DE69522150T2 - Operationsverstärker und Stromdetektorschaltungen - Google Patents

Operationsverstärker und Stromdetektorschaltungen

Info

Publication number
DE69522150T2
DE69522150T2 DE69522150T DE69522150T DE69522150T2 DE 69522150 T2 DE69522150 T2 DE 69522150T2 DE 69522150 T DE69522150 T DE 69522150T DE 69522150 T DE69522150 T DE 69522150T DE 69522150 T2 DE69522150 T2 DE 69522150T2
Authority
DE
Germany
Prior art keywords
current detector
operational amplifiers
detector circuits
circuits
amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69522150T
Other languages
English (en)
Other versions
DE69522150D1 (de
Inventor
Osamu Kobayashi
Atsushi Matsuda
Tachio Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13542694A external-priority patent/JP3385100B2/ja
Priority claimed from JP15587594A external-priority patent/JP3828165B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69522150D1 publication Critical patent/DE69522150D1/de
Publication of DE69522150T2 publication Critical patent/DE69522150T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/345—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/307—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers
    • H03F1/308—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers using MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3028—CMOS common source output SEPP amplifiers with symmetrical driving of the end stage
DE69522150T 1994-06-17 1995-03-30 Operationsverstärker und Stromdetektorschaltungen Expired - Lifetime DE69522150T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13542694A JP3385100B2 (ja) 1994-06-17 1994-06-17 演算増幅器
JP15587594A JP3828165B2 (ja) 1994-07-07 1994-07-07 電流検出回路及び増幅器

Publications (2)

Publication Number Publication Date
DE69522150D1 DE69522150D1 (de) 2001-09-20
DE69522150T2 true DE69522150T2 (de) 2001-11-22

Family

ID=26469287

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69522150T Expired - Lifetime DE69522150T2 (de) 1994-06-17 1995-03-30 Operationsverstärker und Stromdetektorschaltungen
DE69532093T Expired - Lifetime DE69532093T2 (de) 1994-06-17 1995-03-30 Stromdetektorschaltungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69532093T Expired - Lifetime DE69532093T2 (de) 1994-06-17 1995-03-30 Stromdetektorschaltungen

Country Status (3)

Country Link
US (3) US5606287A (de)
EP (2) EP0688097B1 (de)
DE (2) DE69522150T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10230119A1 (de) * 2001-11-02 2003-05-15 Mitsubishi Electric Corp Halbleitervorrichtung mit einem geringen Stromverbrauch und einer stabil arbeitenden internen Schaltung

