DE69527741D1 - Halbleiterspeichergerät und Antriebsverfahren - Google Patents
Halbleiterspeichergerät und AntriebsverfahrenInfo
- Publication number
- DE69527741D1 DE69527741D1 DE69527741T DE69527741T DE69527741D1 DE 69527741 D1 DE69527741 D1 DE 69527741D1 DE 69527741 T DE69527741 T DE 69527741T DE 69527741 T DE69527741 T DE 69527741T DE 69527741 D1 DE69527741 D1 DE 69527741D1
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- semiconductor storage
- drive method
- drive
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6086685A JP2914171B2 (ja) | 1994-04-25 | 1994-04-25 | 半導体メモリ装置およびその駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69527741D1 true DE69527741D1 (de) | 2002-09-19 |
DE69527741T2 DE69527741T2 (de) | 2003-04-03 |
Family
ID=13893863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69527741T Expired - Lifetime DE69527741T2 (de) | 1994-04-25 | 1995-01-12 | Halbleiterspeichergerät und Antriebsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US5523974A (de) |
EP (1) | EP0679996B1 (de) |
JP (1) | JP2914171B2 (de) |
KR (1) | KR100195606B1 (de) |
CN (1) | CN1086836C (de) |
DE (1) | DE69527741T2 (de) |
TW (1) | TW345661B (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09180492A (ja) * | 1995-12-26 | 1997-07-11 | Sony Corp | 半導体記憶装置 |
US5657281A (en) * | 1996-03-11 | 1997-08-12 | Cirrus Logic, Inc. | Systems and methods for implementing inter-device cell replacements |
KR100205006B1 (ko) * | 1996-10-08 | 1999-06-15 | 윤종용 | 자동 결함 블럭 맵핑 기능을 갖는 반도체 메모리 장치 |
US5793683A (en) * | 1997-01-17 | 1998-08-11 | International Business Machines Corporation | Wordline and bitline redundancy with no performance penalty |
DE19708963C2 (de) * | 1997-03-05 | 1999-06-02 | Siemens Ag | Halbleiterdatenspeicher mit einer Redundanzschaltung |
JPH10334689A (ja) * | 1997-05-30 | 1998-12-18 | Fujitsu Ltd | 半導体記憶装置 |
FR2770020B1 (fr) * | 1997-10-20 | 2001-05-18 | Sgs Thomson Microelectronics | Memoire a fonction d'auto-reparation |
JPH11203890A (ja) * | 1998-01-05 | 1999-07-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
DE19821459A1 (de) * | 1998-05-13 | 1999-11-18 | Siemens Ag | Anordnung zur Redundanzauswertung bei einem Halbleiterspeicherchip |
JP2000048567A (ja) * | 1998-05-22 | 2000-02-18 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
KR100333720B1 (ko) * | 1998-06-30 | 2002-06-20 | 박종섭 | 강유전체메모리소자의리던던시회로 |
KR100641081B1 (ko) * | 1998-10-29 | 2007-12-04 | 주식회사 하이닉스반도체 | 플레쉬 메모리의 리페어회로 |
KR100300873B1 (ko) * | 1998-12-30 | 2001-09-06 | 박종섭 | 강유전체 커패시터를 사용한 반도체 메모리 장치의 리던던시 회로 및 수리 방법 |
JP2001143494A (ja) * | 1999-03-19 | 2001-05-25 | Toshiba Corp | 半導体記憶装置 |
CN101086898A (zh) * | 1999-03-19 | 2007-12-12 | 株式会社东芝 | 半导体存储装置 |
JP3586591B2 (ja) * | 1999-07-01 | 2004-11-10 | シャープ株式会社 | 冗長機能を有する不揮発性半導体メモリ装置のための不良アドレスデータ記憶回路および不良アドレスデータ書き込み方法 |
JP3755346B2 (ja) * | 1999-07-26 | 2006-03-15 | 富士通株式会社 | 不揮発性半導体記憶装置 |
US6462985B2 (en) * | 1999-12-10 | 2002-10-08 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory for storing initially-setting data |
US7089360B1 (en) | 2000-03-22 | 2006-08-08 | Intel Corporation | Shared cache wordline decoder for redundant and regular addresses |
JP3594891B2 (ja) * | 2000-09-12 | 2004-12-02 | 沖電気工業株式会社 | 半導体記憶装置およびその検査方法 |
JP3848069B2 (ja) | 2000-09-22 | 2006-11-22 | 株式会社東芝 | 半導体記憶装置 |
JP4184586B2 (ja) | 2000-09-28 | 2008-11-19 | 株式会社東芝 | 半導体記憶装置 |
US6496428B2 (en) | 2001-01-19 | 2002-12-17 | Fujitsu Limited | Semiconductor memory |
JP3945993B2 (ja) * | 2001-03-29 | 2007-07-18 | 富士通株式会社 | 半導体記憶装置 |
KR100434315B1 (ko) * | 2001-06-11 | 2004-06-05 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치의 페일 구제회로 및 그구제방법 |
US6707752B2 (en) * | 2001-06-22 | 2004-03-16 | Intel Corporation | Tag design for cache access with redundant-form address |
JP5119563B2 (ja) * | 2001-08-03 | 2013-01-16 | 日本電気株式会社 | 不良メモリセル救済回路を有する半導体記憶装置 |
JP2003208796A (ja) * | 2002-01-15 | 2003-07-25 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
US6801471B2 (en) * | 2002-02-19 | 2004-10-05 | Infineon Technologies Ag | Fuse concept and method of operation |
JP2004013961A (ja) * | 2002-06-04 | 2004-01-15 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
KR100492773B1 (ko) * | 2002-12-02 | 2005-06-07 | 주식회사 하이닉스반도체 | 확장 메모리 부를 구비한 강유전체 메모리 장치 |
US7174477B2 (en) * | 2003-02-04 | 2007-02-06 | Micron Technology, Inc. | ROM redundancy in ROM embedded DRAM |
DE102004003357B4 (de) * | 2003-05-20 | 2008-10-16 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Dynamische, in FeRAMS integrierte Referenzspannungskalibrierung |
JP4641726B2 (ja) * | 2004-01-07 | 2011-03-02 | パナソニック株式会社 | 半導体記憶装置 |
US7699232B2 (en) * | 2004-02-06 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7663473B2 (en) * | 2004-02-12 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes |
KR100622349B1 (ko) * | 2004-08-04 | 2006-09-14 | 삼성전자주식회사 | 불량 블록 관리 기능을 가지는 플레시 메모리 장치 및플레시 메모리 장치의 불량 블록 관리 방법. |
CN102165533B (zh) * | 2008-09-30 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体存储器件 |
US8638596B2 (en) * | 2011-07-25 | 2014-01-28 | Qualcomm Incorporated | Non-volatile memory saving cell information in a non-volatile memory array |
JP2012119058A (ja) * | 2012-02-13 | 2012-06-21 | Fujitsu Semiconductor Ltd | 不揮発性半導体メモリ |
JP6706371B2 (ja) * | 2018-08-08 | 2020-06-03 | シャープ株式会社 | 表示装置およびその制御方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3276029D1 (en) * | 1982-02-18 | 1987-05-14 | Itt Ind Gmbh Deutsche | Memory system with an integrated matrix of non-volatile reprogrammable memory cells |
JPS59192740U (ja) * | 1983-06-02 | 1984-12-21 | パイオニア株式会社 | コンピユ−タ装置 |
US4744060A (en) * | 1984-10-19 | 1988-05-10 | Fujitsu Limited | Bipolar-transistor type random access memory having redundancy configuration |
JPS6214399A (ja) * | 1985-07-12 | 1987-01-22 | Fujitsu Ltd | 半導体記憶装置 |
US4757474A (en) * | 1986-01-28 | 1988-07-12 | Fujitsu Limited | Semiconductor memory device having redundancy circuit portion |
JPH0668917B2 (ja) * | 1987-05-15 | 1994-08-31 | 日本電気株式会社 | メモリ素子入換制御回路 |
US5128944A (en) * | 1989-05-26 | 1992-07-07 | Texas Instruments Incorporated | Apparatus and method for providing notification of bit-cell failure in a redundant-bit-cell memory |
US5357458A (en) * | 1993-06-25 | 1994-10-18 | Advanced Micro Devices, Inc. | System for allowing a content addressable memory to operate with multiple power voltage levels |
US5381370A (en) * | 1993-08-24 | 1995-01-10 | Cypress Semiconductor Corporation | Memory with minimized redundancy access delay |
-
1994
- 1994-04-25 JP JP6086685A patent/JP2914171B2/ja not_active Expired - Fee Related
- 1994-11-09 TW TW083110378A patent/TW345661B/zh active
- 1994-11-21 US US08/344,680 patent/US5523974A/en not_active Expired - Lifetime
- 1994-12-23 CN CN94119246A patent/CN1086836C/zh not_active Expired - Fee Related
-
1995
- 1995-01-12 EP EP95100349A patent/EP0679996B1/de not_active Expired - Lifetime
- 1995-01-12 DE DE69527741T patent/DE69527741T2/de not_active Expired - Lifetime
- 1995-04-25 KR KR1019950009732A patent/KR100195606B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW345661B (en) | 1998-11-21 |
DE69527741T2 (de) | 2003-04-03 |
US5523974A (en) | 1996-06-04 |
EP0679996A3 (de) | 1998-11-11 |
CN1086836C (zh) | 2002-06-26 |
KR950030166A (ko) | 1995-11-24 |
CN1114456A (zh) | 1996-01-03 |
JPH07296595A (ja) | 1995-11-10 |
EP0679996A2 (de) | 1995-11-02 |
KR100195606B1 (ko) | 1999-06-15 |
JP2914171B2 (ja) | 1999-06-28 |
EP0679996B1 (de) | 2002-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8320 | Willingness to grant licences declared (paragraph 23) |