DE69523218D1 - Plasmareinigungsverfahren mit Gebrauch von einem Plasma-beständigen Deckel - Google Patents
Plasmareinigungsverfahren mit Gebrauch von einem Plasma-beständigen DeckelInfo
- Publication number
- DE69523218D1 DE69523218D1 DE69523218T DE69523218T DE69523218D1 DE 69523218 D1 DE69523218 D1 DE 69523218D1 DE 69523218 T DE69523218 T DE 69523218T DE 69523218 T DE69523218 T DE 69523218T DE 69523218 D1 DE69523218 D1 DE 69523218D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- cleaning process
- resistant lid
- plasma cleaning
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/271,134 US5705080A (en) | 1994-07-06 | 1994-07-06 | Plasma-inert cover and plasma cleaning process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69523218D1 true DE69523218D1 (de) | 2001-11-22 |
DE69523218T2 DE69523218T2 (de) | 2002-06-27 |
Family
ID=23034335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69523218T Expired - Fee Related DE69523218T2 (de) | 1994-07-06 | 1995-07-06 | Plasmareinigungsverfahren mit Gebrauch von einem Plasma-beständigen Deckel |
Country Status (5)
Country | Link |
---|---|
US (2) | US5705080A (de) |
EP (2) | EP0691420B1 (de) |
JP (1) | JPH0881790A (de) |
KR (1) | KR100270288B1 (de) |
DE (1) | DE69523218T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
SG70035A1 (en) * | 1996-11-13 | 2000-01-25 | Applied Materials Inc | Systems and methods for high temperature processing of semiconductor wafers |
US6120640A (en) * | 1996-12-19 | 2000-09-19 | Applied Materials, Inc. | Boron carbide parts and coatings in a plasma reactor |
US6189482B1 (en) | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
JP3423186B2 (ja) * | 1997-04-09 | 2003-07-07 | 東京エレクトロン株式会社 | 処理方法 |
US6106630A (en) * | 1997-08-07 | 2000-08-22 | Applied Materials, Inc. | Ceramic-coated heating assembly for high temperature processing chamber |
US5966613A (en) * | 1997-09-08 | 1999-10-12 | Lsi Corporation | Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective |
US5926720A (en) | 1997-09-08 | 1999-07-20 | Lsi Logic Corporation | Consistent alignment mark profiles on semiconductor wafers using PVD shadowing |
US5981352A (en) * | 1997-09-08 | 1999-11-09 | Lsi Logic Corporation | Consistent alignment mark profiles on semiconductor wafers using fine grain tungsten protective layer |
US6328041B1 (en) * | 1998-09-18 | 2001-12-11 | International Business Machines Corporation | Universal cleaning wafer for a plasma chamber |
US6432256B1 (en) * | 1999-02-25 | 2002-08-13 | Applied Materials, Inc. | Implanatation process for improving ceramic resistance to corrosion |
US6261918B1 (en) | 1999-10-04 | 2001-07-17 | Conexant Systems, Inc. | Method for creating and preserving alignment marks for aligning mask layers in integrated circuit manufacture |
US6790374B1 (en) * | 1999-11-18 | 2004-09-14 | Chartered Semiconductor Manufacturing Ltd. | Plasma etch method for forming plasma etched silicon layer |
US6410172B1 (en) | 1999-11-23 | 2002-06-25 | Advanced Ceramics Corporation | Articles coated with aluminum nitride by chemical vapor deposition |
US20030010354A1 (en) * | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
US6500356B2 (en) * | 2000-03-27 | 2002-12-31 | Applied Materials, Inc. | Selectively etching silicon using fluorine without plasma |
US6843258B2 (en) * | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
US7960670B2 (en) | 2005-05-03 | 2011-06-14 | Kla-Tencor Corporation | Methods of and apparatuses for measuring electrical parameters of a plasma process |
US20040151656A1 (en) * | 2001-11-26 | 2004-08-05 | Siegele Stephen H. | Modular molecular halogen gas generation system |
US20090001524A1 (en) * | 2001-11-26 | 2009-01-01 | Siegele Stephen H | Generation and distribution of a fluorine gas |
US20040037768A1 (en) * | 2001-11-26 | 2004-02-26 | Robert Jackson | Method and system for on-site generation and distribution of a process gas |
US6815007B1 (en) | 2002-03-04 | 2004-11-09 | Taiwan Semiconductor Manufacturing Company | Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film |
US6780787B2 (en) | 2002-03-21 | 2004-08-24 | Lam Research Corporation | Low contamination components for semiconductor processing apparatus and methods for making components |
US20040142572A1 (en) * | 2003-01-16 | 2004-07-22 | Deveau Jason S. T. | Apparatus and method for selectively inducing hydrophobicity in a single barrel of a multibarrel ion selective microelectrode |
US7419702B2 (en) * | 2004-03-31 | 2008-09-02 | Tokyo Electron Limited | Method for processing a substrate |
CN1324689C (zh) * | 2004-10-26 | 2007-07-04 | 中芯国际集成电路制造(上海)有限公司 | 氧化铝原子淀积层的预处理方法 |
US7959984B2 (en) * | 2004-12-22 | 2011-06-14 | Lam Research Corporation | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
US20080118663A1 (en) * | 2006-10-12 | 2008-05-22 | Applied Materials, Inc. | Contamination reducing liner for inductively coupled chamber |
US20080214007A1 (en) * | 2007-03-02 | 2008-09-04 | Texas Instruments Incorporated | Method for removing diamond like carbon residue from a deposition/etch chamber using a plasma clean |
JP5683063B2 (ja) * | 2007-09-05 | 2015-03-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 窒化アルミニウム又は酸化ベリリウムのセラミックカバーウェハ |
WO2009057838A1 (en) * | 2007-11-01 | 2009-05-07 | Eugene Technology Co., Ltd | Apparatus for surface-treating wafer using high-frequency inductively-coupled plasma |
KR101239710B1 (ko) | 2010-08-09 | 2013-03-06 | (주)지니아텍 | 능동형 유기 발광다이오드의 글라스 세정장치 및 그 방법 |
US8691690B2 (en) | 2010-09-13 | 2014-04-08 | International Business Machines Corporation | Contact formation method incorporating preventative etch step reducing interlayer dielectric material flake defects |
KR20130122503A (ko) * | 2012-04-30 | 2013-11-07 | 세메스 주식회사 | 기판 세정 장치 및 기판 세정 방법 |
WO2015061616A1 (en) | 2013-10-24 | 2015-04-30 | Surmet Corporation | High purity polycrystalline aluminum oxynitride bodies |
CN103757707B (zh) * | 2014-01-21 | 2016-04-06 | 广东富源科技股份有限公司 | 一种蓝宝石材质手机屏幕盖板的加工工艺 |
CN104064458A (zh) * | 2014-07-08 | 2014-09-24 | 上海先进半导体制造股份有限公司 | Pecvd薄膜淀积设备及其热盘 |
US10600624B2 (en) | 2017-03-10 | 2020-03-24 | Applied Materials, Inc. | System and method for substrate processing chambers |
US10636628B2 (en) | 2017-09-11 | 2020-04-28 | Applied Materials, Inc. | Method for cleaning a process chamber |
US10312076B2 (en) | 2017-03-10 | 2019-06-04 | Applied Materials, Inc. | Application of bottom purge to increase clean efficiency |
US10766057B2 (en) * | 2017-12-28 | 2020-09-08 | Micron Technology, Inc. | Components and systems for cleaning a tool for forming a semiconductor device, and related methods |
GB201815258D0 (en) * | 2018-09-19 | 2018-10-31 | Spts Technologies Ltd | A support |
CN111725114B (zh) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 加热灯的位置校正装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4397724A (en) * | 1981-08-24 | 1983-08-09 | Bell Telephone Laboratories, Incorporated | Apparatus and method for plasma-assisted etching of wafers |
US4473455A (en) * | 1981-12-21 | 1984-09-25 | At&T Bell Laboratories | Wafer holding apparatus and method |
CA1220929A (en) * | 1982-09-13 | 1987-04-28 | S. Richard Turner | Sodium styrene sulfonate-co-sodium-n-(4-sulfophenyl)- maleimide - an improved viscosity control additive |
JPS60169139A (ja) * | 1984-02-13 | 1985-09-02 | Canon Inc | 気相法装置 |