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5606287A (en) * 1994-06-17 1997-02-25 Fujitsu Limited Operational amplifier having stable operations for a wide range of source voltage, and current detector circuit employing a small number of elements
JP3537569B2 (ja) * 1995-02-27 2004-06-14 松下電器産業株式会社 差動増幅装置
JP3360501B2 (ja) * 1995-09-20 2002-12-24 三菱電機株式会社 増幅回路及び携帯電話用半導体集積回路装置
US5734296A (en) * 1996-03-19 1998-03-31 Motorola, Inc. Low voltage operational amplifier input stage and method
US5798673A (en) * 1996-03-19 1998-08-25 Motorola, Inc. Low voltage operational amplifier bias circuit and method
US6011415A (en) * 1996-10-21 2000-01-04 Texas Instruments Incorporated Shock sensor circuitry and method for amplifying an input signal including leakage currents
JPH10190373A (ja) * 1996-12-20 1998-07-21 Fujitsu Ltd 増幅回路
CN1074610C (zh) * 1998-04-27 2001-11-07 王斌 采用并联稳压热跟踪偏置电路的推挽电流放大器
KR100537053B1 (ko) 1998-12-25 2005-12-16 후지쯔 가부시끼가이샤 푸쉬풀형 증폭 회로
US6366167B1 (en) 2000-02-29 2002-04-02 Gain Technology Corporation Low voltage rail-to-rail CMOS input stage
US6353363B1 (en) * 2000-02-29 2002-03-05 Gain Technology Corporation Low voltage rail-to-rail CMOS output stage
US6535062B1 (en) * 2000-06-30 2003-03-18 Raytheon Company Low noise, low distortion, complementary IF amplifier
US6531922B1 (en) * 2000-10-16 2003-03-11 Koninklijke Philips Electronics N.V. DC-coupling approach for current mode circuits
US6501333B1 (en) * 2001-06-21 2002-12-31 Stmicroelectronics Limited Differential amplifier circuit
US6643503B1 (en) 2002-04-17 2003-11-04 Motorola, Inc. Wireless speaker for radio communication device
KR100449950B1 (ko) * 2002-07-19 2004-09-30 주식회사 하이닉스반도체 부하구동력 가변형 증폭회로
US7190230B1 (en) 2002-09-11 2007-03-13 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
US7253690B1 (en) 2002-09-11 2007-08-07 Marvell International, Ltd. Method and apparatus for an LNA with high linearity and improved gain control
US6977553B1 (en) 2002-09-11 2005-12-20 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
JP2004235499A (ja) 2003-01-31 2004-08-19 Toshiba Corp 半導体装置
US7609049B1 (en) * 2008-05-28 2009-10-27 Vimicro Corporation Accurate scan-mode voltage detection circuit
US7872531B1 (en) * 2009-10-16 2011-01-18 Qualcomm, Incorporated Amplifier bias techniques
JP5488171B2 (ja) * 2010-04-27 2014-05-14 株式会社村田製作所 バイアス回路、電力増幅器及びカレントミラー回路
JP5606345B2 (ja) 2011-01-25 2014-10-15 セイコーインスツル株式会社 出力回路
JP2019033414A (ja) * 2017-08-09 2019-02-28 富士電機株式会社 差動回路およびｏｐアンプ
JP7278306B2 (ja) 2018-12-19 2023-05-19 三菱電機株式会社 Ａｂ級アンプおよびオペアンプ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4267517A (en) * 1977-12-07 1981-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Operational amplifier
JPH0622329B2 (ja) * 1984-03-05 1994-03-23 株式会社東芝 多数決回路
FR2562739B1 (fr) * 1984-04-06 1989-05-26 Efcis Amplificateur a large bande a double contre-reaction de mode commun
US4644288A (en) * 1985-01-09 1987-02-17 Crown International, Inc. Method of fault sensing for power amplifiers having coupled power stages with normally alternate current flow
JP2543872B2 (ja) * 1986-08-13 1996-10-16 株式会社東芝 増幅回路
KR900008393B1 (ko) * 1986-10-02 1990-11-17 미츠비시 덴키 가부시키가이샤 인버터장치의 과전류보호회로
JP2594585B2 (ja) * 1987-11-25 1997-03-26 富士通株式会社 演算増幅回路
EP0389654B1 (de) * 1989-03-29 1994-10-19 Siemens Aktiengesellschaft Integrierbare Verstärkerschaltung
US5055796A (en) * 1990-05-25 1991-10-08 Maxim Integrated Products CMOS output stage
US5606287A (en) * 1994-06-17 1997-02-25 Fujitsu Limited Operational amplifier having stable operations for a wide range of source voltage, and current detector circuit employing a small number of elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10230119A1 (de) * 2001-11-02 2003-05-15 Mitsubishi Electric Corp Halbleitervorrichtung mit einem geringen Stromverbrauch und einer stabil arbeitenden internen Schaltung

Also Published As

Publication number Publication date
EP1104108A1 (de) 2001-05-30
EP1104108B1 (de) 2003-11-05
EP0688097A3 (de) 1997-01-02
US5606287A (en) 1997-02-25
DE69522150D1 (de) 2001-09-20
US5673002A (en) 1997-09-30
EP0688097B1 (de) 2001-08-16
USRE37217E1 (en) 2001-06-12
EP0688097A2 (de) 1995-12-20
DE69532093D1 (de) 2003-12-11
DE69532093T2 (de) 2004-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE