DE69523192D1 - Halbleiterbauelement mit isoliertem Gate und Verfahren zu dessen Herstellung - Google Patents

Halbleiterbauelement mit isoliertem Gate und Verfahren zu dessen Herstellung

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Publication number
DE69523192D1
DE69523192D1 DE69523192T DE69523192T DE69523192D1 DE 69523192 D1 DE69523192 D1 DE 69523192D1 DE 69523192 T DE69523192 T DE 69523192T DE 69523192 T DE69523192 T DE 69523192T DE 69523192 D1 DE69523192 D1 DE 69523192D1
Authority
DE
Germany
Prior art keywords
main surface
semiconductor layer
semiconductor
upper main
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523192T
Other languages
English (en)
Other versions
DE69523192T2 (de
Inventor
Hideki Takahashi
Hidenori Nishihara
Masana Harada
Tadaharu Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Filing date
Publication date
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69523192D1 publication Critical patent/DE69523192D1/de
Application granted granted Critical
Publication of DE69523192T2 publication Critical patent/DE69523192T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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DE69523192T 1994-02-21 1995-02-09 Halbleiterbauelement mit isoliertem Gate und Verfahren zu dessen Herstellung Expired - Lifetime DE69523192T2 (de)

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Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
US6040599A (en) * 1996-03-12 2000-03-21 Mitsubishi Denki Kabushiki Kaisha Insulated trench semiconductor device with particular layer structure
JP3410286B2 (ja) 1996-04-01 2003-05-26 三菱電機株式会社 絶縁ゲート型半導体装置
KR100486349B1 (ko) * 1997-09-30 2006-04-21 페어차일드코리아반도체 주식회사 트렌치형파워모스펫
WO1999038214A1 (fr) 1998-01-22 1999-07-29 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur bipolaire de type a porte isolante
DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
EP1060517A1 (de) 1998-02-27 2000-12-20 ABB Semiconductors AG Bipolartransistor mit isolierter gateelektrode
WO1999056323A1 (fr) 1998-04-27 1999-11-04 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur et son procede de fabrication
KR100564531B1 (ko) * 1998-10-19 2006-05-25 페어차일드코리아반도체 주식회사 트랜치게이트구조를갖는전력모스펫및그제조방법
JP2000269486A (ja) * 1999-03-15 2000-09-29 Toshiba Corp 半導体装置
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3293603B2 (ja) 1999-09-17 2002-06-17 トヨタ自動車株式会社 電力用半導体装置
JP4764987B2 (ja) * 2000-09-05 2011-09-07 富士電機株式会社 超接合半導体素子
JP4460741B2 (ja) * 2000-09-27 2010-05-12 株式会社東芝 電力用半導体素子及びその製造方法
DE60139386D1 (de) * 2001-02-02 2009-09-10 Mitsubishi Electric Corp Halbleiteranordnung mit einem bipolartransistor mit isoliertem gate und einer freilaufdiode
JP4823435B2 (ja) * 2001-05-29 2011-11-24 三菱電機株式会社 半導体装置及びその製造方法
JP4376798B2 (ja) * 2001-07-26 2009-12-02 株式会社デンソー 半導体装置