FR2616030A1 (fr) * | 1987-06-01 | 1988-12-02 | Commissariat Energie Atomique | Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede |
US5207836A (en) * | 1989-08-25 | 1993-05-04 | Applied Materials, Inc. | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
US5223112A (en) * | 1991-04-30 | 1993-06-29 | Applied Materials, Inc. | Removable shutter apparatus for a semiconductor process chamber |
JPH0555184A (ja) * | 1991-08-27 | 1993-03-05 | Fujitsu Ltd | クリーニング方法 |
US5240555A (en) * | 1992-04-16 | 1993-08-31 | Eastman Kodak Company | Method and apparatus for cleaning semiconductor etching machines |
US5695568A (en) * | 1993-04-05 | 1997-12-09 | Applied Materials, Inc. | Chemical vapor deposition chamber |
JPH0711446A (ja) * | 1993-05-27 | 1995-01-13 | Applied Materials Inc | 気相成長用サセプタ装置 |
US5549756A (en) * | 1994-02-02 | 1996-08-27 | Applied Materials, Inc. | Optical pyrometer for a thin film deposition system |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
US5405491A (en) * | 1994-03-04 | 1995-04-11 | Motorola Inc. | Plasma etching process |
US5476548A (en) * | 1994-06-20 | 1995-12-19 | Applied Materials, Inc. | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
-
1994
- 1994-07-06 US US08/271,134 patent/US5705080A/en not_active Expired - Fee Related
-
1995
- 1995-07-05 KR KR1019950019568A patent/KR100270288B1/ko not_active IP Right Cessation
- 1995-07-06 EP EP95110578A patent/EP0691420B1/de not_active Expired - Lifetime
- 1995-07-06 DE DE69523218T patent/DE69523218T2/de not_active Expired - Fee Related
- 1995-07-06 EP EP00127477A patent/EP1132495A1/de not_active Withdrawn
- 1995-07-06 JP JP7171097A patent/JPH0881790A/ja active Pending
-
1996
- 1996-06-10 US US08/662,723 patent/US5810936A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5810936A (en) | 1998-09-22 |
EP0691420B1 (de) | 2001-10-17 |
KR960005773A (ko) | 1996-02-23 |
JPH0881790A (ja) | 1996-03-26 |
KR100270288B1 (ko) | 2000-12-01 |
EP0691420A1 (de) | 1996-01-10 |
US5705080A (en) | 1998-01-06 |
EP1132495A1 (de) | 2001-09-12 |
DE69523218T2 (de) | 2002-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69523218T2 (de) | Plasmareinigungsverfahren mit Gebrauch von einem Plasma-beständigen Deckel | |
DE69532663D1 (de) | Tonerbehälterherstellungsverfahren | |
DE69429517D1 (de) | Kontinuierliches lackierverfahren | |
DE69634840D1 (de) | Erdung von einem Schalter | |
ATE157899T1 (de) | Reinigung von filtern | |
NO954378D0 (no) | Fremgangsmåte til maskinell rensing av fisk, samt maskin til gjennomföring av fremgangsmåten | |
EP0739228A4 (de) | Rezyklieren von zur reinigung von halbleiterscheiben verwendeten stoffen | |
DE69406974T2 (de) | Beschichtungsverfahren | |
DE69404603D1 (de) | Beschichtungsverfahren | |
DE69617977D1 (de) | Reinigungsverfahren | |
IL114395A0 (en) | Non-destructive process for characterizing the surface condition of a part | |
DE69417190T2 (de) | Beschichtungsverfahren | |
BR9408532A (pt) | Processo para a cocção contínua de polpa química | |
DE69627669D1 (de) | Reinigungsverfahren | |
NO954662L (no) | Fremgangsmåte for bedring av effektiviteten ved rensing av horisontale borehull | |
DE69418645D1 (de) | Reinigungsverfahren | |
DE69404304D1 (de) | Reiningungsverfahren | |
BR9404954A (pt) | Processo de limpar partículas a partir de uma superfície formadora de imagem | |
DE69517067D1 (de) | Wiederverwendungsverfahren von Harzmischungen | |
DE69500373T2 (de) | Reinigungsverfahren | |
DE69527224T2 (de) | Beschichtungsverfahren | |
DE69416302T2 (de) | Plasmaschweissverfahren | |
DE69408925T2 (de) | Beschichtungsverfahren | |
DE29517719U1 (de) | Gefäßreinigungsmaschine | |
DE59402793D1 (de) | Reinigungsverfahren |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |