) 1988-04-26 1989-12-20 Hauzer Holding B.V. Hochfrequenz-Ionenstrahlquelle
JPH01289251A (ja) * 1988-05-17 1989-11-21 Matsushita Electric Ind Co Ltd 薄膜トランジスターの製造方法
US5107170A (en) * 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
US5075594A (en) 1989-09-13 1991-12-24 Hughes Aircraft Company Plasma switch with hollow, thermionic cathode
US5081398A (en) * 1989-10-20 1992-01-14 Board Of Trustees Operating Michigan State University Resonant radio frequency wave coupler apparatus using higher modes
JPH04901A (ja) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
IT1246682B (it) 1991-03-04 1994-11-24 Proel Tecnologie Spa Dispositivo a catodo cavo non riscaldato per la generazione dinamica di plasma
IT1246684B (it) 1991-03-07 1994-11-24 Proel Tecnologie Spa Propulsore ionico a risonanza ciclotronica.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10331926A1 (de) * 2003-07-15 2005-02-24 Leybold Optics Gmbh Hochfrequenzquelle zur Erzeugung eines durch Magnetfelder geformten Plasmastrahls und Verfahren zum Bestrahlen einer Oberfläche
DE10358505A1 (de) * 2003-12-13 2005-07-14 Roth & Rau Ag Plasmaquelle zur Erzeugung eines induktiv gekoppelten Plasmas
DE10358505B4 (de) * 2003-12-13 2007-10-11 Roth & Rau Ag Plasmaquelle zur Erzeugung eines induktiv gekoppelten Plasmas

Also Published As

Publication number Publication date
ITFI940194A1 (it) 1996-04-21
ITFI940194A0 (it) 1994-10-21
US5592055A (en) 1997-01-07
IT1269413B (it) 1997-04-01
EP0710056B1 (de) 2000-07-19
DE69518050D1 (de) 2000-08-24
EP0710056A1 (de) 1996-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ALENIA SPAZIO S.P.A., ROM/ROMA, IT

8327 Change in the person/name/address of the patent owner

Owner name: FINMECCANICA S.P.A., ROM/ROMA, IT