JP2008078679A (ja) * 2001-07-26 2008-04-03 Denso Corp 半導体装置
US7045859B2 (en) * 2001-09-05 2006-05-16 International Rectifier Corporation Trench fet with self aligned source and contact
US8884361B2 (en) 2002-07-19 2014-11-11 Renesas Electronics Corporation Semiconductor device
JP2004055812A (ja) 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7557395B2 (en) * 2002-09-30 2009-07-07 International Rectifier Corporation Trench MOSFET technology for DC-DC converter applications
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
JP4604444B2 (ja) * 2002-12-24 2011-01-05 トヨタ自動車株式会社 埋設ゲート型半導体装置
JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4059846B2 (ja) 2003-12-26 2008-03-12 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP4570370B2 (ja) * 2004-02-18 2010-10-27 パナソニック株式会社 半導体装置
US7598134B2 (en) * 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7371641B2 (en) * 2004-10-29 2008-05-13 International Rectifier Corporation Method of making a trench MOSFET with deposited oxide
US7385248B2 (en) * 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
US7592230B2 (en) * 2006-08-25 2009-09-22 Freescale Semiconductor, Inc. Trench power device and method
US8115251B2 (en) * 2007-04-30 2012-02-14 International Business Machines Corporation Recessed gate channel with low Vt corner
US8129818B2 (en) * 2008-10-14 2012-03-06 Mitsubishi Electric Corporation Power device
JP5672719B2 (ja) * 2010-03-03 2015-02-18 株式会社デンソー パワー素子を備えた半導体装置の製造方法
JP5401409B2 (ja) * 2010-07-22 2014-01-29 ルネサスエレクトロニクス株式会社 半導体装置
CN102299173B (zh) * 2011-09-01 2013-03-20 苏州博创集成电路设计有限公司 一种超结纵向双扩散n型金属氧化物半导体管
GB2526950B (en) 2011-11-23 2016-04-20 Acorn Tech Inc Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
KR101841445B1 (ko) 2011-12-06 2018-03-23 삼성전자주식회사 저항성 메모리 소자 및 그 제조 방법
JP6022777B2 (ja) * 2012-02-28 2016-11-09 エスアイアイ・セミコンダクタ株式会社 半導体装置の製造方法
JP5792701B2 (ja) * 2012-09-24 2015-10-14 株式会社東芝 半導体装置及びその製造方法
CN106067484B (zh) * 2013-09-20 2019-06-14 三垦电气株式会社 半导体装置
US9240450B2 (en) 2014-02-12 2016-01-19 Infineon Technologies Ag IGBT with emitter electrode electrically connected with impurity zone
JP5715281B2 (ja) * 2014-04-18 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置
CN104332497B (zh) * 2014-11-05 2017-02-01 中国东方电气集团有限公司 注入增强型绝缘栅双极型晶体管
CN104332496B (zh) * 2014-11-05 2018-03-23 中国东方电气集团有限公司 一种注入增强型绝缘栅双极型晶体管
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
JP6649197B2 (ja) * 2016-07-14 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10170627B2 (en) 2016-11-18 2019-01-01 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
JP6904416B2 (ja) 2017-06-09 2021-07-14 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7176239B2 (ja) * 2018-06-14 2022-11-22 富士電機株式会社 半導体装置
KR102042832B1 (ko) * 2018-06-21 2019-11-08 현대오트론 주식회사 전력 반도체 소자 및 그 제조방법

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596673A (en) * 1979-01-16 1980-07-23 Nec Corp Semiconductor device
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
JPS58106870A (ja) * 1981-12-18 1983-06-25 Nissan Motor Co Ltd パワ−ｍｏｓｆｅｔ
JPS59125653A (ja) * 1983-01-05 1984-07-20 Nec Corp アナログマルチプレクサｉｃ
DE3301666A1 (de) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung
JPS60159663A (ja) * 1984-01-31 1985-08-21 Fujitsu Ltd 消光比劣化検出方式
EP0159663A3 (de) * 1984-04-26 1987-09-23 General Electric Company Thyristoren, Feldeffekttransistoren mit isoliertem Gate und MOSFETs hoher Dichte gesteuert durch eine in einer V-Nut angebrachte MOS-Struktur und Verfahren zur Herstellung
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPH0783112B2 (ja) * 1985-01-17 1995-09-06 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH0612827B2 (ja) * 1985-02-28 1994-02-16 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPS63213968A (ja) 1987-03-03 1988-09-06 Mitsubishi Electric Corp 半導体装置
US5285094A (en) * 1987-08-24 1994-02-08 Hitachi, Ltd. Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect
JPH01198076A (ja) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp 半導体装置
JPH01253280A (ja) * 1988-04-01 1989-10-09 Fuji Electric Co Ltd たて型伝導度変調型ｍｏｓｆｅｔの製造方法
JPH023288A (ja) * 1988-06-20 1990-01-08 Meidensha Corp 絶縁ゲート型バイポーラトランジスタ
JPH023980A (ja) * 1988-06-22 1990-01-09 Nissan Motor Co Ltd 縦型電界効果トランジスタ
JPH0828506B2 (ja) * 1988-11-07 1996-03-21 三菱電機株式会社 半導体装置およびその製造方法
JPH0236572A (ja) * 1988-07-27 1990-02-06 Hitachi Ltd 半導体装置
JPH0274074A (ja) * 1988-09-09 1990-03-14 Seiko Epson Corp 半導体基板
JPH02112282A (ja) * 1988-10-21 1990-04-24 Olympus Optical Co Ltd 半導体デバイス
US4994871A (en) * 1988-12-02 1991-02-19 General Electric Company Insulated gate bipolar transistor with improved latch-up current level and safe operating area
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
JP2876694B2 (ja) * 1990-03-20 1999-03-31 富士電機株式会社 電流検出端子を備えたｍｏｓ型半導体装置
US5063307A (en) * 1990-09-20 1991-11-05 Ixys Corporation Insulated gate transistor devices with temperature and current sensor
JP2635828B2 (ja) * 1991-01-09 1997-07-30 株式会社東芝 半導体装置
JPH04326575A (ja) * 1991-04-26 1992-11-16 Nec Ic Microcomput Syst Ltd 集積回路装置
JP2973588B2 (ja) * 1991-06-10 1999-11-08 富士電機株式会社 Ｍｏｓ型半導体装置
US5448083A (en) * 1991-08-08 1995-09-05 Kabushiki Kaisha Toshiba Insulated-gate semiconductor device
JP2833610B2 (ja) * 1991-10-01 1998-12-09 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
JP3227825B2 (ja) * 1991-10-24 2001-11-12 富士電機株式会社 電力用半導体素子およびその製造方法
JPH05211193A (ja) 1991-11-12 1993-08-20 Nec Corp ワイヤボンディング方法
JPH05144867A (ja) 1991-11-19 1993-06-11 Hitachi Ltd 電子装置およびワイヤボンデイング方法ならびにワイヤボンデイング装置
JP2739002B2 (ja) * 1991-12-20 1998-04-08 三菱電機株式会社 半導体装置及びその製造方法
US5321281A (en) * 1992-03-18 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of fabricating same
JP3175852B2 (ja) * 1992-03-30 2001-06-11 株式会社デンソー 半導体装置及びその製造方法
JP2948985B2 (ja) * 1992-06-12 1999-09-13 三菱電機株式会社 半導体装置
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
US5751024A (en) 1995-03-14 1998-05-12 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
US6001678A (en) 1995-03-14 1999-12-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
US6040599A (en) * 1996-03-12 2000-03-21 Mitsubishi Denki Kabushiki Kaisha Insulated trench semiconductor device with particular layer structure
EP0860883B1 (de) 1996-09-06 2008-11-12 Mitsubishi Denki Kabushiki Kaisha Transistor und verfahren zur herstellung
JPH1154748A (ja) * 1997-08-04 1999-02-26 Mitsubishi Electric Corp 半導体装置およびその製造方法

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EP1120834A2 (de) 2001-08-01
EP0668616A3 (de) 1995-10-11
JPH07235672A (ja) 1995-09-05
KR950026033A (ko) 1995-09-18
US6107650A (en) 2000-08-22
EP1120834A3 (de) 2001-08-22
EP0668616A2 (de) 1995-08-23
DE69523192T2 (de) 2002-07-04
US6331466B1 (en) 2001-12-18
US6323508B1 (en) 2001-11-27
KR100199273B1 (ko) 1999-06-15
EP0668616B1 (de) 2001-10-17

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