DE69525554D1 - Spannungsversorgungen für flash-speicher - Google Patents

Spannungsversorgungen für flash-speicher

Info

Publication number
DE69525554D1
DE69525554D1 DE69525554T DE69525554T DE69525554D1 DE 69525554 D1 DE69525554 D1 DE 69525554D1 DE 69525554 T DE69525554 T DE 69525554T DE 69525554 T DE69525554 T DE 69525554T DE 69525554 D1 DE69525554 D1 DE 69525554D1
Authority
DE
Germany
Prior art keywords
flash memory
power supplies
supplies
power
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69525554T
Other languages
English (en)
Other versions
DE69525554T2 (de
Inventor
Jahanshir Javanifard
Kimberley Meister
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of DE69525554D1 publication Critical patent/DE69525554D1/de
Publication of DE69525554T2 publication Critical patent/DE69525554T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
DE69525554T 1994-10-19 1995-10-18 Spannungsversorgungen für flash-speicher Expired - Lifetime DE69525554T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32670294A 1994-10-19 1994-10-19
PCT/US1995/013235 WO1996013037A1 (en) 1994-10-19 1995-10-18 Voltage supplies for flash memory

Publications (2)

Publication Number Publication Date
DE69525554D1 true DE69525554D1 (de) 2002-03-28
DE69525554T2 DE69525554T2 (de) 2002-06-20

Family

ID=23273304

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525554T Expired - Lifetime DE69525554T2 (de) 1994-10-19 1995-10-18 Spannungsversorgungen für flash-speicher

Country Status (9)

Country Link
US (1) US5663918A (de)
EP (1) EP0792505B1 (de)
JP (1) JPH10512081A (de)
KR (1) KR100299254B1 (de)
CN (1) CN1109347C (de)
AU (1) AU3895395A (de)
DE (1) DE69525554T2 (de)
HK (1) HK1002790A1 (de)
WO (1) WO1996013037A1 (de)

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KR100997699B1 (ko) * 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
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US6822899B1 (en) * 2002-12-23 2004-11-23 Cypress Semiconductor Corporation Method of protecting flash memory from data corruption during fast power down events
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KR101044796B1 (ko) * 2004-01-13 2011-06-29 삼성전자주식회사 휴대용 데이터 저장 장치
US7196958B2 (en) * 2004-08-31 2007-03-27 Micron Technology, Inc. Power efficient memory and cards
KR100695891B1 (ko) * 2004-11-17 2007-03-19 삼성전자주식회사 동작 모드에 따라 락 아웃을 선택적으로 수행하는 장치 및방법
KR101080171B1 (ko) * 2005-09-22 2011-11-07 주식회사 하이닉스반도체 내부전원 드라이버
US7212463B2 (en) * 2005-09-23 2007-05-01 Sigma Tel, Inc. Method and system of operating mode detection
DE102006021746A1 (de) * 2006-05-10 2007-11-15 Robert Bosch Gmbh Speichervorrichtung
KR100845525B1 (ko) * 2006-08-07 2008-07-10 삼성전자주식회사 메모리 카드 시스템, 그것의 데이터 전송 방법, 그리고반도체 메모리 장치
US7639540B2 (en) * 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
US20090240863A1 (en) * 2007-10-23 2009-09-24 Psion Teklogix Inc. Distributed power regulation
JP5331405B2 (ja) * 2008-08-01 2013-10-30 株式会社東芝 不揮発性半導体記憶装置および不揮発性半導体記憶システム
US20100188880A1 (en) * 2009-01-23 2010-07-29 Analog Devices, Inc. Power switching for portable applications
KR101712340B1 (ko) 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
KR101112042B1 (ko) 2011-03-22 2012-02-24 삼성전자주식회사 휴대용 데이터 저장 장치
US9230613B2 (en) 2012-04-16 2016-01-05 Nanya Technology Corp. Power up detecting system
KR102084547B1 (ko) * 2013-01-18 2020-03-05 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템, 및 그것의 외부 전원 제어 방법
US9704581B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Voltage ramping detection
US9536575B2 (en) * 2015-01-14 2017-01-03 Macronix International Co., Ltd. Power source for memory circuitry
KR102280433B1 (ko) * 2015-09-23 2021-07-22 삼성전자주식회사 전력 공급 회로 및 이를 포함하는 저장 장치
US11355173B2 (en) * 2019-12-30 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Power supply generator assist

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Also Published As

Publication number Publication date
WO1996013037A1 (en) 1996-05-02
DE69525554T2 (de) 2002-06-20
HK1002790A1 (en) 1998-09-18
CN1169204A (zh) 1997-12-31
JPH10512081A (ja) 1998-11-17
EP0792505B1 (de) 2001-07-04
KR100299254B1 (ko) 2001-09-03
EP0792505A1 (de) 1997-09-03
CN1109347C (zh) 2003-05-21
US5663918A (en) 1997-09-02
AU3895395A (en) 1996-05-15
EP0792505A4 (de) 1999-04-07

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Legal Events

Date Code Title Description
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition